40 results about "Back reflector" patented technology

A modified distributed feedback (DFB) laser comprises a gain region with a distributed feedback grating and a back reflector that receives a portion of laser light generated by the gain region and the distributed feedback. The back reflector is a wavelength-selective reflector that retroreflects the portion of the received laser light back to the gain region, thereby stimulating single mode laser oscillation and / or improving a side mode suppression ratio (SMSR) of the laser light generated by the modified DFB laser. The spectral properties of the laser output by the modified DFB laser can be independent of position of a cleaved facet of the laser chip near a back end of the modified DFB laser and / or the performance of the modified DFB laser can be maintained over a large number of laser chips separated from a wafer.

A lighting assembly (100) including a plurality of light sources (102), a light guide plate (106), a back reflector (110), a front collector (114), and a plurality of microstructures (124) is provided. The light sources are configured to generate light and are arranged on a PCB (118). The light guide plate (106) is arranged to receive the light generated by the light sources (102). The light guide plate (106) and the plurality of light sources (102) are separated by a gap (108). The back reflector (110) is arranged along a first surface (112) of the light guide plate (106). The front collector (114) is arranged below a second surface (116), opposite the first surface (112), of the light guide plate (106). The front collector (114) is also arranged across the gap (108) separating the light guide plate (106) from the plurality of light sources (102). The microstructures (124) are arranged on the first surface (112) of the light guide plate (106) and are arranged in a pattern to provide an asymmetric light distribution (200).

An autocorrelator and a pulse amplifying device including the same are provided. The autocorrelator includes a parabolic mirror configured to transmit and reflect pulse laser beam, a prism on one side of the parabolic mirror and configured to split the pulse laser beam, a first lower retro-reflector under the prism and provided at a first distance from the prism to reflect a portion of the pulse laser beam, a first upper retro-reflector on the prism, provided at a second distance different from the first distance from the prism, and configured to reflect another portion of the pulse laser beam to generate a first time difference between pulses of the pulse laser beam upper retro-reflector, and a first sensor under the parabolic mirror and configured to receive the pulse laser beam to detect a pulse width of the pulse laser beam.

The utility model relates to a light emitting diode packaging structure. The LED packaging structure comprises a packaging body and at least one LED chip packaged in the packaging body, wherein each LED chip comprises a substrate, an epitaxial structure, a back reflecting mirror, a first isolation groove, a second isolation groove, a current blocking layer, a transparent conductive layer, a bonding pad structure and an insulating protection layer; the first isolation groove is formed in one side surface of the epitaxial structure and extends to the surface of the substrate from the second semiconductor layer; the second isolation groove is formed in the other side surface of the epitaxial structure and extends to the surface of the substrate from the first semiconductor layer; the insulation protection layer covers the isolation groove, the bonding pad structure and the transparent conductive layer; the packaging body comprises a packaging substrate and a packaging layer; the packaging substrate is used for bearing the LED chips; the packaging layer covers the LED chips; and KSF fluorescent powder is arranged in the packaging layer. According to the utility model, the problem that the GaN epitaxial structure is corroded due to hydrolysis of the KSF fluorescent powder in the prior art is effectively solved.

A laser having a back reflector, a front surface spaced apart from the back reflector, and a cavity defined between the back reflector and the front surface, the cavity having a waveguide and comprising: a first cavity segment adjacent to the front surface, the first cavity segment including a Bragg grating and a first portion of the waveguide, the first portion having a first width, the length of the Bragg grating being in a range of 40% to 60% of the distance from the back reflector to the front surface; and a second cavity segment adjacent to the back reflector, the second cavity segment including a second portion of the waveguide, the second portion having a second width greater than the first width.

A backlight including a front reflector disposed on a back reflector and defining a cavity therebetween. For a visible wavelength range and for a first incident angle of less than 5 degrees, the front reflector has an average transmittance of less than 20% for the incident light polarized along a first direction, and an average transmittance of between 20% and 85% for the incident light polarized along an orthogonal second direction. For a visible wavelength range and for a second incident angle of greater than 40 degrees, the front reflector has an average transmittance of less than 40% for each of the first and second directions. For at least a first wavelength in an infrared wavelength range, the front reflector has a transmittance of greater than about 40% for each of the first and second incident angles and for each of the first and second directions. For each of the first and second incident angles, for the incident light polarized along each of the first and second directions, the back reflector has a transmittance of greater than 30% for the first infrared wavelength, and an average transmittance of less than 20% in the visible range.

The utility model belongs to the technical field of seed germination observation, especially is involved in an agricultural seed germination observation box. The technology includes the box, be provided with a plurality of baffle in the box, the baffle divides the box into a plurality of for placing the compartment of seedling tray, the top of box is covered with the installation shell, is equipped with a plurality of first through -hole that communicates with the installation shell connection in the box, two pieces of reflector plate are fixed in the top of installation shell, the left and right inner side wall of installation shell all are equipped with the light source board, the front reflector plate is used for the light of left light source board reflection into the box, the back reflector plate is used for the light of right light source board reflection into the box. Start light source board, two pieces of light source board emit light, the light is reflected and irradiated into the compartment through the reflector plate in the installation shell, only two pieces of light source board are used in a box, compared with the light source board of each compartment of existing installation reduces the cost. Through the light reflection and the heat conduction principle of water to improve the automation of seed germination observation box.

The invention provides an optical frequency comb modulation system for a quantum dot mode-locked laser, which comprises a quantum dot mode-locked laser, a light splitting element, an optical feedback path and an optical measurement path, and is characterized in that the quantum dot laser is internally provided with a laser cavity, and two ends of the quantum dot laser can output laser; one end of the quantum dot laser is connected with the input end of the light splitting element, the output end of the light splitting element is connected with the input end of the optical feedback path and the input end of the optical measurement path, and a first deviation controller and a back reflector which are matched with each other are arranged in the optical feedback path. The quantum dot laser, the light splitting element, the first deviation controller and the back reflector are connected through optical fibers or waveguides. The method has the advantages that tuning of the modulation state of the optical frequency comb can be achieved, the distribution range of the FM comb is compressed, and the working range of the AM comb is widened.

To provide a lighting tool which can suppress a light intensity value above a first direction in which the light intensity value becomes maximum.SOLUTION: A lighting tool 1 according to one aspect of the present disclosure, has a tool body 2 for storing a light emitting element and a reflective mirror unit 252 for controlling distribution of light emitted by the light emitting element, and emits light on a stadium. The lighting tool 1 includes: a rear reflective mirror 252R positioned on a rear side Dr from the light emitting element and having a parabolic reflective surface MA on which a focal point is set at a light emitting center O of the light emitting element; and a front reflective mirror 252F positioned on a front side Df of the light emitting element and having a planar reflective surface N. The rear reflective mirror 252R is stored in the tool body 2 in a posture in which a center axis MAA of the parabolic reflective surface MA is inclined at a first predefined angle toward the front side Df with an optical axis F of the light emitting element as a reference. The front reflective mirror 252F is stored in the tool body in a posture in which the planar reflective surface N is positioned above Du a first direction Ds1 which is inclined at the first predefined angle from the light emitting center.SELECTED DRAWING: Figure 10

An optical system includes a backlight configured to emit light from an emission surface thereof, and a front reflector. The backlight includes at least one light source configured to emit a first light having at least a first wavelength. The front reflector is disposed on a back reflector and defines a recycling optical cavity therebetween. The front reflector defines at least one opening therein. When a test material is disposed in the recycling optical cavity, the test material is configured to emit a second light having at least a second wavelength in response to a stimulus. The emitted second light exits the optical system through the at least one opening of the front reflector after being recycled in the recycling optical cavity. The recycling affects an optical intensity of the exiting light.

A system, method, and apparatus for a short-wavelength infrared pixel based on a non-scattering nanostructure are provided. The method comprises the steps of: forming a back reflector on a substrate of a pixel, wherein the back reflector is configured to reflect electromagnetic radiation; forming a first doping region of a first semiconductor adjacent to the back reflector; forming an absorption region of a second semiconductor adjacent to at least a portion of the first doping region, wherein the absorption region is configured as a photodetector; forming a second doping region of the first semiconductor adjacent to the absorption region, wherein the second doping region is configured to allow electromagnetic radiation to pass into the absorption region; and forming a nanostructure adjacent to the second doping region, wherein the nanostructure is configured such that light incident on the pixel passes through the nanostructure and a portion of the light reflected from the back reflector moves toward the absorption region.

An optical system includes a front optical film and a back reflector defining a light recycling optical cavity therebetween. The optical cavity is configured to receive a test sample. The optical system includes a light source disposed on the front optical film side of the optical cavity and configured to emit first and second lights having respective intensities I1b and I1g and respective first and second wavelengths toward the optical cavity, such that when the test sample is disposed in the recycling optical cavity and the emitted first and second lights are recycled in the optical cavity while being at least partially absorbed by the test sample, at least portions of the recycling emitted first and second lights exit the optical cavity through the front optical film as respective exiting first and second lights having respective optical intensities I2b and I2g. I2g / I1g is greater than I2b / I1b by at least 10%.

This invention relates to a light-emitting diode (LED) structure and its fabrication method. The invention includes a substrate, a back reflector, a buffer layer, a first semiconductor layer, an active layer, and a second semiconductor layer. A Mesa structure extending from the second semiconductor layer to the first semiconductor layer is disposed along the second semiconductor layer. The Mesa structure includes a stepped surface and a groove that exposes a portion of the first semiconductor layer. A transparent conductive layer is disposed on the second semiconductor layer. A current-blocking layer includes a first insulating layer and a second insulating layer. A first pad and a second pad are present, with the first pad partially penetrating the transparent conductive layer and the first insulating layer and contacting the transparent conductive layer, the first insulating layer, and the second semiconductor layer, respectively. The second pad partially contacts the bottom wall of the groove. A second insulating layer is at least partially disposed on the transparent conductive layer. Multiple microdisk resonant cavity structures are distributed on the surface of the second insulating layer and contact the surface of the transparent conductive layer through micropores. By introducing the microdisk resonant cavity structure, the optical coupling efficiency and light extraction efficiency are significantly improved.

The invention relates to a graphene-based three-waveband absorption enhancement structure and a preparation method thereof. The graphene-based three-waveband absorption enhancement structure comprises a nanopore array, single-layer graphene, a silicon dioxide layer, a back reflection layer and a silicon substrate which are stacked from top to bottom, the absorption peak position and the absorption peak intensity of the three-waveband absorption enhancement structure are dynamically regulated and controlled by adjusting the material and the thickness H2 of the back reflection layer, the thickness T of the silicon dioxide layer, the thickness H1 of the nanopore array, the radius R of the nanopore and the period P of the nanopore array and filling a medium in the nanopore or applying external voltage. The position and the strength of the absorption peak of the absorption enhancement structure can be dynamically regulated and controlled by adjusting structural materials and geometric parameters, critical coupling is achieved, and total absorption of light is achieved; the nanopore array is prepared by adopting a PDMS template imprinting method, so that the method has the advantages of low cost and batch preparation, and also has high resolution.

A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The active layer extend to the side surfaces of the LED; the anode contact is on a central area of the p-doped layer and leaves peripheral regions without direct electrical coupling to the anode contact, reducing non-radiative recombination at the side surfaces. The LED can include a front reflector with a central opening aligned with the anode contact. The LED can include front, side, and back reflectors to form an optical cavity enclosing the n- and p-doped semiconductor layers and the active layer. At least a portion of the central opening is positioned opposite at least a portion of the central area of the anode contact surface.

A boron neutron capture therapy device compatible with a rotating target and a fixed target and a target replacement method are provided, including a beam shaping body and a vacuum pipeline, where the beam shaping body includes a base platform, two sides of the base platform are each provided with a reflector module and a back reflector, and a compatible cavity capable of accommodating a rotating target module is disposed on the base platform; when the rotating target is adopted, the rotating target module is mounted in the compatible cavity, and the vacuum pipeline is connected with the rotating target module; and when the fixed target is adopted, the fixed target is detachably mounted on the vacuum pipeline. The boron neutron capture therapy device can meet the arrangement requirements of the fixed target and the rotating target at the same time, which is convenient for adjustment and updating of apparatuses.

The invention discloses an online detection system and method for collimation wavefront quality of a Mach-Zehnder interferometer. The system comprises a forward reflector and a turn-back reflector which are movably arranged on the Mach-Zehnder interferometer; the forward reflector and the turn-back reflector are plane mirrors; the method comprises the following steps: acquiring near-end and far-end interferograms, and measuring related parameters; judging and detecting unqualified optical elements according to the corresponding parameters and replacing the unqualified optical elements; re-measuring related parameters, determining whether the corresponding parameters in the two interferograms exceed threshold values or not, if the corresponding parameters do not exceed the threshold values, determining that the two interferograms are qualified, otherwise, determining that the two interferograms are unqualified; the device is simple in structure and low in cost, and can accurately and quantitatively detect the collimation wavefront quality of visible light or invisible light by directly utilizing an existing light path and interferogram acquisition and analysis system.

A boron neutron capture therapy device and target exchange method that are compatible with rotating targets and fixed targets are provided. The device includes a beam shaper and a vacuum line (6). The beam shaper includes a base (1) with a reflector module (2) and a back reflector (4) respectively installed on both sides of the base (1). A compatible cavity (3) capable of accommodating a rotating target module (7) is installed on the base (1). When a rotating target is used, the rotating target module (7) is attached to the compatible cavity (3) and the vacuum line (6) is connected to the rotating target module (7). When a fixed target is used, the fixed target is detachably attached to the vacuum line (6). The boron neutron capture therapy device can simultaneously meet the placement needs of fixed and rotating targets, facilitating equipment adjustment and updates.

The utility model discloses a machine vision image acquisition and reflection device, and relates to the technical field of image acquisition and reflection devices. A camera is placed on the clamping seat, the rotary knob is rotated, the threaded rod is in threaded fit with the threaded hole, so that the clamping plate is driven to clamp the camera, then the electric telescopic rod is started to lift the clamping seat to a proper height according to actual use conditions, and the position of the camera is determined. Then an object needing image acquisition is placed on the bearing table, the servo motor is started, the position of the reflection base is flexibly adjusted according to the size and shape of the object, so that the left side reflection mirror and the right side reflection mirror are fixed to proper positions, then the telescopic rod is adjusted to move downwards by a proper length, and the back side reflection mirror is fixed to a proper position; turning on a light supplement lamp to supplement light to the object, and performing final image acquisition on the object through a camera; when the object is in an irregular shape and is too large, the object can be fully collected by rotating the bearing table.

The invention discloses a solid laser, which relates to the technical field of lasers and comprises a pumping source, a slab crystal assembly, a retroreflector, a turning prism and an output mirror, the retroreflector, the turning prism and the output mirror can form a resonant cavity; the lath crystal assembly is arranged in the resonant cavity; the pumping source comprises two pumping modules, the two pumping modules are arranged on the two sides of the lath crystal assembly respectively, and a non-light-emitting area of each pumping module is provided with a reflecting face. Each pumping module is used for emitting pumping light to the lath crystal assembly, at least part of the pumping light emitted by each pumping module can be absorbed by the lath crystal assembly, and the reflecting surface of each pumping module can reflect the pumping light which is not absorbed by the lath crystal assembly back to the lath crystal assembly. The device can operate without temperature control in a wide environment temperature area.

A method for producing a holographic back reflector using an exposure device comprises arranging a photopolymer film in a beam path of the exposure device. The beam path includes a divergent section between a focusing point and a concave mirror, as well as a convergent section superimposed on the divergent section. By emitting coherent light along the beam path, the two components of the light interfere in the region of the photopolymer film, thereby forming a holographic-optical element in the film. This method enables the production of a high-quality holographic back reflector.

The present invention relates to a lighting device for a vehicle, having: an elongated light conductor comprising an end face and a side surface for input-coupling light into the light conductor, and the light energy is totally reflected on the side surface along the input-coupling direction; an elongated reflector which is arranged following the light conductor, and the reflector is at least partially arranged behind the light conductor along the main emission direction of the lighting device, the reflector comprises a reflector surface, and the reflector surface has a width extension dimension larger than that of the light conductor; the light conductor is configured such that light is output-coupled on the side surface facing the back side of the reflector and / or the lateral side surface and the side surface of the front face facing away from the reflector, the light conductor and the reflector respectively have angular regions, wherein a section of the light conductor and a section of the reflector form an acute angle or a right angle or an obtuse angle, the reflector has a non-reflecting section configured as a void section in the angular region of the reflector, and the light output-coupled from the light conductor towards the reflector on the non-reflecting section is not reflected along the main emission direction.

An infrared hairdryer of the present disclosure includes a housing with an air inlet and an air outlet. The housing includes a motorized fan, an infrared radiation source for emitting IR radiant heat, and a back reflector positioned between the fan and the infrared emitter. A filter is positioned at the outlet of the hairdryer, allowing IR wavelengths comprised between 1.2 μm and 15 μm, preferably between 2 and 8 μm to leave the hairdryer and stopping the IR wavelengths out of this range. The infrared source has a thermal inertia allowing the infrared source to reach a temperature up to 1000° C. in less than 10 seconds, preferably in less than 5 seconds.

The invention relates to a light emitting diode structure and a manufacturing method. The solar cell comprises a substrate, a back reflector, a buffer layer, a first semiconductor layer, an active layer and a second semiconductor layer, a Mesa structure extending to the first semiconductor layer is arranged along the second semiconductor layer, and the Mesa structure comprises a step surface and a groove which enable part of the first semiconductor layer to be exposed; the transparent conducting layer is arranged on the second semiconductor layer; the current blocking layer comprises a first insulating layer I and a first insulating layer II; the first bonding pad partially penetrates through the transparent conductive layer and the first insulating layer and is respectively contacted with the transparent conductive layer, the first insulating layer and the second semiconductor layer, and the second bonding pad partially contacts with the bottom wall of the groove; the second insulating layer is at least partially arranged on the transparent conductive layer; and the plurality of micro-disc resonant cavity structures are distributed on the surface of the second insulating layer and are in contact with the surface of the transparent conductive layer through the micropores. By introducing the micro-disc resonant cavity structure, the optical coupling efficiency and the light extraction efficiency are remarkably improved.

Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.

A semiconductor LED includes a p-doped layer, an n-doped layer, and an active layer, and has an anode electrical contact and a cathode electrical contact. The active layer extends to the side surface of the LED; the anode contact is on the central region of the p-doped layer and leaves a peripheral region without being electrically coupled directly to the anode contact, thereby reducing non-radiative recombination at the side surface. The LED may include a front reflector having a central opening aligned with the anode contact. The LED may include a front reflector, a side reflector, and a back reflector to form an optical cavity enclosing the n-doped and p-doped semiconductor layers and the active layer.

The invention relates to a wide beam multiband antenna. Specifically, an antenna includes a radome having walls at a top, a bottom, a front, a rear, a first side, and a second side, forming a cavity that receives an antenna assembly. The antenna assembly includes a multiband antenna element and a reflector spaced apart from and facing the antenna element. The multiband antenna element includes a high-band antenna having a high-band radiation arm and a low-band antenna having a low-band radiation arm. The reflector includes a main reflector panel, front and rear reflector wings, main sidewalls on opposite sides of the main reflector panel, front and rear sidewalls on opposite sides of the front and rear reflector wings, and front and rear inner walls at interfaces of the main reflector panel with the front and rear reflector wings.

The utility model is suitable for the technical field of solar cells, and particularly relates to a solar cell with a back reflector and a photovoltaic assembly, the solar cell comprises a cell main body, the cell main body comprises a light-facing surface and a backlight surface opposite to the light-facing surface; the plurality of electrodes are arranged on the backlight surface and are in contact with the battery main body; the back reflector is arranged on the backlight face and located in the area where the electrodes are not arranged, the back reflector comprises a first dielectric layer and a second dielectric layer which are alternately stacked, and the refractive index of the first dielectric layer is larger than that of the second dielectric layer. According to the solar cell with the back reflector, the back reflector is arranged on the backlight surface of the cell main body, so that the back reflector and the cell main body of the solar cell do not need to be independently prepared and then assembled, and the preparation process is simpler; moreover, the back reflector is formed by overlapping the first dielectric layer and the second dielectric layer with different refractive indexes, so that the reflection effect of the back surface of the solar cell on the transmitted light of the solar cell can be improved, and the cell efficiency is improved.

The utility model discloses a passivation contact cell with a selective polycrystalline silicon layer. A selective polycrystalline silicon layer doping technology is adopted in the cell, doped polycrystalline silicon layers are arranged in a local area of a polycrystalline silicon layer at intervals, local grooves are formed in a back passivation antireflection layer at intervals, metal grid lines are in contact with the doped polycrystalline silicon layers only in groove areas and in non-local opening areas, and the metal grid lines are suspended on an antireflection film layer. And no contact with the doped polycrystalline silicon layer is formed. As the intrinsic polycrystalline silicon layer does not have a free carrier absorption phenomenon, parasitic absorption cannot be formed on photons of which the wavelength is greater than 950nm, and optical loss can be remarkably reduced. The arrangement of the local opening grooves can reduce the absorption of the metal grid lines to long-wave photons, the metal grid lines in the non-local opening area and the antireflection film layer can form a back reflector, the long-wave photons can be reflected back to the silicon substrate more effectively to be absorbed and utilized again, and the utilization rate of the long-wave photons is improved.

The utility model discloses a kind of projection display optical systems of secondary turn-back, optical system is sequentially provided with: illumination module, lens module, first reflector, second reflector and projection curtain from object plane to image plane along light direction;Illumination module, lens module, first reflector three are sequentially arranged on the same horizontal plane;Second reflector and projection curtain two are sequentially arranged on the same horizontal plane, and second reflector and projection curtain are set on illumination module, lens module, first reflector three;The mirror surface of first reflector is towards lens module, the mirror surface of second reflector is towards projection curtain;Illumination module is used to emit light beam;Lens module is used to enlarge shaping light beam;First reflector and second reflector are used for reflecting light beam;Projection curtain is used for receiving light beam projection.This application can significantly reduce projection distance, reduce optical system volume and improve image quality by using two pieces of turn-back reflector of first reflector and second reflector.