52 results about "Hydrogen radical" patented technology

A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.

The purpose of the present invention is to provide an EUV photomask blank and an EUV photomask which have high resistance to hydrogen radicals, low EUV reflectance, and a high OD value. A reflective mask blank (10) according to an embodiment of the present invention is provided with at least a substrate (1), a multilayer reflective film (2), a cover layer (3), and a low-reflection part (5) in which a first absorption film (51) having high hydrogen radical resistance and a second absorption film (52) having high hydrogen radical resistance are alternately laminated. The extinction coefficient of the first absorption film (51) is different from the extinction coefficient of the second absorption film (52), or the refractive index of the first absorption film (51) is different from the refractive index of the second absorption film (52), and the extinction coefficient of the second absorption film (52) with respect to EUV light is 0.04 or more.

Vapor phase methods of depositing a metal or a semimetal—comprising materials on a substrate are provided. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal—comprising material on the substrate. Further provided are materials and structures deposited by the disclosed methods, as well as deposition assemblies.

Disclosed is a process for efficiently reclaiming copper and EDTA ligands from Cu-ethylene diamine tetraacetic acid (EDTA)-containing wastewater. The process includes: first, the initial pH value of the Cu(II)-EDTA containing wastewater was adjusted to ≥11.0; then proper amounts of formaldehyde and Cu0 powder were added into Cu(II)-EDTA containing wastewater; the hydrogen radical (H·) was generated through the Cu0-catalyzed HCHO reaction and involved in reductive decomplaxetion of Cu(II)-EDTA, resulting in formation of metallic copper and EDTA ligand; and subsequently, the metallic copper can be easily separated and recovered from wastewater after static settlement, and the recovery efficiency is up to 99.9%. In addition, EDTA ligand is efficiently recovered through acidification of the supernatant (pH=3.0), which dramatically reduce the concentration of total nitrogen in the wastewater.

The invention relates to the technical field of nano zero-valent iron wastewater treatment, and discloses a method for in-situ regeneration and inactivation of nZVI through electron beam irradiation and a nano zero-valent iron membrane, the electron beam irradiation and the nano zero-valent iron (nZVI) membrane are cooperated to construct a green long-acting treatment system for Cr (VI)-containing wastewater: the wastewater is controlled to flow through a high-dispersion nZVI membrane in a thin-layer advection mode, and the Cr (VI)-containing wastewater is subjected to in-situ regeneration and inactivation; and meanwhile, electron beam irradiation is received, strong reducing particles such as hydration electrons (eaq-) and hydrogen free radicals (. H) generated by irradiation can carry out in-situ reduction on inactivated nZVI, Fe (0) or part of Fe (II) can continuously play a reducing role, and the long-acting effect of the system for treating Cr (VI)-containing wastewater is achieved together with synchronous intensified reduction of irradiation on Cr (VI). According to the method, the wastewater treatment capacity in unit time can be remarkably improved, meanwhile, the irradiation energy consumption and the nZVI use amount are reduced, efficient circulation of the iron reduction effect is achieved, and iron sludge pollution is greatly reduced.

The invention discloses a gradient annealing-based TOPCon solar cell and a preparation method thereof, and relates to the technical field of cell production, and the method comprises the steps: carrying out a three-stage gradient annealing process on a silicon-based substrate on which a tunneling oxide layer is formed, and comprises the steps: heating the silicon-based substrate to 400-450 DEG C in a mixed atmosphere of H2 and N2, and filling dangling bonds in the tunneling oxide layer; heating the silicon-based substrate to 600-650 DEG C by adopting a pulse heating mode, and switching the atmosphere into a mixed atmosphere of O2 and N2 to form a SiOxNy transition region; and cooling the silicon-based substrate to 300-350 DEG C, putting the silicon-based substrate into plasma equipment, treating the silicon-based substrate in a mixed atmosphere of H2 and Ar for 3 minutes, and exciting hydrogen free radicals to permeate into the interface to repair the interface defects. According to the method, low-temperature hydrogen annealing is set, H atoms are promoted to diffuse to a SiO2 / Si interface in a low-temperature area, dangling bonds are repaired, Si-O bond rearrangement is induced in a medium-temperature area, a compact tunneling layer is formed, then hydrogen free radicals are excited to permeate to the interface and interface defects are repaired through the plasma treatment step, the minority carrier lifetime is prolonged, and the photoelectric conversion rate is improved.

A method for producing green ammonia using a microdroplet reaction based on water and nitrogen gas, and a confinement catalyst reaction at the gas-liquid interface, comprises the steps of: mixing water with a modifier selected from nanomaterials, conductive polymers, and inorganic salts to obtain an aqueous solution; and supplying the aqueous solution to a microdroplet generator to produce microdroplets with a size of 10 μm or less. The strong electric field of the electric double layer at the gas-liquid interface of the microdroplets is utilized to spontaneously generate hydrogen radicals and hydroxyl radicals. Under a nitrogen gas atmosphere, a large amount of hydrogen radicals and nitrogen gas in the gas phase undergo a radical chain reaction at the gas-liquid interface to produce ammonia, and hydroxyl radicals combine to produce hydrogen peroxide. This method is simple, environmentally friendly, not limited by catalysts, and can meet the requirements of different production processes simply by providing modifiers with excellent electronic conductivity. It helps meet environmental protection requirements and the strategic needs of hydrogen energy storage in the context of "dual carbon."

The application discloses a waveguide device structure manufacturing method and a waveguide device structure, and relates to the technical field of waveguide device structures. The method comprises the following steps: forming a waveguide layer and a hard mask on a substrate; etching the waveguide layer through the hard mask to form a ridge-shaped waveguide pattern; using a first fluorine-containing free radical, a first nitrogen-containing free radical and a first oxygen-containing free radical to perform first processing on a first sidewall of the ridge-shaped waveguide pattern with the hard mask to remove a first protruding part; using a second nitrogen-containing free radical and a second oxygen-containing free radical to perform second processing on the first sidewall to perform surface passivation protection; the first processing and the second processing are alternately cycled for multiple times to reduce the surface roughness of the first sidewall; after the hard mask is removed, using a first hydrogen-containing free radical and a hydroxyl-containing free radical to perform third processing on the first sidewall to remove a second protruding part, and the surface roughness of the first sidewall is further reduced. The application can significantly improve the smoothness of the surface of the ridge-shaped waveguide pattern, thereby improving the key performance of the device.

Disclosed is a coating composition for forming a free radical scavenging coating on a substrate. The coating composition can comprise a matrix-forming polymer and an organic free radical scavenger that is reactable with hydrogen radicals. The coating composition can form a polymeric organic radical scavenging coating when applied to a metallic substrate surface to at least partly prevent free radical contact with the substrate surface.

The present invention provides a method of treating a substrate. The method may include: a first treatment operation in which hydrogen radicals are transferred to a substrate adjusted to have a first temperature to treat the substrate; and a second treatment operation in which the hydrogen radicals are transferred to the substrate adjusted to have a second temperature that is different from the first temperature to treat the substrate.

This invention provides a method for recovering silver from waste silver plating solution, belonging to the field of heavy metal industrial wastewater treatment technology. The invention involves adding sodium hypophosphite to waste silver plating solution containing complexed silver. After the sodium hypophosphite dissolves, the pH of the system is adjusted to alkaline. A reduction reaction is then carried out under heating conditions to generate elemental silver particles. This invention utilizes the in-situ generation of hydrogen free radicals from sodium hypophosphite under alkaline heating conditions to achieve direct reduction and complex breaking of stable silver nicotinic acid complexes and elemental silver conversion. This process is completed in one step, simplifying the traditional complex multi-step process of "oxidation-complex breaking-ion release-chemical precipitation" into a single reduction step, significantly shortening the treatment process and improving the reaction rate and treatment efficiency.

The invention discloses a numerical calculation method and system considering flame curvature for hydrogen-ammonia mixed combustion, and belongs to the field of energy and combustion engineering. Aiming at the problem that a traditional model is difficult to capture a strong curvature effect, the method comprises the following steps: constructing a composite space flame model (CSM), explicitly introducing a curvature parameter in a progress variable space and solving a self-contained equation; forming a table look-up database in combination with a one-dimensional free propagation flame (FPP) database; generating a verification data set by adopting direct numerical simulation (DNS) and carrying out NOx reaction path analysis; mapping the database to a four-dimensional parameter space of a mixing score, a reaction process variable, a normalized enthalpy and a hydrogen free radical; field variables are output through table look-up and compared with DNS data for verification, the method creatively adopts hydrogen free radicals to represent the curvature effect, and the prediction precision of the unstable combustion mode of the hydrogen-ammonia mixed flame and pollutant generation is remarkably improved.

This invention discloses a numerical calculation method and system for hydrogen-ammonia co-combustion considering flame curvature, belonging to the field of energy and combustion engineering. Addressing the problem that traditional models struggle to capture strong curvature effects, this method constructs a Composite Space Flame Model (CSM), explicitly introduces curvature parameters into the progress variable space, and solves self-contained equations; it combines a one-dimensional free-propagating flame (FPP) database to form a lookup table database; and it uses direct numerical simulation (DNS) to generate a validation dataset and performs NO... x Reaction path analysis; mapping the database to a four-dimensional parameter space of mixing fraction, reaction process variables, normalized enthalpy, and hydrogen radicals; outputting field variables by table lookup and comparing with DNS data for verification; this method innovatively uses hydrogen radicals to characterize curvature effect, significantly improving the prediction accuracy of unstable combustion modes and pollutant generation in hydrogen-ammonia blended flames.

A method includes forming a dummy gate structure over a semiconductor structure over a substrate. Gate spacers are formed on sidewalls of the dummy gate structure. The semiconductor structure is recessed to form recesses on opposite sides of the dummy gate structure. A channel portion of the semiconductor structure remains beneath the dummy gate structure. A first oxygen-removal process is performed to the channel portion, using hydrogen radicals, to remove oxygens in the channel portion. A second oxygen-removal process, using a hydrogen-containing gas mixture, is performed to remove an oxide layer formed on sidewalls of the channel portion. The hydrogen radicals used in the first oxygen-removal process have sizes smaller than the hydrogen-containing gas mixture used in the second oxygen-removal process. Source / drain structures are deposited in the recesses and connected to the channel portion. The dummy gate structure is replaced with a metal gate structure.

The invention discloses application of a conjugate with an ultrasonic radiation response group, and belongs to the technical field of medicinal chemistry. The conjugate has a structure as shown in a formula I: PG-L-D, and is applied to preparation of ultrasonic responsive drugs or imaging agents. The embodiment of the invention can be used for preparing a medicine or an imaging agent with the general formula based on the chemical characteristics of a specific ultrasonic response group PG. PG is an ultrasonic radiation response group; l is a linking group; d is a residue of a masked active molecule. According to the embodiment of the invention, hydrogen free radicals generated by an ultrasonic cavitation effect are directly utilized to induce free radical cracking reduction of PG groups, so that chemical bonds are broken, and masked active molecules are released. According to the scheme, a specific PG group is introduced, dependence on a complex biological endogenous reducing agent is avoided, the advantages of deep tissue penetration, high biological safety and non-invasiveness of ultrasonic waves are fully utilized, and a new means is provided for realizing space-time controllable release of drugs in focus parts such as tumors and inflammations.

This invention discloses a gallium oxide patterning method and its application based on the photocatalytic self-etching properties of gallium oxide. The gallium oxide patterning method includes: contacting the surface of the gallium oxide substrate to be etched with a process gas; and irradiating the surface of the gallium oxide substrate with patterned ultraviolet light to cause the gallium oxide substrate to catalytically decompose the process gas, generating hydrogen and / or hydrogen radicals. The generated hydrogen and / or hydrogen radicals then spontaneously etch the corresponding areas of the gallium oxide substrate. Compared with traditional gallium oxide patterning processes, this invention eliminates the need for hard mask deposition (such as silicon dioxide), spin-coating of photoresist, and silicon dioxide etching steps, achieving gallium oxide patterning in one step. It requires only one device to complete the gallium oxide patterning process, significantly reducing the cost of gallium oxide patterning. Furthermore, it primarily achieves gallium oxide etching through in-situ chemical reactions, minimizing etching damage to the gallium oxide wafer and effectively improving the surface quality of the etched gallium oxide.

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

The invention discloses an efficient reduction treatment system and separation method for radioactive elements. The system comprises a uranium solution primary tank, a photocatalytic reaction device and a uranium solution product tank, the method comprises the following steps: adding a SiW12-CdS composite photocatalyst into the uranyl carbonate waste liquid, introducing argon gas for bubbling to form an oxygen-free atmosphere, and continuously stirring for reaction to ensure that adsorption-desorption balance is achieved and a dark reaction is completed; a xenon lamp serves as a light source to irradiate reaction liquid obtained after the dark reaction is completed, and photocatalytic reduction of uranium is completed; wherein the SiW12-CdS composite photocatalyst is obtained by adding CdS into a silicotungstic acid aqueous solution and carrying out sealed stirring reaction at room temperature, the SiW12-CdS has a Z-type heterostructure, and a photocatalytic reaction system of the Z-type heterogeneous material SiW12-CdS effectively generates hydrogen free radicals with extremely strong reduction potential in an argon atmosphere, so that the strong coordination effect of [UO2 (CO3) 3] < 4-> can be destroyed, and the photocatalytic activity of the [UO2 (CO3) 3] < 4-> is improved. The high uranium reduction separation efficiency can be achieved under the oxygen-free condition.

This invention belongs to the technical field of capacitor fault detection and discloses a method and system for identifying capacitor faults based on the self-healing characteristic gas of capacitors. The method includes the following steps: S1, obtaining the actual mass of solid carbon when capacitors with different sheet resistances and carbon-hydrogen ratios fail; S2, calculating the theoretical mass of solid carbon generated by capacitors with different sheet resistances and carbon-hydrogen ratios at different temperatures; the theoretical mass is obtained as follows: calculating the content ratio of hydrocarbon free radicals in the capacitor at different temperatures, the sublimation temperature of carbon, and the mass of carbon in the capacitor; the mass of carbon in the capacitor above the sublimation temperature minus the mass of carbon in the capacitor below the sublimation temperature is the theoretical mass of solid carbon; S3, comparing the theoretical mass of solid carbon in capacitors with different sheet resistances and carbon-hydrogen ratios with the actual mass; capacitors with a theoretical mass greater than the actual mass are faulty, otherwise they are not faulty. This invention solves the problems of low accuracy and efficiency in capacitor fault identification.

The invention relates to the technical field of metal powder injection molding, in particular to an adhesive for metal powder injection molding and a preparation method of the adhesive. The invention discloses an adhesive for metal powder injection molding, which is prepared from the following raw materials in parts by weight: 50 to 70 parts of polyethylene glycol, 10 to 15 parts of high-density polyethylene, 20 to 25 parts of polypropylene, 5 to 10 parts of microcrystalline wax, 5 to 8 parts of stearic acid, 3 to 5 parts of ammonium sulfate, 1 to 2 parts of silane coupling agent and 0.1 to 0.5 part of antioxidant. Ammonium sulfate can be decomposed into sulfuric acid and ammonia gas in a high-temperature environment (higher than 300 DEG C), the ammonia gas can be combined with hydrocarbon free radicals generated by a high-molecular material at a high temperature, the possibility of coking and carbonization of the high-molecular material is reduced, the situation that carbon elements permeate into metal is further reduced, and the performance of a formed metal part is effectively guaranteed.

A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.

A semi-solid state sodium-ion battery and a preparation method therefor. An electrolyte is a gel polymer electrolyte formed by subjecting an electrolytic solution to formation at 50-80°C. On the basis of the total mass of the electrolytic solution being 100 wt%, the electrolytic solution comprises the following components in percentage by weight: 3-20 wt% of a fluorine-containing acrylate monomer; 0.01-0.1 wt% of an initiator; 10-20 wt% of a sodium salt; 2-10 wt% of an additive; and the balance of an organic solvent. The organic solvent is ethylene carbonate and propylene carbonate. The fluorine-containing acrylate monomer is used, which has a high degree of polymerization, reducing the residue of unsaturated double bond monomers in the polymer electrolyte. When the battery undergoes thermal runaway, the fluorine-containing acrylate monomer decomposes to generate fluorine radicals, thereby eliminating hydrogen radicals and hydroxyl radicals from participating in a chain combustion reaction in a gas phase, and improving the flame retardancy of the electrolyte.

To extend the life of an optical element in an EUV lithography system.SOLUTION: Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by controlling the introduction of gas into a vacuum chamber (26) housing the optical elements. The gas may be added to the flow of another gas, such as hydrogen, or may be alternated with the introduction of hydrogen radicals.SELECTED DRAWING: Figure 5

The application discloses a kind of high-efficiency resource recycling process for copper and EDTA ligand in Cu-EDTA-containing wastewater, which first adjusts the pH of Cu-EDTA-containing wastewater to be greater than or equal to 11.0, then adds an appropriate amount of formaldehyde and copper powder to the wastewater, the copper powder catalyzes the formaldehyde to generate hydrogen radicals, the hydrogen radicals reduce Cu in the metal complex to elemental copper, realizing the decomplexation of Cu-EDTA, then the zero-valent copper in the wastewater is recovered by the way of standing precipitation. 2+ In addition, the above-mentioned reduction and decomplexation reaction can also avoid the decomposition of EDTA, and the EDTA ligand in the solution can be recovered by adjusting the pH of the supernatant to be 3.0, the recovery of EDTA can reduce the concentration of total nitrogen (TN) in the wastewater, thereby significantly reducing the total nitrogen load of subsequent biochemical reaction, which is beneficial to realize the discharge requirement of effluent TN. This process realizes the simultaneous recovery of copper and EDTA ligand from electroplating wastewater for the first time, which has the advantages of economic efficiency, simple operation, easy engineering application, etc.

An object of the present invention is to provide a technique of etching SiGe with respect to Ge with high selectivity. As one of etching methods in the present invention, the etching method for etching, as a processing object, a silicon germanium film of a film structure containing the silicon germanium film and a germanium film formed over a surface of a wafer, includes the steps of: supplying a hydrogen radical to the film structure while heating the wafer, and forming a modified layer over a surface of the film structure; and after the step of forming the modified layer, cooling the wafer to 0° C. to room temperature, supplying a gas containing sulfur hexafluoride or sulfur hexafluoride and argon to the modified layer and etching the silicon germanium film.

The invention discloses a hydrogen free radical generating device and application thereof, the hydrogen free radical generating device comprises a hydrogen free radical generator, a feed port of an anode of the hydrogen free radical generator is connected with a feed port of a flow meter, and a feed port of the flow meter is connected with a discharge port of a first storage chamber; and a discharge hole of the cathode of the hydrogen free radical generator is connected with the reaction raw material chamber. Hydrogen or water or some organic matters are introduced into the anode of the hydrogen free radical generator device, so that the hydrogen or water or some organic matters become hydrogen ions under the action of an anode catalyst and move to the cathode under the action of potential, free radicals are formed at the cathode, and the hydrogen free radical generator device can be applied to various fields by coupling different reaction processes. Therefore, the generation of hydrogen free radicals is quantitatively controlled through current and the supply amount of hydrogen or water or some organic matters, which is difficult to realize by photocatalysis or thermocatalysis.

In the present invention, a fuel injection valve (10) comprises a first member (11) and a second member (40), each having an abutment surface that abuts against the other in the presence of hydrogen. At least one of the first member and the second member is a movable part, and the abutment surface of the first member is configured as a first abutment surface provided with a lubricating film of which at least a part is hydrogen-terminated. The abutment surface of the second member is configured as a second abutment surface provided with a catalyst part having the function of dissociating hydrogen into hydrogen radicals.

A method for fabricating a semiconductor device is provided, including: providing a substrate in a reaction chamber; forming an untreated silicon nitride film on the substrate; and forming a treated silicon nitride film on the untreated silicon nitride film. Forming the untreated silicon nitride film includes: (a) supplying a first silicon precursor into the reaction chamber; and (b) supplying a nitrogen precursor into the reaction chamber. (a) and (b) are performed sequentially and repeatedly to form the untreated silicon nitride film. Forming the treated silicon nitride film includes: (c) supplying a second silicon precursor into the reaction chamber; (d) performing a first hydrogen radical purge by supplying a plurality of hydrogen radicals into the reaction chamber to reduce impurities in chemical species from the second silicon precursor; and (e) supplying a second nitrogen precursor into the reaction chamber. (c), (d), and (e) are performed sequentially and repeatedly to form the treated silicon nitride film. The untreated silicon nitride film and the treated silicon nitride film together form a silicon nitride layer.

A mass spectrometer including: a reaction chamber into which a precursor ion derived from a sample molecule is introduced; a collision gas supply part configured to supply collision gas to the reaction chamber; a radical supply part configured to supply hydrogen radicals, oxygen radicals, nitrogen radicals, or hydroxyl radicals to the reaction chamber; a dissociation operation control part configured to control operations of the collision gas supply part and the radical supply part to generate the product ions by collision-induced dissociation and radical attachment dissociation of the precursor ion inside the reaction chamber, an ion detection part configured to mass-separate and detect ions ejected from the reaction chamber, and a spectrum data generation part configured to generate spectrum data based on a detection result by the ion detection part.

Provided is a reduction treatment method in which hydrogen radicals are efficiently generated in an amount required for reduction treatment and the surface of an object to be treated is reduced by a relatively simple treatment process. A reduction treatment method including: irradiating a hydrogen radical source-containing material with ultraviolet light having a wavelength of 255 nm or less to generate hydrogen radicals; and bringing the generated hydrogen radicals into contact with a surface of an object to be treated to reduce the surface.