17 results about "Hydrogen radical" patented technology

Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

A method for producing green ammonia using a microdroplet reaction based on water and nitrogen gas, and a confinement catalyst reaction at the gas-liquid interface, comprises the steps of: mixing water with a modifier selected from nanomaterials, conductive polymers, and inorganic salts to obtain an aqueous solution; and supplying the aqueous solution to a microdroplet generator to produce microdroplets with a size of 10 μm or less. The strong electric field of the electric double layer at the gas-liquid interface of the microdroplets is utilized to spontaneously generate hydrogen radicals and hydroxyl radicals. Under a nitrogen gas atmosphere, a large amount of hydrogen radicals and nitrogen gas in the gas phase undergo a radical chain reaction at the gas-liquid interface to produce ammonia, and hydroxyl radicals combine to produce hydrogen peroxide. This method is simple, environmentally friendly, not limited by catalysts, and can meet the requirements of different production processes simply by providing modifiers with excellent electronic conductivity. It helps meet environmental protection requirements and the strategic needs of hydrogen energy storage in the context of "dual carbon."

The application discloses a waveguide device structure manufacturing method and a waveguide device structure, and relates to the technical field of waveguide device structures. The method comprises the following steps: forming a waveguide layer and a hard mask on a substrate; etching the waveguide layer through the hard mask to form a ridge-shaped waveguide pattern; using a first fluorine-containing free radical, a first nitrogen-containing free radical and a first oxygen-containing free radical to perform first processing on a first sidewall of the ridge-shaped waveguide pattern with the hard mask to remove a first protruding part; using a second nitrogen-containing free radical and a second oxygen-containing free radical to perform second processing on the first sidewall to perform surface passivation protection; the first processing and the second processing are alternately cycled for multiple times to reduce the surface roughness of the first sidewall; after the hard mask is removed, using a first hydrogen-containing free radical and a hydroxyl-containing free radical to perform third processing on the first sidewall to remove a second protruding part, and the surface roughness of the first sidewall is further reduced. The application can significantly improve the smoothness of the surface of the ridge-shaped waveguide pattern, thereby improving the key performance of the device.

This invention provides a method for recovering silver from waste silver plating solution, belonging to the field of heavy metal industrial wastewater treatment technology. The invention involves adding sodium hypophosphite to waste silver plating solution containing complexed silver. After the sodium hypophosphite dissolves, the pH of the system is adjusted to alkaline. A reduction reaction is then carried out under heating conditions to generate elemental silver particles. This invention utilizes the in-situ generation of hydrogen free radicals from sodium hypophosphite under alkaline heating conditions to achieve direct reduction and complex breaking of stable silver nicotinic acid complexes and elemental silver conversion. This process is completed in one step, simplifying the traditional complex multi-step process of "oxidation-complex breaking-ion release-chemical precipitation" into a single reduction step, significantly shortening the treatment process and improving the reaction rate and treatment efficiency.

This invention discloses a numerical calculation method and system for hydrogen-ammonia co-combustion considering flame curvature, belonging to the field of energy and combustion engineering. Addressing the problem that traditional models struggle to capture strong curvature effects, this method constructs a Composite Space Flame Model (CSM), explicitly introduces curvature parameters into the progress variable space, and solves self-contained equations; it combines a one-dimensional free-propagating flame (FPP) database to form a lookup table database; and it uses direct numerical simulation (DNS) to generate a validation dataset and performs NO... x Reaction path analysis; mapping the database to a four-dimensional parameter space of mixing fraction, reaction process variables, normalized enthalpy, and hydrogen radicals; outputting field variables by table lookup and comparing with DNS data for verification; this method innovatively uses hydrogen radicals to characterize curvature effect, significantly improving the prediction accuracy of unstable combustion modes and pollutant generation in hydrogen-ammonia blended flames.

This invention discloses a gallium oxide patterning method and its application based on the photocatalytic self-etching properties of gallium oxide. The gallium oxide patterning method includes: contacting the surface of the gallium oxide substrate to be etched with a process gas; and irradiating the surface of the gallium oxide substrate with patterned ultraviolet light to cause the gallium oxide substrate to catalytically decompose the process gas, generating hydrogen and / or hydrogen radicals. The generated hydrogen and / or hydrogen radicals then spontaneously etch the corresponding areas of the gallium oxide substrate. Compared with traditional gallium oxide patterning processes, this invention eliminates the need for hard mask deposition (such as silicon dioxide), spin-coating of photoresist, and silicon dioxide etching steps, achieving gallium oxide patterning in one step. It requires only one device to complete the gallium oxide patterning process, significantly reducing the cost of gallium oxide patterning. Furthermore, it primarily achieves gallium oxide etching through in-situ chemical reactions, minimizing etching damage to the gallium oxide wafer and effectively improving the surface quality of the etched gallium oxide.

This invention belongs to the technical field of capacitor fault detection and discloses a method and system for identifying capacitor faults based on the self-healing characteristic gas of capacitors. The method includes the following steps: S1, obtaining the actual mass of solid carbon when capacitors with different sheet resistances and carbon-hydrogen ratios fail; S2, calculating the theoretical mass of solid carbon generated by capacitors with different sheet resistances and carbon-hydrogen ratios at different temperatures; the theoretical mass is obtained as follows: calculating the content ratio of hydrocarbon free radicals in the capacitor at different temperatures, the sublimation temperature of carbon, and the mass of carbon in the capacitor; the mass of carbon in the capacitor above the sublimation temperature minus the mass of carbon in the capacitor below the sublimation temperature is the theoretical mass of solid carbon; S3, comparing the theoretical mass of solid carbon in capacitors with different sheet resistances and carbon-hydrogen ratios with the actual mass; capacitors with a theoretical mass greater than the actual mass are faulty, otherwise they are not faulty. This invention solves the problems of low accuracy and efficiency in capacitor fault identification.

An object of the present invention is to provide a technique of etching SiGe with respect to Ge with high selectivity. As one of etching methods in the present invention, the etching method for etching, as a processing object, a silicon germanium film of a film structure containing the silicon germanium film and a germanium film formed over a surface of a wafer, includes the steps of: supplying a hydrogen radical to the film structure while heating the wafer, and forming a modified layer over a surface of the film structure; and after the step of forming the modified layer, cooling the wafer to 0° C. to room temperature, supplying a gas containing sulfur hexafluoride or sulfur hexafluoride and argon to the modified layer and etching the silicon germanium film.

A mass spectrometer including: a reaction chamber into which a precursor ion derived from a sample molecule is introduced; a collision gas supply part configured to supply collision gas to the reaction chamber; a radical supply part configured to supply hydrogen radicals, oxygen radicals, nitrogen radicals, or hydroxyl radicals to the reaction chamber; a dissociation operation control part configured to control operations of the collision gas supply part and the radical supply part to generate the product ions by collision-induced dissociation and radical attachment dissociation of the precursor ion inside the reaction chamber, an ion detection part configured to mass-separate and detect ions ejected from the reaction chamber, and a spectrum data generation part configured to generate spectrum data based on a detection result by the ion detection part.

This invention discloses an active hydrogen radical generator for targeted reduction of nickel ions in electronic wastewater, relating to the field of wastewater treatment technology. It includes a main body with a rear inspection cover, a dielectric barrier discharge unit, a gas-liquid mass transfer unit, a wastewater supply unit, and an electrical control cabinet located within the main body. A sandwich-type DBD structure is formed by an inner layer of mesh ceramic, an outer layer of mesh ceramic, and a porous polyimide film. The pore sizes of these three layers are uniform and correspond one-to-one, enabling the formation of stable and uniform low-temperature plasma within micron-level micropores. This eliminates the generation of large electric arcs, significantly increasing the generation and distribution uniformity of active hydrogen radicals, achieving targeted and efficient reduction of nickel ions. Simultaneously, relying on the micro-hollow cathode effect, it enhances electron ionization efficiency, further improving the reduction reaction rate and the purity of elemental nickel.

The present invention aims to provide a reflective photomask that has excellent hydrogen radical resistance, reduces the deterioration of transferability caused by phase difference in the reflective portion, and improves the adhesion (interlayer adhesion) between the capping layer and the protective layer. A reflective mask (10) according to the present embodiment comprises a substrate (1), a multilayer reflective film (2), a capping layer (3), an absorption portion (4), and a protective layer (5) formed on the side of the capping layer (3), on the absorption portion (4), and on the side of the absorption portion (4). The extinction coefficient k of the absorption portion (4) is 0.04 or higher for EUV light, the capping layer (3) and the protective layer (5) are formed of the same material, the reflectance of EUV light in the reflection portion, which is an area where the absorption portion (4) is not formed on the capping layer (3), is 50% or higher, the total film thickness of the capping layer (3) and the protective layer (5) is 3 nm or higher, and the capping layer (3) and the protective layer (5) have resistance to hydrogen radicals.

Disclosed is a semiconductor fabrication method comprising forming a under layer and a photoresist layer on a substrate, performing an optical proximity correction (OPC) on a layout, and using a photomask manufactured with the corrected layout to form a photoresist pattern on the under layer. The step of performing the OPC comprises generating a first function that comprises a first correction parameter, producing a resist image from the first function, measuring a target error for the resist image, and correcting the first correction parameter into a second correction parameter. The first correction parameter and the second correction parameter comprise a certain number of hydrogen radicals that migrate from the under layer to the photoresist layer.

The application discloses a preparation method of a ridge waveguide structure and the ridge waveguide structure, and comprises the following steps: forming a first waveguide cladding layer, a waveguide layer and a hard mask on a substrate; etching the waveguide layer to form a ridge waveguide pattern through the hard mask; using first hydrogen radicals to perform first processing on the sidewall of the ridge waveguide pattern with the hard mask, so as to remove first protruding parts on the sidewall; using first hydroxyl radicals to perform second processing on the sidewall, so as to perform surface passivation protection on the sidewall; alternately performing the first processing and the second processing for multiple times, so as to reduce the sidewall roughness; removing the hard mask; using second hydrogen radicals and second hydroxyl radicals to perform third processing on the exposed surface of the ridge waveguide pattern, so as to reduce the surface roughness; and forming a second waveguide cladding layer for covering the ridge waveguide pattern. The application can significantly improve the smoothness of the surface of the ridge waveguide pattern, thereby improving the key performance of a device.

A method for annealing a material includes providing a substrate with a metal-containing material in proximity to or in contact with the material on a surface of the substrate, and exposing the metal-containing material to hydrogen radicals, where the thermal energy from the recombination of the hydrogen radicals locally heats the metal-containing material and thereby transfers the thermal energy to the material, thereby locally annealing the material.

This application discloses a thin film and its preparation method, a light-emitting device and its preparation method, and a display device. The thin film preparation method includes: providing a solid film containing metal oxide nanoparticles and a first compound; and subjecting the solid film to an electrochemical treatment to obtain the thin film. In the technical solution proposed in this application, the solid film containing metal oxide nanoparticles and the first compound is subjected to an electrochemical treatment, and the first compound generates highly reactive hydrogen radicals through a photochemical reaction, which can reduce defects in the thin film.

The present application aims to provide a reflective photomask having excellent hydrogen radical resistance, capable of reducing deterioration of transferability caused by phase difference of a reflection portion, and capable of improving adhesion of a cover layer and a protective layer (interlayer adhesion). The reflective mask (10) according to the present embodiment includes a substrate (1), a multilayer reflection film (2), a cover layer (3), an absorption portion (4), and a protective layer (5) formed on the cover layer (3), on the absorption portion (4), and on the side surface of the absorption portion (4), the absorption portion (4) has an extinction coefficient k of 0.04 or more for EUV light, the cover layer (3) and the protective layer (5) are formed of the same material, the reflectance of a reflection portion, which is a region of the cover layer (3) where the absorption portion (4) is not formed, with respect to EUV light is 50% or more, the total film thickness of the cover layer (3) and the protective layer (5) is 3 nm or more, and the cover layer (3) and the protective layer (5) have hydrogen radical resistance.