56results about How to "Reduce energy difference" patented technology

Disclosed is an electro-absorption type semiconductor optical modulator utilizing the Quantum Confinement Stark Effect, in which a quantum well structure introduced in its optical absorption layer is arranged to have a potential structure such that one of the electron affinity and the energy of the top of the valence band increases in the laminating direction, while the other decreases, thereby canceling the built-in field. It is intended to lower the drive voltage and to enhance an on/off ratio (extinction ratio). Thus, the absorption peak becomes narrow at a no bias state to attain a low drive voltage and an enhanced extinction ratio.

The invention relates to a p-type gallium oxide doped film, and discloses a device and a method for preparing the p-type gallium oxide doped film. A zinc dopant is adopted as an acceptor of the p-type gallium oxide doped film, and equivalent elements of oxygen are doped to regulate a valence band top structure of gallium oxide. The method comprises the steps that a zinc doped gallium oxide target is adopted as a sputtering target material; equivalent element elementary substances are accommodated in an evaporation source; a sputtering gas conveys steam of the equivalent elements to a radio frequency glow discharge zone; a primary product of an acceptor-equivalent element gallium oxide co-doped film is deposited on a substrate through radio frequency magnetron sputtering; and the primary product is subjected to thermal treatment and activation, and the p-type gallium oxide doped film is obtained. According to the method, the problem that the energy level of the acceptor is relatively far away from the valence band top is effectively solved, the self-compensation effect of oxygen vacancy is inhibited, and hole mobility is increased.

A thermally activated delayed fluorescent (TADF) material is provided. The TADF material has a form in which an electron donating group and an electron withdrawing group are connected to benzene and the electron withdrawing group is position in an ortho position to the electron donating group.

The invention relates to quantum dot light emitting diodes and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises an anode, a red/green/blue quantum dot light emitting layer and a cathode which are arranged in an overlapping manner from down to up. The quantum dot light emitting diode further comprises a charge generation layer, and the charge generation layer is arranged between the anode and the red/green/blue quantum dot light emitting layer in an overlapping manner. The preparation method of the quantum dot light emitting diode comprises the following steps of: providing an anode substrate; successively depositing the charge generation layer and the red/green/blue quantum dot light emitting layer on the anode substrate; and depositing the cathode on the red/green/blue quantum dot light emitting layer.

A main object of the present invention is to provide a photoelectric conversion device which is capable of improving the photoelectric conversion efficiency. The invention comprises: a p-layer; an n-layer; an i-layer disposed between the p-layer and the n-layer; a first electrode connected to the p-layer; and a second electrode connected to the n-layer, wherein the i-layer comprises a wall layer constituted by a first semiconductor, and a quantum structure portion constituted by a second semiconductor disposed in the wall layer; a band gap of the first semiconductor is wider than that of the second semiconductor; when a concentration of the n-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cn1, a concentration of the n-type impurity that may be contained in the region on the p-layer side of the i-layer is defined as Cn2, a concentration of the p-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cp1, and a concentration of the p-type impurity that may be contained in the region on the n-layer side of the i-layer is defined as Cp2, the relations Cn1<Cn2 and/or Cp1<Cp2 are satisfied.

A method of operation of a device includes receiving a first set of samples and a second set of samples. The first set of samples corresponds to a portion of a first audio frame and the second set of samples corresponds to a second audio frame. The method further includes generating a target set of samples based on the first set of samples and a first subset of the second set of samples and generating a reference set of samples based at least partially on a second subset of the second set of samples. The method also includes scaling the target set of samples to generate a scaled target set of samples and generating a third set of samples based on the scaled target set of samples and one or more samples of the second set of samples.

The invention discloses an application of a phenylene bis-vinylidene bis-benzimidazole compound. The chemical name of the phenylene bis-vinylidene bis-benzimidazole compound is (E, E)-2, 2'-[(2, 5-dimethoxy-1, 4-phenylene) bis-2, 1-vinylidene] bis-1H-benzimidazole; and the structure of the compound is shown in the formula (I). The phenylene bis-vinylidene bis-benzimidazole compound is applied as an upconversion fluorescence and two-photon absorption material, and has excellent upconversion fluorescence emitting capacity and two-photon absorption capacity.

The invention discloses a thermally-activated delayed fluorescence emission material and application thereof. Receptor units constructed through molecular design are multi-element aromatic fused heterocycles with high luminous efficiency; and a plurality of N heteroatoms, or N and O heteroatoms, or N and S heteroatoms introduced into a condensed ring system can adjust electron-deficient weak interactions of the receptor units and singlet-triplet state energy level difference in a molecular system, are beneficial for reverse inter-system jumping and conversion, and can regulate and control intermolecular C-H...Pi effect, hydrogen bond effect and local dipole-dipole interaction so as to allow material molecules to generate a stacking structure beneficial for aggregation-state efficient lightemitting, thereby achieving aggregation-state efficient light emitting.

The invention provides a tin telluride-based thermoelectric material and a preparation method thereof, the tin telluride-based thermoelectric material comprises the following components: tellurium, tin and aluminum, and the molar ratio of tellurium to tin to aluminum is (1-2): (1.9-2.1): (0.01-0.06). The preparation method of the tin telluride-based thermoelectric material comprises the followingsteps: respectively weighing tellurium, tin and aluminum, uniformly mixing to obtain a mixed raw material, adding the mixed raw material into a ball milling tank, vacuumizing, introducing mixed gas, and carrying out ball milling at the rotating speed of 400-480rpm for 15-20h to obtain mixed powder; and carrying out plasma sintering on the mixed powder to obtain the tin telluride-based thermoelectric material. The aluminum element is doped in the tin telluride, so that the vacancy defect of the material is overcome to a certain extent, the lattice thermal conductivity is reduced, the electricalconductivity of the material is improved, the problems of poor electrical conductivity, potential safety hazards, environmental pollution and the like are effectively solved, and the tin telluride material is convenient to popularize and use.

Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.

The invention relates to a method for increasing the interface magnetic anisotropy energy of a ferromagnetic metal/oxide bilayer film, belonging to the technical field of high-density information storage and sensing. Chromium Cr/FeNx/MgO/Ta multilayer films were deposited on Si substrates after surface acidification. After deposition, heat treatment is carried out to promote the uniform occupationof N atoms at interstitial sites. N atom can change the coordination environment of Fe, the charge redistribution at Fe/MgO interface is caused, the energy band structure of Fe is effectively regulated, the electron occupation on a dz2 orbit is greatly increased, and the hybrid state of Fe3dz2-O2pz orbit can be regulated, so that the magnetic anisotropy energy of the interface of the thin film isremarkably increased. In the invention, only nitrogen is needed to be introduced into the process of preparing the Fe thin film, and the orbital hybridization intensity of FeO can be directly regulated and the magnetic anisotropy energy of the interface is increased. There is no need of high cost rare metal or expensive additional device, which has the characteristics of simple preparation and convenient control. With the advantages of high efficiency and low cost, the method for increasing the interface magnetic anisotropy energy of a ferromagnetic metal/oxide bilayer film is suitable for the future spintronics technology.

The present invention relates to high-performance PbTe-SnTe alloy-based thermoelectric materials and a preparation method thereof. The chemical formula of thermoelectric materials is Na0.02SnxPb0.98-xTe, wherein x is equal to 0-0.04. When preparation is concretely performed, simple substance materials Na, Sn, Pb and Te are weighted according to a stoichiometric ratio, and are subjected to vacuum packaging, primary fusion quenching, secondary heat-treatment quenching and hot pressed sintering to obtain a target product. Compared to the prior art, the thermoelectric materials with low thermal conductance and high performances are prepared in the invention, a method for preparing thermoelectric materials with high density, high mechanical strength and a high thermoelectric property is explored, and the thermoelectric materials can reach a thermoelectricity peak value zT~1.8 at the temperature of 800K, and are first-class thermoelectric materials having large potential.

The invention discloses a high-light-transmittance heat-adjustable microwave absorption optical window based on a thermally induced phase change material, and belongs to the field of optical transparent electromagnetic shielding and microwave absorption. The high-transmittance microwave absorption light window is composed of a patterned thermally induced phase change material layer, a transparent medium layer and a transparent microwave shielding layer, wherein the patterned thermally induced phase change material layer and the transparent microwave shielding layer are respectively arranged on two sides of the transparent medium layer in parallel. On the premise of high optical transparency, continuous change of the absorptivity of the optical window can be achieved by controlling the temperature, and the peak absorptivity of the optical window at the peak temperature can be nearly 100%. In addition, the peak temperature of the microwave absorption optical window can be adjusted by controlling the sheet resistance of the thermally induced phase change material and the duty ratio of the patterned thermally induced phase change material layer. The application of the phase change material in the GHz field is expanded, and the phase change material has the advantages of being flexible in design, adjustable in heat, wide in application range and the like.

The present invention increases the options for organic device materials such as organic EL element materials by introducing a specific tertiary alkyl group into novel polycyclic aromatic compounds inwhich a plurality of aromatic rings are linked by boron atoms and oxygen atoms or the like. The present invention also provides an organic EL element that has, for example, excellent luminous efficiency by using a novel cycloalkyl-substituted polycyclic aromatic compound as an organic EL element material.

The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated derivative with a monomer I, or mixing a pyrrolopyrrole organic tin compound and a monomer I' to obtaina pyrrolopyrrole organic semiconductor material; enabling the pyrrolopyrrole organic semiconductor material to react with an oxidant to obtain the pyrrolopyrrole organic semiconductor material containing the free radicals. The preparation method disclosed by the invention is simple in synthesis routine and easy in synthesis. The pyrrolopyrrole organic semiconductor material containing the free radicals prepared by the invention has the advantages that the electron mobility is high, the molecular stability is good, the absorption intensity is high, the absorption waveband is narrow, the absorption wavelength reaches a near-infrared waveband, and the pyrrolopyrrole organic semiconductor material containing the free radicals can be used as a free-radical material of devices such as near-infrared and narrowband photoelectric detectors and organic field effect transistors.

The invention provides a WOLED device, a manufacturing method thereof and a WOLED display device. The WOLED device comprises a cathode and an anode which are arranged oppositely; a red fluorescent light-emitting layer arranged at the side, close to the cathode, of the anode; a green fluorescent light-emitting layer arranged on the surface, close to the cathode, of the red fluorescent light-emitting layer; a spacer layer arranged on the surface, close to the cathode, of the green fluorescent light-emitting layer and comprising a first main body material and a first thermal delay fluorescent material; and blue fluorescent light-emitting layer arranged on the surface, close to the cathode, of the spacer layer. The first main body material and the first thermal delay fluorescent material in the spacer layer of the WOLED device have relatively high triplet state and singlet state, in the TADF material, the energy difference between S1 and T1 energy states is very small, excitons in the T1 state can jump to S1 in an intersystem manner, and then transition from the S1 state to a ground state is carried out to carry out composite luminescence. The TADF plays a role in exciton collection, so that T1 excitons which originally cannot emit light in a transition manner are converted into S1 excitons, and 100% of S1 excitons are formed; the WOLED device is in a full-fluorescence light emitting mode and has a longer service life.

The present invention relates to a boronic acid or a boronic acid ester or a method for producing a polycyclic aromatic compound or an oligomer of polycyclic aromatic compound by using the same. A boronic acid compound that is effective to manufacture the polycyclic aromatic compound and a method for manufacturing the polycyclic aromatic compound by using the boronic acid compound are provided. The boronic acid compound is manufactured by acting the acid on the compound represented by a following formula (1). In the formula, the A, B and C rings are independently aromatic rings or heteroaromatic rings, Y1 is any esterified -B(OH)2, X1 and X2 are -O-, >N-Ar(Ar is aryl group and the like), -S- or -Se-.