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A multilayer back reflector structure for thin film solar cells

A technology of solar cells and mirrors, applied in the fields of circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of no explanation or report, and data not yet collected, etc., to improve photoelectric conversion efficiency, high yield, Improve the effect of short-circuit current

Inactive Publication Date: 2011-12-07
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Applied to the structure of solar cells, there is no description or report of similar technology to the present invention, and no similar information has been collected at home and abroad.

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  • A multilayer back reflector structure for thin film solar cells
  • A multilayer back reflector structure for thin film solar cells
  • A multilayer back reflector structure for thin film solar cells

Examples

Experimental program
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Effect test

Embodiment 1

[0024] With flexible stainless steel with a thickness of 50 μm as the substrate 1, two back reflector structures were prepared by magnetron sputtering (working frequency: 13.56 MHz): the back reflector (1) was Ag with a thickness of 500 nm deposited sequentially on the substrate. Membrane, the ZnO of 100nm: Al thin film; Back reflector (2) is the Ag film 2, the ZnO of 100nm: Al thin film 3, the Ag thin film 4 of 10nm, the ZnO of 100nm: Al thin film that deposit thickness is 500nm on the substrate successively 5.

[0025] Using the plasma-assisted chemical vapor deposition method (PECVD, the operating frequency is 13.56MHz), on the flexible stainless steel substrate (used to prepare sample 1), the prepared back reflector (1) (used to prepare sample 2), the back reflector Deposit identical N, I, P three-layer silicon film on mirror (2) (for preparing sample three); Wherein N layer reaction gas is hydrogen, silane, phosphine, thickness is about 50nm; I layer reaction gas is hydro...

Embodiment 2

[0030] The multilayer back reflector structure is prepared by electron beam evaporation method: the multilayer back reflector structure is to deposit Ag film 11 with a thickness of 1000nm and SnO with a thickness of 500nm on the substrate. 2 : F oxide transparent conductive film 12, 20nm Ag film 13, 500nm SnO 2 : F conductive film, 20nm Ag thin film 16, 500nm SnO 2 : F conductive film 17. The multi-layer back reflector can be applied to thin-film solar cells whose absorption layers are made of amorphous silicon, microcrystalline silicon, nano-silicon, amorphous silicon germanium, copper indium gallium selenide, and cadmium telluride [15]. Various types of tandem solar cells. structured as figure 2 shown.

Embodiment 3

[0032] Using 50 μm thick flexible stainless steel as the substrate, the multilayer back reflector structure was prepared by vacuum thermal evaporation method: the multilayer back reflector structure is to deposit Al film with a thickness of 200nm on the substrate, and ZnO:Ga oxide with a thickness of 200nm Transparent conductive film, 3nm Al film, 200nm ZnO:Ga conductive film, 3nm Al thin film, 200nm ZnO:Ga conductive film, 3nm Al thin film, 200nm ZnO:Ga conductive film.

[0033] Using the plasma-assisted chemical vapor deposition method (PECVD, the working frequency is 13.56MHz), on the prepared multi-layer back reflector structure, deposit N, I, P three-layer silicon film: the reaction gas of the N layer is hydrogen, silane , Phosphine, the thickness is about 50nm; I layer reaction gas is hydrogen, silane, thickness is about 300nm; P layer reaction gas is hydrogen, silane, borane, methane, thickness is about 30nm.

[0034] A magnetron sputtering method (operating frequency o...

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Abstract

The invention discloses a multi-layer back reflection mirror structure for thin film solar cells. Comprising film (11) and periodic structure (14); Described film (11) is Ag film or Al film; Described periodic structure (14) is made of oxide conductive film (12) and ultra-thin film (13 ) film composed of a double-layer structure, and a layer of oxide conductive film (17); the double-layer structure can be repeated 1-5 times. The multi-layer back reflector structure provided by the invention has higher reflectivity in visible light and near-infrared bands, and solar cells can obtain higher short-circuit current. It can be applied to thin-film solar cells with absorption layers made of amorphous silicon, microcrystalline silicon, nano-silicon, amorphous silicon germanium, copper indium gallium selenide, and cadmium telluride, as well as various stacked solar cells composed of them.

Description

technical field [0001] The invention relates to the design of solar cells, in particular to the multilayer optical reflector structure of thin film solar cells. Background technique [0002] In thin-film solar cells, especially silicon-based (amorphous silicon, microcrystalline silicon, nano-silicon, amorphous silicon germanium, etc.) The active layer absorbs, thereby increasing the short-circuit current of the solar cell. Currently the most commonly used back reflector structure is Ag / ZnO or Al / ZnO. Focusing on the more efficient use of photon flow, international researchers have proposed the idea of ​​building a photonic crystal diffraction grating and a multi-layer periodic reflection structure on the back of the battery to further improve the short-circuit current and photoelectric conversion efficiency of solar cells. [0003] Multilayer periodic back reflectors are composed of high and low refractive index materials alternately, and are often used in vertical cavity ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/18H01L31/0216
CPCY02P70/50
Inventor 刘成周丽华叶晓军钱子勍张翼翔陈鸣波
Owner SHANGHAI INST OF SPACE POWER SOURCES
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