10results about How to "High absorption coefficient" patented technology

The invention relates to the technical field of semiconductor materials and devices, and provides a superlattice infrared detector which comprises a substrate and an epitaxial structure growing on the substrate. The epitaxial structure comprises a GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer and an InAs / InAs < 1-y > Sby superlattice absorption layer, wherein the components of the GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer are gradually changed, the InAs / InAs < 1-y > Sby superlattice absorption layer grows on the GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer, and the InAs / InAs < 1-y > Sby superlattice absorption layer is matched with the lattice of the GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer. The invention also provides a preparation method of the superlattice infrared detector. According to the invention, the GaSb / Ga1-xInxSb superlattice buffer layer with gradually changed components is introduced, the InAs / InAs1-ySby superlattice absorption layer grown on the buffer layer is improved, and the periodic thickness of the absorption layer is reduced, so that the absorption coefficient of the material of the absorption layer is improved, and the quantum efficiency of the device is improved.

The utility model discloses a photoelectric detector, which comprises a photoelectric detector layer arranged on a substrate and a stress source layer coated on the photoelectric detector layer, the photoelectric detector layer is provided with a light absorption area layer, and the stress source layer is used for providing stress for the light absorption area layer. And enabling the light absorption region layer to correspondingly generate tensile strain, so that the light absorption region layer is converted from an indirect band gap structure to a direct band gap structure. The silicon-based germanium avalanche detector can solve the problem that the absorption coefficient of a traditional silicon-based germanium photoelectric detector is sharply reduced from 1.55 microns, so that the response rate of the traditional silicon-based germanium avalanche detector between low-transmission-loss optical wavebands is low, and the sensitivity, the high-waveband response rate and the detection performance level of the photoelectric detector can be improved.

The embodiment of the invention provides an epitaxial structure of an infrared detector and a preparation method thereof, the infrared detector comprises a substrate, and the epitaxial structure comprises a buffer layer, a P-type layer, an i long wave absorption layer, an N-type layer and a cover layer which are sequentially stacked on the substrate from bottom to top; wherein the P type layer comprises an InAs / GaInSb superlattice structure layer; the i long wave absorption layer comprises an InAs / GaInSb superlattice structure layer; and the N-type layer comprises an InAs / GaInSb superlattice structure layer. The epitaxial structure, the i long wave absorption layer, the P-type layer and the N-type layer all comprise the InAs / GaInSb superlattice structure layers, GaInSb ternary components in the superlattice structure layers have the advantages of long carrier life and high absorption coefficient, the performance of the infrared detector is improved, in addition, the InAs / GaInSb superlattice material is thinner in layer thickness reaching a specific cut-off wavelength, and the performance of the infrared detector is improved. And miniaturization of the infrared detector is facilitated.

This invention relates to an npn-type solar-blind ultraviolet detector using Ga2O3 as the light-absorbing layer and its fabrication method. The detector, from bottom to top, comprises a GaN substrate, a CuI hole transport layer, a Ga2O3 solar-blind ultraviolet absorption layer, a Ti electrode layer, and an Au electrode layer. An In electrode layer is disposed on one side of the CuI hole transport layer on the GaN substrate. This invention uses n-GaN, which has high electron mobility, good thermal stability, and a mature fabrication process, as the bottom substrate; p-CuI, with high hole concentration, high mobility, and excellent p-type conductivity, and good energy level matching with n-GaN and subsequent materials, as the hole transport layer; and n-Ga2O3, with an ultrawide bandgap, high chemical stability, and a high absorption coefficient for solar-blind ultraviolet light, as the light-absorbing layer. Combining the low contact resistance of the bottom In electrode with the high contact area of ​​the top Ti / Au interdigitated electrode improves carrier collection efficiency.

This invention provides a hybrid-pumped single-frequency fiber laser amplifier, comprising a single-frequency laser seed source, a core-same-band pump source, a cladding pump source, and a gain fiber. The core-same-band pump source employs a high-power fiber laser whose transition is in the same energy band as the signal light, which is doped with rare-earth ions in the gain fiber. Its output pump light is coupled to the core of the gain fiber and propagates within the core along with the signal light. The cladding pump source employs a fiber-coupled multimode semiconductor laser module whose emission wavelength matches the absorption peak of the gain fiber. Its output pump light is coupled to the cladding of the gain fiber for propagation. The core-same-band pump source and the cladding pump source are configured to simultaneously provide pump light to the same or multiple segments of the gain fiber to amplify the signal light in real time. The low quantum defect characteristic of the core-same-band pump reduces fiber thermal deposition, while the high-power injection of the cladding pump achieves synergistic suppression of stimulated Brillouin scattering and thermally induced mode instability.

The application discloses an application of a self-driven perovskite photoelectric detector in a visible light photosensitive chip. The self-driven perovskite photoelectric detector comprises electrodes, a first charge transport layer, a second charge transport layer and a perovskite layer; wherein the perovskite layer is a thin film in an interdigital structure formed by low-dimensional and three-dimensional perovskite, and the low-dimensional perovskite is any one or a combination of zero-dimensional, one-dimensional and two-dimensional; the first charge transport layer is one or a combination of a hole transport layer and an electron blocking layer, and the second charge transport layer is one or a combination of an electron transport layer and a hole blocking layer; or the first charge transport layer is one or a combination of an electron transport layer and a hole blocking layer, and the second charge transport layer is one or a combination of an electron transport layer or a hole blocking layer. The perovskite photoelectric detector solves the problem that the application of the existing silicon-based and perovskite visible light detectors is limited due to the insufficient visible light detection performance.

The application discloses a conjugated non-fullerene acceptor material with azaparacyclophanquinone as a core, and a structural general formula is shown as formula I: wherein R1 and R2 are C m H 2m+1 , m is greater than or equal to 1 and is an integer; and X is any one of H, F, Cl, Br and CN. The acceptor material has excellent performance, three-dimensional charge transport characteristics and good intermolecular stacking effect, and high electron mobility. When the material is applied to a binary organic photodetector, the material exhibits excellent near-infrared light detection performance, including high specific detectivity, high responsivity, fast response speed and low dark current density.

This invention relates to a transparent ceramic for magneto-optical components, comprising: a paramagnetic garnet-type composite oxide containing terbium, lutetium, and aluminum as shown in formula (1), and 100 ppm to 1000 ppm by mass of Si as a sintering aid. (Tb 1‑x Lu x )3Al5O 12 …(1), where 0.05≤x≤0.45. The magneto-optical element of the present invention is an optical isolator, which includes a transparent ceramic magneto-optical element as a Faraday rotor (110) and a polarizer (120) and an analyzer (130) before and after the Faraday rotor on the optical axis (102), and can be used in the wavelength range of 0.9 to 1.1 μm.

This utility model discloses a crushing device for aluminum ash clinker, belonging to the field of aluminum ash treatment technology. The crushing device for aluminum ash clinker includes a feeding frame and a crusher shell. A return frame is installed on one side of the middle of the crusher shell. An integrated dust collector is externally mounted with a guide fan, and the integrated dust collector is internally lined with centrifugal glass wool. This utility model solves the problems of existing aluminum ash crushing devices where aluminum ash that cannot be filtered through the filter holes is inconvenient to discharge, and the dust generated by the crushing device affects the working environment. In this utility model, the dust generated during crushing and conveying is firstly blocked by the integrated dust collector. The guide fan blows air into the air inlet channel, using wind power to pre-settle large dust particles to the bottom of the feed hopper, reducing the load on subsequent purification units. Clean water is pumped in by a water pump, and the water pipe and spray head spray the filter plate surface. The dust is prevented from flying due to the gravity of the water.

The invention discloses a composite ZnWO4 / BiOIO3 heterojunction photocatalyst, a preparation method and application, and belongs to the technical field of semiconductor photocatalytic materials. The invention provides a composite type ZnWO4 / BiOIO3 heterojunction photocatalyst, which is a heterojunction material formed by compounding ZnWO4 and BiOIO3, and a preparation method of the composite type ZnWO4 / BiOIO3 heterojunction photocatalyst. The preparation method comprises the following steps: weighing an aqueous solution of bismuth nitrate pentahydrate, adding potassium iodate under a continuous stirring condition, uniformly stirring, adding zinc tungstate, continuously stirring, carrying out a hydrothermal reaction, cooling to room temperature after the reaction is finished, washing, drying, and grinding to obtain the ZnWO4 / BiOIO3 heterojunction photocatalyst. The photocatalyst disclosed by the invention is high in degradation efficiency, strong in reusability, simple to operate, good in practicability and capable of effectively treating tetracycline pollutants in a water body.