66results about How to "Improve photoresponse" patented technology

A new photocatalyst, which is high in visible light response, is great in quantum efficiency, and is more excellent in photocatalytic activity, is provided. A composite metal oxide, prepared combining two photocatalytic systems of TiO₂ and BiVO₄, including elements of Bi, Ti, and Vi as composition elements, can be a photocatalyst having a high activity under visible light. Particularly, BiTiVO₆, which is obtained at a compounding ratio of 1:1, can be a photocatalyst having a remarkably high activity under visible light. Moreover, a composite metal oxide expressed by a general formula BiTiMO₆ (in the formula, M represents at least one element selected from a group consisting of V, Nb, and Ta) can be a photocatalyst having a high activity under visible light.

The invention discloses an asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and a manufacturing method thereof. The detector comprises a Si/SiO2 substrate, a first electrode is arranged on the Si/SiO2 substrate, a two-dimensional material layer is arranged on the first electrode, a second electrode is arranged on the two-dimensional material layer, and the two-dimensional material layer is an n-layer heterojunction formed by graphene and two-dimensional material which are overlapped. The asymmetrical electrodes with different work functions are adopted, formation of a Fermi energy level difference from the first electrode to the second electrode is promoted, photocarriers are generated and then quickly diffused to an external circuit, quick combination of an electron hole can be avoided due to existence of the energy level difference, and the photo response of the device can be enhanced; and as the graphene and the two-dimensional material are combined, the high carrier mobility and the super quick response time of the graphene, and the high absorption rate towards light by the two-dimensional material are used respectively, and a super quick and super high-response photodetector can be realized.

An imager cell includes a photoreceptor, a sense node, and a pinned transfer gate. The pinned transfer gate is tied to the same potential of a substrate of the imager cell and is disposed between the photoreceptor and the sense node in order to transfer charge between the photoreceptor and the sense node. The imager further includes a reset transistor disposed to reset the sense node, and an output amplifier coupled to the sense node. Control circuitry supplies a photoreceptor readout clock to the photoreceptor. The readout clock includes an integration period and a transfer period. According to various embodiments of the invention, the imager cell provides improved noise performance, selective charge capacities, and improved blue light response beyond that of conventional imager cells.

The invention is a self-cross-linked polyvinyl butyral (PVB) binder for organic photoconductors (OPC's) used in electrophotography. The no cross-linked form of the binder is available from Monsanto Co. in the U.S.A. a Butvar TM , and from Sekisui Chemical Co. in Japan as Slek TM . I discovered that the PVB may be self-cross-linked by subjecting it to a thermal cure at between about 150 DEG -300 DEG C. for about 2 hours. I think other ways of cross-linking, for example, e-beam, UV or X-ray radiation, will achieve results similar to those I obtained with heat. No cross-linker, nor cross-linkable copolymer nor catalyst is required to accomplish the cross-linking. After self-cross-linking, the PV has good mechanical durability and good anti-solvent characteristics. In addition, he self-cross-linked PVB's glass transition temperature (Tg) increases from about 65 DEG C. to about 170 DEG C. Also, when conventional photoconductor pigments are dispersed in the self-cross-linked PVB, they are well dispersed, and the resulting OPC's have good charge acceptance, low dark decay, and, in general, good photodischarge characteristics. Also, OPC's with the self-cross-linked PVB exhibited improved adhesion, so multi-layered OPC's made according to this invention will hav improved inter-layer bonding and longer economic lives.

The invention discloses a nano noble metal modified Ag/MXene/TiO2 composite material and a preparation method thereof. The preparation method comprises the following steps: firstly, preparing a two-dimensional lamellar material MXene with a good lamellar structure; ultrasonically and uniformly dispersing MXene into an AgNO3 aqueous solution; then adding a formaldehyde aqueous solution containingstannous chloride (SnCl2) and trifluoroacetic acid (CF3COOH) to obtain an MXene composite material with uniformly distributed nano-Ag, and finally, separating out TiO2 sheets on the surface of the MXene by adopting a hydrothermal method to obtain the nano-Ag modified MXene/TiO2 composite material. The nano Ag and TiO2 sheets in the composite material are uniformly dispersed, the proportion of thenano Ag and TiO2 sheets is adjustable, and the photocatalytic performance of the composite material is greatly improved compared with that of commercial TiO2(P25). The addition of nano Ag enhances theabsorption of the composite material in a visible band, and the Ag/MXene/TiO2 ternary composite material has potential application in the field of photoelectrocatalysis as a catalyst material.

The invention discloses two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of a photoelectric detector, and belongs to the field of a high-performance photoelectric detector. The fabrication method of the two-dimensional superlattice indium selenide comprises the steps of pre-processing a SiO2/Si substrate; transferring onto the SiO2/Si substrate after an InSe material is pasted with transparent glue, and immersing in acetone; and performing high-temperature processing under a vacuum condition, thereby obtaining a two-dimensional superlattice InSe nanosheet on a surface of the SiO2/Si substrate. The two-dimensional superlattice InSe prepared by the invention has the advantages of high electrical transmission performance, high light response, favorable stability and rapid light response speed and has a good application prospect in the field of the high-performance photoelectric detector.

The invention provides a micro-bolometer based on graphene quantum points. The micro-bolometer comprises a substrate whose middle part is provided with a groove. The graphene quantum points are hanged above the groove and are connected through a graphene strip. Two ends of the graphene strip extend out of a graphene film to cover the substrate at two sides of the groove to form graphene electrodes. The micro-bolometer is characterized in that a hanged island-shaped graphene quantum point array is formed through the micro nano processing technology, the device temperature change in a same incident light power is increased by using the heat insulation effect by groove suspension, the device resistance temperature coefficient is raised by using quantization graphene, and the photoelectric detection is realized based on a micro-bolometer principle. Due to the absorption characteristic of a graphene material in an infrared wave band, the micro-bolometer provided by the invention can be used for the photoelectric detection of middle and far-infrared and terahertz wave bands, and a novel solution is provided for a present infrared photoelectric detector.

A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device.

The invention discloses a three-terminal type thin film transistor, a preparation method thereof and a photosensitive nerve synapse device. The three-terminal type thin film transistor comprises a substrate, a channel, a gate electrode, a source electrode and a drain electrode, wherein the channel is formed by compounding a metal oxide and a quantum dot material, and the quantum dot material is mixed in the metal oxide. The thin film transistor has the characteristics of high visible light response intensity and strong continuous photoconductive effect, so that the response spectrum of the photosensitive nerve synapse is broadened, the use requirements of the photosensitive nerve synapse in the visible light band can be met, and the thin film transistor is more suitable for being used as aphotosensitive nerve synapse device compared with the traditional oxide thin film transistor.

The invention provides an ultraviolet light detecting transistor based on a graphene/C60 composite absorbing layer. The transistor comprises a gate metal layer, a highly doped silicon gate, a gate dielectric layer, and a graphene/C60 composite absorbing layer, wherein the gate metal layer, the highly doped silicon gate, the gate dielectric layer, the graphene/C60 composite absorbing layer are successively arranged from bottom to top. The highly doped silicon gate and the gate dielectric layer simultaneously support the graphene/C60 composite absorbing layer film as the substrate of the whole transistor device. The graphene/C60 composite absorbing layer is composed of a single layer or multiple layers of graphene and the C60 with a certain thickness. The graphene is arranged at the lower end of C60 and is furthermore used as a C60 growth template, wherein the graphene contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. The graphene interacts with the C60 through a Van der Waals force, thereby forming a hetero junction transistor with an ultraviolet absorbing characteristic. Array integrationcan be performed on a plurality of ultraviolet light detecting transistors. The invention provides a specific plan of the array system for spectrum detection analysis and image identification.

An MgZnO/NPB ultraviolet light detector and a producing method thereof belong to the field of optoelectronic information, are mainly used for ultraviolet light detectors which generate low bias voltage and high response and solve the problems of inorganic wide band-gap semiconductor p-type doping and low organic electronic mobility. The detector is composed of a single phase MgxZn1-xO film which is grown on a quartz indium tin oxide (ITO) substrate, a NPB film, an LiF film and an electrode. The producing method thereof comprises that the quartz ITO substrate is pretreated in a molecular beam epitaxy (MBE) growth chamber; the MgxZn1-xO film with the thickness of 200-300nm is grown at the growth temperature of 400-500 DEG C inside the MBE growth chamber, and x=0.1-0.4; then thermal evaporation is conducted, and the NPB film with the thickness of 50-120nm is grown on the MgxZn1-xO film; the LiF electrode modification layer with the thickness of 0.5-2nm is grown on the NPB film; and the electrode is produced on the LiF electrode modification layer, so that the MgZnO/NPB ultraviolet light detector having a quartz ITO/MgxZn1-xO/NPB/LiF/electrode structure is produced.

The invention provides an optical sensor, a manufacturing method thereof and a display panel. The optical sensor comprises a plurality of optical sensor matrix units, and each optical sensor matrix unit comprises an induction TFT, an amplification TFT, a switch TFT and a storage capacitor, wherein an active layer of the induction TFT is amorphous silicon, an active layer of the amplification TFT is an oxide semiconductor, the induction TFT is connected with the amplification TFT, the amplification TFT is connected with the switch TFT, the switch TFT controls reading of electric signals detected by the induction TFT and amplified by the amplifying TFT, and when the amplification TFT is in an on state, the electric signals are transmitted to the signal reading circuit. A 3T1C architecture is adopted as an optical sensor matrix unit to replace a traditional 2T1C architecture, detection of weak light by an optical sensor can be achieved, the optical response of the optical sensor is effectively improved, and the optical sensor has high optical response and a high signal-to-noise ratio; the preparation of the induction TFT and the amplification TFT shares a plurality of yellow light processes, so the cost is reduced, and the advantages of large area and high uniformity of aSi can be fully exerted.

The invention relates to a tunnel compensate active infrared detector. Wherein, it grows lower contact layer on substrate, grows multi-quantum well, upper contact layer, prepares table and electrode; the invention is characterized in that said multi-quantum well comprises at least one repeat structure formed by at least one basic unit; said basic unit comprises buffer barrier, N-type infrared adsorption area and P-type barrier layer, while they are doped to form tunnel connector; the thickness of buffer barrier is 30-50nm; its forbidden band is wider than the forbidden band of semi-conductor of N-type infrared adsorption area, while bottom of conductor band is higher than the bottom of N-type infrared adsorption area. The invention has high light response, while its light current will increase along the increase of infrared adsorption area, with low hidden current, low power and low noise.

The invention discloses a mid-far infrared avalanche photodetector which comprises a substrate, a buffer layer, a lower ohmic contact layer, a multiplication layer, a charge layer, a gradient layer, an absorption layer and an upper ohmic contact layer which are sequentially connected from bottom to top, and the doping type of the substrate and the buffer layer is n type. Or the mid-far infrared avalanche photodetector comprises the substrate, the buffer layer, a second ohmic contact layer, the absorption layer, the gradient layer, the charge layer, the multiplication layer and a first ohmic contact layer which are sequentially connected from bottom to top, and the doping type of the substrate and the buffer layer is p type, wherein the multiplication layer is made of an AlAsxSb1-x material, x is greater than or equal to 0.12 and less than or equal to 0.18, the gradient layer is of a plurality of (InAs)m/(AlAs0.15Sb0.85)n quantum well structures or an InyAl1-yAszSb1-z material, and thedetection wavelength of the absorption layer is a middle and far infrared band. The mid-far infrared avalanche photodetector provided by the invention can block dark current and reduce noise, does notneed a cooling device, improves the working temperature of the device, reduces the cost, and is convenient to use.

The invention belongs to the technical field of detectors, and particularly relates to a molybdenum disulfide-based visible near-infrared InGaAs detector and a fabrication method thereof. The detectorstructure comprises a substrate material, wherein indium phosphide is used as the substrate material, an InP contact layer, an InGaAs absorption layer and a silicon oxide dielectric layer are sequentially grown on the substrate, a square hole is formed in the center of the silicon oxide dielectric layer, a molybdenum disulfide layer is transferred onto the silicon oxide dielectric layer, the square hole of the silicon oxide dielectric layer is filled with the molybdenum disulfide layer, Schottky contact is formed between the molybdenum disulfide layer and the InGaAs absorption layer, an uppermetal electrode is grown on a contact region of the molybdenum disulfide layer and the silicon oxide dielectric layer, and a lower metal electrode is grown on one side of the InP contact layer. By the InGaAs detector, wide spectrum detection within a range from near infrared light to visible light can be achieved.

The invention discloses an anisotropic plasmon resonant cavity graphene polarization detector and a design method. The anisotropic plasmon resonant cavity graphene polarization detector structurally comprises a substrate material layer, a metal reflecting layer, a dielectric spacer layer, a graphene layer and a metal bar grid layer. The polarization detector is based on a plasmon resonant cavity structure, a plasmon waveguide mode is formed between a top metal surface and a bottom metal surface, the cavity length of a resonant cavity is defined by a top metal boundary, and when the wavelengthand the cavity length meet the interference phase length condition, the mode reaches a resonance state, and a local strong light field of a deep sub-wavelength scale is realized. Due to anisotropy ofthe metal strip structure, the mode can only be excited by incident light with the polarization direction perpendicular to the metal strip grid, and light absorption and light response of graphene canbe improved; most of incident light with the polarization direction parallel to the metal bar grid is reflected, absorption and photoresponse of graphene cannot be effectively excited, and thereforethe high polarization extinction ratio and photoresponse enhancement of the selected polarization state are achieved.

The invention relates to a high-solubility photochromic compound and a preparation method thereof. The high-solubility photochromic compound has a structure as shown in a formula I. In the formula, R1, R2, R3 and R4 are the same or different and independently represent hydrogen, C1-C6 alkyl, C1-C6 alkoxy, C1-C6 alkyl alcohol, halogen, trifluoromethyl, phenyl, morpholine, piperidine or indole, R5 represents an alkyl group of C1 to C6, an alkoxy group of C1 to C6 or an alkyl alcohol of C1 to C6. R < 6 >, R < 7 > and R < 8 > are the same or different, at least one of theR < 6 >, R < 7 > and R < 8 > is-O-(CH2CH2O) m-Z, and the rest of theR < 6 >, R < 7 > and R < 8 > is hydrogen, C1-C6 alkyl, C1-C6 alkoxy, halogen, trifluoromethyl, phenyl, morpholine, piperidine or indole; m represents an integer of 0-6; z represents hydrogen or-(CH2) p-CH3; and p represents an integer of 0-6. The invention also provides a preparation method of the compound, and the prepared compound shows excellent compatibility in an organic solvent system or a polymer system, has the characteristics of rapid photoresponse, fast fading rate, good fatigue resistance and the like, and has a good application prospect.

The invention provides a terahertz detector. The terahertz detector comprises a substrate layer; a metal reflecting layer which is arranged on the substrate layer; a dielectric spacer layer which is arranged on the metal reflecting layer; a first Dirac semimetal layer and a second Dirac semimetal layer which are symmetrically arranged on the dielectric spacer layer; and a metal grating layer which is arranged on the dielectric spacer layer and is positioned between the first Dirac semimetal layer and the second Dirac semimetal layer. According to the terahertz detector, a composite structure of the anisotropic optical antenna and the Dirac semimetal layer is designed, and high polarization discrimination excitation and impedance matching coupling are based on the plasmon resonant cavity; incident light with the polarization direction perpendicular to the metal grating is efficiently converted into a sub-wavelength strong light field fully overlapped with the Dirac semimetal layer. According to the device, the light absorption and the light response of the Dirac semimetal layer are greatly improved, and the device has a higher polarization extinction ratio, a higher integration level, a higher response rate and lower power consumption.