127 results about "Metallic grating" patented technology

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention relates to a laminated staggered sub-wavelength polarization grating structure and a preparation method thereof, through staggered arrangement of a first metal grating layer and a second metal grating layer, transmission of polarized light of a transverse electric field can be effectively inhibited, and the extinction ratio is remarkably improved. Through the substrate, the first dielectric layer, the second dielectric layer, the first metal grating layer, the third dielectric layer and the second metal grating layer which are sequentially arranged from bottom to top, the whole device obtains a higher extinction ratio while keeping high transmittance, the overall structure is simple, the processing difficulty and cost are reduced, and the production efficiency is improved. And the number of the used dielectric layers and metal layers is small, the thickness requirement is low, and therefore it is ensured that the cost is controllable.

The invention discloses a polarization sensitive type broadband absorber based on metal-medium stacking, and relates to the technical field of micro-nano photonic devices and infrared detection. The absorber sequentially comprises a bottom-layer high-loss metal reflecting layer, a multi-layer stacked composite dielectric cavity structure and a top-layer sub-wavelength metal grating from bottom to top, according to impedance matching and interference resonance theories, a broadband absorption substrate is constructed through a multi-layer film structure at the bottom, and light energy is converted into heat energy by utilizing the high loss characteristic of bottom layer metal; plasmon resonance is excited through the top metal grating, the coupling efficiency of TM polarized light is enhanced, and TE polarized light is cut off; the above structural design successfully realizes efficient broadband absorption and high polarization extinction ratio in an infrared band. The structure is simple in design, is compatible with a CMOS technology, and has excellent wide-angle stability. And meanwhile, polarization screening can be realized without an external polaroid, and miniaturization and integration of an infrared detection system are facilitated.

The invention discloses a vertical plasmon waveguide device structure capable of being coupled by an optical fiber and a preparation method of the vertical plasmon waveguide device structure, and belongs to the technical field of integrated optoelectronics, and the structure is composed of a pair of metal gratings and a vertical metal-medium-metal plasmon waveguide. The structure comprises a silicon substrate layer, a lower metal layer, a dielectric layer and an upper metal layer which are arranged from bottom to top and is divided into a grating area and a waveguide area, the grating area comprises a dielectric grating area and a metal grating layer, and the waveguide structure comprises the lower metal layer, the dielectric layer and the upper metal layer. According to the design of the invention, the limitation of mass production caused by an overlay process of a mode converter between heterogeneous integrated waveguides is avoided, and the preparation robustness of the device is improved. The optical insertion loss caused by the roughness of the side wall of the waveguide is improved in a metal deposition-dielectric spin coating-metal deposition mode, and the dielectric layer can be replaced to realize multiple device functions.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, the upper part of the substrate is provided with a ridge optical waveguide, and the upper part of the ridge optical waveguide is provided with a metal cover Bragg reflection grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

The invention discloses a dual polarization-based terahertz broadband polarization converter metasurface, which is an efficient terahertz wave linear polarization converter based on a square bracket-shaped metal patch unit structure array, and is formed by adding a pair of orthogonal metal gratings on the upper side and the lower side of the square bracket-shaped metal patch unit structure array. According to the invention, the orthogonal metal grating and the square bracket-shaped metal patch form a Fabry-Perot cavity, so that cross polarization reflection and co-polarization transmission can be effectively prevented, and the transmission of cross polarization waves is remarkably increased. The amplitude coding metasurface is constructed by changing the amplitude and utilizing the transmission characteristics of incidence of different linear polarization waves. Under the incidence of linear polarization terahertz waves, a dual-polarization space imaging function is realized. The designed metasurface shows the characteristics of ultra wide band and high transmission efficiency, and has potential application value in the field of wireless communication.

To provide a grating and a manufacturing method therefor which can prevent tilting and falling out of a main member even when a large force from a heavy vehicle is applied, and which can also reduce a burden of inventory management of component members such as a side abutment member.SOLUTION: In a metallic grating in which multiple band plate-like main members 1 are arranged in parallel with each other with a band width direction as a vertical direction and side abutment members 3 are fixed to both sides thereof, the side abutment member 3 is a bend-processed product of a side view reverse L-shaped member having, in a bend region 33 from a vertical part 31 to a horizontal part 32 including a part of the vertical part, an elongated hole 35 serving as a connection point with the main member, such that by fixing the side abutment member 3 to both sides of the main member 1, a lower part 16 on both sides of the main member abuts against the vertical part 31 while an upper part 17 protruding more than the lower part is inserted into a vertical part 31 side of the elongated hole 35, and an overhanging upper end portion 171 of the upper part 17 fills a horizontal part 32 side of the elongated hole 35 so that an upper end surface 171a thereof is flush with an upper surface 32a of the horizontal part 32.SELECTED DRAWING: Figure 1

The invention relates to the technical field of antennas, and discloses a folding Cassegrain antenna, a polarization flipping focusing metasurface is located below a frequency-polarization adjustable metasurface, and the distance between the polarization flipping focusing metasurface and the frequency-polarization adjustable metasurface is half of the focal length of the polarization flipping focusing metasurface; the linear polarization feed source is located at the focus of the polarization overturning focusing metasurface and used for radiating y polarization waves; the frequency-polarization adjustable metasurface comprises a plurality of polarization rotation units which are arranged periodically, and each polarization rotation unit comprises a flexible substrate located on the upper layer, two single-opening resonance rings which are etched on the flexible substrate and are opposite in opening direction, and a metal grating located on the lower layer. By folding the flexible substrate, the polarization rotation unit forms a left-handed or right-handed chiral structure, and the technical effects of reconfigurable switching of x-polarized waves, left-handed circularly-polarized waves and right-handed circularly-polarized waves and adjustable central working frequency of the folding Cassegrain antenna can be achieved.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention relates to an asymmetric transmission wavefront modulation method based on a multilayer metasurface, and belongs to the technical field of polarization optics application. The problems that an existing metasurface unit is complex in structure and has symmetrical transmission limitation are solved. The cascaded metal grating and the metal'bidirectional arrow 'are used as basic structure units, the spatial symmetry in the electromagnetic wave propagation direction is broken, the asymmetric transmission characteristic is obtained, meanwhile, full-range phase modulation is achieved, electromagnetic waves incident in the two directions can be independently regulated and controlled by changing the size parameters of the unit structures, and the structure is simple. Corresponding deflection and convergence effects are achieved respectively. Therefore, the invention provides a microwave band sub-wavelength unit structure, which has the advantages of easiness in design, easiness in processing and the like, has an asymmetric property, and is applied to the fields of holographic display, information encryption and the like.

The invention relates to the field of photoelectric detection, and discloses a photoelectric detector based on a grating structure and a photoelectric detection method.The photoelectric detector comprises a substrate layer and a photoelectric material layer, and the photoelectric material layer comprises a metal grating structure, a first electrode, a second electrode, a first photoelectric confinement material and a second photoelectric confinement material; the metal grating structure comprises a first metal grating and a second metal grating, the first photoelectric confinement material and the second photoelectric confinement material are connected, and a depletion junction region is formed at an interface; the first metal grating and the second metal grating are symmetrically arranged on two sides of the depletion junction region and are used for exciting a plasmon mode to form a local light field; the first electrode is connected with the first photoelectric confinement material, the second electrode is connected with the second photoelectric confinement material, and the first electrode and the second electrode are used for extracting photon-generated carriers. According to the technical scheme provided by the invention, the separation efficiency of photon-generated carriers and the response performance of the photoelectric detector can be improved.

The application discloses a kind of phase electromagnetic metasurface design methods based on two-phase method, mainly solve the problem of electromagnetic metasurface structure complexity when existing technology electromagnetic metasurface is simultaneously regulated in amplitude phase.It is implementation scheme: initialization electromagnetic metasurface parameter;Electromagnetic metasurface unit required by two-phase method is calculated phase matrix;Design the electromagnetic metasurface unit including metal grating layer, two layers of dielectric layer and metal patch, and draw the phase table of the electromagnetic metasurface unit;According to the required phase of each unit of electromagnetic metasurface and the phase table of electromagnetic metasurface unit, the state of each unit of electromagnetic metasurface is adjusted to obtain adjusted electromagnetic metasurface;Feed horn is placed above adjusted electromagnetic metasurface, and radio frequency signal is added to feed horn, to generate required beam, complete phase electromagnetic metasurface design.The application can reduce the complexity of electromagnetic metasurface structure, improve the beam design capability of electromagnetic metasurface, and can be used for wireless transmission, communication system.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on a top surface HR layer and a planar metal grating and a preparation method, and the laser comprises a gain chip, an optical waveguide, the planar metal grating and a covering layer, the planar metal grating prepared by adopting an electronic evaporation plating process replaces traditional complex three-dimensional etching, so that the controllable precision and flatness of the grating structure are greatly improved, an InP secondary epitaxy process is abandoned, the whole process flow is simplified, the production cost is reduced, the product performance consistency and the product yield are improved, and the production cost is reduced. The reflection filtering efficiency is remarkably improved, the purity of the Bragg reflection spectrum is guaranteed, the narrow linewidth performance of the laser is achieved, the covering layer covers the plane metal grating, the problem that semiconductor secondary epitaxial lattices are not matched is effectively solved, diffraction light can be restrained, light energy overflow is reduced, and the freedom degree is increased through the design of the outer cavity structure.

The invention provides a transverse PIN photoelectric detector based on surface plasmon enhancement, which belongs to the technical field of photoelectric detectors and comprises a substrate, a back enhanced reflection film layer, a semiconductor device layer, a plasmon array and an antireflection film layer from bottom to top in sequence. A P + region and an N + region of the semiconductor device layer are symmetrically distributed on two sides of the non-doped intrinsic layer to form a transverse PIN junction; the plasmon array is of a metal grating structure matched with the 660 nm / 940 nm dual-band, resonance is generated by coupling with incident light, and a light field is localized near a depletion region of the non-doped intrinsic layer. The carrier transport path is shortened through the transverse structure, the response speed is increased, meanwhile, dual-band light absorption is enhanced through the light local effect of surface plasmons, cooperation of high responsivity, high quantum efficiency and high response speed is achieved, the preparation technology is compatible with the CMOS technology, and the device is suitable for the scenes such as blood oxygen detection.

The embodiment of the present application discloses a kind of transmission type terahertz absorption structure and preparation method thereof.Transmission type terahertz absorption structure includes at least one transmission type terahertz absorption composite film layer, transmission type terahertz absorption composite film layer includes substrate and the metal grating layer, insulating layer and graphene layer that are sequentially stacked in substrate side;Wherein metal grating layer and graphene layer are electrically connected with external power supply.The technical scheme of the embodiment of the present application is based on electromagnetic wave theory and the electrical properties of graphene, by additional voltage control Fermi level of graphene, adjust the absorption of absorption structure to terahertz, make the terahertz wave that pass through the present absorption structure have different intensity information under the influence of external voltage, play the role of switch, and have the advantages of active regulation, real-time control, accurate control, suitable for terahertz spectrum imaging analysis, single-pixel imaging and spectrum measurement etc.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, the upper part of the substrate is provided with a ridge optical waveguide, and the upper part of the ridge optical waveguide is provided with a metal cover Bragg reflection grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

The invention relates to the technical field of gratings, in particular to a metal wire grating structure and a preparation method thereof.The metal wire grating structure comprises a substrate, a reflecting layer, a transparent dielectric layer and a metal grating layer which are sequentially stacked from bottom to top; wherein the thickness of the metal grating layer is not greater than 30nm; when incident light irradiates the metal wire grating structure from the side, away from the transparent dielectric layer, of the metal grating layer, part of the incident light is directly reflected by the metal grating layer to form a first path of reflected light, and the remaining part of the incident light enters the transparent dielectric layer through intervals between the metal wires. And after being reflected by the reflecting layer, the first path of reflected light is emitted out again through the transparent dielectric layer and the interval between the metal wires to form a second path of reflected light, and the phase difference between the first path of reflected light and the second path of reflected light is odd times of pi. According to the invention, the anti-pollution capability and the anti-wear capability of the grating are improved at least on the premise of ensuring that the grating has relatively high diffraction efficiency.

The present invention discloses an optical structure for realizing dual-channel high-efficiency light absorption based on graphene, which includes a metal grating, a dielectric layer, and graphene nanoribbons. The metal grating has grooves, the dielectric layer is filled with a dielectric, the dielectric layer is located in the grooves, there are a first cavity and a second cavity between the dielectric layer and the metal grating, the first cavity and the second cavity are oppositely arranged with the dielectric layer as the center, and the number of the graphene nanoribbons is two, which are respectively located on the first cavity and the second cavity. By partially filling the grooves of the metal grating with a dielectric, the graphene nanoribbons laid above interact with the metal grating, the first cavity, and the second cavity respectively, jointly exciting the surface plasmon resonance of graphene to achieve enhanced dual-channel high-efficiency light absorption.

The application discloses a kind of methods for realizing cylindrical grating coherent Smith-Purcell radiation enhancement, Smith-Purcell radiation is a kind of incoherent spontaneous radiation, the power of radiation is very low, not easy to detect and application, to realize high intensity Smith-Purcell radiation, the application proposes based on quasi-continuous domain bound state enhancement method.First, the electron bunch string is generated using the electron gun;Then, make the electron bunch string pass through the surface of cylindrical metal grating, the repetition frequency of electron bunch string is used as the resonance frequency of quasi-continuous domain bound state, to realize the enhancement of coherent Smith-Purcell super-radiation, and finally the electron enters the collecting electrode.The cylindrical grating coherent Smith-Purcell radiation enhancement method proposed in the application is simple to operate, and has obvious effect, easy integration, low cost and other characteristics.

This invention relates to the field of optoelectronic device technology, and in particular to a laser based on a top-surface metal layer and a planar metal grating, and its fabrication method. The laser comprises a gain chip, an optical waveguide, a planar metal grating, a capping layer, and a metal layer. The planar metal grating fabricated using an electronic evaporation deposition process replaces the traditional complex three-dimensional etching, significantly improving the controllable precision and flatness of the grating structure. It eliminates the InP secondary epitaxial process, simplifying the overall process flow, reducing production costs, and simultaneously improving product performance consistency and yield. It also significantly improves reflection filtering efficiency, ensures the purity of the Bragg reflection spectrum, and helps achieve narrow linewidth performance in lasers. The capping layer above the planar metal grating effectively solves the problem of lattice mismatch in semiconductor secondary epitaxy, and can also confine diffracted light, reducing light energy leakage. The external cavity structure design increases the degree of freedom.

The invention belongs to the technical field of optoelectronic devices, and particularly relates to a planar metal grating laser based on two different gratings and with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, a back optical waveguide, an annular resonance optical waveguide and a planar metal grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is replaced by two metal plane gratings with similar grating constants and a phase difference of lambda / 2, the advantages that the plane metal gratings do not need to be etched and are smoother and more regular are utilized, and a'mouth-to-mouth 'coupling butt joint mode of a gain chip and an optical waveguide substrate is combined; the covering layer grows on the plane metal grating, and the high-reflection HR film is plated on the covering layer, so that the grating reflection efficiency is effectively improved, the optical energy loss of the optical waveguide is reduced, meanwhile, secondary epitaxy is omitted, the process is simplified, and the cost is reduced.

The application discloses an ultra-wideband polarization converter metasurface for converging lenses and spatial imaging. The cell of the metasurface is composed of two metal gratings, two pairs of L-shaped metal patches and two dielectric plates. The metasurface of the application works in the range of 0.5 to 1.8 THz, the transmission coefficient is greater than 0.87, the relative bandwidth reaches 113%, the polarization conversion rate remains close to 100%, and the phase covers 360°. The metasurface has the advantages of simple structure, small size, high bandwidth, good polarization characteristics, easy integration, low loss and simple preparation process. The metasurface combines the changes of geometric phase and amplitude, which can not only realize two-dimensional focusing lenses by using phase changes, but also realize spatial imaging functions by using amplitude changes. The research results show that the metasurface provides a new way for the flexibility of terahertz wave polarization and phase manipulation, and opens up a new way for the dynamic operation of terahertz wave fronts.

The invention relates to the technical field of optics, and discloses a broadband circular polarization terahertz source and application thereof, and the broadband circular polarization terahertz source comprises a free electron beam moving along a predetermined direction and a stacked bianisotropic metasurface located above the free electron beam; wherein the stacked bianisotropic metasurface comprises at least two layers of metal gratings which form a stacked structure; the at least one dielectric plate is used for separating the metal grating; wherein the number of layers of the dielectric plate is one less than that of the metal grating; and the metal grating and the dielectric plate form a periodic structure together, and are used for coupling evanescent wave energy of the free electron beam into multiple resonant modes so as to excite broadband circular polarization terahertz radiation. According to the technical scheme provided by the invention, the tunable and compact terahertz source with high power output can be realized.

The application provides a method for exciting interband plasmons of double-layer graphene and a prepared device, and belongs to the technical field of optical devices, and comprises the following steps: sequentially laminating a third insulating layer, double-layer graphene and a second insulating layer to form a vertical heterojunction, transferring the vertical heterojunction to a substrate on which a first insulating layer is grown, obtaining a clean initial device substrate through heating separation and solvent cleaning, then preparing a nanoscale metal grating layer on the vertical heterojunction surface of the initial device substrate to form a device intermediate body, and preparing electrodes on the left and right sides of the device intermediate body, so that the electrodes are electrically connected with the double-layer graphene, an electrical regulation channel of the Fermi surface of the double-layer graphene is constructed, and a complete device for exciting interband plasmons is obtained. The nanoscale metal grating array can effectively excite interband plasmons of double-layer graphene, significantly improve the light-plasmon coupling efficiency and realize energy regulation of interband plasmons.

The invention discloses a narrow-band filter based on a micro-nano grating, a spectrum chip and an imaging method, and belongs to the field of optical filters, the narrow-band filter comprises a dielectric layer, a metal grating layer and a substrate which are sequentially stacked from top to bottom, the dielectric layer covers the top of the metal grating layer and is wrapped between metal grating lines of the metal grating layer, and the metal grating layer covers the substrate. The thickness of the dielectric layer is 3000nm, the thickness of the metal grating layer is 40nm, and the distance between adjacent metal grating lines of the metal grating layer is 120nm; metal grating lines of the metal grating layer form periodic structures according to a periodic rule, one periodic structure forms a channel with one filter unit corresponding to one specific wavelength, multi-band spectral information is separated by selectively transmitting light with the specific wavelength, and all the periodic structures jointly form a narrow-band filter array. According to the invention, an artificial microstructure is adopted to realize a pixel-level light splitting effect, and the volume of a hyperspectral imaging system can be obviously reduced.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, a grating optical waveguide substrate, an optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the grating optical waveguide substrate.

The invention discloses a millimeter wave high-gain planar super-structure grating antenna, which structurally comprises an excitation waveguide with an electromagnetic wave incident port, a quasi-periodically arranged metal grating structure and a two-dimensional dielectric waveguide with a single-sided conductive layer at the bottom. The antenna adopts a quadruple rotational symmetry structure design, and ensures that radiation modes excited by four ports have consistency. The large-aperture antenna is excited based on a traveling wave mode, periodic modulation of a dielectric waveguide propagation mode is realized through grating loading, and energy is prompted to be radiated in a fast wave form; and meanwhile, a small number of grating units are non-uniformly arranged, so that the grating lobe effect of the antenna array is effectively reduced. Electrically large-size aperture excitation is realized through a low-complexity planar structure, and the antenna has the characteristics of high efficiency and high gain, and can be applied to a millimeter wave communication system.

The application relates to the technical field of semiconductor lasers, in particular to a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, which comprises a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, including a substrate layer and a back ridge waveguide; the back ridge waveguide is arranged on the upper end face of the substrate layer; the back ridge waveguide comprises a composite structure grating section located on the left side and a gain region waveguide section located on the right side; an i-layer semiconductor Bragg grating is etched in the composite structure grating section, and i is a natural number; a metal grating electrode is covered on the top of the composite structure grating section; a quantum well layer is arranged in the gain region waveguide section; a gain region electrode is covered on the top of the gain region waveguide section; and an inclined end face is arranged at the left end of the gain region waveguide section. The application overcomes the inherent defects of traditional DBR, DFB and traditional external cavity lasers from the aspects of structure and mechanism.