Full-color emitting LED epitaxial structure based on GaN hexagonal prism array and preparation method of epitaxial structure

Abstract

The invention relates to a full-color emitting LED epitaxial structure based on a GaN hexagonal prism array and a preparation method of the epitaxial structure, belongs to the technical field of semiconductors, and can solve the problem that in the prior art, the fluorescent powder conversion efficiency is low, and it is difficult to accurately control an in-situ deposition mask and the GaN micron / nano array dimension and distribution; the epitaxial structure comprises a sapphire substrate, a nucleation layer, a non-doped GaN layer, an n-type GaN layer, a patterned SiO2 mask layer, an n-type GaN hexagonal prism array at the gap of the patterned SiO2 mask layer, quantum dots located at the top surface of the hexagonal prism, quantum wires on the edges, and a multi-quantum-well layer on a top surface (0001) crystal surface and six half-polarity (10-11) crystal surfaces, and a final p type GaN layer. By virtue of the structure, the GaN micron / nano array dimension and distribution can be accurately controlled, the problems that a stark effect is limited by the quantum well, the efficiency is lowered suddenly, the light-emitting wavelength is single and the like in the two-dimensional GaN-based thin film LED can be solved, and full-color emission is realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a full-color emitting LED epitaxial structure and a preparation method based on a GaN hexagonal truss array. Background technique [0002] As a new generation of lighting equipment, LED has many advantages such as high brightness, low cost, long life, small size, energy saving and environmental protection. At present, white light LEDs are mainly realized in the following three ways: the first is to obtain white light by exciting phosphors with ultraviolet LEDs. This method is similar to the principle of fluorescent lamps. Ultraviolet LEDs can generate longer wavelengths through organic or inorganic phosphors. Visible light ranging from blue to red light can be obtained, thus enabling white light emission. The second is achieved by exciting phosphors with blue light. Part of the blue light is transmitted through the phosphor, and the other part is absorbed by ...

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Problems solved by technology

[0003] The present invention aims at the problems of phosphor powder conversion efficiency and in-situ deposition mask that are difficult to accurately control the size and distribution of GaN micro / nano arrays in the prior art, and provides a full-color emitting LED epitaxial structure and preparation method based on GaN hexagonal frustum arrays

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