The invention provides a preparation and
separation method of an LED epitaxial
wafer and an LED
chip. According to the LED epitaxial
wafer, a first sacrificial layer and a buffer layer structure are arranged between a
sapphire substrate and an epitaxial laminated layer; according to the preparation and
separation method of the LED
chip, an LED epitaxial
wafer is etched through a
chip technology to form a plurality of LED chips which are arranged at intervals through
cutting channels, a part of a first sacrificial layer is exposed out of the
cutting channels, then an etchant solution is adopted to dissolve the first sacrificial layer through the exposed
cutting channels, lossless stripping of a
sapphire substrate can be achieved efficiently at low cost, and the service life of the LED chip is prolonged. The
sapphire substrate can be recycled repeatedly, the step of
grinding and
thinning can be omitted, the problems that the electric
leakage rate is increased and the yield is low due to the fact that an epitaxial lamination layer is damaged by an existing
grinding process, physical damage is generated on the side wall when LED core particles are
cut through
laser, and the output efficiency of light is affected are solved, and then the reliability and the yield of LED chips are improved.