449 results about "Silicon based" patented technology

This application relates to a silicon-carbon composite anode material, its preparation method, and its application. The silicon-carbon composite anode material has a core-shell structure, comprising, from the inside out: a core, which is a silicon-carbon composite matrix; an intermediate shell, which is a rigid tungsten nitride layer covering the outer surface of the silicon-carbon composite matrix; and an outer shell, which is a flexible conductive carbon layer covering the outer surface of the intermediate shell. This application proposes using tungsten nitride (W2N) as the inner rigid coating material to form a high-strength, conductive W2N protective layer on the surface of the silicon-carbon composite material, and further coating it with a flexible conductive carbon layer, constructing a "hard shell-soft layer" dual-layer synergistic protection structure, thereby systematically alleviating the key technical challenges of the aforementioned silicon-based anodes.

A negative electrode active material, a secondary battery and an electrical apparatus. The negative electrode active material includes a silicon-carbon composite material, where the silicon-carbon composite material includes a first silicon-carbon composite particle and a second silicon-carbon composite particle; the first silicon-carbon composite particle includes a first carbon matrix having a pore structure and a first silicon-based material arranged in the pore structure of the first carbon matrix; the second silicon-carbon composite particle includes a second carbon matrix having a pore structure and a second silicon-based material arranged in the pore structure of the second carbon matrix; and a mass percentage content of a silicon element in the first silicon-carbon composite particle is greater than a mass percentage content of a silicon element in the second silicon-carbon composite particle.

This invention provides a battery. The battery includes a negative electrode sheet, which includes a negative electrode current collector and a negative electrode active material layer disposed on at least one surface of the negative electrode current collector. The negative electrode active material layer includes a first negative electrode active material layer and a second negative electrode active material layer, with the first negative electrode active material layer located between the negative electrode current collector and the second negative electrode active material layer. The first negative electrode active material layer includes a carbon-based active material, and the second negative electrode active material layer includes a silicon-based active material. The particle size Dv90 of the silicon-based active material is smaller than the thickness Bμm of the first negative electrode active material layer. The negative electrode current collector includes a copper substrate and a protective layer disposed on at least one surface of the copper substrate. The thickness Anm of the protective layer satisfies: 20≤A≤100. The negative electrode sheet satisfies: 0.5≤A / B≤6. The battery provided by this invention has a low interface resistance of the negative electrode sheet, a low degree of copper deposition, good structural stability of the negative electrode current collector, and high cycle performance.

Embodiments of the present application provide a silicon-based composite negative electrode material, a preparation method thereof, a negative electrode sheet and a secondary battery. The preparation method comprises: preparing a precursor fiber by electrospinning a precursor dispersion liquid containing a first silicon source, a second silicon source, a first carbon source and a second carbon source; and obtaining the silicon-based composite negative electrode material by heat treatment of the precursor fiber; the first silicon source is silicon particles; the second silicon source carries one or more of a silicon halogen bond, a silicon oxygen bond and a silicon hydrogen bond in a molecular structure; the first carbon source is a high molecular compound; and the second carbon source is an oxygen-containing small molecule organic compound. The present application adds two silicon sources and oxygen-containing group organic compounds to the spinning precursor dispersion liquid, so as to improve the structural stability and electrochemical performance of the silicon-based negative electrode material, thereby achieving the technical effects of inhibiting volume expansion while ensuring high capacity, significantly improving the cycle stability and safety, and simplifying the preparation process and reducing the cost.

This invention relates to the field of circuits, specifically disclosing a semi-bridgeless PFC circuit, a power supply system, a computer, and its operating method. The circuit eliminates the two diodes connected to the reference potential in a traditional rectifier bridge, using a first switching transistor, a second switching transistor, their parallel diodes, and an inductor to form a current loop, reducing conduction and switching losses. The source of the switching transistor shares a common ground with the negative terminal of the DC output, eliminating the need for isolation between drive and voltage sampling, thus simplifying the design. Furthermore, the semi-bridgeless PFC circuit can integrate an intelligent enable control module. This module continuously monitors the power stage status and controls the release of the original drive signal based on safety logic, achieving proactive safety protection. This solution improves efficiency and reliability while using common silicon-based devices, and also reduces the complexity and cost of existing power-saving circuits.

This application provides a secondary battery and an electrical device. The secondary battery includes a positive electrode and a negative electrode. The negative electrode active layer of the negative electrode includes a silicon-based material, and the positive electrode active layer of the positive electrode includes a lithium transition metal oxide and a lithium-containing phosphate with an olivine structure. The lithium-containing phosphate includes secondary particles I formed from primary particles I. The secondary particles I have pores between them, giving them a porous structure. In the cross-section of the secondary particles I, the area filled by the primary particles I accounts for 60%-85%. The secondary battery prepared in this application balances low-temperature performance and energy density.

A semiconductor device comprises multiple nanostructures, a first epitaxial structure, a second epitaxial structure, a gate structure, multiple spacers, and multiple silicon-based cover layers. The multiple nanostructures can be stacked on top of each other and spaced apart. The first epitaxial structure and a second epitaxial structure can each be coupled to the ends of each of the multiple nanostructures. The gate structure wraps around each of the multiple nanostructures. Each of the multiple spacers can be positioned between a corresponding region of the gate structure and the first or second epitaxial structure. Each of the silicon-based cover layers can be positioned above or below a corresponding of the multiple spacers.

A lithium-ion battery of the present disclosure includes an anode active material layer, a separator layer, and a cathode active material layer in the stated order, and the anode active material layer, the separator layer, and the cathode active material layer are impregnated with an electrolyte solution. The anode active material layer contains a silicon-based anode active material. The electrolyte solution contains (A) lithium bis(fluorosulfonyl)imide and (B) N,N-dimethyltrifluoromethanesulfonamide. A molar ratio of a component (A) to a component (B) is 1 / 16 or more and 1 / 4 or less.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

This invention relates to an epitaxial wafer structure and its fabrication method. The epitaxial wafer structure includes: a silicon substrate layer; a nucleation layer disposed on the silicon substrate layer, wherein the nucleation layer includes an aluminum nitride layer; a buffer layer disposed on the nucleation layer, wherein the buffer layer includes an indium-doped aluminum gallium nitride layer; a gallium nitride channel layer disposed on the buffer layer; and an aluminum gallium nitride barrier layer disposed above the gallium nitride channel layer. This embodiment, by doping the buffer layer with indium, prevents substrate loss in the epitaxial wafer structure, reduces defects in the epitaxial layer, and improves the quality of the epitaxial wafer structure.

An anode active material according to an example of the present disclosure comprises: a first active material comprising a silicon-based material; and a second active material comprising a carbon-based material, wherein the second active material comprises at least one of the first carbon-based material and the second carbon-based material, and an expansion rate over the total length or an expansion rate over the total width of an anode comprising the anode active material satisfying the following equation 3: a1 = k1 * x / y a2 = k2 * x / y , where a1 denotes the expansion rate over the total length, a2 denotes the expansion rate over the total width, k1 and k2 denote real numbers, and x denotes a weight of the first carbon-based material and y denotes a weight of the second carbon-based material.

A display apparatus includes: a substrate comprising a display area and a peripheral area; a light-emitting diode in the display area on a front surface of the substrate; a driving transistor in the display area, electrically connected to the light-emitting diode, and comprising a silicon-based semiconductor layer; a switching transistor in the display area and configured to transmit a data voltage to the driving transistor; a compensation transistor in the display area, configured to diode-connect the driving transistor, and comprising an oxide-based semiconductor layer; a gate driving circuit in the peripheral area and electrically connected to the compensation transistor; and a first lower layer in the peripheral area and interposed between the substrate and the gate driving circuit.

A semiconductor device includes a semiconductor component and a silicon-based passive component. The silicon-based passive component is stacked on the semiconductor component in a thickness direction of the semiconductor component.

An optical module includes a hybrid integrated optical chip electrically connected to a circuit board and configured to modulate and generate an optical signal. The hybrid integrated optical chip includes: a Si-based platform including a substrate layer, a cladding layer located above the substrate layer and embedded with a first heating part and a second heating part, and a Si waveguide layer located between the substrate layer and the cladding layer; an InP light-emitting region disposed on the Si-based platform, with multiple lasers arranged side by side; an InP modulation region located on a light output path of the InP light-emitting region, where a plurality of InP modulators are arranged side by side in the InP modulation region; each InP modulator includes a first modulation waveguide and a second modulation waveguide optically coupled to the lasers and perform signal modulation to generate an optical signal.

This invention relates to the field of inverter technology, and particularly to a heterogeneous power device hybrid inverter and its space vector modulation method. The heterogeneous power device hybrid inverter provided in this invention includes a first constant current source, a second constant current source, a main power inverter module, a secondary power inverter module, and a capacitive reactance module. The first constant current source is connected to the main power inverter module to provide current to the main power inverter module. The main power inverter module includes multiple silicon-based insulated-gate bipolar transistors (SBMTs) as main switching transistors, and the main power inverter module is connected to the capacitive reactance module. The second constant current source is connected to the secondary power inverter module to provide current to the secondary power inverter module. The secondary power inverter module includes multiple silicon carbide-based metal-oxide-semiconductor field-effect transistors (MOSFETs) as secondary switching transistors, and the secondary power inverter module is connected to the capacitive reactance module. The heterogeneous power device hybrid inverter and its space vector modulation method provided by this invention can balance high inverter frequency and low switching losses.

This application discloses a negative curvature polycyclic aromatic hydrocarbon containing an eight-membered ring, its synthesis method, and its application, belonging to the field of organic synthesis. The synthesis method uses a haloacenaphthene derivative as a starting material. First, a tetrahalogenated key intermediate containing an eight-membered ring is constructed via a titanium tetrachloride-catalyzed cyclization tetramerization reaction. Subsequently, this intermediate undergoes a cyclization coupling reaction with an alkyne compound in the presence of a palladium catalyst, silver salt, and phosphine ligand to generate a negative curvature polycyclic aromatic hydrocarbon containing an eight-membered ring. The synthesis method of this application avoids multi-step precursor synthesis, resulting in a concise process. It allows for the flexible introduction of functional groups such as trifluoromethyl and silyl groups, improving the solubility and processability of the material. The obtained product exhibits a non-planar configuration, a narrow optical band gap, and excellent electron transport properties, making it suitable for applications... n Applications include semiconductors, chiral optoelectronic materials, and nano-carbon materials.

Molybdenum-containing films are deposited on semiconductor substrates at relatively low temperatures of between about 100 and about 500 ºC, such as between about 200 and about 450 ºC. For example, molybdenum metal can be deposited at this temperature on a substrate having exposed metal and exposed dielectric in a substantially non-selective manner. In one implementation, a substrate having a recessed feature is provided, where the recessed feature has an exposed dielectric on the sidewalls and an exposed metal on the bottom. The substrate is exposed to a molybdenum-containing precursor, a reducing agent, and a silicon-containing reagent, to thereby reduce the molybdenum-containing precursor and form a molybdenum-containing layer that includes metallic molybdenum. The use of the silicon-containing reactant leads to a reduction in on-metal / on-dielectric selectivity of molybdenum deposition.

The application provides a low-strain nano silicon-carbon-based negative electrode material and a preparation method and a solid-state battery thereof, and relates to the technical field of lithium batteries. The application uses a bio-based material and a porous template material, carries out pretreatment on the materials, composites the materials at a certain ratio, calcines the precursor, carries out multiple washing and separation on the product, and prepares a composite nano silicon-carbon negative electrode material. The bio-based material provides rich conductive paths and also plays a good supporting role for the electrode material. The porous template material makes the composite material have a good pore structure, can provide more electrochemical reaction sites and lithium storage space, and also makes the electrode material have better stress buffering capacity. The volume expansion problem of the silicon-based material is significantly improved in cooperation of the two, and the nano silicon-carbon electrode material has high capacity and good rate performance and cycle performance.

This invention provides a silicon-based negative electrode slurry, its preparation method, a negative electrode sheet, and a battery. The preparation method includes: first mixing silicon-based materials, graphite materials, a zero-dimensional conductive agent, and a dispersant to obtain a first mixture; second mixing the first mixture, a first portion of a one-dimensional conductive agent, and a first portion of a first binder to obtain a second mixture; third mixing the second mixture with a solvent to obtain a third mixture; fourth mixing the third mixture, a second portion of the one-dimensional conductive agent, a second portion of the first binder, and a solvent to obtain a fourth mixture; and fifth mixing the fourth mixture, a third portion of the one-dimensional conductive agent, and a third portion of the first binder to obtain the silicon-based negative electrode slurry. This invention, by adding the one-dimensional conductive agent and the first binder in three stages, ensures material dispersion, promotes the formation of a stable three-dimensional network structure, improves the peeling force of the negative electrode sheet, and resolves the contradiction between homogenization and low damage.

This invention discloses a silicon-based anode binder for lithium-ion batteries and its preparation method, relating to the field of silicon-based anode technology. The method includes first ring-opening sulfonation of polyetheramine with 1,3-propanesulfonyl lactone in an aqueous phase to obtain sulfonated polyetheramine; then, polyacrylic acid is activated by EDC·HCl and NHS and then amidated and grafted onto the sulfonated polyetheramine to obtain sulfonated polyetheramine-grafted polyacrylic acid; finally, the aqueous solution of this graft is in-situ coordinated with 2-methylimidazole and zinc nitrate to generate ZIF-8 nanoparticles, and then succinic acid and choline chloride are added for regulation to obtain the binder. This invention achieves dual modification through molecular grafting of flexible sulfonated polyether segments and in-situ construction of a three-dimensional ZIF-8 conductive network, utilizing succinic acid and choline chloride to eliminate competitive coordination of active groups, significantly improving ionic conductivity and stabilizing the electrode structure.

This application provides a secondary battery and an electrical device. The secondary battery includes a negative electrode sheet, which includes a negative current collector and a negative electrode film layer located on at least one side of the negative current collector. The negative electrode film layer includes a first negative electrode film layer and a second negative electrode film layer, with the first negative electrode film layer located between the negative current collector and the second negative electrode film layer. The first negative electrode film layer includes a first negative electrode active material, which includes a first silicon-based material. The second negative electrode film layer includes a second negative electrode active material, which includes a second silicon-based material. The average particle size of the first silicon-based material is smaller than the average particle size of the second silicon-based material. The mass percentage of silicon in the first negative electrode film layer is M1, and the mass percentage of silicon in the second negative electrode film layer is M2. M1 and M2 satisfy the following relationship: M2 - M1 = 16% to 45%. The secondary battery of this application has excellent fast-charging performance and cycle performance.

The utility model provides a novel silicon base MOSFET super junction structure relates to the field of silicon base MOSFET, including silicon base MOSFET body, the lower surface of silicon base MOSFET body is connected with the conductive type epitaxial layer, the outside of silicon base MOSFET body is equipped with the heat dissipation assembly for cooling structure, the inside of silicon base MOSFET body is equipped with the super junction assembly for silicon base MOSFET super junction, the heat dissipation assembly includes the encapsulation board, the encapsulation board is fixed in the lateral wall of silicon base MOSFET body, the lower end of silicon base MOSFET body is connected with N cylinder. The utility model discloses a heat dissipation assembly, the heat absorption end of heat pipe is connected with N cylinder and P cylinder, makes heat pipe to pass through the evaporation and condensation of liquid to transfer heat, and then effectively carries out the heat dissipation to the silicon base MOSFET super junction structure, reduces the condition of the leakage current increase of high temperature occurrence, improves the long-term reliability of device.

The application discloses a bionic petal-shaped elastomer structure integrated with a silicon-based piezoresistive strain gauge array and belongs to the technical field of six-dimensional force sensor core structures. In order to solve the technical problems of traditional six-dimensional force sensors, such as serious elastomechanical coupling, low precision of artificial patching, poor batch consistency, large temperature drift error and insufficient flexible adaptability, the application adopts a symmetrical bionic petal flexible elastomer structure, realizes uniform dispersion of six-dimensional load through elastic arms arranged uniformly in a multi-petal ring, reduces dimensional coupling interference from the source of structure, simultaneously adopts a silicon-based piezoresistive strain gauge array prepared by a MEMS process, replaces a traditional artificial patching structure through an embedded integration process, completely eliminates assembly error, improves strain detection precision and structural consistency, matches a silicon-based temperature compensation module and a flexible insulation packaging structure of the same material, effectively offsets temperature drift error and guarantees the working stability in high and low temperature environments. The application realizes integrated integration of an elastic bearing structure and a high-precision sensing array, has the advantages of low coupling, high sensitivity, high consistency, good temperature resistance and strong flexible adaptability, can significantly improve the measurement precision, dynamic response speed and environmental adaptability of the six-dimensional force sensor and is widely applicable to high-precision force sensing scenes such as flexible robots, human-computer interaction, bionic prostheses and precise industrial assembly and has a wide application prospect.

Lithium-ion battery, characterized in that it consists of a cathode, an anode and a non-aqueous electrolyte; wherein the cathode comprises a cathode material layer containing an active cathode material, wherein the active cathode material comprises a compound represented by formula (A): Li x Ni a Co b M' 1-a-b O 2-y A y Formula (A) where in formula (A) -0.1 ≤ x ≤ 0.2, 0.8 ≤ a < 1, 0 ≤ b < 0.2, 0.8 ≤ a + b < 1, 0 ≤ y < 0.2 hold; where M' comprises one or both of the elements Mn or Al and zero, one or more of the elements Sr, Mg, Ti, Ca, Zr, Zn, Si, Fe, B, Ga, Cr, W, V, Nb and Ce; where A comprises one or more of S, N, F, B, Cl, Br and I; wherein the anode comprises an anode material layer containing an active anode material, wherein the active anode material comprises a silicon-based material; wherein the non-aqueous electrolyte comprises a lithium salt and an organic solvent, wherein the organic solvent comprises cyclic carbonate, and wherein the cyclic carbonate comprises fluorinated ethylene carbonate and propylene carbonate; where the lithium-ion battery meets the following conditions: 0.2 ≤ S / F ≤ 2 ,0 ,2 ≤ P / F ≤ 3 ,5 and 3 ≤ S ≤ 15 ,2 ≤ F ≤ 15 ,2 ≤ P ≤ 25 , 15 ≤ C ≤ 40; where S denotes the mass fraction of silicon in the anode material layer, expressed in wt.%; where F denotes the mass fraction of fluorinated ethylene carbonate in the non-aqueous electrolyte, expressed in wt.%; where P denotes the mass fraction of propylene carbonate in the non-aqueous electrolyte, expressed in wt.%; where C denotes the mass fraction of cyclic carbonate in the non-aqueous electrolyte, expressed in wt.%.

The negative active material according to the embodiment of the present disclosure includes: a first active material including a silicon-based material; and a second active material including a carbon-based material, wherein the second active material includes at least one of a first carbon-based material and a second carbon-based material, and a total length expansion rate or a total width expansion rate of a negative electrode including the negative active material satisfies the following expression 3: [Expression 3] a1 = k1 × x / y a2 = k2 × x / y, wherein a1 denotes the total length expansion rate, a2 denotes the total width expansion rate, k1 and k2 denote real numbers, x denotes a weight of the first carbon-based material, and y denotes a weight of the second carbon-based material.

The application provides a solar cell and a preparation method thereof. The solar cell comprises a silicon base, an intrinsic amorphous silicon layer, a doped amorphous silicon layer, an ITO thin film and a metal electrode which are sequentially arranged on one side of the silicon base. The ITO thin film comprises at least two ITO films, and the grain sizes of the different ITO films are different. Compared with the prior art, the ITO thin film of the application comprises at least two film layers with different grain sizes, so that the IV performance of the solar cell is better, and the product reliability is further guaranteed.

This invention discloses a method for fabricating a high-efficiency Micro-OLED structure, belonging to the field of OLED display technology. Addressing the problems of insufficient brightness, severe large-angle scattering light loss, and bottlenecks in improving light extraction efficiency in existing silicon-based Micro-OLEDs, this invention fabricates a silicon dioxide / silicon nitride bilayer dielectric layer on a CMOS substrate. Utilizing the difference in etching rates between the two layers, a parabolic reflective bowl anode is fabricated. The pixel definition layer, organic light-emitting layer, thin-film encapsulation layer, color filter layer, and planarization layer are then fabricated sequentially. Finally, a microlens array coaxial with the reflective bowl is fabricated, forming a synergistic light-gathering system. This invention can significantly reduce internal light loss in the device, significantly improve peak brightness and light extraction efficiency, is compatible with existing mass production processes, and meets the high-brightness application requirements of AR / VR near-eye displays.