Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the direction of point light source, light source, lighting and heating equipment, etc., can solve the problem of affecting the luminous efficiency and service life of QLED, the low probability of hole and electron recombination, and the hole injection/transport barrier Large and other problems, to achieve the effect of improving current efficiency and service life, reducing energy consumption, good performance and service life

Active Publication Date: 2015-12-09
TCL CORPORATION
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a QLED containing a charge generation layer, aiming to solve the problem of large hole injection / transport barriers in existing QLEDs due to the deep HOMO energy levels of red, green, and blue three-color quantum dot luminescent materials. The recombination probability of holes and electrons is low, which affects the luminous efficiency and service life of QLED, thereby limiting its application in the field of TV

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0020] combine Figure 3-7 , the embodiment of the present invention provides a QLED, including an anode 1, a red / green / blue quantum dot light-emitting layer 6 and a cathode 8 that are stacked sequentially from bottom to top, and is characterized in that it also includes a charge generation layer 4, and the The charge generation layer 4 is stacked between the anode 1 and the red / green / blue quantum dot light-emitting layer 6, such as image 3 shown.

[0021] The QLED in the embodiment of the present invention generates a large number of holes by introducing the ch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to quantum dot light emitting diodes and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises an anode, a red / green / blue quantum dot light emitting layer and a cathode which are arranged in an overlapping manner from down to up. The quantum dot light emitting diode further comprises a charge generation layer, and the charge generation layer is arranged between the anode and the red / green / blue quantum dot light emitting layer in an overlapping manner. The preparation method of the quantum dot light emitting diode comprises the following steps of: providing an anode substrate; successively depositing the charge generation layer and the red / green / blue quantum dot light emitting layer on the anode substrate; and depositing the cathode on the red / green / blue quantum dot light emitting layer.

Description

technical field [0001] The invention belongs to the field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of electroluminescent device, which has many advantages such as high brightness, low power consumption, and large-area solution processing. It has attracted extensive attention from academia and industry in recent years. Such as figure 1 As shown, a traditional QLED usually consists of an anode (1'), a hole injection layer (2'), a hole transport layer (3'), a red / green / blue quantum dot light-emitting layer (6'), an electron transport layer ( 7') and a cathode (8'), wherein the electron transport layer can have both electron transport and electron injection functions. Because the highest occupied orbital (HOMO) energy level of the red, green and blue quantum dot luminescent materials of the existing QLED is very ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/06H01L33/00F21Y101/02
Inventor 李正吉
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com