Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof

A technology of solar cells and silicon nanowires, applied in the field of solar cells, can solve problems such as high surface recombination rate, poor nanowire cells, and low efficiency, and achieve the effects of reducing battery costs, high absorption coefficient, and improving absorption

Active Publication Date: 2011-08-17
南通东湖国际商务服务有限公司
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Generally speaking, using low-quality silicon materials to make radial silicon nanowire solar cells is beneficial to improve light absorption, improve cell efficiency, and reduce cell material costs, but At present, the research on Si-based nanowire solar cells is still in the laboratory stage, and the efficiency is low, about 5%. Most of the research is to form nanowires on the silicon substrate by various methods, and then form a pn cell structure by diffusion ; or outside the silicon nanowires, the vapor phase chemical deposition method is used to prepare an amorphous silicon film to form a pin cell structure. Although the radial p-n junction is beneficial to the collection of carriers and is theoretically expected to have a higher conversion efficiency, High surface recombination rate and poor electrode contact contribute to low efficiency of nanowire batteries

Method used

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  • Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof
  • Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof
  • Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof

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example 1

[0041] 1. The structure of monocrystalline silicon / nano-silicon / heterogeneous radial np structure nanowire solar cell see figure 1 ;

[0042] 2. Preparation of solar cells

[0043] 1. Preparation of single crystal silicon nanowires:

[0044] A (100) doped n-type silicon wafer was selected, with a resistivity of 2 Ωcm and a thickness of 200 μm; the n-type (100) silicon wafer was immersed in acetone and ethanol in sequence and ultrasonically cleaned for 10 min to remove organic impurities on the surface, and used to remove Wash with deionized water; then immerse in a mixed solution of sulfuric acid and hydrogen peroxide for 10 min, then wash with deionized water; then immerse the cleaned silicon wafer in HF (4.8 M) and AgNO 3 (10 mM) mixed aqueous solution, stirred slowly, deposited silver particles, and immersed the silicon wafer covered with silver particles in HF (4.8 M) and H 2 o 2 (0.45 M) after corrosion in a mixed aqueous solution for 10 min., the samples were washed...

example 2

[0057] 1. The structure of nano-silicon / single crystal silicon heterogeneous radial pin structure nanowire solar cell see figure 2 ;

[0058] 2. Preparation of solar cells

[0059] 1. Preparation of single crystal silicon nanowires:

[0060] Select (100) doped n-type silicon wafer with a resistivity of 2 Ωcm and a thickness of 200 μm, and prepare the same as step 1 in Example 1.

[0061] 2. Using PECVD to grow a 20 nm thick intrinsic nano-silicon layer on the silicon nanowire

[0062] Growth conditions: silane with hydrogen dilution ratio of 95%, growth temperature of 250 o C; Silane flow rate 10 sccm,

[0063] The hydrogen flow rate is 40 sccm, and the radio frequency power is 80 W.

[0064] 3. Use PECV to grow a 5nm p-type nano-silicon layer

[0065] Growth conditions: Silane at a hydrogen dilution ratio of 95%, the dilution ratio of borane [PH 3 ] / [PH 3 + H 2 ] is 0.5

[0066] %. Growth temperature 250 o C, silane flow rate 10 sccm, borane flow rate 2 sccm, hyd...

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Abstract

The invention relates to a solar cell, in particular to a nanowire solar cell which has a heterojunction radial structure and is formed by monocrystalline silicon, nanometer silicon and aluminum oxide. The cell structure is a cell structure of n-type monocrystalline silicon / p-type nanometer silicon / aluminum oxide or n-type monocrystalline silicon / i-type nanometer silicon / p-type nanometer silicon / aluminum oxide. In the nanowire solar cell, a monocrystalline silicon (c-Si) nanowire is prepared on a n-type monocrystalline silicon substrate by a wet etching process, and hydrogenated i-type and p-type nanometer silicon (nc-Si:H) membranes are prepared on a monocrystalline nanowire by a plasma enhanced chemical vapor deposition (PECVD) method to form a radial structure of c-Si(n) / nc-Si:H(p) orc-Si(n) / nc-Si:H(i) / nc-Si:H(p) from inside to outside; an Al2O3 layer is prepared by an atomic layer deposition (ALD) technology, and an aluminum-doped zinc oxide layer is prepared by the ALD technology; and finally, an aluminum electrode is subjected to vacuum evaporation on the reverse side of the n-type monocrystalline silicon, and is annealed quickly to prepare the silicon-based nanowire solarcell. By the preparation method, the high-efficiency silica-based nanowire solar cell can be prepared, and low-quality monocrystalline silicon materials can be utilized, so the cost of the cell can be reduced.

Description

technical field [0001] The invention relates to a solar cell, in particular to a heterojunction radial structure nanowire solar cell formed by using monocrystalline silicon, nano-silicon and alumina, and the cell structure is n-type monocrystalline silicon / p-type nano-silicon / alumina or n-type Cell structure of monocrystalline silicon / i-type nano-silicon / p-type nano-silicon / alumina. Background technique [0002] Silicon solar cells occupy a dominant position in the commercial solar cell market due to abundant silicon raw materials, mature technology, stable performance, and less environmental pollution; at present, various anti-reflection coatings and silicon surface texturing technologies are used to improve the optical properties of cells It is still an important way to improve the performance of solar cells; in addition, various new nanostructures that have emerged in the field of microelectronics in the past decade are expected to realize the first generation of solar ce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0224H01L31/18C23C16/44C23C16/24C23C16/40
CPCY02P70/50
Inventor 袁宁一丁建宁
Owner 南通东湖国际商务服务有限公司
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