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3 results about "Amorphous silicon germanium" patented technology

Monolithic Microelectromechanical Systems Based Spatial Light Modulators with Two-dimensional Modulators

Monolithic microelectromechanical systems (MEMS)-based spatial light modulators (SLM) are provided. Generally, the SLM includes a common electrode in or on a substrate, an electrostatically displaceable actuator including an actuator electrode suspended above an upper surface on the substrate, a first light reflective surface supported by and separated from the upper surface on the substrate by the actuator, and a driver monolithically integrated in the substrate below the SLM. The actuator includes a structural layer of tensile, amorphous silicon-germanium that also serves as an actuator electrode. The driver includes multiple layers of vias, metal interconnects, and complementary metal-oxide-semiconductor (CMOS) devices to electrically couple to the common electrode and actuator, and is operable to displace the actuator and first light reflective surface in response to voltages applied thereto.
Owner:SILICON LIGHT MACHINES CORP

Processing method and processing apparatus

PendingJP2026112132APtru catalystMetallurgy
This technology provides a way to easily remove the gettering layer. [Solution] A processing method according to one aspect of the present disclosure comprises: preparing a substrate having a polycrystalline silicon film containing a catalyst metal on its surface; forming a gettering layer on the polycrystalline silicon film; and annealing the substrate to diffuse the catalyst metal contained in the polycrystalline silicon film into the gettering layer, wherein the gettering layer is formed of amorphous silicon germanium containing impurities that enable the diffusion of the catalyst metal into the gettering layer.
Owner:TOKYO ELECTRON LTD

Processing method and processing device

PCT designated stageWO2026140858A1Ptru catalystMetallurgy
A processing method according to one aspect of the present disclosure comprises: preparing a substrate comprising, on a surface thereof, a polycrystalline silicon film containing a catalyst metal; forming a gettering layer on the polycrystalline silicon film; and diffusing the catalyst metal contained in the polycrystalline silicon film into the gettering layer by annealing the substrate. The gettering layer is formed of amorphous silicon germanium containing an impurity that enables diffusion of the catalyst metal into the gettering layer.
Owner:TOKYO ELECTRON LTD