Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity

A coupling cavity and semiconductor technology, applied in single-mode high-speed modulation Fabry-Perot semiconductor laser, single-mode output and high-speed modulation, can solve the problem that Fabry-Perot laser is difficult to apply, unfavorable for large-scale integration, Increase system complexity and other issues to achieve the effects of low cost, reduced restriction, and easy integration

Active Publication Date: 2015-08-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in large-capacity and high-speed modulation information transmission networks, Fabry-Perot lasers are difficult to be applied due to their own mode problems. The problems are mainly manifested in the coexistence of multiple longitudinal modes and the wide spectral linewidth.
[0003] The traditional method

Method used

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  • Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity
  • Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity
  • Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity

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Embodiment Construction

[0029] see figure 1 As shown, the present invention provides a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity, including:

[0030] A die, the die is a laminated structure, comprising:

[0031] One electrode 101;

[0032] The lower contact layer 102, which is made on the lower electrode 101, is a heavily doped N-type III-V group material;

[0033] An N-type substrate 103, which is fabricated on the lower contact layer 102;

[0034] On the N-type substrate 103, it is divided into two parts, one is the Fabry-Perot type microcavity 201, and the other is the whispering gallery type microcavity 202, and the Fabry-Perot type microcavity 201 is made on N On the type substrate 103, one end thereof is flush with one end of the N type substrate 103, and the whispering gallery type microcavity 202 is made on the N type substrate 103, and is positioned at the other end of the Fabry-Perot type microcavity 201;

[0035] The laminated structure...

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Abstract

The invention discloses a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity, and the laser comprises a tube core which is in a stacked structure and comprises a lower electrode; a lower contact layer which is disposed on the lower electrode; and an N-type substrate which is disposed on the lower contact layer. The N-type substrate is divided into two parts: a Fabry-Perot type miniature cavity and an echo-wall type miniature cavity. The Fabry-Perot type miniature cavity is disposed on the N-type substrate, wherein one end of the Fabry-Perot type miniature cavity is aligned with one end of the N-type substrate. The echo-wall type miniature cavity is disposed on the N-type substrate, and is located at the other end of the Fabry-Perot type miniature cavity. The Fabry-Perot type miniature cavity and the echo-wall type miniature cavity have the same stacked structure. According to the invention, the high-power Fabry-Perot type miniature cavity and the single-mode high-speed modulation echo-wall type miniature cavity are combined together, and the mode coupling between the two cavities is adjusted so as to adjust the equivalent reflectivity of the Fabry-Perot type miniature cavity, thereby achieving high-power, single-mode lasing and better high-speed modulation characteristics.

Description

technical field [0001] The present invention relates to the field of semiconductor lasers, in particular to a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity. Fabricate a whispering gallery microcavity to realize single-mode output and high-speed modulation of Fabry-Perot laser. Background technique [0002] Semiconductor lasers have the advantages of high electro-optical conversion efficiency, small size, long life, low cost, easy monolithic integration, and direct current modulation. They are one of the core devices for ultra-high-speed, large-capacity optical communications and large-scale photonic integrated circuits. Among them, the Fabry-Perot laser is a relatively traditional semiconductor laser, which has a simple structure and manufacturing process, high output power, and low cost, and has been widely used in optical fiber communication networks with low transmission rates. However, in large-capacity and high-speed modula...

Claims

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Application Information

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IPC IPC(8): H01S5/10H01S5/14H01S5/06
Inventor 马秀雯杨跃德肖金龙刘博文邹灵秀龙衡黄永箴
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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