According to the electro-
optical modulator with the low driving
voltage and the preparation method of the electro-
optical modulator, the modulation
electrode is prepared by adopting the
superconducting material instead of conventional
metal, so that the ohmic loss of the modulation
electrode can be eliminated in a low-temperature
working environment, a
microwave modulation
signal can be transmitted with extremely low loss, the bandwidth of the electro-
optical modulator is remarkably improved, and the performance of the electro-optical modulator is improved. Due to the characteristic of extremely
low transmission loss of the superconducting modulation
electrode, the interaction between the electrode and a
light field is enhanced by adopting a longer electrode design on the premise of not introducing obvious
signal attenuation, so that the half-wave
voltage can be effectively reduced while the ultra-high
modulation bandwidth of the electro-optical modulator can be maintained, and the performance of the electro-optical modulator is improved. Therefore, a millivolt-level weak
electric signal can be efficiently responded, and a cross-temperature zone
interconnection system with higher energy efficiency can be constructed; besides, by means of the formed high-quality electro-
optical thin film layer,
waveguide transmission loss is greatly reduced, photorefractive damage is avoided under high
optical power, the reliability of the whole optical
interconnection core device is remarkably improved, and the service life of the whole optical
interconnection core device is remarkably prolonged.