88 results about "Plasmonic waveguide" patented technology

A semiconductor device manufacturing apparatus and a method for use in the manufacturing of such devices minimize the amount of particles which accumulate in the process chamber of the apparatus and clean the interior of the process chamber with a high degree of effectiveness. The semiconductor device manufacturing apparatus has a showerhead located at an upper portion of the process chamber, a plate-like gas diffuser disposed in the showerhead, and both a fluid supply line and a plasma waveguide connected to the showerhead. After a substrate is processed in the process chamber using process gas delivered to the showerhead through the fluid supply line, plasma is supplied into the upper portion of the process chamber from a remote plasma reactor via the plasma waveguide.

Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.

The invention discloses a terahertz isolator device of a magnetic surface plasma waveguide and a control method thereof. The asymmetric and periodic surface plasma waveguide is formed by a metal wall and a semiconductor indium antimonide pillar array. By exerting an external magnetic field under low temperature, the indium antimonide shows the revolving electrical property, and the structure can generate a magnetic surface plasma mode, so that the function of unidirectional isolation transmission of the terahertz wave can be achieved. The unidirectional transmission working frequency range is higher than 1THz, the bandwidth is larger than 80 GHz, the isolation reaches 90dB, the insertion loss is lower than 0.25dB, and tuning on the working frequency range can be performed by controlling the external magnetic field strength. Under the temperature of 186K, the frequency of the external magnetic field can be adjusted to 0.7T from 0.1T, and the central working frequency of a unidirectional transmission frequency band of the device can be tuned to 1THz from 1.42THz. The terahertz isolator is low in loss, high in isolation, tunable in broadband and capable of reducing echo and scattered noises in a terahertz application system and improving transmission quality of the terahertz beam.

The invention discloses a silicon-based nanowire polarization beam splitter based on the mode evolution principle, and can be used for the fields of integrated optics and silicon-based photonics. A vertical hybrid plasma waveguide (3) and a horizontal hybrid plasma waveguide (4) are respectively arranged at the two sides of a tapered transitional waveguide (2), and distance to the tapered transitional waveguide (2) is maintained to be consistent. An input waveguide (1) is connected at the lower end of the tapered transitional waveguide (2). A first S-shaped waveguide (5) is connected at the upper end of the vertical hybrid plasma waveguide (3). A first output waveguide (7) is connected at the upper end of the first S-shaped waveguide (5). A second S-shaped waveguide (6) is connected at the upper end of the horizontal hybrid plasma waveguide (4). A second output waveguide (8) is connected at the upper end of the second S-shaped waveguide (6). The device has advantages of being high in polarization beam splitting efficiency, low in loss, high in manufacturing tolerance and high in work bandwidth, and can also be used for constructing an on-chip polarization diversity scheme so as to realize polarization independent transmission.

The invention relates to the technical field of integrated photoelectronics, in particular to a photoelectric temperature sensor in order to solve the technical problems. Thus, the light source requirement of the photoelectric temperature sensor is lowered, and the cost of a whole temperature sensing system is reduced. The photoelectric temperature sensor is composed of a light source, an optical temperature sensing part and a photoelectric detection part. The optical temperature sensing part is obtained through an asymmetric Mach-Zehnder interferometer. Two arms of the asymmetric Mach-Zehnder interferometer are of an asymmetric geometric structure, the optical phase difference of the two arms is within the range from -2 pi to 2 pi, and the asymmetric geometric structure of the two arms is implemented by selecting different types of waveguides such as a ridged waveguide, a channel waveguide and a strip-shaped waveguide or by selecting the same type of waveguides with different structural parameters. The waveguides of the asymmetric Mach-Zehnder interferometer are non-good conductor material waveguides or surface plasma waveguides combined by non-good conductor material and metal, wherein the non-good conductor material comprises mediums, organic matter and the like.

An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

A high-power low-divergence-angle semiconductor terahertz vertical plane emitting laser comprises a highly-doped receiving substrate, a lower metal waveguide optical confinement layer, a lower contact layer, an active layer, an upper contact layer and an upper metal layer. The lower metal waveguide optical limit layer is formed by metal thermal bonding and located on the receiving substrate. The lower contact layer is located on the lower metal waveguide optical confinement layer. The active layer grows on the lower contact layer. The upper contact layer grows on the active layer and is made into a quasi-periodic geometric progression concentric circle grating structure. The upper metal layer is disposed on the upper contact layer through electron beam evaporation and made into a quasi-periodic geometric progression concentric circle grating structure. The lower metal layer and the lower contact layer form a lower plasma waveguide. The upper metal layer and the upper contact layer form an upper plasma waveguide. The upper plasma waveguide and the lower plasma waveguide form a double-sided metal waveguide structure. The lower contact layer, the active layer, the upper contact layer and the upper metal layer are made into an annular structure, and the annular active layer form an annular resonant cavity.

Disclosed is a plasmon waveguide including cladding (2) consisted of metal, and a dielectric core (3) which is formed of a transparent material, surrounded by or sandwiched by the cladding (2), and has at least one cross-section having a thickness no more than the wavelength of the incident light. The plasmon waveguide is provided with: a incident-side plasmon waveguide (4) into which light (L) is incident; an emission-side plasmon waveguide (5) from which light (L) is emitted; a connection portion (6) connecting the incident-side plasmon waveguide (4) and emission-side plasmon waveguide (5); and a plasmon interference structure (7) which extends from the connection portion (6) in the direction intersecting the incident-side plasmon waveguide (4) or the emission-side plasmon waveguide (5), and has a terminal (7a) at which light (L) is reflected.

An integrated optical fiber gyroscope chip based on surface Plasmon Polariton waveguide is an integrated optical fiber gyroscope chip in which optical signal is transmitted through the surface Plasmon Polariton waveguide and the polymer optical waveguide which are connected with each other, and it is used in the optical fiber gyroscope field. From the input end to the output end, the optical fiber gyroscope chip sequentially has: an input waveguide (1) and the third output waveguide (7), a directional coupler (2), a symmetrical triple waveguide splitter (3), the first output waveguide (61) and the second output waveguide (62), wherein the input waveguide (1), the first output waveguide (61), the second output waveguide (62) and the third output waveguide (7) are polymer optical waveguides, but the directional coupler (2) and the symmetrical triple waveguide splitter (3) are made from the surface Plasmon Polariton waveguide. The chip utilizes the transmission characteristics of the surface Plasmon Polariton waveguide to realize the single polarization of long-distance transmission of the optical signal, and directly modulates the surface Plasmon Polariton waveguide core layer, and removes influence of the leakage light to the precision of the fiber gyroscope through the specific structure.

The invention discloses a silicon-based microring polarization demultiplexer which comprises a silicon substrate and a wrapping layer. The silicon-based microring polarization demultiplexer is characterized by comprising an input waveguide, a transverse electric mode output waveguide, a transverse magnetic mode output waveguide, hybrid plasma waveguides and a microring; the substrate is located at the inner bottom of the wrapping layer, and the hybrid plasma waveguides and the microring are located on the surface of the substrate; each hybrid plasma waveguide comprises a dielectric waveguide, a filling layer and a metal covering layer in sequence from bottom to top; the dielectric waveguides are closely attached to the substrate; the input waveguide is connected with the transverse magnetic mode output waveguide through one hybrid plasma waveguide; the transverse electric mode output waveguide is connected with the other hybrid plasma waveguide, and the microring is located between the two hybrid plasma waveguides. The silicon-based microring polarization demultiplexer has the advantages of being high in polarization demultiplexing efficiency, compact in structure, low in manufacturing difficulty, relatively low in price, capable of being compatible with a wavelength division multiplexing system based on a microring resonator and the like.

Present invention relates to porous silica luminescence device, belonging to optoelectronics technique field. It features utilizing surface plasma wave Purcell effect enhancing porous silica luminescence. It contains forming surface plasmaguide on porous silica layer, porous silica emissive light coupling to surface plasmaguide- guided mode, then scattering to free air. Due to surface plasmaguide- guided mode density of states is very large, porous silica spontaneous radiation is greatly enhanced, therefore luminous efficiency raising greatly, this make the porous silica becoming the important material used in high efficiency silica-based support luminescence device, and capable of being used in photoelectricity integrating and light interconnection.

The invention discloses a Schottky gate array type terahertz modulator and a regulation and control method thereof. A periodic gate type metal-semiconductor surface plasmon waveguide structure is adopted, the characteristics of Schottky contact formed by a metal-semiconductor interface and superposition of the Schottky contact and terahertz surface plasmon polariton position are utilized, a positive electrode and a negative electrode are led in and voltage is exerted, so that the terahertz modulation function of the Schottky gate array type terahertz modulator is achieved. The Schottky gate array type terahertz modulator combines a waveguide optical microstructure with a semiconductor electron device together, so that the Schottky gate array type terahertz modulator is well integrated with other electronic components and systems, and the optical functions of terahertz wave transmission and resonance oscillation are achieved. The Schottky gate array type terahertz modulator works from 2.2THz to 3.2THz, the working frequency can be tuned along with the working voltage, the maximum modulation depth is 16dB, and the highest modulation rate is 22MHz. The Schottky gate array type terahertz modulator is an on-chip electronically-controlled high-speed terahertz modulator which is in a small type and can be integrated, and the application requirements for terahertz broadband wireless communications are met.

An embodiment of the present invention relates to a photon-to-plasmon coupler for converting photons to plasmons or vice versa, said photon-to-plasmon coupler comprising

• • a photonic waveguide for guiding photons,
  • a plasmonic waveguide for guiding plasmons, and
  • two plasmonic strip waveguides,
  • each of said two plasmonic strip waveguides being connected to said plasmonic waveguide and embracing an end section of the photonic waveguide such that each of said plasmonic strip waveguides is optically coupled to the end section of the photonic waveguide.

An optical device having a plasmonic waveguide, in which the plasmonic waveguide has a layered structure of at least three layers that a ferromagnetic metal layer, a first dielectric layer, and a second dielectric layer are layered in this order, in which the first and second dielectric layers are layers that allow light to be transmitted therethrough, and in which a refractive index of the second dielectric layer is higher than a refractive index of the first dielectric layer; and an optical isolator, having the optical device.

An optical sensing system includes a planar optical waveguide having a first surface for detection and a second surface for coupling light. The optical sensing system includes a functional layer integral with the first surface of the planar optical waveguide, and a coupling layer in contact with the second surface of the planar optical waveguide, the coupling layer having a lower refractive index than the planar optical waveguide. The optical sensing system includes an optical source arranged to illuminate at least a portion of the second surface of the planar optical waveguide through the coupling layer with substantially critical optical coupling. The optical sensing system also includes an optical detector arranged to receive a portion of light from the optical source after being reflected from the first surface of the planar optical waveguide and passing through the coupling layer.

The invention relates to a short-range surface plasma waveguide and dielectric waveguide mixed coupling array type structure which is characterized in that the coupling array type structure comprises a dielectric substrate layer and at least two coupling structures located on the dielectric substrate layer, wherein each of the coupling structures comprises a dielectric waveguide layer and a short-range surface plasma waveguide layer; the dielectric waveguide layer is located on the dielectric substrate layer; the short-range surface plasma waveguide layer is located on the dielectric waveguide layer; and the short-range surface plasma waveguide layer of at least one of the coupling structure and the short-range surface plasma waveguide layer of the other coupling structure are different in thickness. The structure can be used for realizing a high-sensitivity detection chip with an ultrathin material refractive index in a big sensing area.

The invention discloses a surface plasma excitation method for chip-integrated metal nanowire, which comprises the following steps: a metal nanowire is arranged on a light emitting surface of a diode chip, and the plasma on an excitation surface is transmitted in the metal nanowires. In the excitation method of the invention, a light source and a plasma waveguide are integrated on the chip directly, thus omitting lens, prismas and other coupling devices in the conventional excitation method of the surface plasma; and linearly polarized light is output by the metal nanowire in the structure, and light intensity output can be adjusted by adjusting direction of the nanowire.

The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.

The invention discloses a wedge-type surface plasma waveguide. The wedge-type surface plasma waveguide comprises a metal substrate and a metal wedge, wherein the metal substrate is made of low-loss metal materials; the metal wedge is arranged on the metal substrate; the cross section of the metal wedge is triangular; a dielectric layer is attached to the sharp end of the metal wedge. The exterior of the dielectric layer is surrounded by a vacuum. The three angles of the triangle of the cross section of the metal wedge are acute angles. The dielectric layer is silicon dioxide or magnesium fluoride. The two side faces and the outer surface, attached to the metal wedge, of the dielectric layer are planes which are thinned gradually from top to bottom. Compared with a single wedge-type surface plasma waveguide under the same conditions, the wedge-type surface plasma waveguide has the advantages that the ratio of the propagation distance of surface plasma wave to the effective mode field area is effectively increased, and the final quality factor is increased by one order of magnitude; the light guide function of the surface plasma waveguide is achieved, the crosstalk between channels is effectively reduced, microminiaturization of a photon circuit is facilitated, and the integration is improved; the waveguide is simple in structure and easy to implement.

The invention discloses a method for preparing a silicon-based surface plasma waveguide having a stepped structure in the technical field of nanometer semiconductors. The method comprises the following steps of: coating electron beam photoresist on a silicon-on-insulator (SOI) chip, and forming a waveguide pattern on a silicon layer through an electron beam exposure system and a reactive ion etching system; depositing high-nonlinearity polymer-regional regularity poly(3-hexylthiophene) on an SOI ridge waveguide; removing the electron beam photoresist and the high-nonlinearity polymer-regional regularity poly(3-hexylthiophene) thereon, and depositing the high-nonlinearity polymer-regional regularity poly(3-hexylthiophene) for the second time by a molecular beam deposition method; and plating metal silver on a polymer film by a radio frequency sputtering method, and preparing the silicon-based surface plasma waveguide having the stepped structure. The product has a nano-scale mode field and low transmission loss, and is combined with high-nonlinearity polymer materials to realize super-high nonlinearity.

A new class of surface plasmon waveguides is presented. The basis of these structures is the presence of surface plasmon modes, supported on the interfaces between the dielectric regions and the flat unpatterned surface of a bulk metallic substrate. The waveguides discussed here are promising to have significant applications in the field of nanophotonics by being able to simultaneously shrink length, time and energy scales, allowing for easy coupling over their entire bandwidth of operation, and exhibiting minimal absorption losses limited only by the intrinsic loss of the metallic substrate. These principles can be used for many frequency regimes (from GHz and lower, all the way to optical).