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Porous silicon light-emitting device

A light-emitting device, porous silicon technology, applied in the field of integrated optoelectronics, can solve the problem of low luminous efficiency of porous silicon materials, and achieve the effects of improving internal quantum efficiency and improving luminous efficiency

Inactive Publication Date: 2007-01-03
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a porous silicon light-emitting device under the action of surface plasmon waves in order to solve the problem of low luminous efficiency of porous silicon materials

Method used

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Examples

Experimental program
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Embodiment 1

[0028] The basic structure of the porous silicon light-emitting device with metal surface plasmon waveguide of the present invention is as follows Figure 5 shown. Select N, resistivity2 h 5 o 2 =3:7, the current density is 4.4mA / cm 2 , forming a porous silicon layer 1 on a silicon substrate 2 . Afterwards, half of the silicon wafer was covered with tin foil, and the other half was sputtered with a magnetron sputtering station to form a 60nm thick gold film. Then remove the tin foil, and use 514nm laser 11 to irradiate respectively on the porous silicon and the gold film after being focused by the lens 10, and the photoluminescence spectra are respectively as follows Image 6 As shown in 13 and 14, it can be seen that the metal surface plasmon waveguide greatly enhances the photoluminescence of porous silicon.

Embodiment 2

[0030] The basic structure of the porous silicon light-emitting device with metal-dielectric surface plasmon waveguide of the present invention is as follows Figure 7 shown. Select N, resistivity2 h 5 o 2 =3:7, the current density is 4.4mA / cmy, and the porous silicon layer 1 is formed on the silicon substrate 2. Then cover half of the silicon wafer with tin foil, and the other half is sputtered on it with a magnetron sputtering table to form a 60nm thick gold and SiO 2 Blend film. Then remove the tin foil, and use 514nm laser light 11 to irradiate respectively on porous silicon and gold and SiO after focusing through lens 10 2 mixed film.

Embodiment 3

[0032] The basic structure of the porous silicon light-emitting device with metal-dielectric surface plasmon waveguide of the present invention is as follows Figure 7 shown. Select N, resistivity2 h 5 o 2 =3:7, the current density is 4.4mA / cm 2 , forming a porous silicon layer 1 on a silicon substrate 2 . Afterwards, half of the silicon wafer was covered with tin foil, and the other half was sputtered on it using a magnetron sputtering station to form a 60nm-thick mixed film of gold and silver. The tin foil was then removed, and the samples were placed in nitric acid to remove the silver and form porous gold. And use the 514nm laser 11 to focus on the porous silicon and the porous gold film respectively after being focused by the lens 10 .

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Abstract

Present invention relates to porous silica luminescence device, belonging to optoelectronics technique field. It features utilizing surface plasma wave Purcell effect enhancing porous silica luminescence. It contains forming surface plasmaguide on porous silica layer, porous silica emissive light coupling to surface plasmaguide- guided mode, then scattering to free air. Due to surface plasmaguide- guided mode density of states is very large, porous silica spontaneous radiation is greatly enhanced, therefore luminous efficiency raising greatly, this make the porous silica becoming the important material used in high efficiency silica-based support luminescence device, and capable of being used in photoelectricity integrating and light interconnection.

Description

technical field [0001] The invention relates to a surface plasmon wave-enhanced porous silicon light-emitting device applied in the fields of optoelectronic integration and light-emitting materials, and belongs to the technical field of integrated optoelectronics. Background technique [0002] Surface plasmon wave [Surface plasmon wave (SPW)] is an electromagnetic field that propagates along the interface between metal and medium, and its amplitude decays exponentially with the distance from the interface in the medium. SPW is a kind of surface wave, which can limit the light wave laterally to the sub-wavelength scale, so it can be used as a nanoscale waveguide; and its dispersion curve is flat near the resonance frequency, the photon density of state is large, and it interacts with the active medium It can enhance spontaneous emission, which will have broad application prospects in active optoelectronic devices, photonic integration and other fields [0003] Bulk silicon i...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 胡小龙黄翊东张巍彭江得
Owner TSINGHUA UNIV
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