9results about How to "Increase output optical power" patented technology

The invention discloses an electro-absorption modulated laser chip and a manufacturing method thereof, and relates to the technical field of semiconductor devices.The chip comprises a substrate, a modulator layer, a passive waveguide layer, a laser layer, an amplifier layer, a wrapping layer and a contact layer, the passive waveguide layer is arranged in a spacer region between the laser layer and the modulator layer in a butt-joint growth mode, the amplifier region is arranged on the other side of the modulator layer, the laser layer is arranged in the laser region on one side of the passive waveguide layer in the spacer region in a butt-joint growth mode, and the amplifier layer is arranged above the passive waveguide layer in the amplifier region. The cladding layer and the contact layer are sequentially arranged above the functional layer, a mask is used for covering a specific area in the butt-joint growth process, and the mask is removed after growth; according to the technical scheme, the active gain material of the amplifier region can be manufactured on the passive waveguide material while the manufacturing steps are simplified, the optical signal loss is reduced, and the chip saturated light output power is improved.

A homodyne detection Doppler wind measurement laser radar device based on a silicon optical chip comprises a light source module, a photoelectron chip module, a semiconductor optical amplifier, an erbium-doped optical fiber amplifier, an optical circulator, an optical transceiver antenna, a transimpedance amplifier processing module, an A / D acquisition card module, a digital signal processing module and a display and storage module. Discrete devices such as a beam splitter, a frequency mixer and a detector in an optical fiber link are integrated on one chip, high-density integration with other components is carried out through the photoelectric hybrid packaging technology, and chipping and miniaturization of the all-optical-fiber wind finding radar are achieved. The semiconductor optical amplifier (SOA) is used for chopping, a homodyne detection method is used for eliminating the requirement for frequency shift, and compared with a traditional Doppler wind measurement laser radar, the Doppler wind measurement laser radar has the advantages of being small in power consumption, small in size, light in weight, high in integration level, convenient to produce in a large scale, low in cost of a single device and the like.

The invention relates to a method for preparing a VCSEL device, in particular to a method for preparing a VCSEL device with a non-oxidized tunnel junction series multi-quantum well structure, which solves the technical problems of low optical power density and electro-optical efficiency, large light output aperture, low modulation rate, inability to be integrated at high density and low brightness in VCSEL devices prepared by the prior art. The invention provides a method for preparing a VCSEL device with a non-oxidized tunnel junction series multi-quantum well structure, comprising the steps of epitaxially growing an N-type DBR structure, epitaxially growing a first quantum well and a first phase adjustment layer to form a first intermediate terrace, preparing a first ion implantation layer, epitaxially growing a first tunnel junction, epitaxially growing a second quantum well, a second phase adjustment layer, a second intermediate platform, a second ion implantation layer and a second tunnel junction, epitaxially growing a third quantum well, a third phase adjustment layer, a third intermediate platform and a third ion implantation layer, epitaxially growing a P-type DBR structure, preparing an ohmic contact electrode and performing wafer cleavage.

The invention provides a wavelength-controlled pump MOPA laser and a method of operation thereof. A monolithic semiconductor MOPA laser chip (100) has a DFB-laser based master oscillator (120) and a power amplifier section (130) formed in a same monolithic waveguide, and separate MO and PA electrodes (111,112) for individual control of current injection into the MO and PA sections. The laser wavelength is defined by the DFB grating (150) and is kept fixed by suitably controlling the MO current to compensate for a thermal crosstalk from the PA section, or tuned by suitably changing the MO current or direct heating of the DFB region. Stabilisation may be performed with a photodetector at the output and a look-up table in order to control the currents provided to the MO and the PA section.

This invention discloses a strained quantum well vertical-cavity surface-emitting laser, comprising a top reflector and a bottom reflector, with a top spacer (p-spacer) and a bottom spacer (n-spacer) between the top and bottom reflectors. A first active region and a second active region are disposed between the top and bottom spacers, and a tunneling junction is disposed between the first and second active regions. This invention employs a dual-active-region structure, designing a tunneling junction structure between the two active regions. This allows the injected carriers to undergo two optical gain cycles within the dual-active-region structure, thus multiplying the output optical power and improving the photoelectric conversion efficiency.

The invention relates to a universal high-power attosecond optical field synthesis instrument and a synthesis method, and solves the technical problems that in the prior art, chirp reflectors are large in occupied space, small in number and difficult to adjust, synthesis of attosecond pulses cannot be achieved under the condition that dispersion differences of different wavebands of a wide spectrum are large, and the thermal stability is poor or the operation difficulty is large. The instrument comprises an optical field synthesis base and a heat dissipation device, an incident light filter and a beam splitter or a reflector are sequentially arranged on the light field synthesis base along a light path of incident light, the incident light is divided into three beams of reflected light, the three beams of reflected light are combined into emergent light by the beam splitter or the reflector after passing through the three channels respectively, and an emergent light path is provided with an emergent light filter; the three channels comprise optical filters, thin fused quartz wedge pairs, multi-pass reflection structures and a plurality of reflectors which are arranged on corresponding optical paths, and parameters of each element are respectively matched with wave bands of the corresponding optical paths.

The invention discloses an underwater long-distance imaging system based on a super-bunching light field, and relates to the technical field of underwater optical imaging, the underwater long-distance imaging system comprises a super-continuum light source, a light emitting module, a light receiving module, a noise generation module, a data acquisition module and a data processing module, the super-continuum light source comprises a super-continuum laser and a frequency selector, the light emitting module comprises a reflector I, a reflector II and a lens I, the light receiving module comprises a lens II, a lens III, a reflector III, a lens IV and a lens V, the noise generation module comprises a signal generator and a light emitting diode, and the data acquisition module comprises a single photon tester I and a single photon tester II. And the data processing module comprises a digital analyzer and a computer. According to the underwater long-distance imaging system based on the super-bunching light field, the anti-interference performance on water noise and the image quality of underwater imaging are improved, and meanwhile the underwater imaging distance is increased.

The laser and the optical module provided by the present disclosure, the laser comprises an N-InP substrate layer and a buried zone P-InP substrate layer. The active layer and the grating layer are arranged in the buried zone. The P-InP layer has strong absorption to the optical field due to the high free carrier concentration, resulting in optical loss. The introduction of the doped layer with high refractive index in the N-InP substrate layer makes the optical field deviate to the N-InP substrate layer, thereby reducing the optical absorption loss of the P-InP layer. The buried zone comprises a first connecting area, a second connecting area and a third connecting area, and the sidewalls of the three connecting areas are formed based on different etching processes. The first connecting area is formed based on dry etching, and the bottom surface of the first connecting area is located above the active layer to avoid damage to the active layer during the dry etching process. The second connecting area is formed based on a surface treatment process. The third connecting area is formed based on wet etching, which ensures that the first doped layer is not etched too much to protect the doping characteristics of the doped layer.

The utility model provides a lens array structure, and aims to solve the problems of unstable connection between a lens array and an optical fiber, low optical transmission efficiency, high assembly difficulty and the like in the prior art. The structure is characterized in that a lens array can efficiently couple laser emitted by a laser into an optical fiber through optical design; the optical fiber patch cord is matched with the limiting groove of the lens array through a cylindrical anchor point, so that high-precision positioning is realized; the optical fiber glue injection bin can inject UV glue or matching liquid with the same refractive index as the optical fiber, the unevenness of the fracture surface of the optical fiber is optimized, and the optical transmission effect is improved; a tight package positioning point and a loose package positioning point between the lens array and the laser or photodiode substrate realize rapid positioning and preliminary fixation of the lens array. According to the utility model, through multi-dimensional innovative design, the optical transmission efficiency, the assembly precision and the structural stability are obviously improved, and the device is suitable for the fields of optical communication, laser processing and the like.