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92results about How to "Strong light absorption" patented technology

Composite shape-stabilized phase change material with light absorption and conductive properties and preparation method thereof

The invention provides a composite shape-stabilized phase change material with light absorption and conductive properties and a preparation method thereof. The material consists of 5-15 percent of porous carbon material and 85-95 percent of organic phase change material distributed in the porous carbon material, wherein the organic phase change material is distributed in the porous carbon material. The method comprises the following steps of: preparing a carbon material with the three-dimensional communicating porous property; heating and fusing the organic phase change material and casting the organic phase change material on the porous carbon material; shocking the mixture at the temperature of 100-120 DEG C for a certain time so as to uniformly distribute the organic phase change material in the porous carbon material; and grinding the mixture at room temperature, and pressing and forming the material in a die. The composite shape-stabilized phase change material has high heat conduction, light absorption and conductivity; the heat transfer efficiency of the phase change material can be obviously improved; and meanwhile, the solar energy and electric energy can be converted into heat energy at high efficiency and are stored in the phase change material, and the material is a photoelectric composite shape-stabilized phase change material.
Owner:PEKING UNIV

Preparation method and applications of graphene sheet vertically oriented thin film material

The invention relates to a preparation method and applications of a graphene sheet vertically oriented thin film material, and belongs to the field of functional materials. According to the preparation method, a graphene oxide solution obtained via pre-production is uniformly mixed with an antifreezing agent; an obtained mixture is delivered into a polytetrafluoroethylene container, and then the bottom of the polytetrafluoroethylene container is placed on the surface of liquid nitrogen immediately so as to realize orientation freezing from bottom to top and obtain a hydrogel of the graphene sheet vertically oriented thin film material; the hydrogel is subjected to freeze drying so as to obtain an aerogel of the graphene sheet vertically oriented thin film material; under argon protection, the aerogel is subjected to annealing so as to obtain the graphene sheet vertically oriented thin film material. The preparation method is simple; operation is convenient; the preparation method is suitable for large-scale production; the obtained graphene sheet vertically oriented thin film material possesses highly ordered channels beneficial for water molecule transmission and evaporation; and the graphene sheet vertically oriented thin film material can be used for realizing high efficiency solar energy seawater desalination, and water cleaning of concentrated acid, concentrated alkaline, and heavy metal solution.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Room temperature nitrogen dioxide sensor preparation method based on reduced graphene-semiconductor

The present invention relates to a room temperature nitrogen dioxide sensor preparation method based on a reduced graphene-semiconductor. The preparation method comprises: adding graphite and NaNO3 into H2SO4, adding KMnO4, carrying out a reaction in a constant temperature water bath pot, adding deionized water, terminating the reaction, adding a H2O2 solution and hydrochloric acid to obtain an oxidized graphene suspension, dissolving inorganic salt powder in deionized water, adding the obtained solution to the oxidized graphene suspension, drying in a high pressure kettle to obtain corresponding powder, preparing an interdigital electrode and a wiring terminal on the front surface of a substrate by using a monocrystal silicon wafer Si as an insulating substrate, and preparing a reduced graphene-semiconductor composite coating just above the interdigital electrode. According to the present invention, the defects of sensor power consumption increasing, sensor service lifer shortening, detection safety risk increasing and the like in the prior art are overcome with the preparation method of the present invention; and the characteristics of large specific surface area, fast electron transport, good light absorption, fast response, fast recovery and lower working temperature of the reduced graphene are utilized.
Owner:YANGZHOU UNIV

Preparation method of ultra-black coating with nano-pore structure

The invention discloses a preparation method of an ultra-black coating with a nano-pore structure. The preparation method comprises the following steps of: cleaning and activating a metal matrix material, plating the cleaned and activated metal matrix material in a chemical plating solution to deposit a nickel phosphorus carbon alloy coating on the metal matrix material, wherein the chemical plating solution comprises nickel sulfate, sodium hypophosphite, a buffer agent, a complexing agent and a carbon black, and the particle size of the carbon black is 20-60mm, and chemically etching the nickel phosphorus carbon alloy coating on the surface of the metal matrix material using an etching acid solution. A plurality of nanometer conical pores different in sizes are uniformly distributed in the surface of the ultra-black coating prepared by the preparation method, nano-pores which are smaller in pore diameters are filled in the inner surfaces of the nanometer conical pores and in the plane areas between the adjacent conical pores, the light reflectivity of the ultra-black coating within a 400-2000 light wavelength range is less than 0.12%, and the ultra-black coating has light absorption performance better than that of the light absorbing coating obtained by carrying out conventional chemical etching on a Ni-P alloy.
Owner:SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING

Hybrid material based on macrocyclic compound photosensitive dye and titanium dioxide and preparation method thereof, and application of hybrid material to photocatalysis

The invention discloses a hybrid material based on a macrocyclic compound photosensitive dye and titanium dioxide and a preparation method thereof, and application of the hybrid material to photocatalysis. The hybrid material comprises the macrocyclic compound photosensitive dye and titanium dioxide, wherein the macrocyclic compound photosensitive dye is a calixarene compound or porphyrin compound. The invention also discloses the preparation method for the hybrid material based on the macrocyclic compound photosensitive dye and titanium dioxide, and application of the hybrid material to photocatalysis. The organic-inorganic hybrid material prepared from the macrocyclic compound photosensitive dye and titanium dioxide has a hierarchical porous structure, and can improve the free diffusionof gas and surface adsorption of CO2, increase the adsorption quantity and activation degree of reactants, reduce the possibility of electron-hole recombination and effectively enhance photocatalysisefficiency. Moreover, the hybrid material of the invention has high stability and is improved in cyclic utilization stability in photocatalysis.
Owner:SUN YAT SEN UNIV

Preparation method for copper/cuprous oxide cladded paraffin microcapsule photothermal conversion phase-change energy-storage composite material

The invention discloses a preparation method for a copper/cuprous oxide cladded paraffin microcapsule photothermal conversion phase-change energy-storage composite material by a hydrothermal method, wherein the preparation method comprises the steps: mixing sliced paraffin and oil amine, and stirring evenly at the temperature of 65-85 DEG C to obtain a paraffin-oil amine mixture; dissolving a reducing agent glucose and a copper source in deionized water, and mixing evenly and dropwise adding into the paraffin-oil amine mixture, and under a condition of the temperature of 65-85 DEG C, stirringevenly to obtain a reaction mixture; and placing the obtained reaction mixture in a high pressure reaction kettle, carrying out a reaction for 6-24 h at the temperature of 120-150 DEG C, centrifugingthe obtained reaction liquid, washing with deionized water, drying for 12 h at the temperature of 50 DEG C, and thus obtaining copper/cuprous oxide cladded paraffin microcapsule photothermal conversion phase-change energy-storage microcapsules. The preparation method is simple and low in cost; paraffin is cladded by copper with high thermal conductivity coefficient and cuprous oxide with high light absorbability; the prepared microcapsules have a uniform particle size less than 3 microns, and have good thermal conductivity and excellent light absorbability.
Owner:ZHEJIANG UNIV OF TECH

Niobium-doped bismuth oxybromide catalyst and preparation method and use method thereof

PendingCN111744505AGood photocatalytic degradation of organic matter under visible lightLarge specific surface areaPhysical/chemical process catalystsWater/sewage treatment by irradiationBismuth oxybromidePtru catalyst
The invention provides a niobium-doped bismuth oxybromide catalyst and a preparation method and a use method thereof. The preparation method comprises the following steps: 1, heating an alcohol solvent until the alcohol solvent is boiled, and naturally cooling, 2, sequentially adding a bismuth salt compound, a niobium compound and a bromine compound, mixing and fully stirring, 3, adding a neutralsolution, 4, carrying out high-pressure constant-temperature reaction, and 5, cooling to room temperature, carrying out centrifugal separation, respectively washing with water and an ethanol solution,drying, and collecting the powder to obtain the flower-ball-shaped niobium-doped bismuth oxybromide. The photocatalyst prepared by the preparation method disclosed by the invention is Nb-BiOBr, the photocatalyst has good visible light photocatalytic degradation organic matter performance, higher photocatalytic activity and photo-induced electron hole separation efficiency, the degradation efficiency of the photocatalyst is 6.4 times that of BiOBr in the prior art, and the photocatalyst is environmentally friendly, harmless, low in price, controllable in method and easy to operate and has wideapplication prospects in the field of environmental pollution and governance.
Owner:DALIAN POLYTECHNIC UNIVERSITY

High-temperature-resistant light absorption coating and preparation method thereof

ActiveCN113881337AWith micro-nano structureWith micro-nano porous morphologyFireproof paintsRadiation-absorbing paintsOrganic solventNano carbon
The invention discloses a preparation method of a high-temperature-resistant light absorption coating. The preparation method comprises the following steps: (1) dispersing a nano carbon material, a surface modifier, a matting material, aromatic diamine and aromatic dianhydride in an organic solvent to prepare a composite suspension; (2) carrying out surface roughening treatment after the substrate is cleaned; and (3) depositing the composite suspension liquid obtained in the step (1) on the substrate treated in the step (2) in an aerial fog spraying or brushing manner, and heating and curing to obtain the high-temperature-resistant light absorption coating. According to the invention, by adjusting the types and proportions of the components in the composite suspension and combining with adaptive spraying process parameters, the components in the suspension can have a synergistic effect, so that the coating has a micro-nano porous structure and also has good mechanical properties. The high-temperature-resistant light absorption coating prepared by the method is good in binding force with a substrate and excellent in light absorption performance, and has a wide application prospect in the fields of optics, navigation and the like.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +1

Photocatalytic material and preparation method and application thereof

The invention provides a photocatalytic material and a preparation method and application thereof. According to the photocatalytic material, nano titanium oxide covers a gold nano rod to form a core-shell structure; the nano titanium oxide is chemically bonded with modifying molecules on the surface of the gold nano rod to cover the surface of the gold nano rod. According to the photocatalytic material, organic molecules containing sulfydryl and carboxyl modify the whole surface of the gold nano rod, to prepare nano titanium oxide; under the mutual action between a modifying molecule group on the surface of the gold nano rod and a surface group of the nano titanium oxide, the nano titanium oxide covers the gold nano rod, to obtain the photocatalytic material with the core-shell structure. The thickness of the coverage layer of the nano titanium oxide in the photocatalytic material with the core-shell structure is adjustable, so that the structure is stable and the light absorption performance is excellent; furthermore, the preparation method is simple, the reaction conditions are mild, and environment friendliness is realized; the photocatalytic material is expected to be applied to various aspects such as photocatalysis, solar batteries, and photoelectric conversion, and has a wide application prospect.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

Field effect transistor photoelectric detector based on dielectric layer response

The invention belongs to the field of photoelectric detectors, and particularly discloses a field effect transistor photoelectric detector based on dielectric layer response, which comprises a grid electrode, a photoelectric response composite dielectric layer, a carrier transport layer, a source electrode and a drain electrode. The composite dielectric layer is formed by compounding a photoelectric response medium and a charge blocking insulating medium; the carrier transmission layer is used for transmitting electrons or holes, the photoelectric response medium is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating medium is used for limiting passing of the electrons, the holes and the excitons; the generation of photo-induced electrons, holes or excitons in the composite dielectric layer and the movement of the photo-induced electrons, holes or excitons limited in the photoelectric response medium cause the change of the effective dielectric constant of the composite dielectric layer and cause the change of the carrier concentration and conductivity of the carrier transport layer, and photoelectric detection is realized according to the change of the current between the source electrode and the drain electrode before and after illumination. According to the invention, the design flexibility of the photoelectric detector is obviously improved, and the photoelectric detector with high performance and low cost can be further realized.
Owner:HUAZHONG UNIV OF SCI & TECH

Graphene/C60 composite film ultraviolet detector and preparation method thereof

InactiveCN108682697AStrong light absorptionAchieve large area and high uniformitySemiconductor devicesCvd grapheneImage identification
The invention provides an ultraviolet light detecting transistor based on a graphene/C60 composite absorbing layer. The transistor comprises a gate metal layer, a highly doped silicon gate, a gate dielectric layer, and a graphene/C60 composite absorbing layer, wherein the gate metal layer, the highly doped silicon gate, the gate dielectric layer, the graphene/C60 composite absorbing layer are successively arranged from bottom to top. The highly doped silicon gate and the gate dielectric layer simultaneously support the graphene/C60 composite absorbing layer film as the substrate of the whole transistor device. The graphene/C60 composite absorbing layer is composed of a single layer or multiple layers of graphene and the C60 with a certain thickness. The graphene is arranged at the lower end of C60 and is furthermore used as a C60 growth template, wherein the graphene contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. The graphene interacts with the C60 through a Van der Waals force, thereby forming a hetero junction transistor with an ultraviolet absorbing characteristic. Array integrationcan be performed on a plurality of ultraviolet light detecting transistors. The invention provides a specific plan of the array system for spectrum detection analysis and image identification.
Owner:NANJING UNIV
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