The application discloses a vertical cavity surface emitting
semiconductor laser based on a lateral epitaxial technology and a preparation method. The core of the structure is to solve the problem of presetting a lower DBR through the lateral epitaxial technology, to preset the DBR first, to open a window on the DBR, to grow the functional area of the
laser on the upper side of the DBR through the lateral epitaxial technology, to complete the preparation of the lower DBR, and then to prepare the upper DBR and the
metal electrodes on the two sides through common processes, so that the
vertical cavity surface emitting laser is formed. The direction of the electric injection is perpendicular to the direction of the
laser emission, and the influence of the current spreading layer of the
ultraviolet band VCSEL on the
light field absorption can be avoided. The application is favorable for reducing the damage to the device, improving the yield and the device performance, well utilizing the high-quality material area grown through the lateral epitaxial technology, improving the
crystal quality, improving the light emitting efficiency and the service life, and the
electric field direction is the non-polarized direction of the material, so that the
quantum confinement
Stark effect can be effectively reduced, and the reduction of the
quantum efficiency and the
wavelength drift of the device under a large
voltage can be inhibited.