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SOUP structured electrooptic modulator based on stark effect and manufacturing method

An optoelectronic modulator and Stark effect technology, applied in the field of electronics, can solve the problems affecting crystal epitaxial growth, complex high-voltage process conditions, affecting the optoelectronic performance of devices, etc. The effect of lattice mismatch

Active Publication Date: 2016-07-13
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of this photodetector is that the strained quantum well produces crystal defects—mismatch dislocations due to lattice mismatch between materials. These defects require complex high-voltage process conditions for the preparation process and affect the crystal The epitaxial growth will eventually affect the overall optoelectronic performance of the device

Method used

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  • SOUP structured electrooptic modulator based on stark effect and manufacturing method
  • SOUP structured electrooptic modulator based on stark effect and manufacturing method
  • SOUP structured electrooptic modulator based on stark effect and manufacturing method

Examples

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Effect test

Embodiment 1

[0053] Embodiment 1: with Ge 2 h 6 As a precursor gas to prepare SOUP structure optoelectronic modulator based on Stark effect.

[0054] Step 1: Oxygen injection isolation.

[0055] Using the oxygen injection isolation method, the dose was 1.8×10 18 cm-2, oxygen ions with an energy of 200KeV are implanted into silicon to form a buried oxide layer SiO in silicon 2 , to get SiO located in the buried oxide layer 2 The structure of the waveguide above the silicon and the buried oxide layer SiO 2 The structure of the underlying silicon substrate, such as image 3 (a) shown.

[0056] Step 2: Etching the silicon waveguide.

[0057] Using the etching process, after etching the left and right ends of the silicon waveguide to remove one percent of the length of the silicon waveguide, thin the right side of the silicon waveguide to 7%-8% of the thickness before etching the silicon waveguide, and then use acetone and Plasma cleaning for 15 minutes, removing the photoresist, and ob...

Embodiment 2

[0068] Embodiment 2: with Si 2 h 6 As a precursor gas to prepare SOUP structure optoelectronic modulator based on Stark effect.

[0069] Step 1: Oxygen injection isolation.

[0070] Using the oxygen injection isolation method, the dose was 1.8×10 18 cm-2, oxygen ions with an energy of 200KeV are implanted into silicon to form a buried oxide layer SiO in silicon 2 , to get SiO located in the buried oxide layer 2 The structure of the waveguide above the silicon and the buried oxide layer SiO 2 The structure of the underlying silicon substrate, such as image 3 (a) shown.

[0071] Step 2: Etching the silicon waveguide.

[0072] Using the etching process, after etching the left and right ends of the silicon waveguide to remove one percent of the length of the silicon waveguide, thin the right side of the silicon waveguide to 7%-8% of the thickness before etching the silicon waveguide, and then use acetone and Plasma cleaning for 15 minutes, removing the photoresist, and ob...

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Abstract

The invention discloses an SOUP structured electrooptic modulator based on a stark effect and a manufacturing method, and mainly aims to solve the problems that infrared light of a conventional electrooptic modulator is easy to leak, lattice mismatch exists and manufacturing methods are complex. The SOUP structured electrooptic modulator comprises a substrate (1), a silicon SOUP structure waveguide (2) on an oxidized lower envelope base, an absorbing area (3), a left electrode (4) and a right electrode (5). The manufacturing method comprises the following steps: performing implanted oxygen separation, performing etching silicon waveguide, etching an SOUP structure, etching a quantum well, performing low-pressure chemical vapor deposition and depositing electrodes. Due to the silicon SOUP structure on the oxidized lower envelope base and the quantum well and a barrier layer adaptive to lattices, light loss can be reduced, and the wavelength range of an absorption spectrum is widened; meanwhile, a film can be deposited by using a low-pressure chemical vapor deposition method, so that a manufacture process is simple, and the mid-infrared electrooptic modulator can be manufactured.

Description

technical field [0001] The invention belongs to the field of electronic technology, and further relates to a silicon on oxide undercladding pedestal (SilicononOxideUndercladdingPedestal: SOUP) structure photoelectric modulator based on the Stark effect in the field of microelectronic device technology and a manufacturing method. The invention can be used to control the intensity of light in the process of light emission, transmission and reception of optical communication. Background technique [0002] The optoelectronic modulator is a key device for high-speed, short-distance optical communication and one of the most important integrated optical devices. Optical modulators can be divided into electro-optic, thermo-optic, acousto-optic, all-optical, etc. according to their modulation principles. Keldysh effect, Stark effect, carrier dispersion effect, etc. In the light emission, transmission, and reception processes of the overall optical communication, the light modulator...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/03B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00G02F1/0338
Inventor 张春福韩根全彭芮之郝跃张进城冯倩
Owner XIDIAN UNIV
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