The invention discloses an integrated semiconductor laser of a 2-micrometer single-mode high-power GaSb-based metal grating master oscillator power amplifier and a fabrication method of the integrated semiconductor laser. The semiconductor laser comprises a substrate, an epitaxial structure, a gain amplification region, a master oscillator region, a metal grating region and light limitation grooves, wherein the epitaxial structure is grown on the substrate and comprises an N-type lower contact layer, an N-type lower limitation layer, a lower waveguide layer, an active region, an upper waveguide layer, a P-type upper limitation layer and a P-type upper contact layer from bottom to top, the gain amplification region is arranged at the front part, namely an emergent light part of the semiconductor laser and is of an isosceles trapezoid structure formed by downwards etching the P-type upper contact layer, the master oscillator region is arranged at the rear part of the gain amplification region and is of a ridged waveguide structure formed by downwards etching the P-type upper contact layer and the P-type upper limitation layer, the metal grating region is arranged at the rear part of the master oscillator region and is of a periodic grating structure formed on the surface of the upper waveguide layer, the light limitation grooves are symmetrically arranged at the two sides of ridged waveguide structure, and the light limitation grooves and the ridged waveguide structure are arranged in an inclining manner.