78 results about "Metallic grating" patented technology

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention relates to a laminated staggered sub-wavelength polarization grating structure and a preparation method thereof, through staggered arrangement of a first metal grating layer and a second metal grating layer, transmission of polarized light of a transverse electric field can be effectively inhibited, and the extinction ratio is remarkably improved. Through the substrate, the first dielectric layer, the second dielectric layer, the first metal grating layer, the third dielectric layer and the second metal grating layer which are sequentially arranged from bottom to top, the whole device obtains a higher extinction ratio while keeping high transmittance, the overall structure is simple, the processing difficulty and cost are reduced, and the production efficiency is improved. And the number of the used dielectric layers and metal layers is small, the thickness requirement is low, and therefore it is ensured that the cost is controllable.

The invention discloses a polarization sensitive type broadband absorber based on metal-medium stacking, and relates to the technical field of micro-nano photonic devices and infrared detection. The absorber sequentially comprises a bottom-layer high-loss metal reflecting layer, a multi-layer stacked composite dielectric cavity structure and a top-layer sub-wavelength metal grating from bottom to top, according to impedance matching and interference resonance theories, a broadband absorption substrate is constructed through a multi-layer film structure at the bottom, and light energy is converted into heat energy by utilizing the high loss characteristic of bottom layer metal; plasmon resonance is excited through the top metal grating, the coupling efficiency of TM polarized light is enhanced, and TE polarized light is cut off; the above structural design successfully realizes efficient broadband absorption and high polarization extinction ratio in an infrared band. The structure is simple in design, is compatible with a CMOS technology, and has excellent wide-angle stability. And meanwhile, polarization screening can be realized without an external polaroid, and miniaturization and integration of an infrared detection system are facilitated.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention relates to the field of photoelectric detection, and discloses a photoelectric detector based on a grating structure and a photoelectric detection method.The photoelectric detector comprises a substrate layer and a photoelectric material layer, and the photoelectric material layer comprises a metal grating structure, a first electrode, a second electrode, a first photoelectric confinement material and a second photoelectric confinement material; the metal grating structure comprises a first metal grating and a second metal grating, the first photoelectric confinement material and the second photoelectric confinement material are connected, and a depletion junction region is formed at an interface; the first metal grating and the second metal grating are symmetrically arranged on two sides of the depletion junction region and are used for exciting a plasmon mode to form a local light field; the first electrode is connected with the first photoelectric confinement material, the second electrode is connected with the second photoelectric confinement material, and the first electrode and the second electrode are used for extracting photon-generated carriers. According to the technical scheme provided by the invention, the separation efficiency of photon-generated carriers and the response performance of the photoelectric detector can be improved.

The application discloses a kind of phase electromagnetic metasurface design methods based on two-phase method, mainly solve the problem of electromagnetic metasurface structure complexity when existing technology electromagnetic metasurface is simultaneously regulated in amplitude phase.It is implementation scheme: initialization electromagnetic metasurface parameter;Electromagnetic metasurface unit required by two-phase method is calculated phase matrix;Design the electromagnetic metasurface unit including metal grating layer, two layers of dielectric layer and metal patch, and draw the phase table of the electromagnetic metasurface unit;According to the required phase of each unit of electromagnetic metasurface and the phase table of electromagnetic metasurface unit, the state of each unit of electromagnetic metasurface is adjusted to obtain adjusted electromagnetic metasurface;Feed horn is placed above adjusted electromagnetic metasurface, and radio frequency signal is added to feed horn, to generate required beam, complete phase electromagnetic metasurface design.The application can reduce the complexity of electromagnetic metasurface structure, improve the beam design capability of electromagnetic metasurface, and can be used for wireless transmission, communication system.

The invention provides a transverse PIN photoelectric detector based on surface plasmon enhancement, which belongs to the technical field of photoelectric detectors and comprises a substrate, a back enhanced reflection film layer, a semiconductor device layer, a plasmon array and an antireflection film layer from bottom to top in sequence. A P + region and an N + region of the semiconductor device layer are symmetrically distributed on two sides of the non-doped intrinsic layer to form a transverse PIN junction; the plasmon array is of a metal grating structure matched with the 660 nm / 940 nm dual-band, resonance is generated by coupling with incident light, and a light field is localized near a depletion region of the non-doped intrinsic layer. The carrier transport path is shortened through the transverse structure, the response speed is increased, meanwhile, dual-band light absorption is enhanced through the light local effect of surface plasmons, cooperation of high responsivity, high quantum efficiency and high response speed is achieved, the preparation technology is compatible with the CMOS technology, and the device is suitable for the scenes such as blood oxygen detection.

The embodiment of the present application discloses a kind of transmission type terahertz absorption structure and preparation method thereof.Transmission type terahertz absorption structure includes at least one transmission type terahertz absorption composite film layer, transmission type terahertz absorption composite film layer includes substrate and the metal grating layer, insulating layer and graphene layer that are sequentially stacked in substrate side;Wherein metal grating layer and graphene layer are electrically connected with external power supply.The technical scheme of the embodiment of the present application is based on electromagnetic wave theory and the electrical properties of graphene, by additional voltage control Fermi level of graphene, adjust the absorption of absorption structure to terahertz, make the terahertz wave that pass through the present absorption structure have different intensity information under the influence of external voltage, play the role of switch, and have the advantages of active regulation, real-time control, accurate control, suitable for terahertz spectrum imaging analysis, single-pixel imaging and spectrum measurement etc.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, the upper part of the substrate is provided with a ridge optical waveguide, and the upper part of the ridge optical waveguide is provided with a metal cover Bragg reflection grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

The invention relates to the technical field of gratings, in particular to a metal wire grating structure and a preparation method thereof.The metal wire grating structure comprises a substrate, a reflecting layer, a transparent dielectric layer and a metal grating layer which are sequentially stacked from bottom to top; wherein the thickness of the metal grating layer is not greater than 30nm; when incident light irradiates the metal wire grating structure from the side, away from the transparent dielectric layer, of the metal grating layer, part of the incident light is directly reflected by the metal grating layer to form a first path of reflected light, and the remaining part of the incident light enters the transparent dielectric layer through intervals between the metal wires. And after being reflected by the reflecting layer, the first path of reflected light is emitted out again through the transparent dielectric layer and the interval between the metal wires to form a second path of reflected light, and the phase difference between the first path of reflected light and the second path of reflected light is odd times of pi. According to the invention, the anti-pollution capability and the anti-wear capability of the grating are improved at least on the premise of ensuring that the grating has relatively high diffraction efficiency.

The application discloses a kind of methods for realizing cylindrical grating coherent Smith-Purcell radiation enhancement, Smith-Purcell radiation is a kind of incoherent spontaneous radiation, the power of radiation is very low, not easy to detect and application, to realize high intensity Smith-Purcell radiation, the application proposes based on quasi-continuous domain bound state enhancement method.First, the electron bunch string is generated using the electron gun;Then, make the electron bunch string pass through the surface of cylindrical metal grating, the repetition frequency of electron bunch string is used as the resonance frequency of quasi-continuous domain bound state, to realize the enhancement of coherent Smith-Purcell super-radiation, and finally the electron enters the collecting electrode.The cylindrical grating coherent Smith-Purcell radiation enhancement method proposed in the application is simple to operate, and has obvious effect, easy integration, low cost and other characteristics.

This invention relates to the field of optoelectronic device technology, and in particular to a laser based on a top-surface metal layer and a planar metal grating, and its fabrication method. The laser comprises a gain chip, an optical waveguide, a planar metal grating, a capping layer, and a metal layer. The planar metal grating fabricated using an electronic evaporation deposition process replaces the traditional complex three-dimensional etching, significantly improving the controllable precision and flatness of the grating structure. It eliminates the InP secondary epitaxial process, simplifying the overall process flow, reducing production costs, and simultaneously improving product performance consistency and yield. It also significantly improves reflection filtering efficiency, ensures the purity of the Bragg reflection spectrum, and helps achieve narrow linewidth performance in lasers. The capping layer above the planar metal grating effectively solves the problem of lattice mismatch in semiconductor secondary epitaxy, and can also confine diffracted light, reducing light energy leakage. The external cavity structure design increases the degree of freedom.

The invention belongs to the technical field of optoelectronic devices, and particularly relates to a planar metal grating laser based on two different gratings and with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, a back optical waveguide, an annular resonance optical waveguide and a planar metal grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is replaced by two metal plane gratings with similar grating constants and a phase difference of lambda / 2, the advantages that the plane metal gratings do not need to be etched and are smoother and more regular are utilized, and a'mouth-to-mouth 'coupling butt joint mode of a gain chip and an optical waveguide substrate is combined; the covering layer grows on the plane metal grating, and the high-reflection HR film is plated on the covering layer, so that the grating reflection efficiency is effectively improved, the optical energy loss of the optical waveguide is reduced, meanwhile, secondary epitaxy is omitted, the process is simplified, and the cost is reduced.

The application discloses an ultra-wideband polarization converter metasurface for converging lenses and spatial imaging. The cell of the metasurface is composed of two metal gratings, two pairs of L-shaped metal patches and two dielectric plates. The metasurface of the application works in the range of 0.5 to 1.8 THz, the transmission coefficient is greater than 0.87, the relative bandwidth reaches 113%, the polarization conversion rate remains close to 100%, and the phase covers 360°. The metasurface has the advantages of simple structure, small size, high bandwidth, good polarization characteristics, easy integration, low loss and simple preparation process. The metasurface combines the changes of geometric phase and amplitude, which can not only realize two-dimensional focusing lenses by using phase changes, but also realize spatial imaging functions by using amplitude changes. The research results show that the metasurface provides a new way for the flexibility of terahertz wave polarization and phase manipulation, and opens up a new way for the dynamic operation of terahertz wave fronts.

The invention relates to the technical field of optics, and discloses a broadband circular polarization terahertz source and application thereof, and the broadband circular polarization terahertz source comprises a free electron beam moving along a predetermined direction and a stacked bianisotropic metasurface located above the free electron beam; wherein the stacked bianisotropic metasurface comprises at least two layers of metal gratings which form a stacked structure; the at least one dielectric plate is used for separating the metal grating; wherein the number of layers of the dielectric plate is one less than that of the metal grating; and the metal grating and the dielectric plate form a periodic structure together, and are used for coupling evanescent wave energy of the free electron beam into multiple resonant modes so as to excite broadband circular polarization terahertz radiation. According to the technical scheme provided by the invention, the tunable and compact terahertz source with high power output can be realized.

The application provides a method for exciting interband plasmons of double-layer graphene and a prepared device, and belongs to the technical field of optical devices, and comprises the following steps: sequentially laminating a third insulating layer, double-layer graphene and a second insulating layer to form a vertical heterojunction, transferring the vertical heterojunction to a substrate on which a first insulating layer is grown, obtaining a clean initial device substrate through heating separation and solvent cleaning, then preparing a nanoscale metal grating layer on the vertical heterojunction surface of the initial device substrate to form a device intermediate body, and preparing electrodes on the left and right sides of the device intermediate body, so that the electrodes are electrically connected with the double-layer graphene, an electrical regulation channel of the Fermi surface of the double-layer graphene is constructed, and a complete device for exciting interband plasmons is obtained. The nanoscale metal grating array can effectively excite interband plasmons of double-layer graphene, significantly improve the light-plasmon coupling efficiency and realize energy regulation of interband plasmons.

The application relates to the technical field of semiconductor lasers, in particular to a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, which comprises a high-performance intracavity laser based on a micro-gain grating region double-side AR plus an inclined angle, including a substrate layer and a back ridge waveguide; the back ridge waveguide is arranged on the upper end face of the substrate layer; the back ridge waveguide comprises a composite structure grating section located on the left side and a gain region waveguide section located on the right side; an i-layer semiconductor Bragg grating is etched in the composite structure grating section, and i is a natural number; a metal grating electrode is covered on the top of the composite structure grating section; a quantum well layer is arranged in the gain region waveguide section; a gain region electrode is covered on the top of the gain region waveguide section; and an inclined end face is arranged at the left end of the gain region waveguide section. The application overcomes the inherent defects of traditional DBR, DFB and traditional external cavity lasers from the aspects of structure and mechanism.

The utility model relates to the technical field of folded antennas, in particular to a metasurface folded antenna with broadband wave beam scanning capability, which comprises a reconfigurable metasurface, a polarization conversion metasurface and a linear polarization feed source antenna, and is characterized in that the reconfigurable metasurface comprises a first dielectric plate, a second dielectric plate, a first metal grating, a second metal grating and a first metasurface; the polarization conversion metasurface comprises a third dielectric plate and two second metasurfaces, the linear polarization feed source antenna comprises a fourth dielectric plate, a fifth dielectric plate, a third metasurface, a fourth metasurface and a metal bottom plate, and the metasurfaces convert spherical waves emitted by an antenna feed source into plane waves through phase compensation. According to the array antenna, a plane wave is converted into a scannable low-SLL pencil-shaped light beam, the contour of the array antenna is reduced by 2 / 3, a simulation experiment test shows that + / -50-degree beam scanning can be realized on an E surface and an H surface within the broadband range of 8.1-11.3 GHz, the peak gain is 17.8 dBi, the aperture efficiency is 14%, and the 3dB gain bandwidth is greater than 30%.

The application relates to the technical field of gratings, in particular to a metal wire grating structure and a preparation method thereof. The metal wire grating structure comprises, from bottom to top, a substrate, a reflection layer, a transparent dielectric layer and a metal grating layer which are stacked in sequence; wherein the thickness of the metal grating layer is not greater than 30 nm; when incident light irradiates the metal wire grating structure from the side of the metal grating layer far from the transparent dielectric layer, part of the incident light is directly reflected by the metal grating layer to form first reflected light, and the remaining part of the incident light enters the transparent dielectric layer through the intervals between the metal wires, is reflected by the reflection layer, and then is emitted again through the transparent dielectric layer and the intervals between the metal wires to form second reflected light; the phase difference between the first reflected light and the second reflected light is an odd multiple of pi. The application is at least beneficial to improving the anti-pollution ability and the anti-abrasion ability of the grating under the premise of ensuring that the grating has high diffraction efficiency.

The invention discloses a non-staggered double-frequency bidirectional four-channel Janus metasurface, the metasurface is composed of periodically arranged unit structures, each unit comprises an upper resonator group, a middle metal grating layer and a lower resonator group which are separated by a dielectric substrate, and the upper resonator group and the lower resonator group have the same structure; each split ring comprises a large-size split ring and a small-size split ring, and frequency decoupling is achieved by means of resonance selectivity of the large-size split rings and the small-size split rings to different frequencies. The response asymmetry of the Janus structure to the positive and negative incident directions is utilized to realize direction decoupling; 1-bit phase regulation and control are realized by rotating the direction of the split ring, and independent wavefront control of four channels including dual frequency bands and two directions is realized on a single non-staggered metasurface; according to the invention, the problems of low unit utilization rate, serious inter-channel crosstalk and low function integration in the prior art are solved.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a top plane metal grating and a high-reflection dielectric film, which comprises a gain chip, the left end face of the gain chip is plated with a first high-reflection HR film, and the right end face of the gain chip is plated with a first anti-reflection AR film; the right side of the gain chip is provided with a planar metal Bragg grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the planar metal Bragg grating waveguide, and the left end face of the planar metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the planar metal Bragg grating waveguide is plated with a third anti-reflection AR film. Through the centimeter-level planar metal Bragg grating waveguide and the low-loss coupling structure, the narrow linewidth of less than 750Hz and the light beam quality of M2 less than 1.1 are realized.

The invention discloses a terahertz liquid crystal spatial light modulator with large modulation depth and ultra wide band, which belongs to the field of novel artificial electromagnetic materials and terahertz science and comprises an upper-layer quartz substrate, an upper-layer metal grating, an upper-layer pre-oriented film, a liquid crystal layer, a lower-layer pre-oriented film, a lower-layer metal grating and a lower-layer quartz substrate which are sequentially stacked and arranged, the upper-layer metal grating and the lower-layer metal grating are orthogonally arranged in space to form a Fabry-Perot cavity; the liquid crystal layer is filled between the upper pre-oriented film and the lower pre-oriented film, and the liquid crystal director has in-plane pre-orientation; the upper-layer metal grating and the lower-layer metal grating serve as a first electrode and a second electrode respectively and are used for receiving external voltage and controlling the liquid crystal director to be dynamically switched between an in-plane state and an out-of-plane state; according to the invention, the spatial modulation of the incident terahertz wave intensity can be realized, and the problems of photoelectric function conflict and pixel crosstalk of a metal structure are effectively solved.

The invention relates to the technical field of semiconductor lasers, in particular to a laser of an annular etching metal grating based on two different grating constants. The laser quantum well gain layer is arranged on the upper end surface of the substrate; the annular etching metal grating is arranged on an upper waveguide layer of the laser quantum well gain layer; the upper cladding is constructed above the annular etched metal grating through a semiconductor secondary epitaxy method; a top positive electrode; a bottom negative electrode; the AR anti-reflection interface is arranged at the laser output part of the annular etched metal grating, and the light output opening angle phi of the laser output part of the annular etched metal grating is larger than 0 degree and smaller than or equal to 360 degrees; and the HR high-reflection interface is arranged at a non-laser output part of the annular etched metal grating. The invention has the following beneficial effects: 1, all-solid-state large-angle output is realized; 2, high power output and high gain efficiency; 3, narrow linewidth characteristic and high wavelength purity; and 4, the structure is compact and the cost is low.

The application relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth tunable wavelength external cavity laser based on a planar metal grating, which comprises a gain chip, the left and right end faces of the gain chip are respectively coated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and the left and right end faces of the planar metal grating waveguide are respectively coated with a second antireflection film and a third antireflection film; the planar metal grating waveguide comprises a grating waveguide substrate, a back ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, a planar metal grating is arranged on the upper portion of the back ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, the application realizes a 3dB linewidth of less than 700Hz and a beam quality of less than 0.9. 2 ​

The present application relates to the technical field of optoelectronic devices, especially to a top HR layer and two interval lambda / 2 plane metal grating laser, comprising: a gain chip; an optical waveguide; a plane metal grating and a cover layer. The present application controls the phase difference between the plane metal Bragg grating one and the plane metal Bragg grating two to be lambda / 2, uses interference enhancement and mode suppression mechanism, improves the side mode suppression ratio (SMSR) to 63dB, compresses the line width to 0.6kHz, the plane metal grating adopts high reflectivity Cr / Au structure, the thermal expansion coefficient is low, which ensures the wavelength stability of the device in a wide temperature range, the top cover layer effectively prevents the loss of upward diffraction light energy, optimizes the light field distribution, replaces the traditional semiconductor secondary epitaxial waveguide layer to reduce the cost, does not need grating etching, and the grating accuracy is controllable and the flatness is good.

The application discloses a dynamic terahertz beam deflector of a metal metasurface-liquid crystal-metal grating structure. The device comprises a first dielectric substrate layer, a metal metasurface layer, a liquid crystal layer, a metal grating layer and a second dielectric substrate layer. By composing a tunable photonic resonant cavity with the metal metasurface layer, the liquid crystal layer and the metal grating layer, enhanced in-cavity polarization mode conversion and dynamically controlled terahertz beam deflection can be realized. By changing the frequency of the incident light, the deflection angle of the outgoing light beam is scanned by 37.5-50°. When the frequency of the incident light is 0.69 THz and the deflection angle is 47.5°, a diffraction intensity of 50% and a high-intensity modulation depth of 99.6% are realized. The device has the advantages of flexible design, easy processing, low price, large modulation range and the like, and is conducive to integration and miniaturization. Therefore, the device can be used in terahertz spectrum, imaging, radar and communication systems and the like.

The invention relates to the technical field of semiconductor lasers, in particular to a compact ultra-narrow linewidth external cavity laser based on a top metal reflection grating, which comprises a gain chip, the left end face of the gain chip is plated with a high reflection film, and the right end face of the gain chip is plated with a first antireflection film; the right side of the gain chip is provided with a metal grating waveguide, the right end face of the gain chip is aligned and attached to the left end face of the metal grating waveguide, the left end face of the metal grating waveguide is plated with a second antireflection film, and the right end face of the metal grating waveguide is plated with a third antireflection film; the gain chip comprises a substrate, a ridge optical waveguide is arranged on the upper portion of the substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, and a metal cover Bragg reflection grating is arranged on the upper portion of the ridge optical waveguide. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 750Hz and M2 less than 1.1 is realized.

Described herein are IC devices include vias deposited in a regular array, e.g., a hexagonal array, and processes for depositing vias in a regular array. The process includes depositing a guiding pattern over a metal grating, depositing a diblock copolymer over the guiding pattern, and causing the diblock copolymer to self-assemble such one polymer forms an array of cylinders over metal portions of the metal grating. The polymer layer can be converted into a hard mask layer, with one hard mask material forming the cylinders, and a different hard mask material surrounding the cylinders. A cylinder can be selectively etched, and a via material deposited in the cylindrical hole to form a via.