The invention relates to a nanometer aluminum
oxide polishing solution for a
silicon carbide substrate slice as well as a preparation method and application of the nanometer aluminum
oxide polishing solution. The nano aluminum
oxide polishing solution is prepared from the following components in percentage by weight: 0.5 to 6.0 percent of alpha-Al2O3
abrasive, 0.5 to 5.0 percent of oxidant, 0.1 to 1.0 percent of pro-oxidant, 0.05 to 0.50 percent of pH (Potential of
Hydrogen)
regulator, 0.10 to 0.50 percent of dispersing agent and the balance of water, the D10 of the alpha-Al2O3
grinding material ranges from 0.100 to 0.140 [mu] m, the D50 of the alpha-Al2O3
grinding material ranges from 0.180 to 0.230 [mu] m, the D90 of the alpha-Al2O3
grinding material ranges from 0.240 to 0.300 [mu] m, the D100 of the alpha-Al2O3 grinding material ranges from 0.340 to 0.420 [mu] m, and The preparation method of the alpha-Al2O3
abrasive material comprises the following steps: preparing alpha-Al2O3
powder into alpha-Al2O3
slurry, adding
potassium citrate, grinding, and carrying out
particle classification on the alpha-Al2O3
slurry after grinding, so as to obtain the alpha-Al2O3
abrasive material. Compared with the prior art, graded alpha-Al2O3 is selected as abrasive particles for
silicon carbide polishing,
potassium permanganate with higher oxidability is selected as an
oxidizing agent, and the prepared nanometer aluminum oxide polishing solution is applied to chemical mechanical polishing of a
silicon carbide substrate slice; the
surface roughness of the
silicon carbide substrate slice is reduced while the removal rate of the silicon surface material of the
silicon carbide substrate slice is improved, and the atomic-scale
smooth surface quality is obtained.