37 results about "Tungsten diselenide" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention relates to the field of sensors, and discloses an acoustic sensor and a preparation method thereof. The acoustic sensor comprises an upper support body, an acoustic sensing layer and a lower support body; the acoustic sensing layer comprises a first electrode layer, a flexoelectric material layer and a second electrode layer which are stacked in sequence; the flexoelectric material layer contains a two-dimensional layered material and an ion regulator; the two-dimensional layered material is selected from at least one of graphene oxide, boron nitride, vermiculite, molybdenum disulfide, tungsten diselenide, tungsten disulfide, black phosphorus, Mxene, molybdenum ditelluride and tungsten trioxide; the ion regulator is selected from one or more than two of polystyrolsulfon acid, polyethylene glycol, poly (diallyldimethylammonium chloride), carboxyl ethylene copolymer, polyethylene sulfonic acid, polymethylacrylic acid, polyethylene phosphoric acid, polyvinylamine, sodium alginate, silk fibroin and carboxylated nanofiber. The acoustic sensor operates by using the flexoelectric effect, and has higher sensitivity and high Young modulus.

The invention relates to a novel logic phase inverter based on a single reconfigurable field effect transistor, which is the first logic phase inverter realized based on a single field effect transistor in the industry. The gate insulating layer is arranged on the surface of the input electrode, and a two-dimensional insulator, such as hexagonal boron nitride, without unsaturated dangling bonds on an interface is selected; the two-dimensional semiconductor channel is arranged on the surface, far away from the grid electrode, of the grid electrode insulating layer, and bipolar two-dimensional semiconductors such as tungsten diselenide, molybdenum diselenide and InSe are selected as materials; the driving electrode, the grounding electrode and the output electrode are arranged on the surface, far away from the gate insulating layer, of the semiconductor channel layer at intervals, and are electrically connected with the metal structure respectively; the driving electrode, the grounding electrode and the output electrode are made of semimetal with limited quantum capacitance, such as a single single-wall metal type carbon nanotube, graphene and the like.

This invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method, relating to the field of semiconductor electronics technology. It enables p-doping and n-doping of bipolar two-dimensional tungsten diselenide using graphodyne and a silicon dioxide insulating layer under a positive gate electric field. The resulting p-n junction achieves a large rectification ratio and stable rectification performance. This rectifier simultaneously performs n-type and p-type doping on the two-dimensional tungsten diselenide, forming a p-n homojunction in the horizontal direction. This allows the output current to exhibit high and low levels depending on the polarity of the input drain-source voltage, thus achieving the rectifier function. The rectifier achieves p-type and n-type doping under the influence of a positive gate electric field applied by the silicon gate electrode, through simultaneous contact between a portion of the two-dimensional tungsten diselenide with the graphodyne film and the silicon dioxide insulating layer, forming a homojunction. The technical solution provided by this invention is applicable to the rectification process.

A transition metal dichalcogenides device includes a substrate, at least one layer of boron nitride, a tungsten diselenide monolayer positioned such that the at least one layer of boron nitride at least partially encapsulates the tungsten diselenide monolayer, and a plurality of electrodes. Each of the plurality of electrodes includes gold and few-layer graphene, and the at least one layer of boron nitride includes hexagonal few-layer boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2 s to 11 s when the external magnetic field is in the range of about −17 T to about 17 T.

The application discloses a high-temperature heat-stable two-dimensional field effect transistor and a preparation method, and mainly solves the problem that two-dimensional materials in the two-dimensional field effect transistor are oxidized and decomposed at high temperature. The two-dimensional field effect transistor comprises, from bottom to top, a substrate (1), an insulating encapsulation protection bottom layer (2), a two-dimensional material thin film layer (3), an insulating encapsulation protection top layer (6), a gate electrode (7), source electrodes (4) and drain electrodes (5) at two ends of the thin film layer (3), and the encapsulation protection bottom layer and the encapsulation protection top layer are both made of any one or a plurality of combinations of aluminum nitride, hexagonal boron nitride or silicon nitride, so that oxygen molecules in air are prevented from diffusing to the two-dimensional material thin film layer to react at high temperature, and the two-dimensional material thin film layer plays a role in high-temperature protection; the two-dimensional material thin film layer is made of molybdenum disulfide, tungsten disulfide or tungsten diselenide. The two-dimensional field effect transistor has improved high-temperature resistance, and the oxidation and decomposition of the two-dimensional material at high temperature are avoided, and the two-dimensional field effect transistor can be used in aerospace, deep well drilling or other high-temperature environments.

The present invention provides a transistor-type photodetector with high sensitivity and easy startup, which includes a substrate. A gate is disposed on the substrate, and an insulating layer is wrapped on the gate. An active layer is disposed on the insulating layer, and the active layer includes an indium gallium zinc oxide thin film, a two-dimensional tungsten diselenide layer, and a lead selenide thin film. A source electrode is disposed at the left end of the lead selenide thin film, and a drain electrode is disposed at the right end. The present invention can overcome the lattice defect problems of the indium gallium zinc oxide thin film and the lead selenide thin film, improve the photocurrent of the optoelectronic device while also improving the sensitivity, ensure excellent electrical conductivity while also providing good stability, and improve the overall performance of the optoelectronic device. This phototransistor has the remarkable characteristics of high sensitivity and easy startup, and has a wide range of applications.

This invention relates to a method for preparing and applying a ternary heterostructure nanosheet of tungsten diselenide / tin diselenide / tin monoselenide, belonging to the field of gas sensor technology. The invention discloses a ternary heterostructure nanosheet of tungsten diselenide / tin diselenide / tin monoselenide and its application as a sensing material in a highly selective and sensitive flexible NO2 gas sensor. The invention utilizes a liquid-phase growth method, using SnSe2 nanosheets, ammonium tungstate, and diphenyldiselenoether as raw materials, and varying reaction conditions such as temperature, reaction time, and raw material content to prepare the ternary heterostructure nanosheet of tungsten diselenide / tin diselenide / tin monoselenide. Subsequently, these nanosheets are sprayed onto interdigitated electrodes and dried to form a film, thus preparing a chemielectric resistive gas sensor capable of detecting low concentrations of nitrogen dioxide gas at room temperature. It not only possesses high sensitivity and selectivity but can also be applied to flexible NO2 gas sensing.

The invention relates to a preparation method of a single-layer tungsten diselenide single-crystal thin film, which comprises the following steps: taking a tungsten source, ferrous chloride and a selenium source as raw materials, taking inert gas as carrier gas, adopting a chemical vapor deposition method, and carrying out three-temperature-zone heating growth to obtain the tungsten diselenide single-crystal thin film. According to the method, the growth process is simple and easy to operate, the preparation process is accurate and controllable, the domain orientation of the obtained single-layer tungsten diselenide crystal is consistent, no domain grain boundary exists, and the thickness uniformity and the crystal quality are excellent.

The invention discloses a two-dimensional semiconductor p-type field effect transistor based on transition metal oxide contact and a preparation method thereof, and relates to the technical field of semiconductor micro-nano electronic devices, and the preparation method comprises the steps: forming a single-layer tungsten diselenide on a substrate as a channel layer; defining pattern windows of a source electrode and a drain electrode on the surface of the channel layer to form an electrode region and a non-electrode region; sequentially depositing molybdenum trioxide and gold on the pattern windows of the source electrode and the drain electrode by adopting a thermal evaporation process to form a molybdenum trioxide / gold composite electrode structure; and removing the photoresist and sediments above a non-electrode region through a stripping process to prepare the two-dimensional semiconductor p-type field effect transistor based on transition metal oxide contact. The preparation of the high-performance two-dimensional semiconductor p-type field effect transistor is realized by introducing the ultrahigh work function molybdenum trioxide as the buffer layer and combining a mild process.

The application discloses a preparation method of high-temperature-resistant extreme-pressure lubricating oil and relates to the technical field of lubricating materials. The fluorosilicone oil is prepared by using 1,1,3,3-tetrachloro-1,3-diphenyl disiloxane and methyl trifluoropropyl cyclotrisiloxane as raw materials, contains multiple benzene rings and chlorine atoms, can improve the high-temperature resistance and stability of the fluorosilicone oil, can help to form a more stable lubricating film on a friction surface, and can improve the extreme-pressure resistance of the fluorosilicone oil. Then, bentonite and a tungsten diselenide precursor solution are mixed, and the tungsten diselenide is directly prepared on the surface of the bentonite by using an ultrasonic pyrolysis method. The ultrasonic wave makes the tungsten diselenide better combine with active sites on the surface of the bentonite, improves the loading capacity of the tungsten diselenide, reduces the aggregation and loss of the tungsten diselenide additive during use, prolongs the service life of the tungsten diselenide additive, and further improves the high-temperature resistance and extreme-pressure resistance of the system. The prepared lubricating oil has the effects of high-temperature resistance and extreme-pressure resistance.

The invention discloses a preparation method of high-temperature-resistant extreme-pressure lubricating oil, and relates to the technical field of lubricating materials. According to the invention, 1, 1, 3, 3-tetrachloro-1, 3-diphenyl disiloxane and methyl trifluoropropyl cyclotrisiloxane are used as raw materials to prepare the fluorosilicone oil, and the fluorosilicone oil contains a plurality of benzene rings and chlorine atoms, so that the high temperature resistance and stability of the fluorosilicone oil can be improved, meanwhile, a more stable lubricating film can be formed on a friction surface, and the extreme pressure resistance of the fluorosilicone oil is improved; then bentonite and a tungsten diselenide precursor solution are mixed, tungsten diselenide is directly prepared on the surface of bentonite through an ultrasonic pyrolysis method, tungsten diselenide is better combined with active sites on the surface of bentonite through ultrasonic waves, the loading amount of tungsten diselenide is increased, aggregation and loss of the tungsten diselenide additive in the using process are reduced, and the stability of the tungsten diselenide additive is improved. The service life of the tungsten diselenide additive is prolonged, and the high temperature resistance and the extreme pressure resistance of the system are further improved. The lubricating oil prepared by the invention has the effects of high temperature resistance and extreme pressure resistance.

The invention provides an environment-friendly flame-retardant new energy charging pile cable which comprises a conductor, an insulating layer, an inner sheath layer and an outer sheath layer. The insulating layer is prepared from 25 to 35 parts of hydrogenated styrene-butadiene block copolymer, 10 to 20 parts of borazine modified polybenzoxazine, 6 to 10 parts of antimony sulfide, 7 to 13 parts of MoS2 quantum dot-PI nanofiber, 5 to 10 parts of hydroxyapatite, 3 to 7 parts of copper hexacyanoferrate, 7 to 13 parts of PEEK grafted TiO2 nanoparticle, 4 to 8 parts of benzoxazine modified BN nanotube and 1 to 5 parts of silane modified melamine; the inner sheath layer comprises 35 to 40 parts of ethylene-ethyl acrylate copolymer, 8 to 12 parts of tungsten diselenide, 10 to 15 parts of aluminate modified ZB microcapsule, 6 to 10 parts of nano tantalum carbide, 10 to 15 parts of PLGA modified montmorillonite, 6 to 10 parts of BMI grafted carbon fiber and 2 to 6 parts of nano ZnO-Ag antibacterial agent; and the outer sheath layer comprises 35 to 45 parts of a PEEK-PTFE blend, 5 to 10 parts of niobium diselenide, 10 to 15 parts of modified nano clay, 4 to 8 parts of molybdenum ditelluride, 10 to 20 parts of zinc hydroxystannate, 3 to 7 parts of microencapsulated DCPD and 2 to 6 parts of a vulcanizing agent. The cable has the advantages of environmental protection, flame retardance, wear resistance, aging resistance and the like.

This invention provides an environmentally friendly flame-retardant PC resistant to high glow wire and its preparation method. The PC comprises: a matrix PC resin 1, a matrix PC resin 2, a branched PC resin, and tungsten diselenide nanoparticles. The material prepared by this invention not only has the advantages of high glow wire resistance and anti-dripping properties, but also has certain environmental value because the polymer material prepared by this invention does not use halogen-based flame retardants and requires less anti-dripping agent.

The application discloses a preparation method of an optical dielectric microsphere array / single layer of tungsten diselenide composite structure applied to improve valley polarization, and the optical dielectric microsphere dispersion liquid is dropped on the single layer of tungsten diselenide to obtain the optical dielectric microsphere array / single layer of tungsten diselenide composite structure through a self-assembly method. The optical dielectric microsphere array / single layer of tungsten diselenide composite structure obtained by the application has excellent valley polarization photoelectric performance, and provides a new scheme for design, manufacture and application of valley electronic devices.

This invention belongs to the technical field of potassium-ion battery electrode materials. It discloses tungsten disulfide / tungsten diselenide electrode materials, their preparation methods, and their applications. The method involves mechanically mixing bulk tungsten disulfide / tungsten diselenide materials obtained through high-temperature reactions with small-sized ionic liquids or small organic molecules. The ionic liquids or small molecules act as intercalating agents, inserting into the interlayer spaces of the tungsten disulfide / tungsten diselenide molecules to regulate the interlayer structure, resulting in expanded and exfoliated ultra-dispersed tungsten disulfide / tungsten diselenide materials. Ferromagnetic metal cations are then introduced into these ultra-dispersed tungsten disulfide / tungsten diselenide materials to obtain ferromagnetically doped ultra-dispersed tungsten disulfide / tungsten diselenide electrode materials. This invention utilizes a combined "intercalation-exfoliation-cation doping" strategy to obtain tungsten disulfide / tungsten diselenide electrode materials with large interlayer spacing, small size, few layers, ultra-dispersion, and certain ferromagnetic properties, suitable for use as a negative electrode material in potassium-ion batteries, achieving a capacity of up to 336 mAh·g. ‑1 .

This invention provides a palladium diselenide / tungsten diselenide vertical heterojunction field-effect transistor, its fabrication method, and its application, belonging to the field of semiconductor device technology. The palladium diselenide / tungsten diselenide vertical heterojunction field-effect transistor comprises, from bottom to top, a substrate, a vertical heterojunction, and a metal electrode; the vertical heterojunction includes a tungsten diselenide layer covering the substrate and a palladium diselenide layer covering the tungsten diselenide layer. This invention first constructs a tungsten diselenide layer on the substrate using chemical vapor deposition (CVD), and then directly grows a palladium diselenide layer on the surface of the tungsten diselenide layer using CVD. This vertical heterojunction field-effect transistor exhibits excellent performance with high saturation current density, high carrier mobility, and a high current on / off ratio, solving the technical problem of low performance and incompatibility with two-dimensional n-type semiconductor field-effect transistors in current two-dimensional p-type semiconductor devices.

The invention relates to the technical field of chemical power sources, in particular to a bimetallic selenide modified alkali metal negative electrode material and a preparation method and application thereof.The preparation method comprises the steps that prepared vanadium atom doped tungsten diselenide (VxWSe) powder is evenly coated on the surface of sodium / potassium metal, an adjustable interface protection layer is constructed, and the surface of the sodium / potassium metal is coated with the bimetallic selenide modified alkali metal negative electrode material; and the adsorption and transfer of sodium / potassium ions are optimized by utilizing the unique layered structure. The controllable interface protection layer can provide excellent dendrite growth prevention and desolvation functions, and the cycle life of the alkali metal battery is greatly prolonged by reducing side reactions. In addition, the preparation method has the advantages that the operation is simple, modification factors are easy to control, and large-scale production can be realized.

The application relates to a preparation method and application of a tungsten diselenide nanomaterial. The method adopts a direct current arc plasma discharge method, tungsten powder and selenium powder are uniformly mixed according to a certain material molar ratio, pressed into a block, placed in an anode graphite pot of a reaction chamber, and a cathode tungsten rod is horizontally arranged opposite to the anode graphite pot. The discharge reaction is carried out in a water cooling system and an argon atmosphere protection, and after cooling and passivation, WSe2 nanomaterial is obtained at a condensing wall sleeve and a graphite pot. Meanwhile, the WSe2 nanomaterial is used for Li2S6 solution adsorption capacity test. The preparation process is simple, the material consumption is small, the repeatability is high, the sample yield and purity are ensured, and the method is suitable for large-scale industrial production. In addition, as a strong adsorption material of polysulfide, the WSe2 nanomaterial has good application prospect in the battery field.

The invention discloses a vertical tungsten diselenide PIN self-powered photovoltaic detector and a preparation method thereof. According to the invention, niobium-doped tungsten diselenide is used as a degenerate P-type doped layer, original tungsten diselenide is used as an I-type layer, argon plasma-doped tungsten diselenide is used as a degenerate N-type doped layer, and the tungsten diselenide vertical PIN self-powered photovoltaic detector is constructed. Self-powered detection of the device is realized by utilizing a photovoltaic effect generated by a PN junction formed between the doping layers, a built-in electric field is improved by utilizing degenerate doping and a vertical structure, and carrier drift and separation are accelerated. The response speed is improved by increasing the thickness of the original tungsten diselenide layer, the responsivity is improved by reducing the thickness of the niobium-doped tungsten diselenide layer, and high-performance self-powered photovoltaic detection is achieved.

This invention relates to the field of batteries, and more particularly to a nitrogen-doped carbon / tungsten diselenide nanosphere composite material, its preparation method, and its applications. This invention achieves tight coupling between few-layer WSe2 nanosheets and a nitrogen-doped carbon framework through a process combining complexation-polymerization and subsequent selenization. The resulting material consists of nanosphere particles, providing more electrochemical active sites and shortening the zinc ion diffusion distance. By introducing a nitrogen-doped carbon framework, this invention effectively improves the overall conductivity of the composite material and suppresses the stacking and aggregation of WSe2 nanosheets during charge and discharge, thereby significantly improving rate performance and cycle stability.

The utility model relates to a reconfigurable grid-control filter circuit, which comprises a reconfigurable transistor, the reconfigurable transistor adopts semimetal carbon nano tube electrode contact and tungsten diselenide channel materials, boron nitride is used as a gate medium, metal gold is used as a bottom gate electrode, and the bottom gate electrode is used as a gate electrode. The drain electrode of the reconfigurable transistor serves as the signal input end of the circuit, the source electrode of the reconfigurable transistor is grounded, and the grid electrode of the reconfigurable transistor serves as the working state control end of the circuit and is used for receiving grid electrode voltage to regulate and control the working state of the reconfigurable transistor; the resistance value of the pull-down resistor is 500 megohms, one end of the pull-down resistor is connected to a node between the source electrode of the reconfigurable transistor and the ground, and the other end of the pull-down resistor serves as a signal output end of the circuit. The circuit can realize a grid-controlled rectifying and filtering function, and can sequentially show five functional modes of all-pass, positive-pass, all-off, reverse-pass and all-pass through regulation and control of grid voltage.

The invention discloses a method for improving the photoluminescence intensity of a single-layer tungsten diselenide WSe2 single crystal, and belongs to the technical field of two-dimensional material photoelectric devices, the single-layer WSe2 single crystal grown by a CVD (chemical vapor deposition) method is soaked or spin-coated by a methanesulfonic acid aqueous solution with the concentration of 10-40%, and the treated single-layer WSe2 single crystal is subjected to a photoluminescence test to obtain the photoluminescence intensity of the single-layer WSe2 single crystal. The single-layer WSe2 single crystal which is not subjected to acid treatment is weakest in luminescence, the fluorescence intensity is gradually enhanced and the half-peak width is weakened along with the increase of the concentration, 4.55 times of fluorescence enhancement is realized by soaking the single-layer WSe2 single crystal in methanesulfonic acid with the mass fraction of 40%, and the result of a second harmonic test shows that the result is more accurate. The single-layer WSe2 single crystal shows an obvious sextuple structure with the second harmonic intensity related to the polarization angle under the parallel condition, which indicates that the acid treatment under the dosage does not cause damage to the lattice structure. In addition, by building the back gate field effect transistor, it can be seen that the electrical performance after acid treatment is improved.

A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.

The invention provides step-shaped nano tungsten diselenide as well as a preparation method and application thereof. Comprising the following steps that in a double-temperature-zone chemical vapor deposition system, selenium powder is placed on the upstream of a gas path, a metal tungsten net is placed on the downstream of the gas path, chemical vapor deposition is sequentially carried out through a heating program and a constant-temperature program, rapid cooling is carried out after the constant-temperature program is finished, and the step-shaped nano tungsten diselenide can be obtained. The highest reaction temperature is 500 DEG C in the low-temperature area of the area where the selenium powder is located; the highest reaction temperature is 700 DEG C when the area where the tungsten mesh is located is the high-temperature area. The method disclosed by the invention effectively solves the problems that the existing nano tungsten diselenide preparation process is complicated, the reaction temperature is high, the precise regulation and control of the nano scale are difficult to realize, the production cost is high and the like. Moreover, the experimental result is good in repeatability, and the step-shaped nano tungsten diselenide shows excellent catalytic activity and stability in the field of electro-catalysis and has a wide application prospect.

The application belongs to the technical field of photoelectric detectors, and discloses a non-refrigeration high-gain low-voltage avalanche photodetector based on a two-dimensional material heterojunction, which comprises, from bottom to top, a silicon (Si) substrate layer, a silicon dioxide (SiO2) dielectric layer, a rectangular electrode structure arranged at two ends of the SiO2 layer, and a heterojunction composed of an indium selenide (InSe) layer and a tungsten diselenide (WSe2) layer which are stacked alternately on the electrode. The InSe and the WSe2 form a type II band heterojunction, and efficient separation of carriers can be realized at the interface under a low bias voltage. The device structure directly utilizes the SiO2 dielectric and the rectangular electrode structure, realizes process simplification and good electrical isolation, can generate an avalanche effect under a low working voltage of less than 1V, and has an avalanche gain of 10 5 , has the advantages of low power consumption, high gain, good process compatibility, etc., and is suitable for weak light detection, high-sensitivity imaging and next-generation high-density photoelectric integrated systems.

The application provides a tungsten diselenide / nitrogen-doped porous carbon composite material, a modified diaphragm and a preparation method and application thereof. The tungsten diselenide / nitrogen-doped porous carbon composite material comprises nitrogen-doped porous carbon, and the pore channel of the nitrogen-doped porous carbon is filled with tungsten diselenide; wherein the mass ratio of tungsten diselenide to carbon in the nitrogen-doped porous carbon is (10-30):(90-70), and the doping amount of nitrogen in the tungsten diselenide / nitrogen-doped porous carbon composite material is 1-5 at.%. The application inhibits the shuttle effect caused by the dissolution of polysulfide into an organic electrolyte in the room-temperature sodium-sulfur battery cycle process by modifying the diaphragm with the tungsten diselenide / nitrogen-doped porous carbon composite material.

The invention discloses a method for green synthesis of a tungsten diselenide / platinum nano material and application thereof, and belongs to the technical field of biological detection materials. The preparation method comprises the following steps: adding a WSe2 nanosheet solution into an ethylene glycol solution, stirring at a constant speed, adding hexachloroplatinic acid for reaction, and centrifuging to obtain the tungsten diselenide / platinum nano material. The synthesis method provided by the invention is green and environment-friendly, simple to operate, low in cost and high in efficiency, and the prepared tungsten diselenide / platinum nano material has excellent oxidase catalytic activity and can be combined with diazotization reaction to realize quantitative analysis of nitrite in food. According to the colorimetric detection method of the tungsten diselenide / platinum nano material, provided by the invention, the detection limit of nitrite is 4.08 mu M, and the linear range is 5-400 mu M.

The present invention discloses a high-temperature resistant extreme pressure lubricating oil and a preparation method thereof, which relates to the technical field of lubricating materials. First, the present invention uses 1,1,3,3-tetrachloro-1,3-diphenyldisiloxane and methyltrifluoropropylcyclotrisiloxane as raw materials to prepare fluorosilicone oil, which contains multiple benzene rings and chlorine atoms, can improve the high-temperature resistance and stability of the fluorosilicone oil, and at the same time helps to form a more stable lubricating film on the friction surface, improving the extreme pressure resistance of the fluorosilicone oil; then, bentonite and tungsten diselenide precursor solution are mixed, and tungsten diselenide is directly prepared on the surface of bentonite by ultrasonic pyrolysis. The ultrasonic wave enables tungsten diselenide to better combine with the active sites on the surface of bentonite, increasing the loading amount of tungsten diselenide, reducing the aggregation and loss of tungsten diselenide additive during use, prolonging the service life of the tungsten diselenide additive, and further improving the high-temperature resistance and extreme pressure resistance of the system. The lubricating oil prepared by the present invention has the effects of high-temperature resistance and extreme pressure resistance.

The invention provides a high-sensitivity easy-to-start transistor type photoelectric detector which comprises a substrate, a grid electrode is arranged on the substrate, an insulating layer wraps the grid electrode, an active layer is arranged on the insulating layer, and the active layer comprises an indium gallium zinc oxide thin film, a two-dimensional tungsten diselenide layer and a lead selenide thin film. The left end of the lead selenide film is provided with a source electrode, and the right end is provided with a drain electrode. According to the invention, the lattice defect problem of the indium gallium zinc oxide film and the lead selenide film can be overcome, the photocurrent of the optoelectronic device is improved, the sensitivity is also improved, the excellent conductivity is ensured, the good stability is also provided, and the overall performance of the optoelectronic device is improved. The photoelectric transistor has the remarkable characteristics of high sensitivity and easiness in starting, and is wide in application range.