WOLED device, manufacturing method thereof and WOLED display device

Abstract

The invention provides a WOLED device, a manufacturing method thereof and a WOLED display device. The WOLED device comprises a cathode and an anode which are arranged oppositely; a red fluorescent light-emitting layer arranged at the side, close to the cathode, of the anode; a green fluorescent light-emitting layer arranged on the surface, close to the cathode, of the red fluorescent light-emitting layer; a spacer layer arranged on the surface, close to the cathode, of the green fluorescent light-emitting layer and comprising a first main body material and a first thermal delay fluorescent material; and blue fluorescent light-emitting layer arranged on the surface, close to the cathode, of the spacer layer. The first main body material and the first thermal delay fluorescent material in the spacer layer of the WOLED device have relatively high triplet state and singlet state, in the TADF material, the energy difference between S1 and T1 energy states is very small, excitons in the T1 state can jump to S1 in an intersystem manner, and then transition from the S1 state to a ground state is carried out to carry out composite luminescence. The TADF plays a role in exciton collection, so that T1 excitons which originally cannot emit light in a transition manner are converted into S1 excitons, and 100% of S1 excitons are formed; the WOLED device is in a full-fluorescence light emitting mode and has a longer service life.

Description

technical field [0001] The invention relates to the field of display technology, in particular, to a WOLED device, a manufacturing method thereof, and a WOLED display device. Background technique [0002] T / E WOLED has attracted extensive attention in the field of organic flat panel display, especially in the field of ultra-high PPI microdisplay, due to its advantages of high resolution, large aperture ratio and flexible substrate selection. Currently, 2-stack WOLED is the mainstream device structure for realizing white light. The development and transfer of 2-stack WOLED (2-stacked white light) devices has high brightness and low power consumption, but there are still problems of aggravated crosstalk and high cost; 1-stackWOLD (1-stacked white light) has fewer layers and less quantity The production cycle is short, and the production capacity can be increased, which can meet the needs of some low-brightness products (500nits) customers. [0003] The 1-stack WOLED has only...

AI Technical Summary

Problems solved by technology

The development and transfer of 2-stack WOLED (2-stacked white light) devices has high brightness and low power consumption, but there are still problems of aggravated crosstalk and high cost; 1-stackWOLD (1-stacked white light) has fewer layers and less quantity The production cycle is short, the production capacity can be increased, and it can meet the needs of some low-brightness products (500nits) customers

The existing 1-stack WOLED mainly has two structures: full fluorescent WOLED and phosphorescent fluorescent WOLED (hybrid WOLED). Although the full fluorescent WOLED has a stable device life, the device efficiency is low, and the theoretical internal quantum efficiency of the full fluorescent WOLED can only reach 25. %; while the hybrid WOLED has high efficiency, but due to the quenching of triplet excitons, the lifetime of the device is very poor

[0004] Therefore, the research on WOLED devices needs to be in-depth

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