The utility model discloses a
tensile strain germanium substrate and a
tensile strain germanium sensor, which can be used in the field of semiconductors. The
tensile strain germanium substrate comprises a first
silicon substrate, a first intrinsic strain germanium layer, an intrinsic strain germanium / germanium-
silicon multi-
quantum well layer, a second intrinsic strain germanium layer, a second doped strain germanium layer, a ferroelectric
oxide layer and a
dielectric layer which are stacked in sequence; the
diameter of the first
silicon substrate is not less than 8 inches. Therefore, according to the germanium-based sensor manufactured based on the tensile strain germanium-based substrate, on one hand, the ferroelectric
oxide has a negative
capacitance effect, so that relatively large positive
capacitance in a thick germanium vertical PIN structure can be effectively compensated, the
capacitance of the whole germanium-based sensor is reduced, and meanwhile, high
responsivity and high working speed of the germanium-based sensor are realized; and on the other hand, two photoelectric sensing
layers including the second intrinsic strain germanium layer and the intrinsic strain germanium / germanium-silicon multi-
quantum well layer exist, and the
spectral response range of the germanium sensor can be remarkably expanded through the combined structure of the second intrinsic strain germanium layer and the intrinsic strain germanium / germanium-silicon multi-
quantum well layer.