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200 results about "Periodic grating" patented technology

Method and apparatus for the determination of mask rules using scatterometry

A method and apparatus for determining optical mask corrections for photolithography. A plurality of grating patterns is printed onto a wafer utilizing a photomask having at least one grating. Each grating pattern within the plurality of grating patterns is associated with known photolithographic settings. Each grating pattern is illuminated independently with a light source, so that light is diffracted off each grating pattern. The diffracted light is measured utilizing scatterometry techniques to determine measured diffracted values. The measured diffracted values are compared to values in a library to determine a profile match. A 2-dimensional profile description is assigned to each grating pattern based on the profile match. A database is compiled of the profile descriptions for the plurality of grating patterns. Photomask design rules are then generated by accessing the database containing the 2-dimensional profile descriptions. In preferred embodiments, the design rules are used to create and correct masks containing OPC corrections, phase-shifting mask corrections and binary masks. In a preferred embodiment the at least one grating is a bi-periodic grating. In a preferred embodiment, the scatterometry technique is optical digital profilometry utilizing a reflectometer or ellipsometer.
Owner:TOKYO ELECTRON US HOLDINGS INC

Method and apparatus for the determination of mask rules using scatterometry

A method and apparatus for determining optical mask corrections for photolithography. A plurality of grating patterns is printed onto a wafer utilizing a photomask having at least one grating. Each grating pattern within the plurality of grating patterns is associated with known photolithographic settings. Each grating pattern is illuminated independently with a light source, so that light is diffracted off each grating pattern. The diffracted light is measured utilizing scatterometry techniques to determine measured diffracted values. The measured diffracted values are compared to values in a library to determine a profile match. A 2-dimensional profile description is assigned to each grating pattern based on the profile match. A database is compiled of the profile descriptions for the plurality of grating patterns. Photomask design rules are then generated by accessing the database containing the 2-dimensional profile descriptions. In preferred embodiments, the design rules are used to create and correct masks containing OPC corrections, phase-shifting mask corrections and binary masks. In a preferred embodiment the at least one grating is a bi-periodic grating. In a preferred embodiment, the scatterometry technique is optical digital profilometry utilizing a reflectometer or ellipsometer.
Owner:TOKYO ELECTRON US HOLDINGS INC

Spectral synchronous phase-shift common-path interference microscopic-detection device and detection method

The invention discloses a spectral synchronous phase-shift common-path interference microscopic-detection device and a detection method, which belongs to the field of optical interference detection. The invention is designed for solving the problem that the existing optical phase-shift interference detection method is complicated and difficult in operation and low in measurement accuracy. The scheme of the invention is as follows: a beam emitted by a light source, after passing through a polaroid, enters into a light receiving surface of a beam collimating and expanding system, after the beam is subjected to beam collimating and expanding by the beam collimating and expanding system, an emergent beam enters into a first beam splitter prism, and then a reflected beam of the first beam splitter prism, as a reference beam, enters into a rectangular window after passing through a second lambda/4 wave plate; the reference beam and object beams which are abreast converged into the rectangular window respectively pass through a first Fourier lens, a one-dimensional periodic grating, a second Fourier lens, a non-polarizing beam splitter prism and a four-quadrant polaroid set again, a polarized beam emitted from the four-quadrant polaroid set generates an interference pattern on a plane of an image sensor, and a computer carries out processing on the acquired interference pattern so as to obtain the phase distribution of an object to be detected.
Owner:HARBIN ENG UNIV

Optical position measuring arrangement

An optical position measuring arrangement for the generation of n>1 phase-shifted incremental signals characterizing relative positions of two objects which are movable with respect to each other along a measuring direction. The optical position measuring arrangement includes a light source that emits bundles of beams, a measurement grating, a plurality of optional gratings and a scanning unit. The scanning unit includes a scanning grating arranged in a scanning plane, wherein the scanning grating includes a plurality of blocks arranged periodically along the measuring direction with a scanning grating periodicity TPAG equaling a fringe pattern periodicity TPS, and each block includes n grating sections (n=1, 2, 3, . . . ) of a width bx=TPAG/n, exclusively arranged along the measuring direction, and each of the n grating sections has a periodic grating structure, which causes a deflection of the bundles of beams propagated through each of the n grating sections in several spatial directions, in which resulting spatial directions of the n grating sections in a block differ. The scanning unit further includes a plurality of detector elements arranged downstream of the scanning grating, wherein the detector elements are arranged in the spatial directions in the detector plane, and wherein the detector plane is located in an area in which the bundles of beams coming from the scanning grating are completely spatially separated. The fringe pattern having a periodicity TPS is formed in the scanning plane by an interaction of the bundles of beams emitted by the light source with the measurement grating and the further optional gratings.
Owner:DR JOHANNES HEIDENHAIN GMBH

Fabrication method for integrated semiconductor laser

InactiveCN105098595AStable working modeAvoid oscillatory feedbackOptical wave guidanceLaser detailsIsosceles trapezoidRidge waveguides
The invention discloses an integrated semiconductor laser of a 2-micrometer single-mode high-power GaSb-based metal grating master oscillator power amplifier and a fabrication method of the integrated semiconductor laser. The semiconductor laser comprises a substrate, an epitaxial structure, a gain amplification region, a master oscillator region, a metal grating region and light limitation grooves, wherein the epitaxial structure is grown on the substrate and comprises an N-type lower contact layer, an N-type lower limitation layer, a lower waveguide layer, an active region, an upper waveguide layer, a P-type upper limitation layer and a P-type upper contact layer from bottom to top, the gain amplification region is arranged at the front part, namely an emergent light part of the semiconductor laser and is of an isosceles trapezoid structure formed by downwards etching the P-type upper contact layer, the master oscillator region is arranged at the rear part of the gain amplification region and is of a ridged waveguide structure formed by downwards etching the P-type upper contact layer and the P-type upper limitation layer, the metal grating region is arranged at the rear part of the master oscillator region and is of a periodic grating structure formed on the surface of the upper waveguide layer, the light limitation grooves are symmetrically arranged at the two sides of ridged waveguide structure, and the light limitation grooves and the ridged waveguide structure are arranged in an inclining manner.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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