2 results about "Transition line" patented technology

The invention discloses an interlayer staggered stacking path planning method for additive manufacturing. Obtaining a filling area contour of a model plane slice polygon, calculating a feature vector, and determining a grid arrangement direction, a starting point and a starting filling line segment; searching an adjacent line segment set connected with the end point of the previous line segment on the lower layer or the upper layer, marking all the adjacent line segments, selecting a transition line segment adjacent to the line segment, and if the other layer of branch line segments connected with the transition line segment are not marked, taking the transition line segment as the next line segment, and taking the transition line segment as the next line segment; and connecting the end points of the line segments end to end to form a continuous line segment as a filling path line formed by final planning until the other layer of branch line segments connected with all the adjacent transition line segments are marked. According to the method, in the additive manufacturing process, the number of short paths and idle strokes can be reduced, the frequency of frequent starting and stopping is reduced, and the working efficiency is improved. And meanwhile, the excessive accumulation condition of materials at the intersection point and the molding instability at the start-stop point are reduced.

This application discloses a fast virtual gate extraction method and related apparatus based on silicon spin qubits. The method includes locating transition line regions in a charge stability map, which reflects the dependence between the stability of charge states and gate voltage in a silicon quantum dot device. The transition line regions represent the gate voltage regions when charge states undergo a transition. A region search is performed within these transition line regions to determine transition lines, which are composed of multiple transition points. A virtualization matrix is ​​reconstructed based on these transition points to achieve precise adjustment of the quantum dots in the silicon quantum dot device. The virtualization matrix is ​​a unitary matrix corresponding to a virtual gate. A virtual gate is a gate operation that generates a control voltage based on a unitary matrix to achieve precise orthogonal control of a single quantum dot. Using this application, the efficiency of virtual gate extraction can be improved, thereby enhancing the computational efficiency and accuracy of silicon quantum computers.