Manufacturing method of semi-insulating surface plasma waveguide Terahertz quantum cascaded laser device

Abstract

The invention relates to a manufacturing method of a semi-insulating surface plasma waveguide Terahertz quantum cascaded laser device. The manufacturing method at least comprises the steps that: a molecular beam epitaxy grows a lower contact layer, a multiple quantum well active region and an upper contact layer on a semi-insulating GaAs substrate in sequence; an upper electrode metal layer is manufactured on epitaxial materials through photoetching, metalizing and stripping; a photoresist covers the upper electrode metal layer, and the active region is etched to form a ridge structure; the photoresist covers the entire ridge structure, the parts from the uncovered region to the lower contact layer are etched; a lower electrode metal layer is manufactured on both sides of a ridge waveguide through photoetching, metalizing and stripping; and the substrate is thinned, a chip is cleaved and the packaging is completed. The etching of the ridge waveguide is carried out in two steps, the two steps of etching form two downward steps, and the lower electrode metal layer covers the second etched step and second etched side walls to achieve good electrical contact between the lower electrode metal layer and the lower contact layer. The manufacturing method reduces requirements on etching thickness precision and evenness of ridge waveguide manufacturing through adding one step of photoetching process, increases rate of finished products in device processing, and reduces transverse series resistance introduced by the contact layers.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for manufacturing a semi-insulating surface plasmon waveguide terahertz quantum cascade laser. Background technique [0002] As an important terahertz radiation source, terahertz quantum cascade laser has the advantages of small size, easy integration and high conversion efficiency, and is a research hotspot in the terahertz field. The waveguide structure of terahertz quantum cascade laser mainly includes semi-insulating surface plasmon waveguide and double-sided metal waveguide. Among them, the process of semi-insulating surface plasmon waveguide structure is relatively simple, the laser directionality is good, and the coupling output power is high. Therefore, high-power terahertz quantum cascade laser All cascaded lasers use this waveguide structure. [0003] The semi-insulating surface plasmon waveguide process includes sputtering (evaporating) the upper...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for manufacturing a semi-insulating surface plasmon waveguide terahertz quantum cascade laser, which is used to solve the problem of poor contact of the lower electrode in the prior art

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