Composite structure silicon-based germanium quantum dot material and preparation method and application thereof

A composite structure and quantum dot technology, which is applied in metal material coating process, ion implantation plating, final product manufacturing, etc., can solve the problems of limiting the application of quantum dot materials, low density of quantum dots, complicated process flow, etc., to achieve Improve photoelectric conversion efficiency, simple operation, and improve the effect of preparation efficiency

Active Publication Date: 2015-02-25
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For the preparation method of quantum dots, there are currently problems such as large size of quantum dots, low density

Method used

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  • Composite structure silicon-based germanium quantum dot material and preparation method and application thereof
  • Composite structure silicon-based germanium quantum dot material and preparation method and application thereof
  • Composite structure silicon-based germanium quantum dot material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] A method for preparing a silicon-based germanium quantum dot composite structure material comprises the steps of:

[0078] (1) Provide a silicon substrate and carry out the cleaning steps: ultrasonically clean with tap water for 3 minutes, deionized water for 5 minutes, and ethanol and / or acetone for 10 minutes; and repeat the cleaning steps twice to obtain a clean silicon substrate;

[0079] (2) Place the cleaned silicon substrate in a sodium hydroxide solution with a concentration of 5wt%, apply 30W ultrasonic, and corrode for 70min to prepare a porous silicon substrate; the morphology of the porous silicon substrate is as follows figure 2 ( figure 2It is the AFM image of the porous silicon substrate obtained in step 2 of Example 1, wherein (a) is a plan view; (b) is a perspective view);

[0080] (3) Using the germanium target as the target material, magnetron sputtering is performed, the radio frequency power is 200W, the Ar gas flow rate is 30sccm, and the deposi...

Embodiment 2

[0085] A method for preparing a silicon-based germanium quantum dot composite structure material comprises the steps of:

[0086] (1) Provide a silicon substrate, and carry out the cleaning steps: ultrasonic cleaning with tap water for 5 minutes, ultrasonic cleaning with deionized water for 3 minutes, and ultrasonic cleaning with ethanol and / or acetone for 5 minutes; and repeat the cleaning steps 5 times; obtain a clean silicon substrate;

[0087] (2) Put the cleaned silicon substrate in a sodium hydroxide solution with a concentration of 30wt%, and corrode it for 120 minutes to obtain a prepared porous silicon substrate;

[0088] (3) Using the germanium target as the target material, magnetron sputtering is performed, the radio frequency power is 300W, the Ar gas flow rate is 50sccm, and the deposition time is 60s; a 1nm germanium film is deposited on the porous silicon substrate;

[0089] (4) Anneal the porous silicon substrate deposited with a germanium thin film at 500°C f...

Embodiment 3

[0092] A method for preparing a silicon-based germanium quantum dot composite structure material comprises the steps of:

[0093] (1) Provide a silicon substrate, and perform the cleaning steps: ultrasonic cleaning with tap water for 4 minutes, ultrasonic cleaning with deionized water for 4 minutes, and ultrasonic cleaning with ethanol and / or acetone for 9 minutes; and repeat the cleaning step once; obtain a clean silicon substrate;

[0094] (2) Put the cleaned silicon substrate in a sodium hydroxide solution with a concentration of 20wt%, apply 20W ultrasound, and corrode for 10min to obtain a prepared porous silicon substrate;

[0095] (3) Using a germanium target with a purity of 99.99% as the target material, magnetron sputtering is performed, the radio frequency power is 80W, the Ar gas flow rate is 10sccm, and the deposition time is 1200s; a 15nm germanium film is deposited on the porous silicon substrate;

[0096] (4) Anneal the porous silicon substrate deposited with t...

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Abstract

The invention relates to a composite structure silicon-based germanium quantum dot material. The composite structure material comprises a porous silicon substrate and germanium quantum dots growing on the porous silicon substrate. An ultrasonic enhancement method is used for improving the corrosion rate of the silicon substrate and the evenness of holes, and the growing process of magnetron sputtering and later-period annealing is adopted on the aspect of quantum dot growth; the composite structure silicon-based germanium quantum dot material has high photoelectric converting efficiency; the safety of a preparation method is high, operation is easy, and a good industrialization prospect can be achieved.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and in particular relates to a silicon-based germanium quantum dot composite structure material, its preparation method and application. Background technique [0002] Quantum Dot (Quantum Dot) is a quasi-zero-dimensional nanomaterial composed of a small number of atoms. Roughly speaking, the size of the three dimensions of quantum dots are all below 100nm, and the appearance is just like a very small point. The movement of electrons in it is restricted in all directions, so the quantum confinement effect (Quantum Confinement Effect) is particularly significant. . [0003] Preparation of high-efficiency solar cells is one of the effective ways to solve the current energy crisis. There are two main ways to improve the conversion efficiency of solar cells: the first is to prepare "light-trapping" structures such as cones or holes in the cell to increase the optical path of light t...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/18C23C14/35
CPCC23C14/35H01L31/035218H01L31/18Y02P70/50
Inventor 李振军白冰杨晓霞刘明举李娟胡海王小伟戴庆裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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