The present invention aims to provide a self-driven
broadband photodetector and its fabrication method, belonging to the field of
photodetector technology. In this
detector, one side of a narrow-bandgap two-dimensional
semiconductor is in contact with a
metal, and the other side is in contact with a two-dimensional semi-
metal, thereby constructing good asymmetric Schottky and Ohmic contacts on both sides of the narrow-bandgap two-dimensional
semiconductor. This structure achieves a wide detection spectral range from visible light to
infrared light and high
photodetector performance without the need for external power supply, and the device exhibits a low
dark current at
zero bias, reaching 10-1. ‑13 A, which also has high responsiveness.