316results about How to "High absorption coefficient" patented technology

A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

The invention discloses a Cu-Zn-Sn-S compound semiconductor-film solar battery and a preparation method. The battery comprises a glass substrate, wherein a metal back electrode layer, a P-type Cu2ZnSnS4 (CZTS) absorption layer, an n-type CdS buffer layer and a transparent conducting oxide film window layer are sequentially deposited on the glass substrate. The method comprises special aftertreatment for the P-type Cu2ZnSnS4 absorption layer. The preparation method has the advantage of substituting CZTS for CIGS as the novel material of the absorption layer of the film solar battery. As the abundance of Zn and Sn in the CZTS in earth crust is 75 ppm and 2.2 ppm respectively, the solar battery has the advantages of rich resources, no toxic components and environmental friendliness, thereby becoming the novel film solar battery with the highest development potential, low cost and no pollution.

This invention relates to photosensitizer dyes for dye-sensitized solar cells. The photosensitizer dyes are porphyrin-based zinc complexes represented by the following general formulae (100) and (200).wherein A is represented by one of the following formulae (111)˜(118),wherein Z1˜Z10 independently represent a hydrogen atom (H), lithium (Li), sodium (Na), or tetra-alkyl ammonium group (as represented by the following general formula (120)),wherein X1˜X4 independently represent CmH2m+1 (m=1˜6), and B, C, D, and E independently represent one of the following formulae (131)˜(140),wherein Ra˜Rz are independently selected from the group consisting of H, CmH2m+1 (m=1˜15), OCpH2p+1 (p=1˜15), CH2[OC2H4]nOCH3 (n=1˜30), and [OC2H4]qOCH3 (q=1˜30).

Inclusions in a transparent panel (5) are detected by placing a light transmissive interface (3) in contact with the panel (5), and transmitting a beam of light (1) through interface (3) into panel (5). Within the panel (5), the light beam (7) propagates along a path including total internal reflections at surfaces of panel (5). When the light beam (1) intercepts inclusions (10) or other defects at least some of it is scattered, and leaves the panel (5). This scattered light is then observed. Thus, a large zone of the panel (5) can be inspected, with light only being detected in the case that it arises from scattering by inclusions or other defects.

A laser-based method and system for selectively processing a multi-material device having a target link structure formed on a substrate while avoiding undesirable change to an adjacent link structure also formed on the substrate are disclosed. The method includes applying at least one focused laser pulse having a wavelength into a spot. The at least one focused laser pulse has an energy density over the spot sufficient to completely process the target link structure while avoiding undesirable change to the adjacent link structure, the substrate and any layers between the substrate and the link structures. The target link structure and the adjacent structure may have a pitch of about 2.0 microns or less.

The invention discloses an aluminum gallium nitrogen-based solar blind ultraviolet detector and a production method thereof. The aluminum gallium nitrogen-based solar blind ultraviolet detector comprises a sapphire substrate, an A1N nucleating layer, an A1<x1>Ga<1-x1>N buffer layer, an n-type A1<x2>Ga<1-x2>N layer, an undoped i-type A1<x3>Ga<1-x3>N absorbing layer, an n-type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, an undoped i-type A1<x6>Ga<1-x6>N multiplication layer, a p-type A1<x7>Ga<1-x7>N layer and a p-type GaN layer which are sequentially arranged from the bottom up. An n-type ohmic electrode leads from the n type A1<x2>Ga<1-x2>N layer, and a p type ohmic electrode leads from the p type GaN layer. According to the arrangement, the absorbing layer and the multiplication layer are separated by the multi-cycle n type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, the electric field of the multiplication layer is increased, thus allowing uniform avalanche multiplication to occur under the high electric field, and avalanche multiplication factors of the solar blind ultraviolet detector are increased.

The invention discloses a gradient doped silicon-based heterojunction solar cell and a preparation method thereof. A plurality of layers of amorphous silicon membranes of which the doped concentration is increased sequentially are deposited on the surface of crystalline silicon serving as a substrate, and a transparent conductive film with a certain thickness is deposited and an electrode is prepared to prepare the gradient doped silicon-based heterojunction solar cell, wherein the amorphous silicon membranes contact the crystalline silicon to achieve a good passivating effect and obtain highopen-circuit voltage; a plurality of gradient doped amorphous silicon layers can form a strong inner electric field to reduce the composite loss of photo-induced carriers, improve the collection rateof minority carriers and increase short-circuit current; and the doped concentration of the doped amorphous silicon layers contacting the electrode is high, the resistivity is low, and contact resistance between the doped amorphous silicon layers and the electrode can be reduced to improve filling factors of the solar cell. Therefore compared with the conventional silicon-based heterojunction solar cell, the gradient doped silicon-based heterojunction solar cell has high photoelectric conversion efficiency.

The invention discloses a formaldehyde detection probe compound and a detection method. The compound is a high fluorescence quantum efficiency fluorescence dye based on dipyrrol borane BODIPY. The compound and alkali substances used in the invention generate a reversible reaction for forming a compound. The detection of formaldehyde is based on alkali reaction in the compound, and the reaction result causes the BODIPY to regenerate and develop colors, and simultaneously recover fluorescence. The detection method is a novel detection reagent which can be recycled. On the other hand, based on the high fluorescence quantum efficiency characteristics of the BODIPY compounds, the detection reagent has high sensitivity and lower detection limit.

The invention discloses a GeSn-GeSi material based heterogeneous phototransistor and a fabrication method thereof. A collector and an emitter of the transistor both adopt a GeSi material, a light absorption region and a base region both adopt a GeSn material, an emitter region, the base region, the light absorption region and a collector region are sequentially and vertically arranged, and a passivation layer encircles the peripheries of the emitter region, the base region, the light absorption region and the collector region. According to the fabrication method of the transistor, the GeSn material is grown by a low-temperature solid-source molecular beam epitaxial process, and the fabrication method is a standard complementary metal oxide semiconductor (CMOS) fabrication method. The GeSn material with a high light absorption coefficient forms heterojunctions in the light absorption region, the GeSi emitter region and the collector region, the light sensitivity and light current during detection of an infrared light signal by the transistor are improved, and the GeSn-GeSi material based heterogeneous phototransistor has high light absorption rate.

The invention discloses a method for manufacturing a black silicon material by utilizing the scanning of two laser light sources with the respective wavelengths of 1064nm and 532nm, which comprises the following steps: 1. placing a silicon sheet in a sulfur series substance environment; 2. sequentially scanning and irradiating the surface of the silicon sheet by utilizing the two laser light sources which are focused through a lens and respectively have the wavelengths of 1064nm and 532nm to form the microstructural black silicon material containing silicon microcones, silicon particulates and silicon microholes. The invention simultaneously integrates the characteristics that the action depth of the long-wave light source is deep and the action depth of the short-wave light source is shallow into the manufacture of the black silicon material and expands the ranges of a sulfur series doping substance, the silicon microcones, the silicon particulates and the silicon microholes on a surface layer, so that incident light can be more fully absorbed, and the absorption coefficient of the total solar spectrum is increased to more than 90 percent.

A photosensitizer dye is provided. The photosensitizer dye contains a Ru complex represented by the following formula (1):wherein Y1 and Y2 independently represent hydrogen atom (H), lithium (Li), sodium (Na) or tetra-alkyl ammonium groups (as represented by the following general formula (2)).wherein A, B, C and D independently represents CmH2m+1 (m=1˜6).Wherein X1 represents one of the following formulas (3)˜(8) and X2 represents H or a group the same as X1,

A photosensitizer dye is provided. The photosensitizer dye contains a Ru complex represented by the following formula (1):wherein Y1 and Y2 independently represents hydrogen atom (H), lithium (Li), sodium (Na) or tetra-alkyl ammonium groups (as represented by the following general formula (2)). Formula (2):wherein A, B, C and D independently represents CmH2m+1 (m=1˜6).Wherein X1 represents one of the following formulas (3)˜(8) and X2 represents H or a group the same as X1,

The invention discloses an ultraviolet and infrared double-color detector and a manufacturing method thereof. The ultraviolet and infrared double-color detector comprises a substrate, a buffer layer, a first n-type ohmic contact layer, a multicycle layer, a second n-type ohmic contact layer, an intrinsic layer, a transparent electrode, an upper electrode, a middle electrode and a lower electrode, wherein a material structure for the ultraviolet and infrared double-color detector is grown on the substrate; the buffer layer is grown on the substrate; the first n-type ohmic contact layer is grown on the buffer layer for ohmic contact; the multicycle layer is comprised of a first intrinsic layer and a heavily-doped n-type layer, which are grown alternately; the second n-type ohmic contact layer is grown on the multicycle layer and part of the second n-type ohmic contact layer serves as a n-type ohmic contact electrode; the intrinsic layer has a forbidden band width of Eg3 which is less than or equal to Eg2 and is grown on the second n-type ohmic contact layer; the transparent electrode is formed on the intrinsic layer having the forbidden band width of Eg3; the upper electrode is formed in a small area on the transparent electrode; the middle electrode is formed in the electrode window of the second n-type ohmic contact layer; and the lower electrode is formed in the electrode window of the first second n-type ohmic contact layer.

Belonging to the technical field of optoelectronic devices, the invention discloses an electron transport layer material and a perovskite solar cell. The perovskite solar cell comprises an anode, a hole transport layer, an optical active layer, an electron transport layer and a cathode. The optical active layer is made of a solution processable organic-inorganic hybrid battery material with a perovskite structure, and the electron transport layer has a structure shown as the specification. According to the invention, a conjugated polymer containing a strong polar group is applied in the electron transport layer material of the perovskite solar cell to replace PCBM, TiO2 or others, and the device making cost can be lowered. Also, the side chain polymer of the contained strong polar group plays a significant cathodic interface modification role, and improves the carrier transport ability, thereby acquiring good device performance.

The invention relates to a titanium dioxide / polyaniline photocatalyst with a 3D pattern structure and a preparation method of the titanium dioxide / polyaniline photocatalyst. The preparation method comprises the steps of dispersing carbon balls in absolute ethyl alcohol, adding TBOT, dropping distilled water, centrifugally separating, and drying to obtain brown powder; calcining the brown powder to obtain hollow titanium dioxide nanometer particles, dispersing the hollow titanium dioxide nanometer particles in the absolute ethyl alcohol, dispersing ANI (aniline) in hydrochloric acid, agitating in an ice-water bath to obtain a deep green suspension; and centrifugally separating, and drying to obtain a deep green TiO2 / polyaniline (PANI) compound photocatalyst. Polyaniline is used as a sensitizer for modifying titanium dioxide, the operation is simple, reaction conditions are mild and the cost is low. Light is repeatedly refracted and absorbed by using polyaniline nanometer sheets which are mutually meshed, and thus full utilization on solar light is realized, the specific surface area of a composite material can be increased by the polyaniline nanometer sheets, more active sites are provided for light-catalyzed reaction, the light energy conversion efficiency and the photo-catalysis efficiency are improved, the PANI is high in absorption coefficient in a visible light region, and azo-dyes, namely MO and CR, can be directly degraded by using solar light.

The invention discloses an ultraviolet and infrared double-color detector based on zinc oxide materials and a manufacturing method thereof and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a substrate (10), a buffer layer (11), a first n-type ohmic electrode contact layer (12), an infrared sensitive layer, a second n-type ohmic electrode contact layer (16), an ultraviolet sensitive layer (17) and a transparent electrode layer (19) which is arranged above the ultraviolet sensitive layer, wherein the buffer layer (11), the first n-type ohmic electrode contact layer (12), the infrared sensitive layer, the second n-type ohmic electrode contact layer (16), the ultraviolet sensitive layer (17) and the transparent electrode layer (19) are sequentially arranged on the substrate (10) in a growth mode. A bottom electrode (22), a middle electrode (21) and a top electrode (20) are arranged on the first n-type ohmic electrode contact layer (12), the second n-type ohmic electrode contact layer (16) and the transparent electrode layer (19) respectively. A three-electrode structure is adopted by the detector, namely, the middle electrode in the three-electrode structure serves as a common electrode of ultraviolet and infrared detection, an upper electrode and a lower electrode respectively serve as the other electrode of the ultraviolet and infrared detection, and the detector achieves the aim of simultaneously detecting ultraviolet radiation and infrared radiation.

The invention relates to the field of a dye-sensitized solar cell photoanode active membrane manufacturing technology, and in particular relates to a dye-sensitized solar cell photoanode active membrane and a preparation method of the active membrane, aiming at solving the problems that the dye-sensitized solar cell photoanode active membrane prepared by the existing method is lower in mutual penetration degree among the stacked active substances, lower in compatibility and low in exciton separation efficiency, and an electronic transmission channel is not smooth enough. The invention provides the preparation method of the dye-sensitized solar cell photoanode active membrane; the excellent characteristics of electric conduction and adsorption of a carbon nano tube are utilized, a transparent conductive substrate is organically combined with a titanium dioxide active layer by the carbon nano tube, and the carbon nano tube has the functions of optimizing the electrochemical performance of the surface of a transparent conductive film and improving the dispersity and the light absorption intensity of the titanium dioxide.

A light-sensitive coloring agent as a ruthenium metal complex which is shown as the formula (1).

The invention relates to a double clad all-solid-state photonic crystal fiber and a preparation method thereof. The double clad all-solid-state photonic crystal fiber comprises a fiber core, an inner cladding and an outer cladding. The optical fiber is provided with the outer cladding of which the outer surface is of a round shape. The inner cladding is of a hexagon shape with a sawtooth structure. The preparation method of the double clad all-solid-state photonic crystal fiber comprises the following steps of: using a metal sleeve with an internal hexagon structure as a die; preparing a photonic crystal fiber per-form rod by a stacking method; replacing cladding air holes with glass with low refractive index, so that the making process and the fusion welding of the optical fiber are more simple and convenient; and forming the optical fiber, of which the outer surface is round and the inner cladding is of the hexagon shape with the sawtooth structure by utilizing the surface tension of the glass in the wire drawing process. A pumping light adsorption coefficient of the optical fiber is improved. The coupling efficiency and the pumping light adsorption coefficient are effectively improved. Compared with a double-layer optical fiber with a conventional structure, the output laser power and efficiency are improved by over twice.

The invention discloses a novel gallium-oxide(Ga2O3)-based-PIN structure-included ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is composed of a substrate (101), a buffer layer (102), an n type Ga2O3 layer (103), and an non-doped i type NiO / TiO2 superlattice absorber layer (104), a p type Ga2O3 layer (105), an n type ohmic electrode (107) led out at the n type Ga2O3 layer (103), and a p type ohmic electrode (106) led out at the p type Ga2O3 layer (105) that are arranged successively from bottom to top. According to the invention, with the multi-period non-doped i type NiO / TiO2 superlattice as the absorption layer, a problem that the ultraviolet detector is insensitive because of the similar ionization coefficients of the electron and hole in the ultraviolet photoelectric detector is solved; and the responsivity and stability of the detector to the UV signal are improved. The ultraviolet photoelectric detector having advantages of novel structure and high sensitivity is suitable for deep ultraviolet detection.

The invention discloses a GaN-based ultraviolet avalanche photo-detector. The GaN-based ultraviolet avalanche photo-detector is formed by arranging a sapphire substrate, a low-temperature nucleation layer, an n-type Al component gradient AlxInyGa1-x-yN layer, an Alx1Iny1Ga1-x1-y1N / Alx2Iny2Ga1-x2-y2N multi-quantum well structure absorption region, an Al component gradient Alx3Iny3Ga1-x3-y3N layer and an Alx4Iny4Ga1-x4-y4N / Alx5Iny5Ga1-x5-y5N multi-quantum well structure multiplication region in sequence from bottom to top. As a multi-quantum well has the advantages of high absorption coefficients, high transverse carrier mobility, strong polarization effects and the like, the absorption region and the multiplication region of the GaN-based ultraviolet avalanche photo-detector are designed to be of a multi-quantum well structure. In this way, the quantum efficiency and responsivity of the GaN-based ultraviolet avalanche photo-detector can be enhanced, the cut-off wavelength of the photo-detector can be freely tuned, and meanwhile the threshold value of avalanche breakdown voltage can be effectively reduced. Accordingly, important significance is achieved for manufacturing the high-performance ultraviolet photo-detector.

The invention discloses an interdigital ultraviolet enhanced selective silicon photoelectric diode and a manufacture method thereof. The photoelectric diode comprises a P-type substrate, wherein an n well is disposed on the P-type substrate; photosensitive windows on the n well are interdigital or in an array arrangement of interdigital structure; the doping type of the interdigital structure is n-type and p-type alternatively. In the invention, the array arrangement of the interdigital structure is used, the depletion layer area of the diode is increased, and the absorption coefficient of ultrasonic lights is improved, so that the performances of the ultrasonic silicon selective photoelectric diode in the aspects of responsiveness and quantum efficiency are greatly improved; and the diode has wide application prospects in ultrasonic detectors.

The invention relates to a solar cell, in particular to a nanowire solar cell which has a heterojunction radial structure and is formed by monocrystalline silicon, nanometer silicon and aluminum oxide. The cell structure is a cell structure of n-type monocrystalline silicon / p-type nanometer silicon / aluminum oxide or n-type monocrystalline silicon / i-type nanometer silicon / p-type nanometer silicon / aluminum oxide. In the nanowire solar cell, a monocrystalline silicon (c-Si) nanowire is prepared on a n-type monocrystalline silicon substrate by a wet etching process, and hydrogenated i-type and p-type nanometer silicon (nc-Si:H) membranes are prepared on a monocrystalline nanowire by a plasma enhanced chemical vapor deposition (PECVD) method to form a radial structure of c-Si(n) / nc-Si:H(p) orc-Si(n) / nc-Si:H(i) / nc-Si:H(p) from inside to outside; an Al2O3 layer is prepared by an atomic layer deposition (ALD) technology, and an aluminum-doped zinc oxide layer is prepared by the ALD technology; and finally, an aluminum electrode is subjected to vacuum evaporation on the reverse side of the n-type monocrystalline silicon, and is annealed quickly to prepare the silicon-based nanowire solarcell. By the preparation method, the high-efficiency silica-based nanowire solar cell can be prepared, and low-quality monocrystalline silicon materials can be utilized, so the cost of the cell can be reduced.

The invention relates to a method for detecting cysteine content in real time by a colorimetric method. The method comprises the following steps of: preparing a color developing agent and preparing cysteine standard solution; adding 1.0mL of the color developing agent standard solution with a diluted concentration of 1.0*10<-6>mol / L, 1.0mL of 0.01mol / L NaCl solution, 1.0mL of 0.01mol / L sodium dodecyl sulfate, 1.0mL of mixed phosphate buffer solution with a pH value of 7.5 and 1mL of a sample to be detected into a 10mL volumetric flask in turn; fixing the volume and shaking uniformly; and taking a reagent blank as reference, measuring the absorbency A of the solution at a 646-nm wavelength by using a 1-cm cuvette, recording the absorbency difference delta A, and calculating the cysteine content of the sample to be detected. The method has the advantages of simple operation, high response speed, high selectivity, high sensitivity and the like, and can be quickly and accurately applied to the quantitative measurement of cysteine concentration in synthetic samples and biological samples.

The invention discloses a band gap tunable copper zinc tin sulfur semiconductor film and a preparation method thereof. The chemical formula of the semiconductor film is CuaZnbSncS4, wherein 1<= a<=3, 0.3<=b<= 2, 0.2<=c<=2. The preparation method comprises the steps of adding high purity metals of copper, zinc and tin to different tungsten boats and molybdenum boat, acquiring a lamellar metal film precursor through vacuum thermal evaporation, and vulcanizing the precursor in vacuum to obtain the band gap tunable copper zinc tin sulfur semiconductor film. Adjustments of components and optical properties are achieved and high-quality copper zinc tin sulfur semiconductor film is obtained by changes of evaporation order, mass ratio or mole ratio. The chemical formula of the semiconductor film has the advantages of being simple in device requirements, low in cost, environment friendly and pollution-free, suitable for industrial production and capable of being produced in a large scale and controlling band gaps.

An organic dye, its production and use are disclosed. In the structural formula, R is substituted group with IIor III structure. The process is carried out by inducing thiofuran or thiophthene conjugated system connected with double bond as electronic relay and synthesizing organic dye with carboxyl group and electronic feeder-electronic relay-electronic receptor structure. It's simple and cheap and has excellent light absorption utilization rate.