Capacitance structure for the integrated circuit

Abstract

This invention discloses one integration circuit capacitor structure, which comprises one dielectric layer and first, second and third wires, wherein, the dielectric layer is set on one underlay; first wire is imbedded into first level of dielectric layer; the second and third wires are imbedded into second level lower than first level with certain distance; the second wire is covered by one projection on underlay and the third wire is covered by one projection on underlay.

Description

technical field [0001] The present invention relates to a capacitor structure for integrated circuits, and more particularly to a lateral capacitor structure that can improve capacitance mismatch. Background technique [0002] Many digital and analog components and circuits have been successfully used in semiconductor integrated circuits. The above components include passive components such as resistors, capacitors or inductors. A typical semiconductor integrated circuit includes a silicon substrate. More than one dielectric layer is disposed on the substrate, and more than one metal layer is disposed in the dielectric layer. These metal layers can be used to form on-chip components, such as on-chip metal-insulator-metal (MIM) capacitors, through current semiconductor process technology. [0003] A typical metal-insulator-metal (MIM) capacitor element includes two conductive plates, one of which is above the other and parallel to each other, and a layer of dielectric mate...

AI Technical Summary

Problems solved by technology

As a result, the metal lines 103 and 105 embedded in the uneven dielectric layer 102 will make the mismatch between the MIM capacitor elements more serious, reducing the performance of the integrated circuit

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