Two-dimensional horizontal homojunction, self-driven logic photoelectric switch, and preparation method of self-driven logic photoelectric switch

Abstract

The invention provides a two-dimensional horizontal homojunction, a self-driven logic photoelectric switch and a preparation method of the self-driven logic photoelectric switch, and belongs to the technical field of semiconductor photoelectricity. The photoelectric switch comprises two-dimensional tungsten diselenide, a silicon / silicon dioxide insulating substrate, boron nitride, an indium metaln-type doped source layer and a gold metal p-type doped source layer. P-type doping is carried out on two-dimensional tungsten diselenide by utilizing a gold electrode, n-type doping is carried on thetwo-dimensional tungsten diselenide by utilizing an indium electrode, and the two-dimensional tungsten diselenide level p-n homojunction is constructed. Boron nitride and insulating silicon are usedas a gate dielectric layer, and silicon is used as a gate electrode. The two-dimensional tungsten diselenide material used as a photosensitive material generates photo-generated electron hole pairs under illumination, and gate voltage is applied to the silicon substrate to regulate the rectification direction of a homojunction, so that the flowing direction of photo-generated electron holes is controlled, and the effect of the logic photoelectric switch is achieved.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor optoelectronic technology, in particular to a two-dimensional horizontal homojunction, self-driven logic photoelectric switch and a preparation method thereof. 【Background technique】 [0002] Two-dimensional homojunction and related devices have a wide range of applications in the new generation of optoelectronic devices, such as photodetection, image sensing, logic devices, memory, etc. Therefore, two-dimensional homojunction and related technologies have always been an international research hotspot and one of the main technical fields of competition in various countries. Due to their excellent carrier transport properties and strong light-matter interaction at atomic thickness, 2D materials are considered as candidate materials for next-generation novel electronic and optoelectronic devices. At present, there have been many optoelectronic devices based on two-dimensional p-n junctions, and p-n h...

AI Technical Summary

Problems solved by technology

Traditional doping methods, such as ion implantation and surface modification, are difficult to form a stable doping state in 2D materials, while causing inevitable physical damage to the material

The p-n junction constructed by stacking method needs to be assisted by polymer film stacking, and it is difficult to ensure the cleanliness of the interface

In addition, due to the mechanical flexibility of 2D materials, uncontrollable random stacking and bubbles at the interface are difficult to completely resolve, which seriously affect the carrier transport performance of p-n junctions.

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