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Method for preparing metal nano stripes

A metal nano and stripe technology, applied in the field of new materials, to achieve the effect of high efficiency, large-scale industrial production, and easy large-scale industrial production

Active Publication Date: 2011-11-02
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Embodiment 1

[0018] Kaufmann-type wide-beam ion source bombardment system is adopted, the ion beam spot diameter is 50 mm, high-purity Ar (99.999%) is used as the working gas, and the background vacuum is 2×10 -4 Pa, the working pressure is 2×10 -2 Pa. The substrate material is an EPI-polished N-type single crystal Si(100) substrate, the resistance of which is 0.01Ω·cm-0.02Ω·cm, and the surface roughness is 0.2nm. The substrate Si (100) substrate was ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 15 minutes in advance to remove organic and inorganic impurities. Use a high-purity Fe (99.995%) block with a flat surface and a rectangular structure as the metal target, set the horizontal angle between the target surface and the substrate workbench to be 80°, and the bottom position of the target and the substrate Si (100) substrate The vertical height is 1mm. The working table temperature is normal temperature 25°C, and the horizontal movement speed is 0.05cm...

Embodiment 2

[0020] Kaufmann-type wide-beam ion source bombardment system is adopted, the ion beam spot diameter is 50 mm, high-purity Ar (99.999%) is used as the working gas, and the background vacuum is 2×10 -4 Pa, the working pressure is 2×10 -2Pa. The substrate material is an EPI-polished P-type single crystal Si(111) substrate, the resistance of which is 5.6Ω·cm-10.4Ω·cm, and the surface roughness is 0.2nm. The substrate Si(111) substrate was ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 15 minutes in advance to remove organic and inorganic impurities. A high-purity Co (99.995%) block with a flat surface and a rectangular structure is used as a metal target, and the horizontal angle between the target surface and the substrate workbench is set at 55°, and the bottom position of the target and the substrate Si (111) substrate The vertical height is 1mm. The temperature of the workbench is maintained at 700°C, and the horizontal movement speed is 0.02...

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Abstract

The invention discloses a method for preparing metal nano stripes. The method comprises the following steps that a target material is disposed in a way that a target surface of the target material and a surface of a horizontal substrate form an angle theta; the surface of the horizontal substrate is bombarded vertically by ion beams from an ion beam gun in at least one inert gas as working gas; the target material is bombarded by ion beams from ion beam gun in a way that the ion beams and the normal of the target surface of the target material form an angle theta; the substrate is bombarded by ion beams reflected by the target surface in a way that the reflected ion beams and the normal of the substrate form an angle of 180 degree to 2-theta and simultaneously, the substrate moves horizontally; and when the previous step is finished, metal nano stripes are obtained, wherein the target material has a rectangular structure and surfaces of the target material are smooth. The method for preparing self-assembled metal micro-nano stripes has the advantages of low cost, good controllability and feasibility of industrialization, and can be utilized for the fields of productions of metal grating polarizers, nonlinear optical devices, plasma photonic chips, LED luminous efficiency reinforced metal gratings and micro-nano magnetic structures.

Description

technical field [0001] The invention belongs to the field of new materials and relates to a method for preparing metal nano stripes. Background technique [0002] Ion beam bombardment-induced self-assembly of nanostructures on material surfaces has aroused great scientific and industrial interest in recent years. Since 1999, Facsko et al reported in "Science" that ion beams were used to bombard GaSb crystals to obtain self-assembled nano-lattices. People have successively used ion beam bombardment to self-assemble ordered nano-lattice or nano-stripes on Si, Ge semiconductor, glass, and metal bulk materials. For example, the invention patent CN 101748374A discloses a method of growing high-density fine self-organized Ge quantum dots by using ion beam sputtering technology. The current reports are all nanostructures prepared by ion beam bombardment on homogeneous single crystal, polycrystalline or amorphous bulk. On heterogeneous substrates, the use of ion beam direct bomba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F4/00
Inventor 潘峰唐光盛曾飞
Owner TSINGHUA UNIV
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