GaN-based ultraviolet avalanche photo-detector
A photodetector and ultraviolet avalanche technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of difficult tuning of device cut-off wavelength, and achieve high lateral carrier mobility, high absorption coefficient, and strong polarization effect Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0021] The present invention will be further described below in conjunction with the accompanying drawings.
[0022] like figure 1 Shown is a gallium nitride-based ultraviolet avalanche photodetector, including a sapphire substrate 101, a low-temperature nucleation layer 102, and an n-type Al composition graded Al x In y Ga 1-x-y N layer 103, Al x1 In y1 Ga 1-x1-y1 N / Al x2 In y2 Ga 1-x2-y2 N multi-quantum well structure absorption region 104, Al composition graded Al x3 In y3 Ga 1-x3-y3 N layer 105 and Al x4 In y4 Ga 1-x4-y4 N / Al x5 In y5 Ga 1-x5-y5 N multiple quantum well structure multiplication region 106, where Al x1 In y1 Ga 1-x1-y1 N / Al x2 In y2 Ga 1-x2-y2 N multi-quantum well structure absorption region 104 and Al x4 In y4 Ga 1-x4-y4 N / Al x5 In y5 Ga 1-x5-y5 The multiplication region 106 of the N multiquantum well structure serves as the absorption region and the multiplication region of the gallium nitride-based ultraviolet avalanche photode...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com