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56results about How to "Reduce energy difference" patented technology
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Polycyclic aromatic compound
ActiveCN105431439AReduced exchange interactionsHigh affinityTransistorGroup 5/15 element organic compoundsPolycyclic compoundBoron atom
The present invention addresses the problem of providing a novel polycyclic aromatic compound and an organic electroluminescent element using the same. The above problem is solved by providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are connected by boron atoms, oxygen atoms, or the like, thereby increasing the number of options for organic EL element materials, and also solved by providing a superior organic EL element using said novel polycyclic aromatic compound as an organic EL element material.
Owner:KWANSEI GAKUIN EDUCTIONAL FOUND +1
Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
ActiveUS7123638B2Increasing valence band edgeReduce voltage dropOptical wave guidanceLaser active region structureValence bandDopant
Owner:AVAGO TECH INT SALES PTE LTD
Electro-absorption type semiconductor optical modulator having a quantum well structure
InactiveUS6100543AReduce energy differenceReduce the driving voltageNanoopticsNon-linear opticsValence bandQuantum well
Disclosed is an electro-absorption type semiconductor optical modulator utilizing the Quantum Confinement Stark Effect, in which a quantum well structure introduced in its optical absorption layer is arranged to have a potential structure such that one of the electron affinity and the energy of the top of the valence band increases in the laminating direction, while the other decreases, thereby canceling the built-in field. It is intended to lower the drive voltage and to enhance an on / off ratio (extinction ratio). Thus, the absorption peak becomes narrow at a no bias state to attain a low drive voltage and an enhanced extinction ratio.
Owner:RENESAS ELECTRONICS CORP
Method for producing ultra-small water soluble near-infrared Ag2S quantum dots
ActiveCN102826585ASmall sizeGood water solubilityNanotechnologyLuminescent compositionsSolubilityFluorescence spectra
The invention relates to a method for producing ultra-small water soluble near-infrared Ag2S quantum dots, which adopts the one-pot method for production. The method for producing ultra-small water soluble near-infrared Ag2S quantum dots comprises the following steps of: 1) uniformly mixing a protein water solution with an AgNO3 water solution and carrying out reaction for 5 minutes at the normal temperature under the condition of magnetic stirring; 2) adjusting the pH value of the liquid with a NaOH water solution to 12.0; and 3) adding a chalcogenide water solution with the concentration of 10-100 millimole / l into the liquid and adjusting the mole ratio of the Ag element and the S element to (6-1):1, and reacting for 12 hours under the conditions of stirring and 37 DEG C to produce the ultra-small water soluble near-infrared Ag2S quantum dots of smaller than 2 nanometers. The method has the advantages that the quantum dots produced by the method have the excellent properties of no-toxic heavy metal elements, small size, good water solubility, high luminous efficiency, adjustability in fluorescence spectra within near-inferred areas and the like; and the production method is safe, easy and convenient to operate, has small toxicity and low cost, and is easy to popularize and use in a large scale.
Owner:NANKAI UNIV
Polycyclicaromatic compound, polymer, production method thereof, application thereof
ActiveCN106905367AReduced exchange interactionsHigh affinityTransistorGroup 5/15 element organic compoundsChemical compoundDisplay device
The invention provides a novel polycyclicaromatic compound, a polymer, a production method thereof, an application thereof, materials used for an organic element, an organic electroluminescent element, a display device, and an illuminating device. The above problem is solved by providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are connected by boron atoms, oxygen atoms, or the like, thereby increasing the number of options for organic EL element materials, and also solved by providing a superior organic EL element using said novel polycyclic aromatic compound as an organic EL element material.
Owner:KWANSEI GAKUIN EDUCTIONAL FOUND +1
P-type gallium oxide doped film and preparation method thereof
InactiveCN107119258AIncrease net concentrationImprove mobilityVacuum evaporation coatingSputtering coatingRadio frequencyP type doping
The invention relates to a p-type gallium oxide doped film, and discloses a device and a method for preparing the p-type gallium oxide doped film. A zinc dopant is adopted as an acceptor of the p-type gallium oxide doped film, and equivalent elements of oxygen are doped to regulate a valence band top structure of gallium oxide. The method comprises the steps that a zinc doped gallium oxide target is adopted as a sputtering target material; equivalent element elementary substances are accommodated in an evaporation source; a sputtering gas conveys steam of the equivalent elements to a radio frequency glow discharge zone; a primary product of an acceptor-equivalent element gallium oxide co-doped film is deposited on a substrate through radio frequency magnetron sputtering; and the primary product is subjected to thermal treatment and activation, and the p-type gallium oxide doped film is obtained. According to the method, the problem that the energy level of the acceptor is relatively far away from the valence band top is effectively solved, the self-compensation effect of oxygen vacancy is inhibited, and hole mobility is increased.
Owner:LUDONG UNIVERSITY
Ortho-substituted thermally activated delayed fluorescence material and organic light-emitting device comprising same
PendingUS20180123049A1Delay fluorescenceReduce energy differenceGroup 4/14 element organic compoundsGroup 5/15 element organic compoundsFluorescenceBenzene
A thermally activated delayed fluorescent (TADF) material is provided. The TADF material has a form in which an electron donating group and an electron withdrawing group are connected to benzene and the electron withdrawing group is position in an ortho position to the electron donating group.
Owner:SAMSUNG DISPLAY CO LTD
Quantum dot light emitting diode and preparation method thereof
ActiveCN105140361AImprove current efficiencyExtended service lifePoint-like light sourceSemiconductor devicesQuantum dotCharge generation
The invention relates to quantum dot light emitting diodes and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises an anode, a red / green / blue quantum dot light emitting layer and a cathode which are arranged in an overlapping manner from down to up. The quantum dot light emitting diode further comprises a charge generation layer, and the charge generation layer is arranged between the anode and the red / green / blue quantum dot light emitting layer in an overlapping manner. The preparation method of the quantum dot light emitting diode comprises the following steps of: providing an anode substrate; successively depositing the charge generation layer and the red / green / blue quantum dot light emitting layer on the anode substrate; and depositing the cathode on the red / green / blue quantum dot light emitting layer.
Owner:TCL CORPORATION
Photoelectric conversion device
InactiveUS20120111398A1Easy transferImprove photoelectric conversion efficiencyNanotechPhotovoltaic energy generationPhotoelectric conversionSemiconductor
A main object of the present invention is to provide a photoelectric conversion device which is capable of improving the photoelectric conversion efficiency. The invention comprises: a p-layer; an n-layer; an i-layer disposed between the p-layer and the n-layer; a first electrode connected to the p-layer; and a second electrode connected to the n-layer, wherein the i-layer comprises a wall layer constituted by a first semiconductor, and a quantum structure portion constituted by a second semiconductor disposed in the wall layer; a band gap of the first semiconductor is wider than that of the second semiconductor; when a concentration of the n-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cn1, a concentration of the n-type impurity that may be contained in the region on the p-layer side of the i-layer is defined as Cn2, a concentration of the p-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cp1, and a concentration of the p-type impurity that may be contained in the region on the n-layer side of the i-layer is defined as Cp2, the relations Cn1<Cn2 and / or Cp1<Cp2 are satisfied.
Owner:TOYOTA JIDOSHA KK
Method for fast preparing soluble near infrared CdTe quantum dots covered with mercaptan in aqueous phase
InactiveCN102086397ASimple and safe operationLow toxicityLuminescent compositionsSolubilityQuantum yield
A method for fast preparing soluble near infrared CdTe quantum dots covered with mercaptan in aqueous phase relates to the preparation field of quantum dot. The method comprises the following steps: (a) adding NaBH4 or KBH4 and Te powder, adding deionized water to react at the room temperature under magnetic stirring and prepare NaHTe or KHTe solution; (b) preparing cadmium salt or cadmium oxide, cadmium hydroxide and cadmium sulfhydryl compound solution; (c) adding the solution obtained in the step (b) in a three-necked bottle, protecting with argon, stirring; (d) adding fresh and oxygen-free NaHTe or KHTe solution prepared in the step (a) in the three-necked bottle of the step (c); and (e) heating and refluxing to react and obtain the near infrared CdTe quantum dots. The method of the invention has simple operations, mild conditions and low cost and toxicity. The synthetized mercaptan modified CdTe quantum dots have good water-solubility and stability; and the fluorescence quantum yield is high and the emission spectrum can be adjusted in the near infrared region.
Owner:NANKAI UNIV
Scaling for gain shape circuitry
ActiveUS20160210978A1Reduce energy differenceReduce and eliminate artifactSpeech analysisPattern recognition
Owner:QUALCOMM INC
Application of phenylene bis-vinylidene bis-benzimidazole compound
ActiveCN103074052ALow densityReduce energy differenceOrganic chemistryLuminescent compositionsTwo-photon absorptionFluorescence
The invention discloses an application of a phenylene bis-vinylidene bis-benzimidazole compound. The chemical name of the phenylene bis-vinylidene bis-benzimidazole compound is (E, E)-2, 2'-[(2, 5-dimethoxy-1, 4-phenylene) bis-2, 1-vinylidene] bis-1H-benzimidazole; and the structure of the compound is shown in the formula (I). The phenylene bis-vinylidene bis-benzimidazole compound is applied as an upconversion fluorescence and two-photon absorption material, and has excellent upconversion fluorescence emitting capacity and two-photon absorption capacity.
Owner:ZHEJIANG UNIV OF TECH
Thermally-activated delayed fluorescence emission material and application thereof
ActiveCN111171038ALower exciton densitySuppression of efficiency roll-offOrganic chemistrySolid-state devicesFluorescenceDipole
The invention discloses a thermally-activated delayed fluorescence emission material and application thereof. Receptor units constructed through molecular design are multi-element aromatic fused heterocycles with high luminous efficiency; and a plurality of N heteroatoms, or N and O heteroatoms, or N and S heteroatoms introduced into a condensed ring system can adjust electron-deficient weak interactions of the receptor units and singlet-triplet state energy level difference in a molecular system, are beneficial for reverse inter-system jumping and conversion, and can regulate and control intermolecular C-H...Pi effect, hydrogen bond effect and local dipole-dipole interaction so as to allow material molecules to generate a stacking structure beneficial for aggregation-state efficient lightemitting, thereby achieving aggregation-state efficient light emitting.
Owner:XI AN JIAOTONG UNIV
Semiconductor laser device and semiconductor optical modulator
ActiveUS7329894B2Improve transport characteristicReduce energy differenceThyristorNanoopticsValence bandCharge carrier
Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics.According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
Owner:LUMENTUM JAPAN INC
Tin telluride-based thermoelectric material and preparation method thereof
InactiveCN111517292AOvercoming vacancy defectsLower lattice thermal conductivityGrain treatmentsMetal selenides/telluridesLattice thermal conductivityAluminum element
The invention provides a tin telluride-based thermoelectric material and a preparation method thereof, the tin telluride-based thermoelectric material comprises the following components: tellurium, tin and aluminum, and the molar ratio of tellurium to tin to aluminum is (1-2): (1.9-2.1): (0.01-0.06). The preparation method of the tin telluride-based thermoelectric material comprises the followingsteps: respectively weighing tellurium, tin and aluminum, uniformly mixing to obtain a mixed raw material, adding the mixed raw material into a ball milling tank, vacuumizing, introducing mixed gas, and carrying out ball milling at the rotating speed of 400-480rpm for 15-20h to obtain mixed powder; and carrying out plasma sintering on the mixed powder to obtain the tin telluride-based thermoelectric material. The aluminum element is doped in the tin telluride, so that the vacancy defect of the material is overcome to a certain extent, the lattice thermal conductivity is reduced, the electricalconductivity of the material is improved, the problems of poor electrical conductivity, potential safety hazards, environmental pollution and the like are effectively solved, and the tin telluride material is convenient to popularize and use.
Owner:XIHUA UNIV
Semiconductor optical device
ActiveUS20060237710A1Reduce thicknessReduce probabilityThyristorNanoopticsValence bandDevice material
Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
Owner:LUMENTUM JAPAN INC
Polycyclic aromatic amino compound
ActiveUS20200020859A1Excellent organic EL elementHigh energySolid-state devicesSemiconductor/solid-state device manufacturingOrganic electroluminescenceOrganic chemistry
By providing a novel polycyclic aromatic amino compound having an amino substituent and having a plurality of aromatic rings linked via a boron atom, an oxygen atom, or the like, for example, as in the following formula, a selection range of a material for an organic EL element is widened. In addition, by using the novel polycyclic aromatic amino compound as a material for an organic electroluminescent element, an excellent organic EL element is provided
Owner:SK MATERIALS JNC CO LTD +1
Vehicle drive control
ActiveCN105473399AShorten adjustment speedAvoid oscillationHybrid vehiclesSpeed controllerDriver/operatorExternal combustion engine
The invention relates to a method for controlling a drive (40) of a vehicle with at least one first axle which is occupied by at least one wheel. A drive torque (16) is specified by a driver of the vehicle, and the first axle is driven by means of a first electric machine (12) dependent on the drive torque (16). A second electric machine (26) which is coupled to at least one internal combustion engine (30) provides electric energy for the purpose of driving the first axle by means of the first electric machine (12). A respective control or target torque (28) assigned to the second electric machine (26) and the internal combustion engine (30) is calculated while taking into consideration the drive torque (16) and machine parameters of at least the second electric machine (26), and the second electric machine (26) and the internal combustion engine (30) are each regulated with respect to the assigned control torque or with respect to the assigned target torque (28).
Owner:AUDI AG
Printheads having improved heater chip construction
An improved heater chip for an ink jet print head, the chip including an active heater array and an inactive heater array located adjacent to and extending away from the end of the active heater array. The inactive heater array provides a region adjacent the end of the active heater array that is substantially planar, and also provides a plurality of current paths which reduces energy differences between heater resistors adjacent the end of the active heater array and other heater resistors in the heater array.
Owner:FUNAI ELECTRIC CO LTD
Signal reception apparatus and method for multi-band ultra-wideband communication systems
InactiveUS7369829B2Improve system performanceReduce energy differenceFrequency-division multiplexCode division multiplexMulti bandFrequency generation
A signal reception apparatus and method for communication systems. The signal reception apparatus for communication systems according to the present invention is applicable to communication environments in which a plurality of sub-bands having different frequency bands are sequentially used for communications. An embodiment of the invention has a multi-band index generation unit, a multi-band frequency generation unit, a multiplication unit, a correlation signal reception unit, and a buffer unit. The multi-band index generation unit generates a multi-band index corresponding to a sub-band to which a received signal is transmitted in correspondence with the multi-band index. The multiplication unit outputs a signal obtained by multiplying the received signal by the multi-band frequency. The correlation signal reception unit integrates and outputs the signal of the multiplication unit based on an integral time set in correspondence with the multi-band index. Further, the buffer unit buffers the signal of the correlation signal reception unit to be outputted at a predetermined data rate.
Owner:SAMSUNG ELECTRONICS CO LTD
Method for increasing the interface magnetic anisotropy energy of ferromagnetic metal/oxide bilayer film
ActiveCN108831741AIncrease dependenceEasy to makeChemical vapor deposition applicationHeat treatment applicationElectronic band structureElectron
The invention relates to a method for increasing the interface magnetic anisotropy energy of a ferromagnetic metal / oxide bilayer film, belonging to the technical field of high-density information storage and sensing. Chromium Cr / FeNx / MgO / Ta multilayer films were deposited on Si substrates after surface acidification. After deposition, heat treatment is carried out to promote the uniform occupationof N atoms at interstitial sites. N atom can change the coordination environment of Fe, the charge redistribution at Fe / MgO interface is caused, the energy band structure of Fe is effectively regulated, the electron occupation on a dz2 orbit is greatly increased, and the hybrid state of Fe3dz2-O2pz orbit can be regulated, so that the magnetic anisotropy energy of the interface of the thin film isremarkably increased. In the invention, only nitrogen is needed to be introduced into the process of preparing the Fe thin film, and the orbital hybridization intensity of FeO can be directly regulated and the magnetic anisotropy energy of the interface is increased. There is no need of high cost rare metal or expensive additional device, which has the characteristics of simple preparation and convenient control. With the advantages of high efficiency and low cost, the method for increasing the interface magnetic anisotropy energy of a ferromagnetic metal / oxide bilayer film is suitable for the future spintronics technology.
Owner:UNIV OF SCI & TECH BEIJING
High-performance PbTe-SnTe alloy-based thermoelectric materials and preparation method thereof
ActiveCN108520915AHigh densityHigh mechanical strengthThermoelectric device manufacture/treatmentThermoelectric device junction materialsThermoelectric materialsAlloy
The present invention relates to high-performance PbTe-SnTe alloy-based thermoelectric materials and a preparation method thereof. The chemical formula of thermoelectric materials is Na0.02SnxPb0.98-xTe, wherein x is equal to 0-0.04. When preparation is concretely performed, simple substance materials Na, Sn, Pb and Te are weighted according to a stoichiometric ratio, and are subjected to vacuum packaging, primary fusion quenching, secondary heat-treatment quenching and hot pressed sintering to obtain a target product. Compared to the prior art, the thermoelectric materials with low thermal conductance and high performances are prepared in the invention, a method for preparing thermoelectric materials with high density, high mechanical strength and a high thermoelectric property is explored, and the thermoelectric materials can reach a thermoelectricity peak value zT~1.8 at the temperature of 800K, and are first-class thermoelectric materials having large potential.
Owner:TONGJI UNIV
Polycyclic aromatic compound
PendingCN113906036AHigh triplet excitation energyHigh energyGroup 4/14 element organic compoundsSolid-state devicesOrganic devicesPolymer science
The present invention increases the options for materials for organic devices such as organic EL elements by providing a novel polycyclic aromatic compound wherein a plurality of aromatic rings are linked by means of boron atoms and oxygen atoms, or the like. In addition, the present invention provides an organic EL element which has, for example, excellent luminous efficacy and element longevity by using the novel polycyclic aromatic compound as a material for an organic EL element.
Owner:KWANSEI GAKUIN EDUCTIONAL FOUND +1
High-transmittance heat-adjustable microwave absorption light window based on thermally induced phase change material
PendingCN114501969AAchieving Thermally Tunable FeaturesReduce energy differenceMagnetic/electric field screeningAntennasAbsorptanceOptical transparency
The invention discloses a high-light-transmittance heat-adjustable microwave absorption optical window based on a thermally induced phase change material, and belongs to the field of optical transparent electromagnetic shielding and microwave absorption. The high-transmittance microwave absorption light window is composed of a patterned thermally induced phase change material layer, a transparent medium layer and a transparent microwave shielding layer, wherein the patterned thermally induced phase change material layer and the transparent microwave shielding layer are respectively arranged on two sides of the transparent medium layer in parallel. On the premise of high optical transparency, continuous change of the absorptivity of the optical window can be achieved by controlling the temperature, and the peak absorptivity of the optical window at the peak temperature can be nearly 100%. In addition, the peak temperature of the microwave absorption optical window can be adjusted by controlling the sheet resistance of the thermally induced phase change material and the duty ratio of the patterned thermally induced phase change material layer. The application of the phase change material in the GHz field is expanded, and the phase change material has the advantages of being flexible in design, adjustable in heat, wide in application range and the like.
Owner:HARBIN INST OF TECH
Tertiary-alkyl-substituted polycyclic aromatic compounds
PendingCN111936505AEnergy changeReduce energy differenceSolid-state devicesSemiconductor/solid-state device manufacturingOrganic chemistryPolymer chemistry
The present invention increases the options for organic device materials such as organic EL element materials by introducing a specific tertiary alkyl group into novel polycyclic aromatic compounds inwhich a plurality of aromatic rings are linked by boron atoms and oxygen atoms or the like. The present invention also provides an organic EL element that has, for example, excellent luminous efficiency by using a novel cycloalkyl-substituted polycyclic aromatic compound as an organic EL element material.
Owner:KWANSEI GAKUIN EDUCATIONAL FOUND +1
Blue fluorescence doped material with high efficiency and long service life, application thereof and organic electroluminescent device
ActiveCN112442052AImprove rigidityImprove thermal stabilitySilicon organic compoundsSolid-state devicesFluorescenceOrganic electroluminescence
The invention discloses a blue fluorescence doped material with high efficiency and long service life, application thereof and an organic electroluminescent device. The structural general formula of the blue fluorescence doped material is shown in the specification. When the blue fluorescence doped material is applied to the organic electroluminescent device, the light-emitting efficiency is improved to a certain extent under the same current density, the starting voltage of the device is reduced to a certain extent, the power consumption of the device is relatively reduced, and the service life of the device is correspondingly prolonged.
Owner:NANJING TOPTO MATERIALS CO LTD
Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof
ActiveCN110041337AImprove performanceHigh absorption coefficientOrganic chemistrySolid-state devicesOrganic field-effect transistorOrganic semiconductor
The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated derivative with a monomer I, or mixing a pyrrolopyrrole organic tin compound and a monomer I' to obtaina pyrrolopyrrole organic semiconductor material; enabling the pyrrolopyrrole organic semiconductor material to react with an oxidant to obtain the pyrrolopyrrole organic semiconductor material containing the free radicals. The preparation method disclosed by the invention is simple in synthesis routine and easy in synthesis. The pyrrolopyrrole organic semiconductor material containing the free radicals prepared by the invention has the advantages that the electron mobility is high, the molecular stability is good, the absorption intensity is high, the absorption waveband is narrow, the absorption wavelength reaches a near-infrared waveband, and the pyrrolopyrrole organic semiconductor material containing the free radicals can be used as a free-radical material of devices such as near-infrared and narrowband photoelectric detectors and organic field effect transistors.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
WOLED device, manufacturing method thereof and WOLED display device
PendingCN111785851AReduce manufacturing costExtended service lifeSolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceRed fluorescence
The invention provides a WOLED device, a manufacturing method thereof and a WOLED display device. The WOLED device comprises a cathode and an anode which are arranged oppositely; a red fluorescent light-emitting layer arranged at the side, close to the cathode, of the anode; a green fluorescent light-emitting layer arranged on the surface, close to the cathode, of the red fluorescent light-emitting layer; a spacer layer arranged on the surface, close to the cathode, of the green fluorescent light-emitting layer and comprising a first main body material and a first thermal delay fluorescent material; and blue fluorescent light-emitting layer arranged on the surface, close to the cathode, of the spacer layer. The first main body material and the first thermal delay fluorescent material in the spacer layer of the WOLED device have relatively high triplet state and singlet state, in the TADF material, the energy difference between S1 and T1 energy states is very small, excitons in the T1 state can jump to S1 in an intersystem manner, and then transition from the S1 state to a ground state is carried out to carry out composite luminescence. The TADF plays a role in exciton collection, so that T1 excitons which originally cannot emit light in a transition manner are converted into S1 excitons, and 100% of S1 excitons are formed; the WOLED device is in a full-fluorescence light emitting mode and has a longer service life.
Owner:BOE TECH GRP CO LTD
Boronic acid or boronic acid ester or method for producing polycyclic aromatic compound or oligomer of polycyclic aromatic compound by using same
PendingCN108017662AImprove stabilityEasy to separate and purifySolid-state devicesSemiconductor/solid-state device manufacturingPolycyclic compoundAryl
The present invention relates to a boronic acid or a boronic acid ester or a method for producing a polycyclic aromatic compound or an oligomer of polycyclic aromatic compound by using the same. A boronic acid compound that is effective to manufacture the polycyclic aromatic compound and a method for manufacturing the polycyclic aromatic compound by using the boronic acid compound are provided. The boronic acid compound is manufactured by acting the acid on the compound represented by a following formula (1). In the formula, the A, B and C rings are independently aromatic rings or heteroaromatic rings, Y1 is any esterified -B(OH)2, X1 and X2 are -O-, >N-Ar(Ar is aryl group and the like), -S- or -Se-.
Owner:KWANSEI GAKUIN EDUCTIONAL FOUND +1
Photoelectric conversion device
InactiveUS8895840B2Easy transferDifference in energyNanotechPhotovoltaic energy generationPhotoelectric conversionEngineering
Owner:TOYOTA JIDOSHA KK
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