The invention discloses an amorphous silicon germanium thin-film solar cell having a double-layer interface band gap buffer layer. The amorphous silicon germanium thin-film solar cell comprises an electrode I, an n-type doped amorphous silicon thin film, an n-i buffer layer, a continuously variable band gap intrinsic (i type) amorphous silicon germanium thin film, an i-p double-layer band gap buffer layer, a p-type doped amorphous silicon thin film and an electrode II which are successively prepared on a substrate; and the electrode I and the electrode II are respectively a bottom electrode and a top electrode of the cell. A digital flowmeter is controlled through a computer, the continuously variable band gap amorphous silicon germanium thin film is prepared, and hole transmission is effectively increased; and, through adoption of the double-layer band gap buffer layer structure, energy band mismatching of a p-type window layer and the amorphous silicon germanium thin film is reduced, and then recombination of carriers at an interface defect state is reduced. Furthermore, the invention provides a method for preparing a micro-nano structure on a back reflection electrode, the optical paths of light rays in the cell can be increased, and then light absorption is increased.