Graphene/C60 composite film ultraviolet detector and preparation method thereof

A graphene and C60 technology, applied in the field of ultraviolet light detection, can solve difficult problems such as high responsivity and response speed, aging acceleration, etc., and achieve the effect of self-assembly coupling, strong light absorption, and photocurrent detection

Inactive Publication Date: 2018-10-19
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned devices still face the competition of responsivity or response speed, and it is difficult to achieve high responsivity a

Method used

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  • Graphene/C60 composite film ultraviolet detector and preparation method thereof
  • Graphene/C60 composite film ultraviolet detector and preparation method thereof
  • Graphene/C60 composite film ultraviolet detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: This embodiment provides a kind of based on graphene / C 60 The ultraviolet light detection transistor with composite absorption layer, the schematic diagram of its longitudinal section is shown in figure 1 shown.

[0036] A single ultraviolet light detection transistor includes a gate metal layer 11, a highly doped silicon gate 12 (0.5mm), a gate dielectric layer 13, a graphene / C 60 Composite absorbent layer.

[0037] Highly doped silicon gate 12 and gate dielectric layer 13 can simultaneously support graphene / C 60 Composite absorber thin film acts as the substrate of the whole transistor device.

[0038] Graphene / C 60 Composite absorber layer includes graphene layer 14 and C 60 Layer 15 (2-300nm).

[0039] The graphene layer 14 is in contact with the gate dielectric layer 13, and a source and a drain are formed at both ends; the source includes an upper source metal layer 16 and a lower source metal layer 17, and the drain metal layer includes an upp...

Embodiment 2

[0047] Embodiment 2: This embodiment provides a C-based 60 Thickness controllable graphene / C with controllable responsivity 60 Ultraviolet light detection transistor with composite absorbing layer. like image 3 As shown, different thicknesses of C were deposited on the graphene surface using the organic thermal evaporation method 60 Thin films, composite absorbing layers with different light absorbing degrees can be obtained. By controlling the thickness of C60, the ultraviolet absorption can be precisely controlled, so as to adjust the parameters such as quantum efficiency and responsivity of the device.

Embodiment 3

[0048] Embodiment 3: This embodiment provides based on graphene / C 60 Design scheme of m×n array composed of ultraviolet light detection transistors with composite absorbing layer. like Figure 4 As shown, the above is based on graphene / C 60 The gate of the ultraviolet light detection transistor 41 of the composite absorption layer is connected to the gate control terminal 41 through the protection resistor 43, and the drain is connected to the bit line 44 through the protection resistor 42, and the channel resistance value can be read out through the signal processing circuit. The ultraviolet light detection transistor array includes a plurality of ultraviolet light detection transistors 41 and related components constructed by m rows and n columns distributed in the array, and the resistance values ​​in all transistors in the array are sequentially read through the peripheral signal processing circuit to perform optical signal or graphic information detection and identifica...

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Abstract

The invention provides an ultraviolet light detecting transistor based on a graphene/C60 composite absorbing layer. The transistor comprises a gate metal layer, a highly doped silicon gate, a gate dielectric layer, and a graphene/C60 composite absorbing layer, wherein the gate metal layer, the highly doped silicon gate, the gate dielectric layer, the graphene/C60 composite absorbing layer are successively arranged from bottom to top. The highly doped silicon gate and the gate dielectric layer simultaneously support the graphene/C60 composite absorbing layer film as the substrate of the whole transistor device. The graphene/C60 composite absorbing layer is composed of a single layer or multiple layers of graphene and the C60 with a certain thickness. The graphene is arranged at the lower end of C60 and is furthermore used as a C60 growth template, wherein the graphene contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. The graphene interacts with the C60 through a Van der Waals force, thereby forming a hetero junction transistor with an ultraviolet absorbing characteristic. Array integrationcan be performed on a plurality of ultraviolet light detecting transistors. The invention provides a specific plan of the array system for spectrum detection analysis and image identification.

Description

technical field [0001] The present invention relates to a kind of based on graphene / C 60 The invention relates to an ultraviolet light detection transistor (array) of a composite absorption layer and a preparation method thereof, belonging to the field of ultraviolet light detection. Background technique [0002] Based on graphene / C 60 The principle of the ultraviolet light detector of the composite absorption layer is that the material absorbs photons in the ultraviolet band, and converts the optical signal into an electrical signal that can be detected by an external circuit, so as to achieve the goal of detecting optical signals in the ultraviolet band. [0003] With the development of modern science and technology, photodetectors with high sensitivity and high signal-to-noise ratio have become the focus of people's pursuit. Graphene is a sp 2 A monoatomic layer film in which hybridized carbon atoms are arranged in the form of benzene rings, which has advantages that t...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/028
CPCH01L31/02168H01L31/028
Inventor 王枫秋江洪柱秦书超徐永兵张荣
Owner NANJING UNIV
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