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Method for increasing the interface magnetic anisotropy energy of ferromagnetic metal/oxide bilayer film

A technology of magnetic anisotropy and ferromagnetic metals, which is applied in the field of high-density information storage and sensing, can solve the problems of interdiffusion of atoms in other layers, affecting the performance of PMA, and large dependence, and achieves simple preparation, convenient control, and low cost. low effect

Active Publication Date: 2018-11-16
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, heat treatment will cause interdiffusion of atoms in other layers, affecting the performance of PMA
And these methods all need the external field to adjust, therefore, the dependence on the external field is great, also can bring certain side effect, will limit its application

Method used

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  • Method for increasing the interface magnetic anisotropy energy of ferromagnetic metal/oxide bilayer film
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  • Method for increasing the interface magnetic anisotropy energy of ferromagnetic metal/oxide bilayer film

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Embodiment Construction

[0017] figure 1 The preparation conditions of the middle sample are as follows: firstly, the surface acidification treatment is carried out on the Si substrate, wherein the thickness of the substrate is 0.5 mm; the pH value of the surface acidification treatment is 6, and the acidification time is 3 minutes. Then, utilize magnetron sputtering method, on the Si substrate after above-mentioned treatment, deposit Cr atom (thickness is ), FeN x atoms (thickness is ), MgO atoms (thickness is ) and Ta atoms (thickness is ), thus preparing the Si substrate Multi-layer film, the background vacuum before sputtering deposition is 2×10 -5 Pa, the argon pressure during sputtering is 0.3Pa. When preparing the FeN layer, the argon / nitrogen pressure ratio is 6:1, and the N atom content x is 0.1. After the deposition is completed, it is heat-treated in a vacuum environment with a vacuum degree of 1×10 -5 Pa, 100 °C / 20 min to promote uniform occupation of N atoms at interstitia...

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Abstract

The invention relates to a method for increasing the interface magnetic anisotropy energy of a ferromagnetic metal / oxide bilayer film, belonging to the technical field of high-density information storage and sensing. Chromium Cr / FeNx / MgO / Ta multilayer films were deposited on Si substrates after surface acidification. After deposition, heat treatment is carried out to promote the uniform occupationof N atoms at interstitial sites. N atom can change the coordination environment of Fe, the charge redistribution at Fe / MgO interface is caused, the energy band structure of Fe is effectively regulated, the electron occupation on a dz2 orbit is greatly increased, and the hybrid state of Fe3dz2-O2pz orbit can be regulated, so that the magnetic anisotropy energy of the interface of the thin film isremarkably increased. In the invention, only nitrogen is needed to be introduced into the process of preparing the Fe thin film, and the orbital hybridization intensity of FeO can be directly regulated and the magnetic anisotropy energy of the interface is increased. There is no need of high cost rare metal or expensive additional device, which has the characteristics of simple preparation and convenient control. With the advantages of high efficiency and low cost, the method for increasing the interface magnetic anisotropy energy of a ferromagnetic metal / oxide bilayer film is suitable for the future spintronics technology.

Description

technical field [0001] The invention belongs to the technical field of high-density information storage and sensing, and relates to a method for controlling the interfacial magnetic anisotropy of a key core material unit in the above-mentioned field—a ferromagnetic metal / oxide double-layer film, and in particular provides a method for using nitrogen Atomic doping method to increase the perpendicular magnetic anisotropy of ferromagnetic metal / oxide bilayer films. Background technique [0002] In recent years, a research hotspot in the field of information storage and sensing is to prepare ferromagnetic metal (FM) / oxide (MO) heterostructures with perpendicular magnetic anisotropy (PMA), such as CoFeB / MgO, Co / AlO x , Fe / MgO, etc., which are the core material units for constructing new, low-power, and high-stability spintronic devices, such as magnetic random access memory, track memory, tunnel junction sensor, etc. The PMA of the FM / MO bilayer film is mainly derived from the...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F41/14H01F41/22
CPCH01F41/14H01F41/22
Inventor 冯春姚明可王世如唐晓磊于广华
Owner UNIV OF SCI & TECH BEIJING
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