397results about How to "Wide spectral response range" patented technology

The invention relates to the technical field of detection, and discloses detecting device and method. The detecting device comprises an image acquiring module and an image processing module, wherein the image acquiring module acquires image information of a liquid crystal display panel to be detected, and the image processing module is in signal connection with the image acquiring module. The image processing module compares received image information with a defect database and judges defect level of the liquid crystal display panel to be detected. During use of the detecting device, the image acquiring module can acquire image information of any position of the liquid crystal display panel to be detected, the image processing module compares received the image information acquired by the image acquiring module with the defect database and judges the defect level of the liquid crystal display panel to be detected. Accordingly, by the detecting device, defect identification rate and detection efficiency of the liquid crystal display panel are improved.

The invention discloses a system and method for quickly inspecting a tunnel defect based on machine vision. The system is arranged on an investigation bearing vehicle. The system comprises a machine vision sub-system used for acquiring the to-be-investigated object image data by a CCD (Charge Coupled Device) camera, a laser ranging sub-system used for measuring an imaging distance of an image acquired by the machine vision sub-system by a laser ranging method, a photoelectric speed measuring sub-system used for providing a corresponding coordinate of the acquired image in a tunnel, a control sub-system used for controlling the laser ranging sub-system and the photoelectric speed measuring sub-system, transmitting the data acquired by the laser ranging sub-system and the photoelectric speed measuring sub-system to a data processing sub-system and triggering the machine vision sub-system to acquire an image and transmit the image to the data processing sub-system, a data processing sub-system used for processing the image acquired by the machine vision sub-system according to the data from the control sub-system, and a power supply sub-system used for providing voltage for other sub-systems. According to the invention, the general tunnel defect can be regularly and quickly inspected and the inspecting process is safe, quick, full-automatic and real-time without influencing normal work of the tunnel.

The present invention relates to silico fluorene copolymer and its application. The silico fluorene copolymer is copolymer of 2, 7-silico fluorine and narrow band gap monomer, and has absorption spectrum with absorption side band greater than 500 nm and absorption band side expanded to red light and near infrared region. It is prepared through copolymerizing 2, 7-silico fluorine and narrow band gap monomer containing hetero N and/or S atoms. It may be applied in making polymer solar cell, FET, etc. It has high mobility, high long-term stability and high energy converting efficiency.

The invention relates to a silicon detector structure with a wide spectral response range, which comprises an n-type silicon substrate, a silicon dioxide medium masking layer, a p-type doping layer, a front surface contact electrode, an antireflection film layer, a broad-spectrum absorbing black silicon layer, a medium passivating layer and a back surface contact electrode, wherein a circular groove is arranged on the surface of the n-type silicon substrate; the silicon dioxide medium masking layer is formed around the circular groove on the surface of the n-type silicon substrate, and the middle of the silicon dioxide medium masking layer is an annular structure; the p-type doping layer is arranged in the circular groove of the n-type silicon substrate; the front surface contact electrode is produced on the inner wall of the annular structure of the silicon dioxide medium masking layer and covers the partial edge of the surface of the annular structure to form an annular structure; the antireflection film layer is produced in the annular structure of the front surface contact electrode and covers the surface of the p-type doping layer; the broad-spectrum absorbing black silicon layer is produced on the back surface of the n-type silicon substrate; the medium passivating layer is point-type and is formed on the surface of the broad-spectrum absorbing black silicon layer; and the back surface contact electrode is produced on the surface of the broad-spectrum absorbing black silicon layer and covers the point-type medium passivating layer.

The invention relates to a lamination solar battery. The lamination solar battery is composed of an amorphous silicon film top battery, a perovskite middle battery and a nanocrystalline silicon bottom battery, or has a double-lamination structure taking an amorphous silicon film battery as a top battery and a perovskite battery as a bottom battery. The optical band gaps of three materials, i.e., amorphous silicon, perovskite and nanocrystalline silicon (crystalline silica) match well (1.75eV, 1.5eV and 1.12eV) so that light of different wavebands can be absorbed segment by segment. The amorphous silicon film top battery and the nanocrystalline silicon bottom battery (or the crystalline silica, nanocrystalline silicon germanium and amorphous silicon germanium) clamp the perovskite therebetween so as to protect the perovskite battery and reduce the influence exerted by atmosphere and water on the perovskite battery. At the same time, the amorphous silicon top battery can absorb ultraviolet light so as to protect a perovskite sub-battery. Besides, an amorphous silicon layer at the top has better UV and blue light response than the perovskite battery so that the defects of the perovskite middle battery are made up for.

The invention discloses a back-illuminated Si-PIN photoelectric detector taking a black silicon material as a photosensitive layer and a manufacturing method thereof, belonging to the technical field of photoelectric detection. The photoelectric detector comprises a silicon intrinsic substrate, a P-type area located in the centre of the front surface of the silicon intrinsic substrate, an annularP+ area located around the front surface of the silicon intrinsic substrate, an N-type black silicon layer located on the back surface of the silicon intrinsic substrate, upper electrodes located on the upper surface of the P-type area and the P+ area, and lower electrodes located on the two sides of the lower surface of the N-type black silicon layer. According to the invention, the black silicon material is used as the photosensitive layer, and an annular P+ area 3 is increased around the P-type area 2 so that the back-illuminated Si-PIN photoelectric detector disclosed by the invention canabsorb light waves of near-infrared band and has higher light absorptivity and wider response band than a traditional Si photoelectric detector; the manufacturing process is relatively simple and hasthe characteristics of low cost, fast response speed, high responsiveness and wide response band, is easy to realize integration, and has obvious advantages in large-scale marketization.

The invention discloses a preparation method of a ZnO-doped TiO2 hollow sphere composite photocatalyst, comprising the following steps of: preparing Zn<2+> doped carbon/titanium dioxide nuclear-shell particles by adopting a template method and a hydrolytic cladding method, and then calcinating the nuclear-shell particles to obtain the ZnO-doped TiO2 nano hollow sphere composite photocatalyst. The photocatalyst can be used for catalyzing and degrading cationic dyes under ultraviolet or solar visible light. By utilizing low-cost titanium sources, zinc sources and carbon spheres for preparing the ZnO-doped TiO2 nano hollow sphere composite photocatalyst, the preparation method has the advantages of low cost of raw materials, simple process, short preparation period, less energy consumption and belongs to green synthetic technologies. After TiO2 hollow spheres are doped and compounded by utilizing ZnO, absorption spectrums generate red shift by utilizing the interface coupling effect of the TiO2 hollow spheres and the ZnO so that the spectral response range of the photocatalyst is broadened, and the utilization rate of solar energy is improved; and meanwhile, the method can also inhibit the compounding of photon-generated carriers and improve the activity of the photocatalyst by utilizing the high conductivity of ZnO particles.

The invention relates to a yttrium oxide/ titanium dioxide nanometer composite material. The component quality percentage is 0.1-75 of Y2Ti2O7, 10-45 of anatase TiO2 and 10-70 of rutile TiO2. The preparation method for nanometer powder is that sol-gel method is used to combine with the simple roasting and so it is provided with relative simple technology, easy operation, low demand for equipment and low cost. Compared with pure TiO2, the yttrium oxide/titanium dioxide nanometer composite material prepared in invention has higher catalytic capability. Actually the anatase titanium oxide composite Y203 is the decoration to TiO2 grain so that the charge separation effect of system can be improved and the TiO2 spectral response range is enlarged. The size of grain of obtained product is equal and the spectral response range is enlarged. It can be applied widely in water pollution treatment, waste gas treatment and bacteria disinfection so on.

The invention discloses a precious metal/zinc indium sulfide/titanium dioxide nano heterostructure photocatalyst, which is characterized in that ultra-thin zinc indium sulfide nanosheets are grown on the surface of titanium dioxide nanofibers, then precious metal nanoparticles are assembled on positive and negative surfaces of the ultra-thin zinc indium sulfide nanosheets, so that precious metal/zinc indium sulfide/titanium dioxide nano heterostructure is hierarchically constructed. The preparation method includes adding glacial acetic acid, butyl titanate and polyvinylpyrrolidone into anhydrous ethanol, preparing butyl titanate/polyvinylpyrrolidone composite nanofibers by electrostatic spinning, and performing high temperature calcination to obtain titanium dioxide nanofibers; adding zinc acetate dihydrate, indium nitrate hexahydrate, cysteine and sodium hydroxide into deionized water, then adding the titanium dioxide nanofibers, and performing hydrothermal reaction to obtain zinc indium sulfide/titanium dioxide heterostructure; and activating the heterostructure in a stannous chloride aqueous solution, and then performing in-situ reduction in a precious metal brine solution. The photocatalytic material is excellent in performance of photocatalytically splitting of water into hydrogen.

The invention discloses a black silicon methyl sulfonyl methane (MSM) structure photoelectric detector, which comprises a monocrystalline silicon substrate and is characterized in that: the surface of the monocrystalline silicon substrate is provided with a black silicon thin film layer serving as a photosensitive area; an interdigital electrode is arranged on the black silicon thin film layer; a barrier layer is arranged below the interdigital electrode; and a passive layer is arranged in the area besides the area where the interdigital electrode is arranged. The detector has a wide spectral response range and high responsiveness, and can be used for detecting ultraviolet light, visible light or near infrared light.

The invention discloses a cross-linkable fluorobenzene-containing end-capped liquid crystal conjugated polymer based on benzodithiophene and double thiophene-substituted difluorobenzothiadiazole and an application thereof to a solar cell. The polymer is characterized by being shown as a structural formula in the specifications. The conjugated polymer disclosed by the invention has liquid crystal characteristic, and can be used for inducing, adjusting and controlling the ordered structure of an active layer and increasing hole mobility; the terminal group of the polymer is functionalized by using a fluorobenzene-containing end-capping agent, so that uniform dispersion between the polymer and PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) can be facilitated, the hole electron transmission rate of the active layer is increased, the device performance is enhanced effectively, and energy transformation efficiency is up to 7.6 percent; and due to the introduction of a cross-linkable unit, a cross-linked active layer material with a stable structure can be obtained, the stability of a device is enhanced, the service life of the device is prolonged, and the efficiency can still reach 7.3 percent 40 days later.

The invention relates to a bismuth oxyiodide/porous titanium dioxide compound photocatalyst as well as a preparation method and an application thereof and belongs to the field of photocatalysis. The technical scheme is as follows: bismuth nitrate is dispersed in ethylene glycol, potassium iodide is added, stirring is performed continuously, then porous titanium dioxide microspheres are added, ultrapure water is added, stirring is continuously performed at the room temperature for 1-3 h, an obtained product is washed and dried, and the bismuth oxyiodide/porous titanium dioxide compound photocatalyst is obtained. Porous titanium dioxide microspheres are synthesized with a simple hydrothermal method, and are large in specific surface area, uniform in size and beneficial to light scattering. The bismuth oxyiodide/porous titanium dioxide compound photocatalyst synthesized with the microspheres has the wider spectral response range, has efficient photocatalystic activity under visible light and has characteristics of wide application range and good stability, the technology is simple, operation is easy, and the cost is low.

The invention relates to an adjustable band-gap thin-film solar cell based on a glass substrate and a fabricating method thereof. The invention is characterized in that materials with different band-gap structures are adopted as the absorbing layers such as Alpha-SiC, Alpha GexSi1-x, Mu-Si, and the like, so that a three-section structure is formed, thereby the light energy trapping is enhanced; different band gaps can be obtained by adopting a method for adjusting the proportion of ingredients of Ge and Si of an intrinsic layer, thereby the light energy absorption is enhanced; the energy consumption of process processing is less by adopting the PECVD (plasma enhanced chemical vapor deposition) film forming; the series connection in the cells is realized by laser scribing, the photolithographic process is not required, and the invention is suitable for batch production.

The invention discloses a paper based composite light absorption material for efficient photothermal conversion and a preparation method thereof. Carbon black particles in commercial carbon black inkare deposited on a filter paper surface by ultrasonic loading, the preparation method is simple, low in cost, and green and environment-friendly, and a composite light absorption material characterized by broad spectral response range, high photothermal conversion efficiency and strong hydrophilcity can be obtained, is easy for mass production and wide application, enriches the existing photothermal material field, and fills the blank of the technical field. At the same time, by utilizing the efficient photothermal conversion characteristic, the paper based composite light absorption materialprovided by the invention can be applied to seawater desalination, can meet the social requirement for rapid acquisition of purified water, and also provides a new way for photothermal utilization ofsolar energy.

The invention discloses an antimony-base compound thin film solar cell and a manufacturing method of the antimony-base compound thin film solar cell and belongs to the manufacturing field of photoelectric material and thin film solar cells. The problems that in an existing compound thin film solar cell, needed material is little in the earth crust, high in price and toxic to the human body or complex in production technology are solved. The antimony-base compound thin film solar cell comprises a substrate, a back electrode layer, a P-type absorption layer, an N-type buffering layer, an oxide thin film window layer and metal gate electrodes in a sequential deposition mode. The P-type absorption layer is made of CuXSbybetaZ material, wherein beta is S or Se. The material of the P-type absorption layer is selected from high-abundance elements in the earth crust, wherein the material is rich in resource and environmentally friendly because no toxic components are contained, the range of the energy gap of the elements is about 0.5 ev-2.5 ev, the spectral response range is wide, the light absorption coefficient is up to 105 cm-1, and therefore the compound thin film solar battery composed of the material has excellent photovoltaic performance and is environmentally friendly, and low-cost production is expected to be achieved.

The invention discloses a silicon-based photoelectric detector for photoelectric monolithic integration and a preparation method thereof, which relates to a silicon-based photoelectric monolithic integrated circuit. The invention provides the silicon-based photoelectric detector which is completely compatible with the commercial BCD standard technology and is used for photoelectric monolithic integration, and provides the preparation method thereof. The silicon-based photoelectric detector is provided with a P type silicon substrate, a BN+ epitaxial layer, a BP+ epitaxial layer, an N-EPI epitaxial layer, an N-well layer, a P-well layer, a P+ layer, an N+ layer, an Al layer, a field oxide layer, SiO2 insulating medium layers and a Si3N4 surface passivation layer, wherein the P type silicon substrate, the BN+ epitaxial layer, the BP+ epitaxial layer, the N-EPI epitaxial layer, the N-well layer, the P-well layer, the P+ layer and the N+ layer are arranged on the same silicon wafer; the field oxide layer is a silicon oxide layer generated on the surface of the silicon wafer; a metallic aluminum layer is deposited on the surface of the silicon wafer; three SiO2 insulating medium layers are attached to the silicon substrate from bottom to top according to the preparation sequence through the deposition technology; and the Si3N4 surface passivation layer is attached to the SiO2 insulating medium layers through the deposition technology.

The invention discloses a preparation method of a metal-nonmetal-codoped nano-titanium dioxide photocatalyst. The method comprises the following steps of: a, adding modified polyacrylonitrile fibers to TiCl4 solution, standing for 0.1-2h, heating up to 30-80 DEG C, carrying out heat preservation for 1-10h, filtering, washing with distilled water until the solution is neutral, drying to constant weight, thereby obtaining nitrogen-doped modified nano-titanium dioxide; and b, feeding the prepared nitrogen-doped modified nano-titanium dioxide to a metal ion solution, impregnating for 0.1-2h, filtering, and drying to constant weight so as to obtain the product. Compared with the prior art, materials prepared by the method are rapid in dye wastewater degradation speed, free of secondary pollution, simple in preparation process, low in operation cost, firm in combination with fibers, unlikely to drop, easy to recover, and simple to recycle.

The invention discloses a photocatalyst Li2Cu2Ge2O7 with visible light response and a preparation method thereof. The chemical formula of the photocatalyst is Li2Cu2Ge2O7. The invention also discloses a preparation method of the material. The obtained photocatalyst has the advantages of wide spectral response range, high light conversion efficiency, good stability, and the like, and irradiated by visible light, the photocatalyst has the function of decomposing harmful chemical substances and organic biomass and the function of sterilization. Besides, the preparation method is simple, is low in synthesis temperature and cost and is suitable for industrial production and application.

The invention relates to a composite structure silicon-based germanium quantum dot material. The composite structure material comprises a porous silicon substrate and germanium quantum dots growing on the porous silicon substrate. An ultrasonic enhancement method is used for improving the corrosion rate of the silicon substrate and the evenness of holes, and the growing process of magnetron sputtering and later-period annealing is adopted on the aspect of quantum dot growth; the composite structure silicon-based germanium quantum dot material has high photoelectric converting efficiency; the safety of a preparation method is high, operation is easy, and a good industrialization prospect can be achieved.

The invention discloses a quinoxaline-based conjugated polymer, and a preparation method and application thereof. The structural formula of the quinoxaline-based conjugated polymer provided by the present invention is as shown in a formula I. The present invention provides a quinoxaline-based medium-band-gap conjugated polymer material, and the material exhibits perfect complementarity in solar absorption with narrow-band-gap n-type small molecule acceptor materials, has a suitable electron energy level and better charge transport performance, and thus can be applied to polymer solar cell devices as an electron donor material through matching with the narrow-band-gap n-type small molecule acceptor materials. Since the quinoxaline-based conjugated polymer has simple synthesis steps and high yield and the prepared polymer solar cell device has a wide spectral response range, a high open circuit voltage and a high filling factor, the quinoxaline-based conjugated polymer is expected to becommercialized in polymer solar cells.

The invention discloses an In2O3/ZnFe2O4 nanometer heterojunction composite photocatalytic material and a preparation method thereof and belongs to the technical fields of photocatalytic materials and environmental pollution improvement. The preparation method comprises the steps of firstly, preparing monodispersed In2O3 nanospheres through a hydro-thermal method; then adding ferric acetylacetonate, zinc nitrate and terephthalic acid to a mixed solution of absolute ethyl alcohol and N, N-dimethyl formamide, conducting sufficient stirring, then adding the In2O3 nanospheres to the mixture, and finally conducting a solvothermal reaction, centrifugation, drying and calcining, so that the nanometer heterojunction composite photocatalytic material is obtained finally. By means of obtained In2O3/ZnFe2O4 nanometer heterojunction, the spectrum response range of In2O3 is enlarged, furthermore, separation efficiency of photogenerated charges is improved, and good application value and prospect are achieved in the field of photocatalytic degradation of organic pollutants. Raw materials used in the preparation method are low in price and easy to obtain, the reaction condition is easy to control, operation is simple, the equipment requirement is low, and environmental protection is achieved.

The invention relates to a preparation method of a surface hydroxylation titanium oxide/graphene visible light catalysis material. According to the method, butyl titanate, graphene and nitrate serve as raw materials, organic electrolyte serves as surfactant, and the surface hydroxylation graphene/TiO<2> catalysis material is obtained through the steps of sol application, thermostatic water bath, ultraviolet irradiation, microwave irradiation, washing, drying and the like. The preparation method has the greatest advantage that ultraviolet pre-oxidation and microwave irradiation are utilized for achieving surface hydroxylation, the preparation process is simple, the energy consumption is low, rapid synthesis can be achieved, and large-scale production is easy to achieve; meanwhile, more defects such as oxygen vacancy and Ti<3+> are caused to a composite by surface hydroxylation, surface activity is increased, forbidden bandwidth of the composite is decreased, the spectral response range is widened, the obtained graphene/TiO<2> catalysis material is great in absorption performance and high in activity, durability and antibacterial performance, and the preparation method has a wide application prospect in fields such as sewage treatment, photocatalytic water splitting, air purification, solar cells, antibacterial materials and the like.