128 results about "Hydrogen radical" patented technology

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

The invention belongs to the technical field of fire extinguishing agent materials, and provides an aluminum silicate gel fire extinguishing agent for lithium battery fire disasters and a preparation method of the aluminum silicate gel fire extinguishing agent. The fire extinguishing agent is composed of a modified aluminum silicate gelling agent, a modified emulsion, a cross-linking agent, an adsorbent, a flame retardant, a foam stabilizer and a foaming agent, a phosphate group is introduced into the aluminum silicate gelling agent, so that the aluminum silicate gelling agent has better free radical capturing capacity, hydroxyl free radicals and hydrogen free radicals in flames are eliminated, and the flame extinguishing effect is improved. According to the present invention, the modified emulsion is added, such that the good fire extinguishing effect can be provided, the re-combustion phenomenon of the lithium ion battery can be effectively prevented, the long-chain alkyl group and the epoxy group are introduced into the modified emulsion so as to improve the lipophilicity and the hydrophilicity of the emulsion, effectively reduce the surface tension, and improve the wetting effect on the surface of the lithium battery; the fire extinguishing effect is further enhanced, and meanwhile, the activated carbon adsorbent can well adsorb generated harmful gas when the lithium ion battery is on fire.

To suppress deterioration of an etch rate of a copper layer while suppressing deterioration of a shape control property when forming a desired shape to the copper layer.SOLUTION: When etching a copper layer 41 with a thin film formed onto a front surface of a substrate G arranged into an internal part of a processing chamber 11 of a substrate processing apparatus 10, a copper chloride (II) 44 is generated from the copper layer 41 by a chlorine radical generated from a first processing gas containing a chlorine-containing gas and excluding a hydrogen gas in a primary reaction, and generates a trimer of a copper chloride (I) from the copper chloride (II) 44 by a hydrogen radical generated by a second processing gas containing the hydrogen gas and excluding the other chlorine-containing gas and the chlorine-containing gas in a secondary reaction. The primary and secondary reactions are alternately and repeatedly executed at a predetermined number of times.SELECTED DRAWING: Figure 4

A method for preparing green ammonia on the basis of microdroplet gas-liquid interface confined catalytic reaction of water and nitrogen gas. The preparation method comprises: mixing water and a regulator to obtain an aqueous solution, wherein the regulator is selected from one or more of a nanomaterial, a conductive polymer and an inorganic salt; and feeding the aqueous solution into a microdroplet generation device to generate microdroplets, the size of the microdroplets being less than or equal to 10 μm, and spontaneously generating hydrogen radicals and hydroxyl radicals by means of a dual-dielectric-layer strong electric field at a gas-liquid interface of the microdroplets. In a nitrogen atmosphere, a large number of hydrogen radicals and nitrogen in a gas phase are subjected to a radical chain reaction at the gas-liquid interface to generate ammonia, and hydroxyl radicals are combined to generate hydrogen peroxide. The method is simple in terms of preparation process, is green and environmentally friendly, and is not limited by a catalyst, and different production process requirements can be met by simply providing a regulator having a good electron conduction performance, which helps to meet the requirements of environmental protection in the context of "carbon peaking and carbon neutrality", and the strategic requirements of hydrogen energy storage.

A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.

The purpose of the present invention is to provide an EUV photomask blank and an EUV photomask which have high resistance to hydrogen radicals, low EUV reflectance, and a high OD value. A reflective mask blank (10) according to an embodiment of the present invention is provided with at least a substrate (1), a multilayer reflective film (2), a cover layer (3), and a low-reflection part (5) in which a first absorption film (51) having high hydrogen radical resistance and a second absorption film (52) having high hydrogen radical resistance are alternately laminated. The extinction coefficient of the first absorption film (51) is different from the extinction coefficient of the second absorption film (52), or the refractive index of the first absorption film (51) is different from the refractive index of the second absorption film (52), and the extinction coefficient of the second absorption film (52) with respect to EUV light is 0.04 or more.

Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

A film formation method of a gallium nitride film according to an embodiment of the present invention includes the steps of placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber, heating the substrate, supplying a sputtering gas to the vacuum chamber, supplying a nitrogen radical and a hydrogen radical to the vacuum chamber, and applying a voltage to the target to generate a plasma of the sputtering gas. Gallium nitride generated by a recombination reaction between the gallium sputtered from the target and the nitrogen radical, and gallium nitride generated by a recombination reaction between a gallium cation generated from the gallium of the target and a nitrogen anion generated from the nitrogen radical are deposited on the substrate.

Disclosed is a process for efficiently reclaiming copper and EDTA ligands from Cu-ethylene diamine tetraacetic acid (EDTA)-containing wastewater. The process includes: first, the initial pH value of the Cu(II)-EDTA containing wastewater was adjusted to ≥11.0; then proper amounts of formaldehyde and Cu0 powder were added into Cu(II)-EDTA containing wastewater; the hydrogen radical (H·) was generated through the Cu0-catalyzed HCHO reaction and involved in reductive decomplaxetion of Cu(II)-EDTA, resulting in formation of metallic copper and EDTA ligand; and subsequently, the metallic copper can be easily separated and recovered from wastewater after static settlement, and the recovery efficiency is up to 99.9%. In addition, EDTA ligand is efficiently recovered through acidification of the supernatant (pH=3.0), which dramatically reduce the concentration of total nitrogen in the wastewater.

A nucleic acid structural analysis method includes: an HAD-MSn analysis step (101) of introducing a hydrogen radical into a space in which an ion derived from a test nucleic acid is present to perform dissociation of the ion, and performing mass spectrometry on a plurality of fragment ions generated by the dissociation to collect m / z information on the plurality of fragment ions; and a structure estimation step (103) of estimating a structure of the test nucleic acid on a basis of the m / z information on the plurality of fragment ions obtained in the HAD-MSn analysis step. This makes it possible to deal with precursor ions having various charges, and makes it easier to perform the structure estimation of the nucleic acid based on the mass spectrum.

The invention relates to the technical field of nano zero-valent iron wastewater treatment, and discloses a method for in-situ regeneration and inactivation of nZVI through electron beam irradiation and a nano zero-valent iron membrane, the electron beam irradiation and the nano zero-valent iron (nZVI) membrane are cooperated to construct a green long-acting treatment system for Cr (VI)-containing wastewater: the wastewater is controlled to flow through a high-dispersion nZVI membrane in a thin-layer advection mode, and the Cr (VI)-containing wastewater is subjected to in-situ regeneration and inactivation; and meanwhile, electron beam irradiation is received, strong reducing particles such as hydration electrons (eaq-) and hydrogen free radicals (. H) generated by irradiation can carry out in-situ reduction on inactivated nZVI, Fe (0) or part of Fe (II) can continuously play a reducing role, and the long-acting effect of the system for treating Cr (VI)-containing wastewater is achieved together with synchronous intensified reduction of irradiation on Cr (VI). According to the method, the wastewater treatment capacity in unit time can be remarkably improved, meanwhile, the irradiation energy consumption and the nZVI use amount are reduced, efficient circulation of the iron reduction effect is achieved, and iron sludge pollution is greatly reduced.

To provide deposition methods and apparatus for conditioning a process kit to increase process kit lifetime.SOLUTION: A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.SELECTED DRAWING: Figure 1

The invention discloses a gradient annealing-based TOPCon solar cell and a preparation method thereof, and relates to the technical field of cell production, and the method comprises the steps: carrying out a three-stage gradient annealing process on a silicon-based substrate on which a tunneling oxide layer is formed, and comprises the steps: heating the silicon-based substrate to 400-450 DEG C in a mixed atmosphere of H2 and N2, and filling dangling bonds in the tunneling oxide layer; heating the silicon-based substrate to 600-650 DEG C by adopting a pulse heating mode, and switching the atmosphere into a mixed atmosphere of O2 and N2 to form a SiOxNy transition region; and cooling the silicon-based substrate to 300-350 DEG C, putting the silicon-based substrate into plasma equipment, treating the silicon-based substrate in a mixed atmosphere of H2 and Ar for 3 minutes, and exciting hydrogen free radicals to permeate into the interface to repair the interface defects. According to the method, low-temperature hydrogen annealing is set, H atoms are promoted to diffuse to a SiO2 / Si interface in a low-temperature area, dangling bonds are repaired, Si-O bond rearrangement is induced in a medium-temperature area, a compact tunneling layer is formed, then hydrogen free radicals are excited to permeate to the interface and interface defects are repaired through the plasma treatment step, the minority carrier lifetime is prolonged, and the photoelectric conversion rate is improved.

A method for producing green ammonia using a microdroplet reaction based on water and nitrogen gas, and a confinement catalyst reaction at the gas-liquid interface, comprises the steps of: mixing water with a modifier selected from nanomaterials, conductive polymers, and inorganic salts to obtain an aqueous solution; and supplying the aqueous solution to a microdroplet generator to produce microdroplets with a size of 10 μm or less. The strong electric field of the electric double layer at the gas-liquid interface of the microdroplets is utilized to spontaneously generate hydrogen radicals and hydroxyl radicals. Under a nitrogen gas atmosphere, a large amount of hydrogen radicals and nitrogen gas in the gas phase undergo a radical chain reaction at the gas-liquid interface to produce ammonia, and hydroxyl radicals combine to produce hydrogen peroxide. This method is simple, environmentally friendly, not limited by catalysts, and can meet the requirements of different production processes simply by providing modifiers with excellent electronic conductivity. It helps meet environmental protection requirements and the strategic needs of hydrogen energy storage in the context of "dual carbon."

The application discloses a waveguide device structure manufacturing method and a waveguide device structure, and relates to the technical field of waveguide device structures. The method comprises the following steps: forming a waveguide layer and a hard mask on a substrate; etching the waveguide layer through the hard mask to form a ridge-shaped waveguide pattern; using a first fluorine-containing free radical, a first nitrogen-containing free radical and a first oxygen-containing free radical to perform first processing on a first sidewall of the ridge-shaped waveguide pattern with the hard mask to remove a first protruding part; using a second nitrogen-containing free radical and a second oxygen-containing free radical to perform second processing on the first sidewall to perform surface passivation protection; the first processing and the second processing are alternately cycled for multiple times to reduce the surface roughness of the first sidewall; after the hard mask is removed, using a first hydrogen-containing free radical and a hydroxyl-containing free radical to perform third processing on the first sidewall to remove a second protruding part, and the surface roughness of the first sidewall is further reduced. The application can significantly improve the smoothness of the surface of the ridge-shaped waveguide pattern, thereby improving the key performance of the device.

A film formation apparatus includes a vacuum chamber, a substrate support portion and a target support portion provided in the vacuum chamber, a sputtering gas supply unit for supplying a sputtering gas to the vacuum chamber, a sputtering power supply, a first radical supply source connected to the vacuum chamber and configured to be capable of supplying at least one of nitrogen radicals generated from an N2 gas and hydrogen radicals generated from an H2 gas to the vacuum chamber, a second radical supply source connected to the vacuum chamber and configured to be capable of supplying SiH3 radicals to the vacuum chamber, and a control unit configured to control the sputtering gas supply unit, the sputtering power supply, the first radical supply source, and the second radical supply source.

The purpose of the present invention is to provide: a reflective mask for patterning transfer, which uses light having a wavelength in the extreme ultraviolet region as a light source and which is provided with an absorptive film having resistance to hydrogen radicals, and a reflective mask blank used for manufacturing the reflective mask; and a method for manufacturing the reflective mask using the reflective mask blank. A reflective photomask blank (10) according to the present embodiment comprises: a substrate (1); a reflective layer (2) which is formed on the substrate (1) and reflects EUV light; and an absorptive layer (4) which is formed on the reflective layer (2) and absorbs the EUV light. The absorptive layer (4) contains platinum (Pt) in the largest amount among all the elements constituting the absorptive layer (4), and, apart from the platinum (Pt), also contains at least one element selected from a first material group. The film density of the absorptive layer (4) is 9.0 g / cm3 or more.

Doped or undoped silicon carbide films may be deposited using remote plasma chemical vapor deposition (CVD) techniques. One or more silicon-containing precursors are provided to the reaction chamber. A free radical species, such as a free radical species of hydrogen, is provided in a substantially low energy state or ground state and interacts with one or more silicon-containing precursors to deposit a silicon carbide film. A carbon-containing precursor may flow with one or more silicon-containing precursors, where the carbon-containing precursor has one or more carbon-carbon double bonds or triple bonds, and each silicon-containing precursor is a silane-based precursor having at least one silicon atom having two or more hydrogen atoms bonded to the silicon atom.

The invention relates to a method for removing halogenated pollutants in water through alternating current pulse electrochemistry. The method comprises the following steps: applying a periodic alternating current pulse, so that the halogenated pollutants in the water are alternately subjected to electrochemical oxidation and electrochemical reduction, and the process is repeated. In the electrochemical oxidation stage, the halogenated pollutants can be oxidized through intermediate species such as direct electron transfer or indirectly generated hydroxyl free radicals or the combination of the two; in the electrochemical reduction stage, the halogenated pollutants can be reduced through direct electron transfer or hydrogen free radicals and other reducing intermediates, or through the combination of the direct electron transfer and the hydrogen free radicals, redox degradation of the halogenated pollutants is achieved. Compared with the prior art, the alternating-current pulse electrochemical method combines the advantages of an oxidation method and a reduction method, and has the characteristics of high reaction rate, more thorough degradation, high dehalogenation rate, no need of additional chemical reagents, high stability and lower electric energy consumption.

A method of forming a nitride film includes: (a) preparing a substrate; (b) supplying a halogen-containing raw material gas into a processing container; (c) supplying a nitrogen-containing gas into the processing container, wherein the nitride film is formed by repeating a cycle including (b) and (c) a set number of times; and (d) reforming the nitride film by supplying a hydrogen-containing gas to the processing container to generate a hydrogen radical by a direct current (DC) pulse voltage, between (b) and (c).

In a water purification method, polluted water passes from top to bottom through an adsorption tower 3 filled with an adsorption material. The adsorption tower is filled with chemically charged ceramic particles, and pollutants in the water are bound to the adsorption material. The pretreated water is then passed through an initiation mixing chamber 5 into which hydrogen peroxide is injected, the hydrogen peroxide is electrolyzed to form hydrogen radicals, after which a liquid catalyst is injected. And then the pretreated water passes through the reduction tower 11 from bottom to top. The reduction tower is filled with a ceramic carrier, and the carrier is coated with a catalyst. In the reduction tower, the compound is reduced into a simple substance by hydrogen free radicals under the action of a liquid catalyst. In a further initiation mixing chamber 5 and a further reduction column 11, the reduction step and the initiation step are repeated a plurality of times in order to achieve staged degradation.

Disclosed is a coating composition for forming a free radical scavenging coating on a substrate. The coating composition can comprise a matrix-forming polymer and an organic free radical scavenger that is reactable with hydrogen radicals. The coating composition can form a polymeric organic radical scavenging coating when applied to a metallic substrate surface to at least partly prevent free radical contact with the substrate surface.

The present invention provides a method of treating a substrate. The method may include: a first treatment operation in which hydrogen radicals are transferred to a substrate adjusted to have a first temperature to treat the substrate; and a second treatment operation in which the hydrogen radicals are transferred to the substrate adjusted to have a second temperature that is different from the first temperature to treat the substrate.

This invention provides a method for recovering silver from waste silver plating solution, belonging to the field of heavy metal industrial wastewater treatment technology. The invention involves adding sodium hypophosphite to waste silver plating solution containing complexed silver. After the sodium hypophosphite dissolves, the pH of the system is adjusted to alkaline. A reduction reaction is then carried out under heating conditions to generate elemental silver particles. This invention utilizes the in-situ generation of hydrogen free radicals from sodium hypophosphite under alkaline heating conditions to achieve direct reduction and complex breaking of stable silver nicotinic acid complexes and elemental silver conversion. This process is completed in one step, simplifying the traditional complex multi-step process of "oxidation-complex breaking-ion release-chemical precipitation" into a single reduction step, significantly shortening the treatment process and improving the reaction rate and treatment efficiency.

A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on the first recess, the plasma clean process including placing the substrate on a holder disposed in a process chamber, heating the holder to a process temperature between 300° C. and 1000° C., introducing hydrogen gas into a plasma generation chamber connected to the process chamber, igniting a plasma within the plasma generation chamber to form hydrogen radicals, and exposing surfaces of the recess to the hydrogen radicals. The method also includes epitaxially growing a source / drain region in the first recess.

The present invention provides a method for roughening the surface of an indium tin oxide film, comprising a preparation stage and a roughening stage, wherein in the preparation stage, a wafer prepared with an indium tin oxide film is placed in a process chamber using a microwave plasma source, oxygen and water vapor are introduced, and an atmosphere mixed with oxygen and water vapor is formed in the process chamber under a first process condition; in the roughening stage, oxygen and water vapor are introduced, and water vapor is dissociated to generate hydrogen free radicals under a second process condition, and oxygen is dissociated to generate oxygen free radicals, the hydrogen free radicals are used to reduce indium ions and tin ions in the indium tin oxide, and the oxygen free radicals are used to oxidize the reduced indium and tin, and the surface of the indium tin oxide film is roughened by controlling the ratio of hydrogen free radicals and oxygen free radicals. The method for roughening the surface of an indium tin oxide film provided by the present invention can improve the applicability of roughening the surface of an indium tin oxide film and improve the controllability of the roughening degree.

The invention discloses a numerical calculation method and system considering flame curvature for hydrogen-ammonia mixed combustion, and belongs to the field of energy and combustion engineering. Aiming at the problem that a traditional model is difficult to capture a strong curvature effect, the method comprises the following steps: constructing a composite space flame model (CSM), explicitly introducing a curvature parameter in a progress variable space and solving a self-contained equation; forming a table look-up database in combination with a one-dimensional free propagation flame (FPP) database; generating a verification data set by adopting direct numerical simulation (DNS) and carrying out NOx reaction path analysis; mapping the database to a four-dimensional parameter space of a mixing score, a reaction process variable, a normalized enthalpy and a hydrogen free radical; field variables are output through table look-up and compared with DNS data for verification, the method creatively adopts hydrogen free radicals to represent the curvature effect, and the prediction precision of the unstable combustion mode of the hydrogen-ammonia mixed flame and pollutant generation is remarkably improved.

This invention discloses a numerical calculation method and system for hydrogen-ammonia co-combustion considering flame curvature, belonging to the field of energy and combustion engineering. Addressing the problem that traditional models struggle to capture strong curvature effects, this method constructs a Composite Space Flame Model (CSM), explicitly introduces curvature parameters into the progress variable space, and solves self-contained equations; it combines a one-dimensional free-propagating flame (FPP) database to form a lookup table database; and it uses direct numerical simulation (DNS) to generate a validation dataset and performs NO... x Reaction path analysis; mapping the database to a four-dimensional parameter space of mixing fraction, reaction process variables, normalized enthalpy, and hydrogen radicals; outputting field variables by table lookup and comparing with DNS data for verification; this method innovatively uses hydrogen radicals to characterize curvature effect, significantly improving the prediction accuracy of unstable combustion modes and pollutant generation in hydrogen-ammonia blended flames.