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A self-driven broadband photodetector and its fabrication method

ActiveCN117238978BReduce dark currentself-drivingFinal product manufactureOhmic contactBroadband
The present invention aims to provide a self-driven broadband photodetector and its fabrication method, belonging to the field of photodetector technology. In this detector, one side of a narrow-bandgap two-dimensional semiconductor is in contact with a metal, and the other side is in contact with a two-dimensional semi-metal, thereby constructing good asymmetric Schottky and Ohmic contacts on both sides of the narrow-bandgap two-dimensional semiconductor. This structure achieves a wide detection spectral range from visible light to infrared light and high photodetector performance without the need for external power supply, and the device exhibits a low dark current at zero bias, reaching 10-1. ‑13 A, which also has high responsiveness.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA