Lamination solar battery

A solar cell, solar energy technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as attenuation, battery efficiency decline, ultraviolet light-induced attenuation, etc., to achieve the effect of expanding the spectral response range

Active Publication Date: 2015-10-14
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF3 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, perovskite-phase organometallic halides are susceptible to the influence of the natural environment, especially to water vapor and oxygen. The perovskite material is exposed to the air, its crystal structure will be destroyed, and it will be dissolved by water vapor, resulting in The efficiency of the battery drops
At the same time, perovskite batteries also have a serious problem of UV-induced attenuation. Pure perovskite batteries will decay quickly due to the influence of ultraviolet light.
[0003] The bandgap of amorphous silicon thin film is 1.75eV, so that the absorption of this material is mainly concentrated in the blue light region of the solar spectrum and the absorption in the red light region is weak, so single-junction amorphous silicon cells are difficult to meet the needs of use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lamination solar battery
  • Lamination solar battery
  • Lamination solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment is prepared on a 156*156mm flexible substrate, such as Figure 1a Shown:

[0044] 1. First prepare the nanocrystalline silicon (nanometer silicon germanium or amorphous silicon germanium) bottom cell, the specific steps are: prepare the first back electrode a2 on the first substrate a1, in this embodiment a1 is a polyimide film, The thickness is 50 μm. First prepare Ag thin film with a thickness ranging from 100-300nm (200nm here), the method used is thermal evaporation or sputtering, and then prepare transparent conductive thin film (ITO (indium-doped tin oxide), FTO (fluorine-doped Doped tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), the thickness is 100-300nm (here 200nm), the preparation of this example is AZO , the method used is sputtering. Then prepare the bottom battery, first prepare the first N-type nanocrystalline silicon film a3, the method used is PECVD (plasma enhanced chemical vapor deposition), the film thick...

Embodiment 2

[0050] In this embodiment, the three-stack solar cell is prepared on a 156*156 glass substrate, such as Figure 1b Shown:

[0051] The second front electrode b2 is prepared on the second glass b1. In this embodiment, the front electrode is BZO with a thickness of 800 nm. The method used is LPCVD (low pressure chemical vapor deposition). After that, laser scribing P1 is used, the pitch of the scribing lines is 1 cm, and the line width is 45 μm. The laser used is 1024nm red light.

[0052] Prepare an amorphous silicon top battery afterwards, and the specific steps are: first prepare the second P-type silicon thin film layer b3, which is a P-type silicon carbide thin film in this embodiment, with a thickness of 15 nm, and the method used is PECVD, and then prepare the second non-crystalline silicon thin film layer b3. The crystalline silicon I layer b4 has a thickness of 350 nm, and the method used is PECVD. Then prepare the second N-type silicon thin film layer b5 with a thic...

Embodiment 3

[0059] This embodiment is prepared on a 156*156N type silicon wafer. Such as Figure 2a Shown:

[0060] To prepare a crystalline silicon bottom cell, first, the third N-type silicon wafer c1 with a thickness of 150 μm is cleaned by industrial RCA, and then polished on both sides in TMAH solution, and then B (boron) is diffused to form the third P-type diffusion layer c2 The diffused sheet resistance is in the range of about 60omh / sq. Afterwards, a post-cleaning process is performed to remove the back junction, and silver-aluminum paste is printed on the side where the back junction is removed, and sintered in a sintering furnace to form the third electrode c3. Then prepare the third-intermediate layer c4. In this embodiment, the intermediate layer is ITO with a thickness of 100 nm, and the method used is sputtering.

[0061] 2. Prepare the battery in the perovskite, the specific steps are to first prepare the third electron transport layer c5, the material of the electron t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a lamination solar battery. The lamination solar battery is composed of an amorphous silicon film top battery, a perovskite middle battery and a nanocrystalline silicon bottom battery, or has a double-lamination structure taking an amorphous silicon film battery as a top battery and a perovskite battery as a bottom battery. The optical band gaps of three materials, i.e., amorphous silicon, perovskite and nanocrystalline silicon (crystalline silica) match well (1.75eV, 1.5eV and 1.12eV) so that light of different wavebands can be absorbed segment by segment. The amorphous silicon film top battery and the nanocrystalline silicon bottom battery (or the crystalline silica, nanocrystalline silicon germanium and amorphous silicon germanium) clamp the perovskite therebetween so as to protect the perovskite battery and reduce the influence exerted by atmosphere and water on the perovskite battery. At the same time, the amorphous silicon top battery can absorb ultraviolet light so as to protect a perovskite sub-battery. Besides, an amorphous silicon layer at the top has better UV and blue light response than the perovskite battery so that the defects of the perovskite middle battery are made up for.

Description

technical field [0001] The invention relates to a laminated solar cell based on silicon film, crystalline silicon and perovskite. Background technique [0002] The perovskite phase organometallic halide is usually a semiconductor with a direct band gap, and the band gap width is adjustable in the range of about 1.1-1.7eV. At room temperature, it has strong light absorption and photoluminescence properties. The efficiency of solar cells based on this material can reach 15.6% according to public reports. However, perovskite-phase organometallic halides are susceptible to the influence of the natural environment, especially to water vapor and oxygen. The perovskite material is exposed to the air, its crystal structure will be destroyed, and it will be dissolved by water vapor, resulting in The efficiency of the battery drops. At the same time, perovskite batteries also have a very serious problem of ultraviolet light-induced attenuation. Pure perovskite batteries are affected...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/078H01L31/0352
CPCY02E10/50
Inventor 刘生忠李灿王书博秦炜王辉张文华张坚
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap