The application relates to the technical field of
semiconductor photoelectric devices, and discloses a semi-polar light-emitting device and a preparation method. The semi-polar light-emitting device comprises a first substrate, the first substrate comprises a
ridge-shaped structure and a wing-shaped structure formed on the top of the
ridge-shaped structure, the wing-shaped structure has inclined side walls extending from the center line of the top of the wing-shaped structure to both sides, and the inclined side walls are semi-polar surfaces; and a device layer, the device layer is grown on the inclined side walls of the wing-shaped structure and comprises, from bottom to top, an
electron-providing layer, an active region comprising at least one
quantum well, and a hole-providing layer. According to the application, the semi-polar
gallium nitride substrate comprising the
ridge-shaped structure and the wing-shaped structure can effectively inhibit
quantum confinement
Stark effect, the semi-polar surface makes the direction of the polarization
electric field and the growth direction form a certain angle, thereby greatly weakening the harmful
electric field along the growth direction, and the
electron and hole
wave function overlap degree is significantly increased.