5results about How to "Increase modulation bandwidth" patented technology

The application relates to the technical field of photoelectric devices, in particular to an RC-Micro LED device and a preparation method thereof, which comprises, from bottom to top, a second substrate, a metal conductive support layer, a metal electrode layer, a first mirror layer, a transparent conductive layer, a gallium nitride epitaxial layer and a second mirror layer; the gallium nitride epitaxial layer is in a convex mesa structure, an insulating layer is covered on the sidewall of the convex mesa structure; the first mirror layer and the second mirror layer are oppositely arranged to form a Fabry-Perot resonant cavity structure. The RC-Micro LED device can meet the transmission requirement of high-speed short-distance optical interconnection.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The application discloses a quantum secure networking device and method based on center-pumped frequency comb distribution, relates to the technical field of quantum information, and simultaneously distributes pump laser to each user node through a center-pumped laser distribution unit, so that each user node can independently generate an electro-optical frequency comb; the electro-optical frequency comb generation unit is combined with a thin-film lithium niobate cascade modulator and a capacitively loaded slow-wave electrode structure, so that the half-wave voltage is effectively reduced and the modulation bandwidth is improved; polarization control and photon detection of the encoded comb teeth are performed through two-photon interference and a quantum key distribution unit, and quantum key distribution is realized based on the two-photon interference effect. The above functional modules work in sequence and in cooperation, so that pump light distribution, electro-optical comb generation, filtering and encoding, polarization control and two-photon interference detection form a complete closed loop, high security and high efficiency of quantum key distribution in a multi-user full-connection scene are realized, and the practical application requirements of large-scale quantum secure networking are met.

The laser chip fabrication method and laser chip disclosed herein include a light-emitting region and an electro-absorption modulation region. The P-InP layer includes a first region, a second region, and a third region, with a second active region located below the third region. The first and second regions are exposed to the implanted ion beam, forming a first and a second electrically isolated region. The third region, protected by a mask, remains conductive, forming a first P-InP body layer. During ion implantation, the first and second metal layers act as masks for the first P-InP body layer, intercepting ion implantation and preventing ions from penetrating deep into the first P-InP body layer, thus maintaining its conductivity. The narrow linewidths of the first and second metal layers reduce the ion implantation width of the first P-InP body layer, resulting in a narrower linewidth first P-InP body layer, which is beneficial for improving the modulation rate and modulation bandwidth of the electro-absorption modulation region.

The invention discloses an electro-optical modulator and a preparation method thereof. The electro-optical modulator comprises an electro-optical material film wafer; the covering belt is arranged on the upper surface of the electro-optical material film wafer and is used for restraining a transverse electric mode; the traveling wave electrodes are arranged on the upper surface of the electro-optical material film wafer and located on the two sides of the covering belt. According to the invention, the preparation of the high-performance electro-optical modulator on the non-etching electro-optical material film is realized.