129 results about "Organic tin compound" patented technology

Monoorgano tin trialkoxide compounds having chemical formula R'SnX3 and containing less than about 5 mol% R'2SnX2are described. R' is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

Monoorgano tin compounds having chemical formula R′SnX3 and high purity are described. R′ is an optionally substituted hydrocarbyl group, X is selected from NR2 and OR, and each R is independently a linear or branched alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

A method for producing a tin compound represented by formula (A1) with a purity of 95 mol % or higher, involves a step of distilling the tin compound, in which the number of plates of the distillation is 10 or more, and the reflux ratio is 30 or less.RSnX3  (A1)In formula (A1), R is an organic group with 1 to 30 carbon atoms, and may be substituted with halogen, oxygen atoms, or nitrogen atoms. X is selected from OR′ and NR′2. R′ is an organic group with 1 to 10 carbon atoms, and part may be substituted with halogen, oxygen atoms, or nitrogen atoms. When there are multiple R′ groups in the molecule, they may have the same or different structures, and they may be bonded to each other to form a cyclic structure.

Monoorgano tin compounds having chemical formula R'SnX3 and high purity are described. R' is an optionally substituted hydrocarbyl group, X is selected from NR2 and OR, and each R is independently a linear or branched alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

An article containing an organic tin compound in an industrially usable container is provided, in which the container is sealable, and the part of the container in contact with the organic tin compound is made of stainless steel with a specific surface structure that has been electrolytically polished. This article makes it possible to store organic tin compounds with high reactivity while maintaining their purity for a long period of time.

Disclosed are a semiconductor photoresist composition and a method of forming a pattern using the same. The semiconductor photoresist composition may include an organotin (Sn) compound and a solvent, the organotin (Sn) compound may include a hydrolyzable ligand substituted with at least one deuterium.

The invention discloses a preparation method of a composite filler with heat conduction and hydrophobic effects. Wherein the raw materials required for preparation comprise hexagonal boron nitride powder, hexadecyl trimethyl ammonium bromide, tetraethoxysilane, a silane coupling agent, ammonia water, hydroxyl-terminated polysiloxane, a catalyst and a solvent; during preparation, boron nitride powder is fully dispersed in an ethanol solvent through ultrasonic dispersion, then tetraethoxysilane and a silane coupling agent are added, after ammonia water is added, mesoporous silica grows on the surface of the boron nitride powder in situ through a sol-gel reaction in an alkaline environment, the obtained powder is filtered and dried, and the mesoporous silica / boron nitride composite material is obtained. The preparation method comprises the following steps: preparing mesoporous silica, dispersing the mesoporous silica in a hydroxyl-terminated polysiloxane solution, adsorbing and connecting hydroxyl-terminated polysiloxane to the surface of the mesoporous silica by using an organic tin compound as a catalyst, filtering, washing and drying the modified powder to obtain the composite functional filler with heat-conducting and hydrophobic effects, and adding the composite functional filler into resin to be dispersed so as to be applied to the field of coating protection.

A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed.Specific details of Chemical Formula 1 are as defined in the specification.

This invention belongs to the field of vanadium redox flow batteries, specifically relating to a vanadium redox flow battery precursor, a vanadium redox flow battery, and a method for preparing the same. The vanadium redox flow battery precursor of this invention includes a positive electrode electrolyte precursor and a negative electrode electrolyte precursor; the positive electrode electrolyte precursor includes vanadium ions, an inorganic acid, a positive electrode side reaction inhibitor precursor, and a solvent; wherein the positive electrode side reaction inhibitor precursor is aniline; the inorganic acid includes hydrochloric acid; the negative electrode electrolyte precursor includes vanadium ions, an inorganic acid, a negative electrode side reaction inhibitor precursor, and a solvent; wherein the negative electrode side reaction inhibitor precursor is a metal compound; the metal compound is selected from one or more of tin compounds, bismuth compounds, and antimony compounds; the inorganic acid includes hydrochloric acid.

Organometallic precursor compositions containing a polyene ligand, such as a diene ligand, are described. Corresponding films are also described and show promising solubility behavior. A synthesis technique is described for forming a polyene-containing organotin trialkoxide compound. The incorporation of polymerization inhibitors and / or blends of organotin compounds with different ligands are described as a way to design radiation sensitive films to have target solubility properties.

An organotin compound photoresist composition for photolithography patterning is described, particularly for extreme ultraviolet radiation (EUV), wherein organotin compound photoresist composition comprises a [n]stannocenophane compound, a solvent, and / or an additive. [n]Stannocenophane contains bridged-stannocenyl group, wherein stannocenyl is bis(cyclopentadienyl)tin, or substituted bis(cyclopentadienyl)tin. Two cyclopentadienyl rings of [n]stannocenophane are connected by n=1, 2, or 3 atom links as intramolecular bridges containing C, Si, Ge, Sn, or O, S, Se, or Te, wherein cyclopentadienyl comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R′, C5H2R′2, C5HR′3, C5R′4, or C5R′5 group.

This invention provides a temperature-resistant shape memory polymer plugging agent, its preparation method, and its application, belonging to the field of oil and gas drilling technology. The preparation method of this plugging agent includes the following steps: mixing acetic acid and perchloric acid to obtain a mixed acid, then adding bromate, potassium permanganate, and natural flake graphite, and stirring to obtain low-temperature expanded graphite; mixing cyanate ester, linear aliphatic epoxy resin, and an active diluent, then adding low-temperature expanded graphite, organotin compounds, and amine catalysts, and carrying out a curing reaction to obtain a temperature-resistant shape memory polymer material; testing the glass transition temperature (Tg) of the synthesized temperature-resistant shape memory polymer material, compressing it at (Tg+5)~(Tg+10)℃, and then cooling, pulverizing, and granulating to obtain the final product. The plugging agent of this invention can rapidly recover its original shape at high temperatures, accumulate and seal leakage channels, and form a high-strength sealing layer in fractures, meeting the requirements of safe and efficient drilling.

The invention relates to a modified geopolymer and a modified geopolymer composite comprising an additive. The additive is preferably a radiopaque additive. The modification is carried out using one or more water-soluble compounds, which are preferably selected from phosphorous compounds, nitrogen compounds, copper compounds, silver compounds, zinc compounds, tin compounds, and magnesium compounds. In addition, the invention relates to compositions containing the modified geopolymer or the modified geopolymer composite. These compositions preferably comprise a vinyl aromatic polymer and are in the form of a foam.

Provided is a tin compound that is a high-performance resist material capable of having high purity and uniform solubility. A tin compound having a tin atom, an organic group R, and an oxygen ligand and / or a hydroxyl ligand, wherein the diffraction angle 2θ (°) of the peak of the maximum intensity in X-ray diffraction measurement is present in the range of 5.00° to 15.00°, the half-value width of the peak of the maximum intensity is in the range of 1.00° to 4.00°, and the aforementioned organic group R has 1 to 30 carbon atoms.

Monoorgano tin trialkoxide compounds having chemical formula R′SnX3 and containing less than about 5 mol % R′2SnX2 are described. R′ is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

An article containing an organic tin compound in an industrially usable container is provided, in which the container is sealable, and the part of the container in contact with the organic tin compound is made of stainless steel with a specific surface structure that has been electrolytically polished. This article makes it possible to store organic tin compounds with high reactivity while maintaining their purity for a long period of time.

To provide a resist composition having high sensitivity and being able to form a pattern with a low exposure amount. A resist composition containing an organic tin compound and an organic boron compound represented by the following formula. (In the formula, R1, R2, and R3 each independently represent an organic group that bonds to boron by a carbon atom, an oxygen-containing organic group that bonds to boron by an oxygen atom, or OH. The oxygen-containing organic group may contain a boron atom. Two groups selected from the group consisting of R1, R2, and R3 may link to form a ring structure.)

The present invention discloses a method for the simultaneous detoxification of organotin waste and the preparation of sodium stannate. The method comprises mixing the organotin waste with a composite additive comprising sodium oxalate and hydrogen peroxide as active ingredients, followed by spray combustion. The combustion exhaust is subjected to dust removal to recover a tin-rich material, which is then water-leached to obtain a sodium stannate solution. By adding sodium oxalate and hydrogen peroxide during the combustion and decomposition of the organotin waste, the method not only enhances the thermal conversion process of the organotin compound, converting its toxic organic functional groups into harmless CO2 and H2O emissions, but also promotes dioxin decomposition, sulfur fixation, and suppresses NOx generation. Furthermore, the method efficiently converts tin into sodium stannate, which is easily recovered by water leaching. The method is simple to operate, highly efficient, and environmentally friendly.

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and / or ultra-high molecular weight polyethylene.

A semiconductor photoresist composition comprising an organotin compound represented by Chemical Formula 1 and a solvent; a method for preparing the same; and a method for forming a pattern using the same. The semiconductor photoresist composition has excellent sensitivity, resolution, and storage stability. Specific details of Chemical Formula 1 are defined in the specification.[Chemical Formula 1]

A composition including a fluorine-containing polymer, at least one carboxylic acid compound selected from a dicarboxylic acid compound having a specific structure and a monocarboxylic acid compound having a specific structure; and at least one cross-linking compounding agent selected from a primary amine compound, a secondary amine compound, an inorganic nitride, an organic tin compound, a peroxide cross-linking agent, a polyol cross-linking agent, a polyamine cross-linking agent, an oxazole cross-linking agent, an imidazole cross-linking agent, and a thiazole cross-linking agent. Also disclosed is a molded article obtained from the composition.

Aspects of the disclosure relate to methods for producing organotin compounds with high purity, which may involve the use of specific additives or reaction conditions. Methods for purifying organotin compounds and suppressing the formation of impurities in organotin compounds are also described.

The invention provides high-purity hydroxypropyl tetrahydropyrantriol and a synthesis method of the high-purity hydroxypropyl tetrahydropyrantriol. The preparation method comprises the following steps that carbohydrate raw materials and glycosyl transferase are mixed in a buffer solution for an enzymatic reaction, the mass percentage of the carbohydrate transferase in the carbohydrate raw materials is 0.1%-5%, and the carbohydrate transferase comprises one or more of UDP-glucosyltransferase and GDP-mannosyl transferase. And after the enzymatic reaction is finished, adding an organic tin compound such as tributyltin hydride into a reaction system in a protective gas range, and carrying out reduction reaction. And after the reduction reaction, removing most of the solvent in the reaction system to obtain a concentrate. And carrying out supercritical extraction on the concentrate by adopting carbon dioxide as a supercritical fluid and ethanol as an entrainer so as to obtain the high-purity hydroxypropyl tetrahydropyrantriol. The synthesis method can achieve the effects of few reactant residues, no boron residues and low synthesis cost.

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and / or ultra-high molecular weight polyethylene.

The present invention provides fungicidal combination comprising: (i) an amount of a compound of Formula Iand (ii) an amount of at least one fungicide (A) selected from the group consisting of pyrimidines, antibiotics, anilinopyrimidines (AP), aromatic hydrocarbons, aryl-phenylketones, azanaphthalenes, benzamides, benzenesulfonamides, benzo-thiadiazoles (BTH), carboxylic acid amides (CAA), carbamates, cyanoacetamideoxime, dicarboximides, dithiolanes, growth regulators, guanidines, heteroaromatics, inorganics, methyl benzimidazole carbamates (MBC), melanin biosynthesis inhibitors (MBI), membrane disruptors, organo tin compounds, oxysterol binding protein homologue inhibition (OSBPI), phenylamides (PA), phenylacetamides, phenylureas, phosphonates, polyoxins, phenylpyrroles, uncouplers of oxidative phosphorylation, dithianon, sulphur, bordeaux-mixture, thiram, zineb, ziram, famoxadone, fenamidone, pyribencarb, ametoctradin, diniconazole, penconazole, triadimefon, triadimenol, triflumizole, bromuconazole, imazalil, tridemorph, flutolanil, thifluzamide and metominostrobin.

Organotin compounds bearing cyclopentadienyl, sulfur, selenium, or tellurium as photoresists, and / or precursors for photolithography patterning, or thermoelectric materials, are described, particularly for extreme ultraviolet radiation (EUV), wherein cyclopentadienyl comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R, CH2R2, C5HR3, C5R4, or C5R5 group with hapticity of η1, η2, η3, η4, or η5 of isomers.

Organotin compositions suitable for radiation-based patterning have ligands that provide a fluorinated group and an unsaturated carbon-carbon bond, such as a C=C bond. The fluorinated group and the unsaturated carbon-carbon bond may or may not be located on the same ligand. Blends of precursors with different ligands provide additional flexibility in precursor design. Fluorinated organometallic compounds are given by formula R UF It can be expressed by Sn(OR')3, where R UF R' is an organic group consisting of 1 to 31 carbon atoms, having at least one C=C bond and at least one fluorine atom bonded to carbon, and this organic group forms a C-Sn bond, while R' is an organic group consisting of 1 to 10 carbon atoms. The precursor is suitable for liquid-phase or gas-phase deposition.

A method for storing organotin compounds and an article that is particularly useful for maintaining the high purity of organotin compounds for semiconductor applications is described. The method for storing an organotin compound involves storing the organotin compound in a container and filling the headspace of the container with an inert gas, in which the container is a multilayer resin container containing, at least a light-shielding layer, a gas barrier layer, and an innermost layer, and the material constituting the innermost layer in contact with the organotin compound includes perfluoroalkoxyalkane, polytetrafluoroethylene, phenol resin, and / or ultra-high molecular weight polyethylene.

A method for producing a tin compound represented by formula (Al) with a purity of 95 mol% or higher, involves a step of distilling the tin compound, in which the number of plates of the distillation is 10 or more, and the reflux ratio is 30 or less. RSnXa (Al) In formula (Al), R is an organic group with 1 to 30 carbon atoms, and may be substituted with halogen, oxygen atoms, or nitrogen atoms. X is selected from OR' and NR'2. R' is an organic group with 1 to 10 carbon atoms, and part may be substituted with halogen, oxygen atoms, or nitrogen atoms. When there are multiple R' groups in the molecule, they may have the same or different structures, and they may be bonded to each other to form a cyclic structure.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.