The invention discloses a SiC micro-nano chute
grating and a method for
processing the SiC micro-nano chute
grating based on
ion implantation induction and
electric spark, and the method comprises the following steps: S1,
processing by adopting a
silicon carbide substrate, then depositing a Cr / SiO2 composite
mask layer on the substrate, exposing, developing and
etching to form a Cr / SiO2 composite
mask structure with a periodic
grid pattern; s2, introducing ions into the exposed SiC region as an n-type
dopant by adopting a large-angle inclined
ion implantation method to form a conductive modified region, and obtaining a locally modified
silicon carbide substrate; and S3, adopting
electric spark machining to stably form a single-pulse-scale directional
corrosion pit in the target
ion implantation region, and realizing linear scanning
etching along the grid bar direction to obtain the SiC micro-nano chute
grating with the nano-scale groove structure. According to the method, the problems of low
processing efficiency, poor processing surface quality, poor
morphology control and the like of the
SiC substrate grating are solved, and directional induction
etching with a specified side wall inclination angle is realized.