5278 results about "Silicon based" patented technology

A lithium secondary battery includes a positive electrode, a negative electrode, a separator, and an electrolyte, wherein the positive electrode includes a positive electrode active material layer having a positive electrode active material containing an overlithiated manganese-based oxide represented by Formula 1 below, and the negative electrode includes a negative electrode active material layer having a silicon-based negative electrode active materialLiaNibCocMndMeO2  [Formula 1]wherein, M is at least one selected from the group consisting of Al, B, Co, W, Mg, V, Ti, Zn, Ga, In, Ru, Nb, Sn, Sr, and Zr, and 1≤a, 0≤b≤0.5, 0≤c≤0.1, 0.5≤d<1.0, and 0≤e≤0.2, and. Preferably, in the Formula 1, 1.1≤a≤1.5, 0.1≤b≤0.4, 0≤c≤0.05, 0.5≤d≤0.80, and 0≤e≤0.1.

The invention provides a lithium ion battery silicon-based negative electrode material as well as a preparation method and application thereof, and relates to the technical field of lithium ion battery negative electrode materials. The preparation method provided by the invention comprises the following steps: stirring and mixing a surface-activated silicon-carbon matrix in an organic solution in which a polymer is dissolved, separating and drying to obtain a composite matrix; mixing the composite matrix in an inorganic lithium salt solution, evaporating the solvent to dryness, and carbonizing at 300-400 DEG C to obtain a composite intermediate; reducing the composite intermediate in a hydrogen atmosphere at 200-300 DEG C to obtain a negative electrode intermediate; and stirring and mixing the negative electrode intermediate in the organic solution, separating and drying, and carbonizing at 700-800 DEG C to obtain the silicon-based negative electrode material of the lithium ion battery. The prepared negative electrode material has relatively high structural stability, and after the negative electrode material is applied to the lithium ion battery, the capacity performance and the cycling stability of the lithium ion battery can be remarkably improved.

The invention discloses a raw material of a near-zero shrinkage silicon-based ceramic core and a preparation method thereof, the raw material of the ceramic core comprises refractory material powder, zirconium silicate powder and metal zirconium powder, and the refractory material powder, the zirconium silicate powder and the metal zirconium powder are mixed according to the proportion to form the raw material of the ceramic core; ceramic core raw materials are added into liquid paraffin to form ceramic core slurry, the ceramic core slurry is used for obtaining a ceramic core biscuit through a hot-pressing injection molding method, and the ceramic core biscuit is subjected to powder burying sintering to obtain the ceramic core. Volume shrinkage generated in the sintering process of the ceramic core is made up through in-situ synthesis oxidation expansion of the metal zirconium powder, meanwhile, shrinkage of the ceramic core can be made up through generated zirconium dioxide due to the phase change effect, near-zero shrinkage of the silicon-based ceramic core in the sintering process is achieved under the dual effects of in-situ oxidation and the phase change effect, and the silicon-based ceramic core has the good sintering performance. Meanwhile, the generated zirconium dioxide improves the room-temperature bending strength and the high-temperature bending strength of the ceramic core.

The invention discloses a method for improving the heat dissipation performance of an AlGaInP red light Micro LED chip. The method comprises the following steps: S1, preparing an epitaxial structure: processing a substrate and a buffer layer, growing an etching barrier layer and an ohmic contact layer, and carrying out stacking epitaxy on a functional layer; s2, patterning the silicon-based substrate: preparing a dielectric layer and a metal structure; s3, diamond ohmic contact layer integration: processing a p-type conductive diamond film layer, and carrying out metal reflection and bonding; s4, removing the substrate and forming an n-type structure: stripping the substrate to be in n-type contact; s5, back-end process integration: preparing an electrode and an optical structure; according to the invention, the heat dissipation performance of the chip is significantly improved; the series resistance is reduced by 30%-50%; the resistivity of the p / n type diamond ohmic contact layer is reduced by 1-2 orders of magnitude compared with ITO; gaAs material light absorption and metal shading are avoided, and the red light transmittance is improved from 75% to more than 90% by combining with the micro lens array; the method is compatible with existing MOCVD, CVD and photoetching processes, large-scale production of wafers of 2-12 inches can be achieved, and the manufacturing cost is reduced.

The invention relates to the technical field of spectrum modulation, in particular to a miniature spectrum modulation system and a preparation method thereof.The miniature spectrum modulation system comprises a modulation layer and a substrate which are sequentially connected in the longitudinal direction, the modulation layer is provided with nine modulation channels which are marked as C1, C2, C3, C4, C5, C6, C7, C8 and C9 respectively, the nine modulation channels are arranged in a 3 * 3 arrangement mode, and the width of the modulation channels is larger than that of the substrate. Micro lenses are arranged on the upper surfaces of part of the modulation channels; the nine modulation channels are transparent layers, semitransparent layers or opaque layers; the nine modulation channels are in a square shape or a square-like shape. The miniature spectrum modulation system and the bottom silicon-based detector are jointly controlled through the shape of the modulation channel, the modulation channel is arranged to be in a special shape, then part of pixels are exposed, the spectrum modulation curve of the miniature spectrum modulation system is controlled, and a better spectrum imaging effect is achieved.

The invention relates to a silicon-based negative electrode material for a sulfide solid-state lithium battery, which is prepared by the following method: mixing silicon powder and sulfide solid-state electrolyte, performing ball milling, adding a lithium alloy lithium supplement agent, and continuing ball milling to obtain mixed powder; and uniformly mixing the mixed powder with the metal nanoparticles to obtain the silicon-based negative electrode material, so that the electronic conductivity and the ionic conductivity of a silicon negative electrode can be improved at the same time. The lithium supplement agent selects a lithium alloy material, has good compatibility with sulfide electrolyte, and can effectively inhibit the volume expansion coefficient of a silicon negative electrode after being added; and secondly, along with the synchronous improvement of the electron conductivity and the ion conductivity of the negative electrode, the multiplying power and the coulombic efficiency of the total battery can be comprehensively improved, and the stability limitation of the negative electrode interface is improved.

A lithium-ion battery having excellent high-temperature storage and high-temperature cycling performance. The lithium-ion battery comprises a positive electrode, a negative electrode, and a non-aqueous electrolyte solution. The negative electrode comprises a negative electrode material layer containing a silicon-based material. The non-aqueous electrolyte solution comprises a lithium salt, an organic solvent, and an additive, the organic solvent comprising fluoroethylene carbonate, and the additive comprising a silane compound containing at least one carbon-carbon double bond. The lithium-ion battery satisfies the following conditions: 5≤(S*R) / (F*T)≤35, 5≤f≤15, 1.4≤R≤1.68, 9≤S≤18, and 0.01≤T≤0.5. According to the lithium-ion battery, the mass percentage content of the organic solvent and the additive in the non-aqueous electrolyte solution are controlled, and the mass percentage content of elemental silicon in the negative electrode material layer is controlled and the compaction density of the negative electrode material layer is controlled to be within a certain range, such that the lithium-ion battery has excellent high-temperature storage performance and an excellent high-temperature cycle life, while also taking into account high energy density.

The invention discloses a multifunctional interlayer modified silicon-based nanowire photoelectric cathode, which comprises a p-Si substrate layer, a nanowire morphology layer, a CdS layer and a MoS2 cocatalyst layer, the preparation method comprises the following steps: (1) cleaning the p-Si substrate, and blow-drying the p-Si substrate for later use; (2) depositing in a first deposition solution to prepare a p-Si substrate with silver particles adsorbed on the surface; (3) etching in an etching solution, and forming a nanowire structure on the p-Si substrate; (4) placing the nanowire structure in a second deposition solution for deposition, and forming a CdS layer on the nanowire structure; and (5) taking the p-Si substrate treated in the step (4) as a working electrode, and depositing in an electro-deposition solution to prepare the silicon-based nanowire photoelectric cathode. The CdS layer and the MoS2 co-catalyst layer in the photoelectric cathode reduce the lattice mismatch problem caused by direct loading of the CdS layer and the MoS2 co-catalyst layer, and meanwhile, the CdS layer and the MoS2 co-catalyst layer and the silicon substrate form a heterogeneous pn junction structure, and the photoelectrochemical performance is remarkably improved through a multi-layer synergistic effect.

The invention relates to the technical field of solar cells, in particular to a silicon-based heterojunction solar cell and a preparation method thereof. The embodiment of the invention provides a silicon-based heterojunction solar cell which comprises a silicon substrate, a first passivation layer, an N-type doping layer and a first transparent electrode which are sequentially arranged in the first direction, and the first direction is the direction, pointing to the first transparent electrode from the silicon substrate, in the thickness direction of the silicon substrate; the first passivation layer comprises a plurality of sub-layers which are sequentially arranged along the first direction: an intrinsic oxygen-doped amorphous silicon layer and an N-surface intrinsic amorphous silicon layer; and along the first direction, the refractive index of the intrinsic oxygen-doped amorphous silicon layer is gradually increased. According to the embodiment of the invention, passivation can be ensured, the conductivity can be improved, and the open-circuit voltage and the fill factor can be effectively improved.

The invention provides a negative plate and a battery. The negative plate comprises a negative current collector and a coating, and the coating is divided into an inner layer and an outer layer; the inner layer is close to the surface of the negative current collector and the outer layer is away from the surface of the negative current collector; the first negative electrode active substance of the inner layer comprises a silicon-based negative electrode material, and the silicon-based negative electrode material comprises at least one of silicon oxide, silicon carbide, nano silicon and silicon alloy. The second negative electrode active material of the outer layer comprises a carbon negative electrode material, and the carbon negative electrode material comprises at least one of natural graphite, artificial graphite, hard carbon, soft carbon, mesocarbon microbeads and graphene. By adopting the specific double-layer active material layer structure, the performance of the negative electrode is effectively improved, and the energy density and the fast charging performance of the battery are improved. Meanwhile, due to the special multi-layer structural design, the volume expansion effect of the silicon-based negative electrode material can be effectively relieved, the structural stability of the negative electrode is optimized, the structural stability of the negative electrode can be kept for a long time in the charge-discharge cycle, and then the battery performance is optimized.

The invention relates to the technical field of lithium batteries, in particular to a composite binder aqueous solution, a silicon-based negative pole piece and a preparation method and application of the silicon-based negative pole piece. The preparation method of the composite binder aqueous solution comprises the following steps: dissolving a water-based polymer binder and a micromolecular physical crosslinking agent in water, adding pyrrole, stirring, adding an initiator, and mixing to obtain the composite binder aqueous solution. A small molecule physical cross-linking agent is introduced into the water-based polymer binder, and a large number of hydrogen bond binding sites are increased, so that the mechanical property of the binder is remarkably enhanced, and the machinability of the pole piece is further improved. Meanwhile, polypyrrole can be generated in the binder through in-situ polymerization, and the polypyrrole can be tightly coated on the surfaces of the silicon particles through strong interaction between the binder and the silicon particles to form a stable conductive network, so that the charge transfer capability of the electrode is remarkably improved. In addition, the composite binder is also beneficial to formation of a solid electrolyte layer rich in Li-N and participates in formation of a solid electrolyte interface layer, so that the lithium ion transmission capability of the composite binder is further improved.

The invention discloses a negative electrode material and a secondary battery. The negative electrode material comprises a silicon-carbon material, the silicon-carbon material comprises a silicon-based material and a carbon-based material, and at least part of the carbon-based material is distributed in the silicon-based material; a Raman spectrum is adopted to test the negative electrode material, the negative electrode material has a first characteristic peak at 515 + / -10 cm <-1 >, and the peak intensity of the first characteristic peak is M1; a second characteristic peak exists at 305 + / -10 cm <-1 >, and the peak intensity of the second characteristic peak is M2; a third characteristic peak exists at 925 + / -10 cm <-1 >, the peak intensity of the third characteristic peak is M3, Q is defined as the oxygen protection degree of the silicon-based material, and Q, M1, M2 and M3 have the following relation: Q = M1 / M2 + M1 / M3, 1.5 < = Q < = 4.5, and M2 > M3. The oxygen protection degree Q value of the silicon-based material of the negative electrode material is controlled to be 1.5-4.5, so that side reaction between the negative electrode material and electrolyte can be reduced, a proper amount of oxide can be formed on the surface of the silicon-based material, and the volume expansion of the silicon-based material is relieved.

The invention provides a superfine nano silicon-based negative electrode material prepared based on in-situ high-temperature phase change in a specific confinement microcavity and a preparation method of the superfine nano silicon-based negative electrode material. The method comprises the following steps: mixing silicon and a conductive porous material in a solvent, sanding, forming solid particles through reforming granulation, and constructing a confinement microcavity through coating treatment. And the silicon source is sublimated and desublimated into particles with the particle size of less than 10nm through transient heating and cooling, and the particles are embedded into the porous material, so that the extreme nanocrystallization of silicon is realized. The method effectively solves the problems of volume expansion, low conductivity, poor cycle stability and the like when silicon is used as a lithium ion battery negative electrode material, improves the electron transmission and cycle life, simplifies the process, reduces the cost, and has a good commercialization prospect.

The invention provides a negative pole piece, a cylindrical battery, a battery pack and an electric tool. According to the negative pole piece provided by the invention, the thickness of the negative silicon-based active material on the negative current collector is controlled by controlling the surface density and the compaction density of the negative pole piece, so that the conductivity of the negative pole piece is improved on the premise of ensuring the lithium storage capacity of the negative pole piece. On the basis that the market demand of a cylindrical steel shell battery is large and the cylindrical steel shell battery is limited by consideration of the size, safety and cost, the cylindrical battery provided by the invention adopts the negative pole piece, takes an 18650 cylindrical battery as an example, realizes high capacity and high magnification of the battery and can reach an ideal state at the same time by optimizing the structure and improving the system and the manufacturing process; the energy density and the power output capacity of the battery are remarkably improved, a more efficient and more reliable energy solution is provided for the market, and the battery has wide application prospects and market value.

The invention relates to the technical field of batteries, in particular to silicon carbon particles, a negative plate and a battery. The invention provides a silicon-carbon particle. The surface of the silicon-carbon particle is provided with a concave part; the number N of the concave parts on the surfaces of the silicon carbon particles is greater than or equal to 1; the diameter of the concave part is 0.05 [mu] m-5 [mu] m; the depth of the recessed part is 10 nm to 5 [mu] m. The sunken parts are arranged on the surfaces of the silicon-carbon particles, so that the cycle stability and the expansion performance of the silicon-based negative electrode material are improved.

The invention relates to a silicon-carbon composite material and a preparation method thereof, a negative pole piece, a secondary battery and a device, the silicon-carbon composite material comprises a carbon matrix with a pore structure and a silicon-based material distributed in the pore structure of the carbon matrix, and the silicon-carbon composite material contains phosphorus element. The silicon-based material in the silicon-carbon composite material improves the capacity of the carbon matrix, and the carbon matrix with the pore structure can be used as a buffer medium for volume expansion of the silicon-based material in the charging and discharging process while improving the conductivity of the silicon-based material, so that the problem that the volume of the secondary battery is increased due to silicon expansion is effectively relieved; and the phosphorus element doped in the skeleton of the carbon matrix is beneficial to improving the electronic conductivity of the material, so that the cycle performance of the battery is improved.

The invention discloses a light spot shaping device based on wave plate polarization conversion and a use method, and relates to the technical field of laser processing, the device divides random polarized light into S / P light through a first polarization beam splitter (PBS), converts the S light into P light through a first 1 / 2 wave plate, modulates the S light through a conventional silicon-based liquid crystal spatial light modulator (LCoS SLM), and converts the P light into the S light through a second 1 / 2 wave plate. And the beams are combined by the second PBS. The method comprises the steps of light splitting, polarization conversion, phase modulation, beam combining, beam expanding and focusing and the like. The double 1 / 2 wave plates are combined with the conventional PBS, the laser energy utilization rate is higher than 85%, commercial SLM equipment is adapted, the machining efficiency of the shaped annular light spots is remarkably improved compared with that of Gaussian beams, the method is suitable for laser welding and metal 3D printing, and the problems of energy waste and high cost are solved.

The invention discloses a preparation method of a silicon-based quantum dot tracer. The silicon-based quantum dot tracer agent disclosed by the invention is prepared by taking 3-aminopropyltrimethoxysilane, sodium citrate, urea and deionized water as raw materials and adopting a hydrothermal synthesis method. The silicon-based quantum dot tracer agent is synthesized by using 3-aminopropyltrimethoxysilane as a silicon source and using the synergistic effect of double reducing agents of sodium citrate and urea, the synthesized silicon-based quantum dot tracer agent can overcome the influence of temperature and environment on the silicon-based quantum dot tracer agent, the fluorescence lifetime is prolonged, and the silicon-based quantum dot tracer agent has a relatively small particle size and can be used for preparing the quantum dot tracer agent. And inter-well tracer testing and single-well chemical testing technology research of an on-site oil field are facilitated.

The invention discloses an optical fiber silicon-based microstructure underwater acoustic sensor which is a non-intrinsic F-P air microcavity probe with optical signal interference formed by an optical fiber end face and a silicon-based thin film, the characteristic that the silicon-based thin film is sensitive to sound pressure signals is used for picking up sound pressure changes in a liquid sound field environment, the sound pressure changes are converted into the variable quantity of an optical signal interference phase, and the optical fiber silicon-based microstructure underwater acoustic sensor is obtained. Reducing a sound pressure signal in the liquid sound field through a detection demodulation algorithm; the microcavity probe is packaged by using an organic material thin shell structure, so that the hydrostatic pressure resistance of the underwater acoustic sensor is improved to adapt to application in a deep water environment; the optical fiber silicon-based microstructure underwater acoustic sensor comprises an acoustic sensing silicon microstructure, a microstructure sensing probe and a sensor pressure-resistant structure, according to the acoustic characteristic design of the acoustic sensing silicon microstructure, silicon oxide / silicon nitride and other materials are used as sensing materials, and membrane external stress recovery is achieved through internal stress residues. The method is easy to implement in design process, flexible in application and high in environmental adaptability, and can be applied to noise monitoring and target detection in various complex scenes.

A liquid crystal on silicon (LCoS) and a wavelength selective switch (100), which are used for providing an LCoS device capable of realizing polarization independence, and can also ameliorate the problem of secondary crosstalk occurring due to a residual of unconverted deflection, thereby ensuring the application of the LCoS. In the LCoS, an extra phase is pre-added in a dispersion direction on the basis of structures such as a meta-surface design or a phase film; and by means of the pre-added extra phase, unconverted polarization light forms a high-frequency deflection or a scattering phase deviates the energy of the unconverted polarization light from a crosstalk level, so as to prevent the crosstalk of the unconverted polarization light and converted polarization light, thereby implementing the suppression of secondary crosstalk in a port direction.

The invention relates to the technical field of monolithic integration, in particular to a monolithic three-dimensional integration implementation method and device for a hybrid precision in-memory computing architecture, and the method comprises the steps: obtaining a silicon-based CMOS technology and a subsequent integration technology in a monolithic three-dimensional integration technology; manufacturing a control logic circuit on the computing architecture in the mixed precision memory by adopting a silicon-based CMOS (Complementary Metal Oxide Semiconductor) process; a plurality of functional layers are vertically stacked on a logic circuit by adopting a back-end integration process, communication among the functional layers is realized through interlayer dielectric via holes in the vertical direction, an analog in-memory array, a digital in-memory array and a cache are arranged on the functional layers, the analog in-memory array realizes matrix and vector multiplication with fixed weight, and the digital in-memory array realizes matrix and vector multiplication with fixed weight. And the array in the digital memory realizes matrix multiplication of refresh weight. Therefore, the problems that an in-memory computing architecture usually needs to occupy a relatively large part of chip area, the computing efficiency is relatively low and the like in related technologies are solved.

The invention relates to an in-situ cured silicon-based composite negative pole piece as well as a preparation method and application thereof. The silicon-based composite negative pole piece comprises a negative pole piece and a polymer electrolyte layer which is cured in situ and coats the surface of the negative pole piece; the polymer electrolyte layer is obtained through in-situ polymerization reaction of a precursor solution applied to the surface of the negative pole piece; the precursor solution contains a fluoroalkyl functional group; and the negative pole piece comprises a silicon-based material of which the surface is rich in hydroxyl. The composite negative pole piece disclosed by the invention not only can effectively limit the volume expansion of a silicon negative pole in a circulation process and reduce the phenomena of particle pulverization and interface separation, but also remarkably enhances the adhesive force among active substance particles, and ensures the structural integrity of the pole piece and the efficient transmission of ions and electrons. The silicon-based negative pole piece can form a stable solid-solid interface with the solid electrolyte through the polymer coating layer, so that the interface impedance is remarkably reduced, and the ion conduction efficiency is improved, thereby enhancing the cycling stability and safety performance of the battery while improving the energy density of the battery.

The invention relates to the technical field of batteries, in particular to a lithium ion battery and an electronic device comprising the lithium ion battery. The lithium ion battery comprises a negative plate and an electrolyte, the negative plate is provided with a first surface and a second surface which are back to back along the thickness direction, the first surface is provided with a plurality of convex parts, the second surface is provided with a plurality of concave parts, the convex parts correspond to the concave parts, and the ratio of the sum of orthographic projection areas of the convex parts on the first surface to the area of the negative plate is S; the negative plate comprises a negative current collector and a negative active material layer on at least one side surface of the negative current collector, and the negative active material layer comprises a silicon-based material; the electrolyte comprises 2, 2-ethyl difluoroacetate with the content of F1 and 1, 1, 2, 2,-tetrafluoroethyl-2, 2, 3, 3-tetrafluoropropyl ether with the content of F2, and (F1 + F2) / S is larger than or equal to 1.9 and smaller than or equal to 984. The lithium ion battery provided by the invention has the characteristics of long high-temperature cycle life and high safety.

The invention discloses a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof, and belongs to the technical field of semiconductor device design and manufacturing, the silicon-based GaN-HEMT epitaxial structure comprises a substrate, the substrate is a silicon substrate, a nucleating layer is epitaxially grown on the substrate, a defect filtering layer is epitaxially grown on the nucleating layer, and the defect filtering layer is arranged on the substrate. An impurity regulation and control layer is epitaxially grown on the defect filtering layer, a channel layer is epitaxially grown on the impurity regulation and control layer, a barrier layer is epitaxially grown on the channel layer, the defect filtering layer deposits a GaN layer on the nucleating layer, and the GaN layer structurally comprises a plurality of vertical insertion layers. According to the silicon-based GaN-HEMT epitaxial structure and the manufacturing method thereof, the silicon-based GaN-HEMT epitaxial structure comprises a nucleating layer, a defect filtering layer, an impurity regulation and control layer, a channel layer and a barrier layer, the electrical performance, reliability and consistency of a device are improved, defects can be effectively reduced, impurity distribution can be effectively controlled by optimizing materials and growth process parameters of all layers, and the performance of the device is improved. And the voltage-resistant electric leakage performance of the device is improved.

The invention belongs to the technical field of semiconductor devices, and particularly relates to an optical waveguide device based on a glass substrate, which comprises the glass substrate and a transition layer, an X silicon-based waveguide layer is arranged on the first surface of the transition layer, a heterogeneous material chip layer is integrated on the X silicon-based waveguide layer, the first surface of the X silicon-based waveguide layer is coated with a protective layer, and the protective layer is arranged on the first surface of the transition layer. The protective layer covers the glass substrate, the X silicon-based waveguide layer and the heterogeneous material chip layer at the same time; wherein the transition layer comprises an X element which is the same as that of the X silicon-based waveguide layer, through the above structure, the optical waveguide device with multiple layers of transition function areas is provided, the problems that the surface roughness of a large glass substrate is high, and the warping possibility is higher due to size effect amplification can be solved, and the optical waveguide device is suitable for large glass substrates. On the premise of fully utilizing the advantages of low cost and high performance of the glass substrate, the design of a large-size optical waveguide device for inhibiting packaging warping is realized.

The invention discloses a negative electrode interface modification material, a negative electrode plate, a positive electrode interface functional layer, a positive electrode plate, a solid-state battery and a power utilization device, and relates to the technical field of batteries, the negative electrode interface modification material comprises a first polymer matrix, a reinforcing filler, a conductive agent and a lithium salt, the modulus of the reinforcing filler is greater than 50 GPa. The tensile strength of the negative electrode interface modification material can be improved through the first polymer matrix, breakage of a negative electrode interface modification layer is reduced, interface impedance is reduced, meanwhile, the first polymer matrix can be matched with the expansion coefficient of a silicon-based material, and bulging of a negative electrode plate is reduced. The modulus of the reinforcing filler is greater than 50GPa, so that the modulus of the negative electrode interface modification layer can be improved, the expansion of the silicon-based active material is further inhibited, the conductive agent can relieve the problem that the flexible substrate interface of the copper foil and the negative electrode interface modification layer possibly causes unsmooth electron transmission, and the lithium salt can improve the ion conduction capability and reduce the interface impedance.

The invention relates to a double-rare-earth crystal inhibition reinforced modified ultra-high-temperature protective coating as well as a preparation method and application thereof. The preparation method comprises the following steps: preparing a CVD-SiC inner coating on the surface of a matrix material by adopting a chemical vapor deposition method; a slurry sintering method is adopted, and a double rare earth (DRE) doped silicon-based structure anti-oxidation middle layer is prepared on the surface of the CVD-SiC inner coating; and preparing the PVD-ZrC thermal ablation prevention outer coating on the rare earth doped silicon-based anti-oxidation layer by adopting a physical vapor deposition method. According to the SiC / dRe coated Si-ZrSi2-ZrB2 / ZrC coating provided by the invention, the crystallization growth of SiO2-TGO in a silicon-based component structure is inhibited by doping rare earth oxide (REO) and / or rare earth carbide (REC), so that the stress accumulation and thermal expansion mismatch effect of the coating in a thermal service process is greatly relieved. Meanwhile, the complementary advantages of silicon-based ceramic and ultra-high-temperature ceramic in the aspects of oxidation resistance and ablation resistance are fully combined, the thermal protection capacity of the coating under the ultra-high-temperature condition is improved, the service life of the coating is remarkably prolonged, and the service stability of the coating is remarkably improved.

The invention provides a negative electrode material and a battery, the negative electrode material comprises a silicon-based active substance and a carbon material located on at least part of the surface of the silicon-based active substance, and the silicon-based active substance comprises silicon, a silicon oxide and a metal M compound; the negative electrode material is subjected to a Lab chromatic aberration test, the brightness L, the red-green color degree a and the yellow-blue color degree b of the negative electrode material are obtained, L is larger than or equal to 15 and smaller than or equal to 35, a is larger than or equal to-2 and smaller than or equal to 5, and b is larger than or equal to-2 and smaller than or equal to 5; in the XRD spectrum of the negative electrode material, the half-peak width of the strongest characteristic peak in the compound of the metal M in the negative electrode material is FWHM (M), the half-peak width of the characteristic peak of the silicon (111) surface is FWHM (Si), and the ratio of FWHM (M) to FWHM (Si) is more than 0.2 and less than 0.8. According to the negative electrode material provided by the invention, the first efficiency and cycling stability of the negative electrode material can be improved, and the expansion efficiency of the negative electrode material is reduced.

The invention relates to the field of crystal preparation, in particular to a production device and a preparation method of monocrystalline silicon, the monocrystalline silicon and an insulated gate bipolar transistor. The apparatus for producing monocrystalline silicon comprises: a crucible for placing and melting a raw material; the heating module is arranged around the crucible and comprises a fixed heater at the upper part and a movable heater at the lower part, and the movable heater moves along the lifting direction of the crystal bar so as to accurately control the crystal growth temperature gradient and the oxygen diffusion transmission mode at different stages of crystal growth; and the magnetic field module is used for applying an asymmetric hook-shaped magnetic field in the crystal growth process so as to inhibit convection of raw materials in the crucible, reduce the oxygen concentration and improve the radial uniformity of oxygen. According to the technical scheme, on the basis of 300mm N-type monocrystalline silicon, under low oxygen (lt; 5ppma), ROGlt; and on the basis of 10%, the target of low potential type defect density can also be achieved, so that the high-quality requirements, including ultralow oxygen content, low defect density and the like, of an IGBT (Insulated Gate Bipolar Translator) on a silicon single crystal substrate are met. The efficient preparation of the ultralow-oxygen N-type silicon single crystal is realized by combining a heater with a novel structure with a CUSP magnetic field technology and matching with crystal pulling process parameter optimization. According to the silicon single crystal prepared by the method, the performance and the reliability of an IGBT (Insulated Gate Bipolar Translator) can be remarkably improved, the production cost is reduced, and the requirements of modern power electronic devices on high-performance silicon-based materials are met.

The embodiment of the invention relates to the field of energy storage, and provides a secondary battery and a preparation method thereof, an energy storage system and electric equipment. The negative electrode active material comprises a silicon-based material, honeycomb porous graphite and a polypyrrole layer, the surface of the honeycomb porous graphite is coated with the polypyrrole layer, the silicon-based material is embedded in pores of the honeycomb porous graphite, and the silicon-based material comprises silicon particles, a poly N-isopropylacrylamide layer and a disulfide bond-containing polyaniline layer. The poly (N-isopropylacrylamide) layer and the disulfide bond-containing polyaniline layer are coated on the surfaces of the silicon particles, the poly (N-isopropylacrylamide) layer is positioned between the silicon particles and the disulfide bond-containing polyaniline layer, and the honeycomb porous graphite comprises a graphite flake and a carbon layer which is positioned on the surface of the graphite flake and is of a honeycomb pore structure. The secondary battery formed by assembling the negative electrode active material disclosed by the invention has relatively high cycling stability, high temperature resistance, rate capability, gram volume and safety.