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Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity

A coupling cavity and semiconductor technology, applied in single-mode high-speed modulation Fabry-Perot semiconductor laser, single-mode output and high-speed modulation, can solve the problem that Fabry-Perot laser is difficult to apply, unfavorable for large-scale integration, Increase system complexity and other issues to achieve the effects of low cost, reduced restriction, and easy integration

Active Publication Date: 2015-08-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, in large-capacity and high-speed modulation information transmission networks, Fabry-Perot lasers are difficult to be applied due to their own mode problems. The problems are mainly manifested in the coexistence of multiple longitudinal modes and the wide spectral linewidth.
[0003] The traditional method to solve the multi-longitudinal mode problem of semiconductor lasers is mainly by introducing a distributed feedback grating in the cavity or using an external cavity feedback mode selection method. Large optical loss, and increases the complexity of the system, which is not conducive to large-scale integration

Method used

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  • Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity
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  • Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity

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Embodiment Construction

[0029] see figure 1 As shown, the present invention provides a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity, including:

[0030] A die, the die is a laminated structure, comprising:

[0031] One electrode 101;

[0032] The lower contact layer 102, which is made on the lower electrode 101, is a heavily doped N-type III-V group material;

[0033] An N-type substrate 103, which is fabricated on the lower contact layer 102;

[0034] On the N-type substrate 103, it is divided into two parts, one is the Fabry-Perot type microcavity 201, and the other is the whispering gallery type microcavity 202, and the Fabry-Perot type microcavity 201 is made on N On the type substrate 103, one end thereof is flush with one end of the N type substrate 103, and the whispering gallery type microcavity 202 is made on the N type substrate 103, and is positioned at the other end of the Fabry-Perot type microcavity 201;

[0035] The laminated structure...

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Abstract

The invention discloses a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity, and the laser comprises a tube core which is in a stacked structure and comprises a lower electrode; a lower contact layer which is disposed on the lower electrode; and an N-type substrate which is disposed on the lower contact layer. The N-type substrate is divided into two parts: a Fabry-Perot type miniature cavity and an echo-wall type miniature cavity. The Fabry-Perot type miniature cavity is disposed on the N-type substrate, wherein one end of the Fabry-Perot type miniature cavity is aligned with one end of the N-type substrate. The echo-wall type miniature cavity is disposed on the N-type substrate, and is located at the other end of the Fabry-Perot type miniature cavity. The Fabry-Perot type miniature cavity and the echo-wall type miniature cavity have the same stacked structure. According to the invention, the high-power Fabry-Perot type miniature cavity and the single-mode high-speed modulation echo-wall type miniature cavity are combined together, and the mode coupling between the two cavities is adjusted so as to adjust the equivalent reflectivity of the Fabry-Perot type miniature cavity, thereby achieving high-power, single-mode lasing and better high-speed modulation characteristics.

Description

technical field [0001] The present invention relates to the field of semiconductor lasers, in particular to a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity. Fabricate a whispering gallery microcavity to realize single-mode output and high-speed modulation of Fabry-Perot laser. Background technique [0002] Semiconductor lasers have the advantages of high electro-optical conversion efficiency, small size, long life, low cost, easy monolithic integration, and direct current modulation. They are one of the core devices for ultra-high-speed, large-capacity optical communications and large-scale photonic integrated circuits. Among them, the Fabry-Perot laser is a relatively traditional semiconductor laser, which has a simple structure and manufacturing process, high output power, and low cost, and has been widely used in optical fiber communication networks with low transmission rates. However, in large-capacity and high-speed modula...

Claims

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Application Information

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IPC IPC(8): H01S5/10H01S5/14H01S5/06
Inventor 马秀雯杨跃德肖金龙刘博文邹灵秀龙衡黄永箴
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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