P-type gallium oxide doped film and preparation method thereof

Abstract

The invention relates to a p-type gallium oxide doped film, and discloses a device and a method for preparing the p-type gallium oxide doped film. A zinc dopant is adopted as an acceptor of the p-type gallium oxide doped film, and equivalent elements of oxygen are doped to regulate a valence band top structure of gallium oxide. The method comprises the steps that a zinc doped gallium oxide target is adopted as a sputtering target material; equivalent element elementary substances are accommodated in an evaporation source; a sputtering gas conveys steam of the equivalent elements to a radio frequency glow discharge zone; a primary product of an acceptor-equivalent element gallium oxide co-doped film is deposited on a substrate through radio frequency magnetron sputtering; and the primary product is subjected to thermal treatment and activation, and the p-type gallium oxide doped film is obtained. According to the method, the problem that the energy level of the acceptor is relatively far away from the valence band top is effectively solved, the self-compensation effect of oxygen vacancy is inhibited, and hole mobility is increased.

Description

technical field

[0001] The invention relates to a p-type doped gallium oxide thin film and a preparation method thereof, belonging to the technical field of electronic materials. Background technique

[0002] Gallium oxide is a wide bandgap semiconductor oxide with five isomers, among which monoclinic β-phase gallium oxide is the most stable, and generally prepared gallium oxide films are monoclinic β-phase after high-temperature annealing treatment structure. The band gap of monoclinic β-phase gallium oxide is about 4.9eV, the corresponding absorption edge is located at 250nm, and the transmittance in the deep ultraviolet region (≤300nm) can reach about 80%, which is a potential ultraviolet photoelectric device Electrode materials and UV detection materials. Gallium oxide single crystal can be prepared by floating zone method and guided mode method, which is expected to achieve high-quality, large-scale and low-cost preparation. It will become a trend to replace sapphire ...

Examples

Embodiment 1

[0026] figure 1A schematic diagram of a p-type doped gallium oxide thin film preparation device designed for the present invention, a substrate holder 2 and a target groove 4 are arranged in the vacuum chamber 1 of the device schematic diagram, and a rotatable The baffle 9, the vacuum chamber 1 is evacuated through the exhaust system 3, and the target groove 4 is connected with the radio frequency matching device 8 and the radio frequency power supply 7. The elemental powder of the equivalent state element is placed in the evaporation source 6, and the vapor pressure of the equivalent state element is regulated by changing the temperature of the evaporation source 6. The substrate is installed on the substrate holder 2, the sputtering target is installed in the target groove 4, the sputtering gas argon enters the vacuum chamber 1 through the argon inlet 5, and the argon gas loads the vapor of the equivalent element into the glow discharge region, which increases the activity ...

Embodiment 2

[0032] The p-type doped gallium oxide film preparation device used in this example is the same as that in Example 1. Specifically, the preparation of a zinc-selenium co-doped gallium oxide film includes the following steps:

[0033] (1) Fully mix gallium oxide powder with a purity of 99.99% and zinc oxide powder with a purity of 99.99% at a weight ratio of 93:7, and press it into an embryo body of Φ60mm-4mm under a pressure of 65MPa. The pressing time is 20 minutes, and it is sent into High-temperature sintering furnace, sintering in air at 1300°C for 900 minutes, and sintering into zinc-doped gallium oxide ceramic targets.

[0034] (2) Install the cleaned n-type gallium oxide substrate on the substrate holder 2 in the vacuum chamber 1, install the zinc-doped gallium oxide ceramic target in the target groove 4 in the vacuum chamber 1, and adjust the target and substrate The bottom distance is 75 mm, and the equivalent element elemental selenium powder is placed in the evaporat...

Embodiment 3

[0037] The p-type doped gallium oxide film preparation device used in this example is the same as that in Example 1. Specifically, the preparation of a zinc-tellurium co-doped gallium oxide film includes the following steps:

[0038] (1) Fully mix the gallium oxide powder with a purity of 99.99% and the zinc oxide powder with a purity of 99.99% at a weight ratio of 94:6, and press it into a Φ60mm-4mm embryo body under a pressure of 60MPa. The pressing time is 25 minutes, and the High-temperature sintering furnace, sintering in air at 1350°C for 800 minutes, and sintering into zinc-doped gallium oxide ceramic targets.

[0039] (2) Install the cleaned sapphire substrate on the substrate holder 2 in the vacuum chamber 1, install the zinc-doped gallium oxide ceramic target in the target groove 4 in the vacuum chamber 1, and adjust the distance between the target and the substrate as 75 mm, put the equivalent element elemental tellurium powder in the evaporation source 6 . Vacuumi...

technical field

[0001] The invention relates to a p-type doped gallium oxide thin film and a preparation method thereof, belonging to the technical field of electronic materials. Background technique

[0002] Gallium oxide is a wide bandgap semiconductor oxide with five isomers, among which monoclinic β-phase gallium oxide is the most stable, and generally prepared gallium oxide films are monoclinic β-phase after high-temperature annealing treatment structure. The band gap of monoclinic β-phase gallium oxide is about 4.9eV, the corresponding absorption edge is located at 250nm, and the transmittance in the deep ultraviolet region (≤300nm) can reach about 80%, which is a potential ultraviolet photoelectric device Electrode materials and UV detection materials. Gallium oxide single crystal can be prepared by floating zone method and guided mode method, which is expected to achieve high-quality, large-scale and low-cost preparation. It will become a trend to replace sapphire ...

Examples

Embodiment 1

[0026] figure 1A schematic diagram of a p-type doped gallium oxide thin film preparation device designed for the present invention, a substrate holder 2 and a target groove 4 are arranged in the vacuum chamber 1 of the device schematic diagram, and a rotatable The baffle 9, the vacuum chamber 1 is evacuated through the exhaust system 3, and the target groove 4 is connected with the radio frequency matching device 8 and the radio frequency power supply 7. The elemental powder of the equivalent state element is placed in the evaporation source 6, and the vapor pressure of the equivalent state element is regulated by changing the temperature of the evaporation source 6. The substrate is installed on the substrate holder 2, the sputtering target is installed in the target groove 4, the sputtering gas argon enters the vacuum chamber 1 through the argon inlet 5, and the argon gas loads the vapor of the equivalent element into the glow discharge region, which increases the activity ...

Embodiment 2

[0032] The p-type doped gallium oxide film preparation device used in this example is the same as that in Example 1. Specifically, the preparation of a zinc-selenium co-doped gallium oxide film includes the following steps:

[0033] (1) Fully mix gallium oxide powder with a purity of 99.99% and zinc oxide powder with a purity of 99.99% at a weight ratio of 93:7, and press it into an embryo body of Φ60mm-4mm under a pressure of 65MPa. The pressing time is 20 minutes, and it is sent into High-temperature sintering furnace, sintering in air at 1300°C for 900 minutes, and sintering into zinc-doped gallium oxide ceramic targets.

[0034] (2) Install the cleaned n-type gallium oxide substrate on the substrate holder 2 in the vacuum chamber 1, install the zinc-doped gallium oxide ceramic target in the target groove 4 in the vacuum chamber 1, and adjust the target and substrate The bottom distance is 75 mm, and the equivalent element elemental selenium powder is placed in the evaporat...

Embodiment 3

[0037] The p-type doped gallium oxide film preparation device used in this example is the same as that in Example 1. Specifically, the preparation of a zinc-tellurium co-doped gallium oxide film includes the following steps:

[0038] (1) Fully mix the gallium oxide powder with a purity of 99.99% and the zinc oxide powder with a purity of 99.99% at a weight ratio of 94:6, and press it into a Φ60mm-4mm embryo body under a pressure of 60MPa. The pressing time is 25 minutes, and the High-temperature sintering furnace, sintering in air at 1350°C for 800 minutes, and sintering into zinc-doped gallium oxide ceramic targets.

[0039] (2) Install the cleaned sapphire substrate on the substrate holder 2 in the vacuum chamber 1, install the zinc-doped gallium oxide ceramic target in the target groove 4 in the vacuum chamber 1, and adjust the distance between the target and the substrate as 75 mm, put the equivalent element elemental tellurium powder in the evaporation source 6 . Vacuumi...

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