A two-dimensional horizontal homojunction, self-driven logic photoelectric switch and its preparation method

Abstract

The invention provides a two-dimensional horizontal homojunction, self-driven logic photoelectric switch and a preparation method thereof, which belong to the field of semiconductor photoelectric technology. The photoelectric switch of the present invention comprises a two-dimensional tungsten diselenide, a silicon / silicon dioxide insulating substrate, boron nitride, an n-type doping source layer of indium metal, and a p-type doping source layer of gold metal. The invention utilizes the gold electrode to generate p-type doping to the two-dimensional tungsten diselenide, and the indium electrode to generate n-type doping to the two-dimensional tungsten diselenide, thereby constructing the two-dimensional tungsten diselenide horizontal p-n homojunction. Boron nitride and insulating silicon are used as the gate dielectric layer, and silicon is used as the gate electrode. The two-dimensional tungsten diselenide material is used as a photosensitive material to generate photo-generated electron-hole pairs under light, and a gate voltage is applied to the silicon substrate to control the rectification direction of the homojunction, thereby controlling the flow direction of photo-generated electrons and holes, and acting as a logic photoelectric switch role.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor optoelectronic technology, in particular to a two-dimensional horizontal homojunction, self-driven logic photoelectric switch and a preparation method thereof. 【Background technique】 [0002] Two-dimensional homojunction and related devices have a wide range of applications in the new generation of optoelectronic devices, such as photodetection, image sensing, logic devices, memory, etc. Therefore, two-dimensional homojunction and related technologies have always been an international research hotspot and one of the main technical fields of competition in various countries. Due to their excellent carrier transport properties and strong light-matter interaction at atomic thickness, 2D materials are considered as candidate materials for next-generation novel electronic and optoelectronic devices. At present, there have been many optoelectronic devices based on two-dimensional p-n junctions, and p-n h...

AI Technical Summary

Problems solved by technology

Traditional doping methods, such as ion implantation and surface modification, are difficult to form a stable doping state in 2D materials, while causing inevitable physical damage to the material

The p-n junction constructed by stacking method needs to be assisted by polymer film stacking, and it is difficult to ensure the cleanliness of the interface

In addition, due to the mechanical flexibility of 2D materials, uncontrollable random stacking and bubbles at the interface are difficult to completely resolve, which seriously affect the carrier transport performance of p-n junctions.

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