5results about How to "High absorption coefficient" patented technology

This invention relates to an npn-type solar-blind ultraviolet detector using Ga2O3 as the light-absorbing layer and its fabrication method. The detector, from bottom to top, comprises a GaN substrate, a CuI hole transport layer, a Ga2O3 solar-blind ultraviolet absorption layer, a Ti electrode layer, and an Au electrode layer. An In electrode layer is disposed on one side of the CuI hole transport layer on the GaN substrate. This invention uses n-GaN, which has high electron mobility, good thermal stability, and a mature fabrication process, as the bottom substrate; p-CuI, with high hole concentration, high mobility, and excellent p-type conductivity, and good energy level matching with n-GaN and subsequent materials, as the hole transport layer; and n-Ga2O3, with an ultrawide bandgap, high chemical stability, and a high absorption coefficient for solar-blind ultraviolet light, as the light-absorbing layer. Combining the low contact resistance of the bottom In electrode with the high contact area of ​​the top Ti / Au interdigitated electrode improves carrier collection efficiency.

This invention provides a hybrid-pumped single-frequency fiber laser amplifier, comprising a single-frequency laser seed source, a core-same-band pump source, a cladding pump source, and a gain fiber. The core-same-band pump source employs a high-power fiber laser whose transition is in the same energy band as the signal light, which is doped with rare-earth ions in the gain fiber. Its output pump light is coupled to the core of the gain fiber and propagates within the core along with the signal light. The cladding pump source employs a fiber-coupled multimode semiconductor laser module whose emission wavelength matches the absorption peak of the gain fiber. Its output pump light is coupled to the cladding of the gain fiber for propagation. The core-same-band pump source and the cladding pump source are configured to simultaneously provide pump light to the same or multiple segments of the gain fiber to amplify the signal light in real time. The low quantum defect characteristic of the core-same-band pump reduces fiber thermal deposition, while the high-power injection of the cladding pump achieves synergistic suppression of stimulated Brillouin scattering and thermally induced mode instability.

The application discloses an application of a self-driven perovskite photoelectric detector in a visible light photosensitive chip. The self-driven perovskite photoelectric detector comprises electrodes, a first charge transport layer, a second charge transport layer and a perovskite layer; wherein the perovskite layer is a thin film in an interdigital structure formed by low-dimensional and three-dimensional perovskite, and the low-dimensional perovskite is any one or a combination of zero-dimensional, one-dimensional and two-dimensional; the first charge transport layer is one or a combination of a hole transport layer and an electron blocking layer, and the second charge transport layer is one or a combination of an electron transport layer and a hole blocking layer; or the first charge transport layer is one or a combination of an electron transport layer and a hole blocking layer, and the second charge transport layer is one or a combination of an electron transport layer or a hole blocking layer. The perovskite photoelectric detector solves the problem that the application of the existing silicon-based and perovskite visible light detectors is limited due to the insufficient visible light detection performance.

The application discloses a conjugated non-fullerene acceptor material with azaparacyclophanquinone as a core, and a structural general formula is shown as formula I: wherein R1 and R2 are C m H 2m+1 , m is greater than or equal to 1 and is an integer; and X is any one of H, F, Cl, Br and CN. The acceptor material has excellent performance, three-dimensional charge transport characteristics and good intermolecular stacking effect, and high electron mobility. When the material is applied to a binary organic photodetector, the material exhibits excellent near-infrared light detection performance, including high specific detectivity, high responsivity, fast response speed and low dark current density.

This invention relates to a transparent ceramic for magneto-optical components, comprising: a paramagnetic garnet-type composite oxide containing terbium, lutetium, and aluminum as shown in formula (1), and 100 ppm to 1000 ppm by mass of Si as a sintering aid. (Tb 1‑x Lu x )3Al5O 12 …(1), where 0.05≤x≤0.45. The magneto-optical element of the present invention is an optical isolator, which includes a transparent ceramic magneto-optical element as a Faraday rotor (110) and a polarizer (120) and an analyzer (130) before and after the Faraday rotor on the optical axis (102), and can be used in the wavelength range of 0.9 to 1.1 μm.