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8253 results about "Silicon based" patented technology

Monolithically integrated light emitting devices

Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device including an element including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one III-V light-emitting device including an active region including at least a portion of the second monocrystalline semiconductor layer.
Owner:MASSACHUSETTS INST OF TECH

Methods to fabricate MOSFET devices using selective deposition process

In one embodiment, a method for fabricating a silicon-based device on a substrate surface is provided which includes depositing a first silicon-containing layer by exposing the substrate surface to a first process gas comprising Cl2SiH2, a germanium source, a first etchant and a carrier gas and depositing a second silicon-containing layer by exposing the first silicon-containing layer to a second process gas comprising SiH4 and a second etchant. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing a first silicon-containing layer on the substrate surface with a first germanium concentration of about 15 at % or more. The method further provides depositing on the first silicon-containing layer a second silicon-containing layer wherein a second germanium concentration of about 15 at % or less, exposing the substrate surface to air to form a native oxide layer, removing the native oxide layer to expose the second silicon-containing layer, and depositing a third silicon-containing layer on the second silicon-containing layer. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing epitaxially a first silicon-containing layer on the substrate surface with a first lattice strain, and depositing epitaxially on the first silicon-containing layer a second silicon-containing layer with a second lattice strain greater than the first lattice strain.
Owner:APPLIED MATERIALS INC

Monolithically integrated light emitting devices

Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device including an element including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one III-V light-emitting device including an active region including at least a portion of the second monocrystalline semiconductor layer.
Owner:MASSACHUSETTS INST OF TECH

Monolithically integrated silicon and III-V electronics

Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure also includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device comprising an element including at least a portion of the monocrystalline silicon layer. The structure includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure also includes at least one III-V electronic device comprising an element including at least a portion of the second monocrystalline semiconductor layer.
Owner:MASSACHUSETTS INST OF TECH
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