50results about How to "Good wavelength selectivity" patented technology

Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

Unique multi-diffraction structures using electronically controlled Bragg diffraction devices such as acousto-optic (AO) devices to accomplish optical beam attenuation control functions. These variable optical attenuator (VOA) modules can be fully inertialess as they can use electronically programmable sub-microsecond speed AO devices to implement optical gain controls. These VOAs deliver desirable capabilities in one optically reversible unit, making high dynamic range, low loss, high power handling, ultra-fast, high optical isolation, broadband operation, self-aligning robust modules. These VOAs can be made essentially independent of the optical polarization of the incident light by the use of a unique fixed waveplate compensation technique within the VOA configuration that suppresses polarization dependent loss. Broadband gain control operation over several wavelengths can be achieved by controlling the frequency and electrical drive power of the chosen frequencies feeding the acousto-optic devices. Interleaver devices can be cascaded with the acousto-optic modules to improve wavelength selectivity of the overall VOA modules. Alternative embodiments can use electrically programmable Bragg gratings in polymer dispersed liquid crystal and acousto-optic tunable filter devices as Bragg grating devices. Embodiments are proposed using independently controlled Bragg diffractions using multiple drive signals connected to multiple device transducers. Drive signal formats can be digital, analog, or a combination for simultaneously driving the VOA modules. Dual-mode VOA module designs are also described using mirror positioning.

A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

Columnar pillars are arranged in a square lattice pattern to form a two-dimensional photonic crystal. The two-dimensional photonic crystal has crystal defects created by the absence of pillars, and a resonator is formed in a line waveguide provided by the crystal defects. The resonator is made up of a main pillar, a pair of sub-pillars disposed at the light incidence side of the waveguide with respect to the main pillar and another pair of sub-pillars at the light emitting side of the waveguide with respect to the main pillar, the main pillar and sub-pillars being disposed in the waveguide. The main pillar and the sub-pillars are formed of the same medium as that of the pillars, and are formed simultaneously with the pillars by patterning a silicon thin film coated all over a silicon substrate through a SiO₂ film formed over the entire surface thereof. Light of a particular wavelength in wavelength-multiplexed incident light is transmitted through the resonator.

Disclosed is a plasmon waveguide including cladding (2) consisted of metal, and a dielectric core (3) which is formed of a transparent material, surrounded by or sandwiched by the cladding (2), and has at least one cross-section having a thickness no more than the wavelength of the incident light. The plasmon waveguide is provided with: a incident-side plasmon waveguide (4) into which light (L) is incident; an emission-side plasmon waveguide (5) from which light (L) is emitted; a connection portion (6) connecting the incident-side plasmon waveguide (4) and emission-side plasmon waveguide (5); and a plasmon interference structure (7) which extends from the connection portion (6) in the direction intersecting the incident-side plasmon waveguide (4) or the emission-side plasmon waveguide (5), and has a terminal (7a) at which light (L) is reflected.

An apparatus for demultiplexing optical signals at a large number of wavelengths using at least one wavelength-selective filter includes at least two wavelength-selective filters in each case for separation of signal components at one wavelength or at two or more wavelengths, located one behind the other in an oblique configuration in the beam path of the apparatus, and disposed such that the signal component that is transmitted by a first filter falls on the subsequent, second filter, the signal component that is reflected by the second filter not being reflected back to the first filter but, instead, running past the first filter, and the signal components that are reflected by the filters are joined together.

The present invention relates to a UV-bandpass filter for transmitting therethrough light having a wavelength included in a UV-region, and the like. The bandpass filter is an optical filter including a thin silver film; whereas the thin silver film comprises an entrance face and an exit face opposing the entrance face, for emitting light having a wavelength included in a specific UV-region whose wavelength ranges from 250 nm to 400 nm in the light having reached the entrance face, and has such a thickness as to yield a transmittance of 10% or less with respect to light having a wavelength excluding the specific UV-region.

The invention discloses a multi-wavelength laser, a preparation method and the application thereof. The multi-wavelength laser is at least composed of an encapsulation substrate, a thermoelectric cooler, a base plate, a piece of slide glass and a laser chip, wherein, the laser chip at least consists of a semiconductor substrate, distributed feedback Bragg raster display, a lower cladding, a lower barrier layer, an active region, an upper barrier layer, an upper cladding, the distributed feedback Bragg raster display and a metal electrode in sequence; the active region is internally provided with an active gain medium which is formed by a plurality of preconcerted quantum dot belts which are made of semiconductor dielectric material and have modulatory components and sizes, and each of the quantum dot belts internally contains a plurality of quantum dots having the same size and uniform distribution; the quantum dots are arranged in line, each of the quantum dot belts is corresponding to different lasing wavelengths, and the sizes of the quantum dots in the quantum dot belts are not the same as each other; the invention is characterized by good wavelength selectivity, high conversion quantum efficiency, high light output power, etc.

An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode and including a first compound represented by Chemical Formula 1 or 2, and a ratio between a FWHM of a light absorption curve depending on a wavelength of the first compound in a solution state and in a thin film state satisfies the following Relationship Equation 1: FWHM2/FWHM1<2.5. In the Relationship Equation 1, FWHM1 is a FWHM of the light absorption curve depending on a wavelength in a solution state, and FWHM2 is a FWHM of the light absorption curve depending on a wavelength in a thin film state.

A wavelength selection filter selectively resonating and reflecting light of a given wavelength contained in incident light, includes a substrate having a rectangular waveform concave and convex structure which is formed on a plane on which the incident light falls incident, the concave and convex structure including convex portions and concave portions which are arranged in one axial direction and a multilayer structure including a first layer and a second layer respectively coating one and the other one of side surfaces, in the one axial direction, of each of convex portions of the concave and convex structure. A refractive index of the first layer and a refractive index of the second layer are both higher than a refractive index of the substrate.

An optical sensor is disclosed. The optical sensor may include a substrate, a topological insulator layer formed on the substrate, an oxide layer formed on the topological insulator layer, a graphene layer stacked on the oxide layer, and a dielectric layer covering the graphene layer.

The invention discloses a mine earthquake monitoring method based on fiber gratings. At least thirty coal sample test blocks are randomly selected from underground to-be-monitored area coal bodies, and change conditions of resonance wavelengths of the fiber gratings are obtained; multiple monitoring points are selected around the to-be-monitored area coal bodies to enable the monitoring points to surround a to-be-monitored area, multiple fiber grating sensors transmit real-time fiber grating resonance wavelength signals to an underground monitoring sub station through multi-core communication cables; the underground monitoring sub station transfers optical signals to a ground receiver; the change conditions of the resonance wavelengths of the fiber gratings of each monitoring point are obtained from the processed signals through a data processing computer; and a real-time comparison between change of the resonance wavelengths of the fiber gratings, monitored in real time and change rules of the resonance wavelengths of the fiber gratings, obtained through tests until comparison consistency occurs, and it is indicated that the coal bodies have the risk of mine earthquakes. The method provided by the invention is high in accuracy and good in real-time performance.

The invention discloses a ring-type bridge pile foundation scour monitoring system and a monitoring method thereof. The ring-type bridge pile foundation scour monitoring system comprises a bridge pilefoundation, a carrying device, sensors and a data processing system; a group of linear tracks are arranged in the circumferential direction along the exterior wall surface of the bridge pile foundation; the carrying device is matched with the linear tracks in a sliding manner; the carrying device comprises a carrying round ring and a group of trundles arranged on the carrying round ring; the sensors are arranged on the surface of the carrying round ring and the bridge pile foundation; and the data processing system is fixed at the top part of the bridge pile foundation and connected with thesensors through conductors for receiving data in the sensors. The invention has the beneficial effect that the ring-type bridge pile foundation scour monitoring system and the monitoring method thereof are applicable for the installation of the bridge pile foundation scour monitoring system and the real-time monitoring to pile foundation scour when in construction.

An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.

The invention discloses a surface plasmon wave length selecting device. The wave length selecting device comprises a substrate and metal posts, wherein the substrate is made of metal; at least two metal posts are vertically arranged on the substrate; the diameter d of the metal posts is from 100 nanometers to 2 micrometers; the height of the metal posts is equal to or larger than 50 nanometers; and the surface plasmons are transmitted along the surface of the substrate, and form a locally intensified electromagnetic field close to the metal post, so as to be reflected or transmitted at different selective wavelengths in virtue of the characteristics of a single metal post and the resonance of various metal posts. The surface plasmon wave length selecting device adopting the structure not only can favorably reflect, transmit and scatter the surface plasmons at selective wavelengths, but also has simple structure, small dimension, and unique advantage of being easy for integration, and is low in cost.

Provided is an integrated semiconductor light source using locking characteristic by an external light injection, including: an active region controlling an optical gain and an optical output by current injection; and a passive region having a structure integrated with the active region and moving a cavity mode by current injection or voltage application to lock injection light.

The invention provides a multi-wavelength laser and a laser sight and relates to the technical field of a laser. The multi-wavelength laser comprises a plurality of laser assemblies arranged in parallel, and a collimating lens. Each laser assembly comprises a pump light source, a coupling lens and an optical fiber. The pump light source, the coupling lens and the optical fiber are arranged coaxially in sequence along light output direction. Each laser assembly outputs one wavelength of laser. The collimating lens is used for collimating the laser output by each laser assembly to enable the laser output by each laser assembly to be output coaxially. The multi-wavelength laser and the laser sight can simplify the structure of the laser, reduce cost and improve ambient temperature adaptability and wavelength selectivity.

A photoelectric device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and including a light absorbing material configured to selectively absorb first visible light including one of visible light in a blue wavelength region of greater than or equal to about 380 nm and less than about 500 nm, visible light in a green wavelength region of about 500 nm to about 600 nm, and visible light in a red wavelength region of greater than about 600 nm and less than or equal to about 700 nm, and a plurality of nanostructures between the first electrode and the photoelectric conversion layer and configured to selectively reflect the first visible light.

The invention discloses a wavelength division multiplexing dual-wavelength fiber delaying temperature sensor, belongs to the technical field of fiber temperature sensors, and solves the problems of complex structure, high cost and low transmission relative time delay efficiency of optical signals in the prior art. The wavelength division multiplexing dual-wavelength fiber delaying temperature sensor comprises a dual-wavelength light emitting module, a wavelength division multiplexing device, a light reception module, a signal processing and control module, a transmission fiber and a sensing fiber. Wavelength division multiplexing dual wavelength optical path design is employed, and the temperature is determined by measuring the relative time delay of dual-wavelength optical signals. The sensing fiber employs a common quartz (SiO2) fiber, and the measured temperature scope is increased. The temperature sensor has the advantages of simple structure, low cost and easy promotion and application.

A light emitting device has a substrate and a light-emitting section formed on the substrate. The light-emitting section includes a light-emitting layer in which light is generated by electro-luminescence, first and second electrodes used to apply electric charges to the light-emitting layer, and first and second dielectric multi-layered films between which the light-emitting layer is interposed. The first and second electrodes are disposed to avoid overlap with a light-emitting region in the light-emitting layer as viewed from a light emitting direction.