2 results about "Amorphous silicon germanium" patented technology

This technology provides a way to easily remove the gettering layer. [Solution] A processing method according to one aspect of the present disclosure comprises: preparing a substrate having a polycrystalline silicon film containing a catalyst metal on its surface; forming a gettering layer on the polycrystalline silicon film; and annealing the substrate to diffuse the catalyst metal contained in the polycrystalline silicon film into the gettering layer, wherein the gettering layer is formed of amorphous silicon germanium containing impurities that enable the diffusion of the catalyst metal into the gettering layer.

A processing method according to one aspect of the present disclosure comprises: preparing a substrate comprising, on a surface thereof, a polycrystalline silicon film containing a catalyst metal; forming a gettering layer on the polycrystalline silicon film; and diffusing the catalyst metal contained in the polycrystalline silicon film into the gettering layer by annealing the substrate. The gettering layer is formed of amorphous silicon germanium containing an impurity that enables diffusion of the catalyst metal into the gettering layer.