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316results about How to "High absorption coefficient" patented technology

A gradient doped silicon-based heterojunction solar cell and its preparation method

The invention discloses a gradient doped silicon-based heterojunction solar cell and a preparation method thereof. A plurality of layers of amorphous silicon membranes of which the doped concentration is increased sequentially are deposited on the surface of crystalline silicon serving as a substrate, and a transparent conductive film with a certain thickness is deposited and an electrode is prepared to prepare the gradient doped silicon-based heterojunction solar cell, wherein the amorphous silicon membranes contact the crystalline silicon to achieve a good passivating effect and obtain highopen-circuit voltage; a plurality of gradient doped amorphous silicon layers can form a strong inner electric field to reduce the composite loss of photo-induced carriers, improve the collection rateof minority carriers and increase short-circuit current; and the doped concentration of the doped amorphous silicon layers contacting the electrode is high, the resistivity is low, and contact resistance between the doped amorphous silicon layers and the electrode can be reduced to improve filling factors of the solar cell. Therefore compared with the conventional silicon-based heterojunction solar cell, the gradient doped silicon-based heterojunction solar cell has high photoelectric conversion efficiency.
Owner:SHANGHAI NORMAL UNIVERSITY

Ultraviolet and infrared double-color detector and manufacturing method thereof

InactiveCN101872798ASmall infrared absorption coefficientImprove IR ResponseFinal product manufactureSemiconductor devicesOptoelectronicsOhmic contact
The invention discloses an ultraviolet and infrared double-color detector and a manufacturing method thereof. The ultraviolet and infrared double-color detector comprises a substrate, a buffer layer, a first n-type ohmic contact layer, a multicycle layer, a second n-type ohmic contact layer, an intrinsic layer, a transparent electrode, an upper electrode, a middle electrode and a lower electrode, wherein a material structure for the ultraviolet and infrared double-color detector is grown on the substrate; the buffer layer is grown on the substrate; the first n-type ohmic contact layer is grown on the buffer layer for ohmic contact; the multicycle layer is comprised of a first intrinsic layer and a heavily-doped n-type layer, which are grown alternately; the second n-type ohmic contact layer is grown on the multicycle layer and part of the second n-type ohmic contact layer serves as a n-type ohmic contact electrode; the intrinsic layer has a forbidden band width of Eg3 which is less than or equal to Eg2 and is grown on the second n-type ohmic contact layer; the transparent electrode is formed on the intrinsic layer having the forbidden band width of Eg3; the upper electrode is formed in a small area on the transparent electrode; the middle electrode is formed in the electrode window of the second n-type ohmic contact layer; and the lower electrode is formed in the electrode window of the first second n-type ohmic contact layer.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Titanium dioxide/polyaniline photocatalyst with 3D pattern structure and preparation method of titanium dioxide/polyaniline photocatalyst

The invention relates to a titanium dioxide/polyaniline photocatalyst with a 3D pattern structure and a preparation method of the titanium dioxide/polyaniline photocatalyst. The preparation method comprises the steps of dispersing carbon balls in absolute ethyl alcohol, adding TBOT, dropping distilled water, centrifugally separating, and drying to obtain brown powder; calcining the brown powder to obtain hollow titanium dioxide nanometer particles, dispersing the hollow titanium dioxide nanometer particles in the absolute ethyl alcohol, dispersing ANI (aniline) in hydrochloric acid, agitating in an ice-water bath to obtain a deep green suspension; and centrifugally separating, and drying to obtain a deep green TiO2/polyaniline (PANI) compound photocatalyst. Polyaniline is used as a sensitizer for modifying titanium dioxide, the operation is simple, reaction conditions are mild and the cost is low. Light is repeatedly refracted and absorbed by using polyaniline nanometer sheets which are mutually meshed, and thus full utilization on solar light is realized, the specific surface area of a composite material can be increased by the polyaniline nanometer sheets, more active sites are provided for light-catalyzed reaction, the light energy conversion efficiency and the photo-catalysis efficiency are improved, the PANI is high in absorption coefficient in a visible light region, and azo-dyes, namely MO and CR, can be directly degraded by using solar light.
Owner:JILIN UNIV

Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof

InactiveCN103258869AImprove IR ResponseAvoid the effects of photoconductivityFinal product manufactureSemiconductor devicesOptoelectronicsElectrode Contact
The invention discloses an ultraviolet and infrared double-color detector based on zinc oxide materials and a manufacturing method thereof and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a substrate (10), a buffer layer (11), a first n-type ohmic electrode contact layer (12), an infrared sensitive layer, a second n-type ohmic electrode contact layer (16), an ultraviolet sensitive layer (17) and a transparent electrode layer (19) which is arranged above the ultraviolet sensitive layer, wherein the buffer layer (11), the first n-type ohmic electrode contact layer (12), the infrared sensitive layer, the second n-type ohmic electrode contact layer (16), the ultraviolet sensitive layer (17) and the transparent electrode layer (19) are sequentially arranged on the substrate (10) in a growth mode. A bottom electrode (22), a middle electrode (21) and a top electrode (20) are arranged on the first n-type ohmic electrode contact layer (12), the second n-type ohmic electrode contact layer (16) and the transparent electrode layer (19) respectively. A three-electrode structure is adopted by the detector, namely, the middle electrode in the three-electrode structure serves as a common electrode of ultraviolet and infrared detection, an upper electrode and a lower electrode respectively serve as the other electrode of the ultraviolet and infrared detection, and the detector achieves the aim of simultaneously detecting ultraviolet radiation and infrared radiation.
Owner:HARBIN INST OF TECH

Double clad all-solid-state photonic crystal fiber and preparation method thereof

The invention relates to a double clad all-solid-state photonic crystal fiber and a preparation method thereof. The double clad all-solid-state photonic crystal fiber comprises a fiber core, an inner cladding and an outer cladding. The optical fiber is provided with the outer cladding of which the outer surface is of a round shape. The inner cladding is of a hexagon shape with a sawtooth structure. The preparation method of the double clad all-solid-state photonic crystal fiber comprises the following steps of: using a metal sleeve with an internal hexagon structure as a die; preparing a photonic crystal fiber per-form rod by a stacking method; replacing cladding air holes with glass with low refractive index, so that the making process and the fusion welding of the optical fiber are more simple and convenient; and forming the optical fiber, of which the outer surface is round and the inner cladding is of the hexagon shape with the sawtooth structure by utilizing the surface tension of the glass in the wire drawing process. A pumping light adsorption coefficient of the optical fiber is improved. The coupling efficiency and the pumping light adsorption coefficient are effectively improved. Compared with a double-layer optical fiber with a conventional structure, the output laser power and efficiency are improved by over twice.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI

Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof

The invention relates to a solar cell, in particular to a nanowire solar cell which has a heterojunction radial structure and is formed by monocrystalline silicon, nanometer silicon and aluminum oxide. The cell structure is a cell structure of n-type monocrystalline silicon / p-type nanometer silicon / aluminum oxide or n-type monocrystalline silicon / i-type nanometer silicon / p-type nanometer silicon / aluminum oxide. In the nanowire solar cell, a monocrystalline silicon (c-Si) nanowire is prepared on a n-type monocrystalline silicon substrate by a wet etching process, and hydrogenated i-type and p-type nanometer silicon (nc-Si:H) membranes are prepared on a monocrystalline nanowire by a plasma enhanced chemical vapor deposition (PECVD) method to form a radial structure of c-Si(n) / nc-Si:H(p) orc-Si(n) / nc-Si:H(i) / nc-Si:H(p) from inside to outside; an Al2O3 layer is prepared by an atomic layer deposition (ALD) technology, and an aluminum-doped zinc oxide layer is prepared by the ALD technology; and finally, an aluminum electrode is subjected to vacuum evaporation on the reverse side of the n-type monocrystalline silicon, and is annealed quickly to prepare the silicon-based nanowire solarcell. By the preparation method, the high-efficiency silica-based nanowire solar cell can be prepared, and low-quality monocrystalline silicon materials can be utilized, so the cost of the cell can be reduced.
Owner:南通东湖国际商务服务有限公司
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