Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A light-emitting diode epitaxial wafer and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of LEDs, and achieve the effects of improving luminous efficiency, preventing electron overflow, and improving lattice mismatch

Active Publication Date: 2020-05-19
HC SEMITEK ZHEJIANG CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Embodiments of the present invention provide a light-emitting diode epitaxial wafer and a manufacturing method thereof, which can solve the problem of low luminous efficiency of LEDs caused by lattice mismatch between indium gallium nitride and gallium nitride in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode epitaxial wafer and its manufacturing method
  • A light-emitting diode epitaxial wafer and its manufacturing method
  • A light-emitting diode epitaxial wafer and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] An embodiment of the present invention provides a light emitting diode epitaxial wafer, figure 1 For a structural schematic diagram of a light-emitting diode epitaxial wafer provided in an embodiment of the present invention, see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 1, a buffer layer 2, an N-type semiconductor layer 3, an active layer 4, and a P-type semiconductor layer 5, and the buffer layer 2, the N-type semiconductor layer 3, the active layer 4, and the P-type semiconductor layer Layers 5 are sequentially stacked on the substrate 1 .

[0029] figure 2 For the schematic structural diagram of the active layer provided by the embodiment of the present invention, see figure 2 , the active...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the field of semiconductor technology. The epitaxial wafer comprises a substrate and a buffer layer sequentially laminated on the substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, wherein the active layer comprises a plurality of composite structures laminated in sequence, each of the composite structures comprises a well layer, a cap layer and a barrier layer laminated in sequence, the material of the well layer is InGaN, the material of thebarrier layer is GaN, and the material of the cap layer is BxGa1-xN, 0<x<1. A lay of BGaN is inserted between InGaN and GaN, BGaN can provide tensile stress, improve lattice mismatch between InGaN and GaN, reduce piezoelectric polarization field caused by lattice mismatch between InGaN and GaN, and improve luminescence efficiency of LED because of small size of B atom.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, mobile phone backlights and other fields. [0003] Epitaxial wafers are thin semiconductor films grown on single crystal materials with matching crystal structures. The epitaxial wafer can be processed to form a chip, and after the chip is packaged, it becomes a light-emitting diode. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/08H01L33/14H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/08H01L33/145H01L33/325
Inventor 苏晨王慧肖扬吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com