The invention provides a stack type image sensor. The stack type image sensor is formed by an upper silicon chip and a lower silicon chip via the stack technology, wherein the upper silicon chip is a photosensitive sensor array, the lower silicon chip is a readout circuit and output interface, the upper silicon chip and the lower silicon chip are connected via a binding wire, the lower silicon chip of the stack type image sensor is the readout circuit and output interface, and a readout circuit and output interface of the whole stack type image sensor comprises a digital-to-analog converter, analog-to-digital converters, an amplifier, a row/column controller, a digital algorithm, a high-speed data interface, and a band-gap reference included in the lower silicon chip. By employing the stack type image sensor, the high-readout circuit and the high-speed output circuit are transferred to the lower silicon chip of the stack type sensor so that the area of a non-pixel array area in the upper silicon chip is effectively reduced, the photosensitive filling rate of the single silicon chip can be increased, low noise and low power consumption of sensor chips are realized, and the filling factor of a photosensitive sensor pixel array is greatly increased.