67results about How to "Reduce conductive resistance" patented technology

An ESD protection circuit includes a detection circuit for detecting an ESD current and a bypass circuit for bypassing the ESD. The detection circuit and bypass circuit are connected to a first pad and a second pad. The bypass circuit is connected to an output terminal of the detection circuit. The bypass circuit comprises a MOS transistor, a first bipolar transistor and a second bipolar transistor. The drain of the MOS transistor, the collectors of the first bipolar transistor and the collector of the second bipolar transistor are connected to the first pad. The source and the substrate of the MOS transistor and the emitter of the second bipolar transistor are connected to the second pad. The base of the first bipolar transistor is connected to the gate of the MOS transistor and the emitter of the first bipolar transistor is connected to the base of the second bipolar transistor.

The invention relates to a touch panel suitable to be arranged on a display panel, which comprises a substrate, a plurality of first sensing series, a plurality of second sensing series and a plurality of auxiliary line segments. The first and second sensing series comprise a plurality of sensing pads, a plurality of first connecting lines and a plurality of second connecting lines. The pluralityof first connecting lines are parallel with a first direction and are connected in series with a part of sensing pads to form the plurality of first sensing series. The plurality of second connectinglines are parallel with a second direction and are connected in series with other sensing pads to form the plurality of second sensing series. The first sensing pads and the second sensing pads are coplanar, and the first connecting lines are electrically isolated from the second connecting lines. The plurality of auxiliary line segments are positioned in the outline range of the plurality of sensing pads and are directly contacted with the sensing pads.

The invention discloses a preparation method of a membrane electrode of a fuel cell. The method comprises the steps of coating a transfer medium with a substrate layer; carrying out in-situ reduction-deposition of platinum nanoparticles on the substrate layer and then coating the platinum nanoparticles with a layer of proton conducting polymer to form an electrode catalyst layer; and finally transferring the catalyst layer to a proton exchange membrane by adopting a heat transfer process to prepare a membrane electrode. The invention further discloses the membrane electrode of the fuel cell and an application of the membrane electrode on a cathode or an anode of a proton exchange membrane fuel cell. The problem of contradiction between reduction time and electrochemical active area in thein-situ deposition process of platinum is relatively well solved and the yield of heat transfer is improved. The membrane electrode has the beneficial effects of high catalyst activity and utilizationrate, large electrochemical active area, low gas transmission impedance in the catalyst layer and the like, and is low in production cost, simple and fast in process and high in yield, and massive production is easy to implement.

The invention relates to a method for manufacturing semiconductor device, comprising the steps of: forming a primary protection layer on a disc surface; depositing a metal seed layer on the primary protection layer; forming a re-distributed wire on the metal seed layer and forming a metal connecting column on the surface of the re-distributed wire; welding a metal welded ball on the metal connecting column; and forming a secondary protection layer on the disc surface with the metal connecting column and the re-distributed wire, wherein the metal welded ball is partly exposed out of the secondary protection layer. The method related by the invention strengthens the connecting strength of the metal welded ball and the metal layer under the ball, and reduces the conductive resistance of the metal welded ball and the metal layer under the ball.

The invention discloses a back passivation matrix dot type laser grooving conductive structure. The structure comprises a silicon wafer substrate, wherein the back face of the silicon wafer substrateis provided with lamination back passivation film, and back electrode main gate regions are arranged at intervals on the lamination back passivation film; laser grooving is carried out on non-back electrode main gate regions on the lamination back passivation film through a lamination back passivation film in a wave band of 500-1200 nanometers to from a repeating dot group structure unit, whereinthe repeating point group structure unit is composed of 2-18 circular-aperture-shaped laser spots overlapping 3%-17% of a circular area region, and the intervals of center points of the repeating point group structure unit are 0.2-1.0 millimeters. The laser grooving conductive structure has the advantage that a back conduction plane can be divided into smaller conductive structure units, so that the photo-generated current conduction path is shortened, the transmission collecting capacity of current carriers is improved, lattice damage and composite damage of the battery silicon wafer substrate caused by the laser grooving can be reduced, and the photovoltaic conversion efficiency and assembly reliability of single polycrystalline silicon back passivation local back contact solar cell areimproved.

The invention provides a carbon nanotube enameled wire and application thereof. The carbon nanotube enameled wire comprises a carbon nanotube core and an insulating layer coating the outer surface ofthe carbon nanotube core, wherein the carbon nanotube core is a carbon nanotube fiber bundle formed by a plurality of carbon nanotube fibers. Based on the good flexibility of the carbon nanotube fiberitself and an insulating material being a flexible coating, thousands of degrees of high temperature can be withstood, flexibility, bending and winding can still be achieved after the material coatsthe fiber surface and is cured, and the prepared carbon nanotube enameled wire is ensured to have strong flexibility and is not broken by high temperature or impact. The surface of the carbon nanotubeis coated with the insulating material to enable the fiber surface of the carbon nanotube to be insulated, thereby avoiding short circuit caused by winding. Besides, the contact between the carbon nanotube fiber and the oxygen can be greatly reduced, the carbon nanotube fiber is not melted at a high temperature when large current is conducted to the conductor, and the material use safety performance is improved.

The invention provides a manufacturing method for a high-conduction transparent glass-based circuit board. The manufacturing method comprises the steps of printing conductive paste; then performing sintering, fusing and secondary coating to form a glass plate with a circuit layer; and finally welding elements through a reflow welding technology. According to the manufacturing method for the high-conduction transparent glass-based circuit board provided by the invention, the manufacturing of the high-conduction transparent glass-based circuit board can be realized; the light transmittance of the manufactured high-conduction transparent glass-based circuit board is greater than 90%; meanwhile, the manufactured high-conduction transparent glass-based circuit board has the superconducting capability, and the conducting impedance is lower than 5*10<-8>omega; the manufactured high-conduction transparent glass-based circuit has no medium bonding, so that the circuit layer has high heat conducting capability in high-power applications; and in addition, the circuit layer and the glass plate molecules are tightly fused, so that electronic element patching through an SMD can be realized, and the elements do not fall off easily.

The invention discloses a thin film transistor, a manufacturing method of the thin film transistor and a display substrate and belongs to the technical field of display. The thin film transistor comprises a grid electrode and a grid insulation layer which are sequentially stacked on the lining substrate. A source and drain electrode is arranged on the side, away from the lining substrate, of the grid insulation layer and comprises a source electrode and a drain electrode. An active layer is arranged on the side, away from the lining substrate, of the source and drain electrode and is connected with the source electrode and the drain electrode. According to the thin film transistor, the manufacturing method of the thin film transistor and the display substrate, contact of the active layer and etching liquid is avoided in the source and drain electrode forming process, damage of conductive channels in the active layer can be avoided in the process, and influences on the driving performance of the TFT is avoided. The thin film transistor, the manufacturing method of the thin film transistor and the display substrate are used for displaying images.

The invention discloses a circuit board glass substrate manufactured from alkali-free glass fiber waste silk and a preparation method thereof, and belongs to the technical field of circuit board materials. According to the circuit board glass substrate manufactured from alkali-free glass fiber waste silk, the alkali-free glass fiber waste silk is adopted as a raw material for manufacturing the circuit board glass substrate, the obtained glass substrate and a conducting circuit are in the fusion relation, the relation is compact, the super-conductivity is achieved, and the conductive resistance is lower than 5*10<-8> omega; the glass substrate and the conductive circuit are in dielectric-free combination, the circuit layer has the good heat conductivity during high-power application, the circuit layer and the glass substrate are in molecular tight fusion, and peeling is likely to be achieved; high light transmittance can be ensured, and the light transmittance exceeds 95%; the surface of the glass substrate is flushed with the upper surface of the conducting circuit, the surface of the while glass substrate circuit board is smooth, and the conducting circuit is not likely to be damaged.

The invention discloses a conductive connection structure for cylindrical power battery modules. The conductive connection structure comprises nickel sheets, holders, cells, battery modules and an elastic sheet type convergence plate. The conductive connection structure is characterized by that the conductive connection structure of front holders and front nickel sheets, and the elastic sheet type convergence plate, rear nickel sheets and rear holders is employed between adjacent battery modules. Compressing structures are employed among front nickel sheets, the elastic sheet type convergence plate and the rear nickel sheets. The adjacent battery modules are in compressing connection through locking elements. According to the conductive connection structure, a traditional convergence plate structure is changed; moreover, a conductive connection mode between the cell modules is improved, the conductive distance is optimized; through compressing connection of the battery modules and the elastic sheet type convergence plate, potential safety hazards resulting from screw fall-off are reduced; compared with the screw fastening convergence plate, the elastic sheet type convergence plate has the advantage that the weight is reduced; most importantly, through adoption of the elastic sheet type convergence plate, the current transmission distance between the two battery modules is the shortest; the resistance is reduced; and direct connection between an anode and a cathode is achieved.

The invention discloses a probe and a connector suitable for a large-current high-speed signal testing. The probe comprises a first contact part, a first elastic part, a connecting part, a second elastic part and a second contact part, the first elastic part comprises a first linear part, a first bent part and a second linear part; the first linear part extends in the direction perpendicular to the axial direction, and one end of the first linear part is connected with the other end of the first contact part; the second linear part extends in the direction perpendicular to the axial direction,and one end of the second linear part is connected with the connecting part; the first bending part is of a C-like structure, one end of the first bending part is connected with the first linear part, and the other end is connected with the second linear part; the distance between the first linear part and the second linear part is smaller than the maximum inner diameter of the first bent part inthe axial direction; the connecting part is used for connecting the second linear part and the second elastic part; according to the probe provided by the invention, the elastic force of the elasticpart can be reduced while the cross sectional area is increased, and the probe and a contact object thereof are prevented from being damaged due to overlarge elastic force/clamping force.

The invention discloses a fuel battery shell which comprises a first storage box for electrolyte heat exchange, an electrochemical reaction cavity for electrolyte reaction, a mixture accommodating cavity for accommodating reactants and electrolyte, a filtering device for filtering the reactants and a second storage box for accommodating reacted and filtered electrolyte, wherein the first storage box, the electrochemical reaction cavity, the mixture accommodating cavity, the filtering device and the second storage box are arranged in sequence from top to bottom; the first storage box is communicated with the electrochemical reaction cavity through a first communicating part; the electrochemical reaction cavity is communicated with the mixture accommodating cavity through a second communicating part; the mixture accommodating cavity is communicated with the second storage box through the filtering device. The invention further discloses a fuel battery device with stable output power, which adopts the fuel battery shell. By a simple structure, the fuel battery shell can automatically discharge the reactants, so that the phenomenon that the output power is unstable due to the continuous influence of the reactants on the electrolyte is avoided.

Disclosed are an LDMOS transistor and a forming method thereof. The LDMOS transistor comprises a transistor body region and a shifting region which are located on a semiconductor substrate, a gate region, a source region located in the transistor body region, a leakage region located in the shifting region, a first isolation structure and a control electrode; a clearance is formed between the transistor body region and the shifting region; the gate region spans above the transistor body region and the shifting region; the source region and the leakage region are located on two sides of the gate region; the first isolation structure is located in the shifting region and between the gate region and the leakage region; the control electrode is located on the first isolation structure, and the bottom of the control electrode is located in the first isolation structure. The LDMOS transistor has the advantages that the size increase is avoided, the breakdown voltage is increased, and the conduction resistance is decreased.

The invention discloses a probe and a connector suitable for a large-current high-speed signal testing. The probe comprises a first contact part with a first contact part, an elastic part, a connecting part and a second contact part, the elastic part comprises a first linear part, a bent part and a second linear part; the first linear part extends in the axial direction and one end of the first linear part is connected to the other end of the first contact part and the other end connected to the second linear part through the bent part, the second linear part extends in a direction intersecting the axial direction; in an unstressed state, the central angle corresponding to the bent part is larger than 0 degree and smaller than 90 degrees; the connecting part is used for connecting the second linear part and the second contact part; the second contact part is arranged at one end part of the connecting part and is provided with at least one second contact part; according to the probe provided by the invention, a signal transmission path is shortened on the premise of providing elastic force, and the probe can be applied to high-speed signal transmission and large-current test environments.

The invention relates to a single-layer gas diffusion layer for a fuel cell and a preparation method and application of the single-layer gas diffusion layer, the gas diffusion layer only comprises a microporous layer, the microporous layer takes a carbon material, a hydrophobic binder and a pore-forming agent as raw materials, carbon-free paper and a self-supporting microporous layer are prepared through dry-method mold pressing, and the single-layer gas diffusion layer has good hydrophobicity, gas permeability and conductivity, and the resistance of water discharge can be reduced, so that cathode flooding is relieved. The dry-method preparation avoids the defect that cracks are generated on the surface due to solvent volatilization in a wet method, so that water logging caused by water gathering at the cracks is avoided. According to the prepared carbon-free paper, the thickness and porosity of the self-supporting microporous layer are controllable, the preparation process is simple, and conditions are mild. When the carbon-free paper and the self-supporting microporous layer prepared by the method are used as gas diffusion layers of fuel cells, relatively good electrochemical performance is achieved. The novel single-layer gas diffusion layer has wide application value in the field of fuel cells.

The invention discloses an aviation switch. The aviation switch comprises a valve seat (5) and a valve body (1), wherein the valve seat (5) and the valve body (1) are mutually buckled into a whole body to form a contact piece switch casing; the valve seat (5) and the valve body (1) are provided with a fixed contact piece (3) in a clamping way; a torsion bar (7) is movably inserted into the contact piece switch casing, with one end penetrating through the valve seat (5); a moving contact piece (4) is mounted on the torsion bar (7); a plurality of raised contacts (31) are distributed on one surface, opposite to the moving contact piece (4), of the fixed contact piece (3). The aviation switch has the characteristics of being more stable in electrical conduction and low in conduction resistance.