Ultraviolet LED epitaxial structure and growth method thereof

Abstract

The present application discloses an ultraviolet LED epitaxial structure. The structure comprises a substrate; a buffer layer on a first side of the substrate; an undoped GaN layer on a side, far awayfrom the substrate, of the buffer layer; an N-type GaN layer at one side, far away from the buffer layer, of the undoped GaN layer; a multi-quantum well structure layer at one side, far away from theundoped GaN layer, of the N-type GaN layer; an electron blocking layer with a changed Al composition located at one side, far away from the N-type GaN layer, of the multi-quantum well structure layer; and a P-type GaN layer located at one side, far away from the multi-quantum well structure layer, of the electron blocking layer with the changed Al composition. The barrier layer is the electron blocking layer with the changed Al composition to inhibit the quantum confinement Stark effect caused by the polarization electric field and reduce the electrons tunneling from the multiple quantum wellstructure layer to the P-type GaN layer so as to improve the internal quantum efficiency. The present invention further provides a growth method of an ultraviolet LED epitaxial structure having the advantages mentioned above.

Description

technical field [0001] The present application relates to the field of LED technology, in particular to an ultraviolet LED epitaxial structure and a growth method thereof. Background technique [0002] Ultraviolet LED (Light Emitting Diode, light-emitting diode) has the advantages of low cost, long life, and environmental protection. It has a wide range of applications, such as air and water purification and disinfection, ultraviolet medical treatment, high-density optical storage systems, full-color displays, And solid-state white lighting and so on. [0003] However, there are still some problems to be solved in ultraviolet LEDs, such as the low internal quantum efficiency of AlGaN-based ultraviolet LEDs. At present, the electron blocking layer is mainly introduced to reduce the leakage of electrons in the active region of the multiple quantum wells, thereby improving the internal quantum efficiency. In the ultraviolet LED, in order to achieve the ideal electron blocking ...

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Problems solved by technology

[0003] However, there are still some problems to be solved in UV LEDs, such as the low internal quantum efficiency of AlGaN-based UV LEDs

At present, the electron blocking layer is mainly introduced to reduce the leakage of electrons in the active region of the multiple quantum wells, thereby improving the internal quantum efficiency. In the ultraviolet LED, in order to achieve the ideal electron blocking effect, the Al group in the AlGaN material in the electron blocking layer Higher requirements for high doping Al barrier layer growth is very difficult

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