72results about How to "Increase output optical power" patented technology

The invention relates to the active optics phase conjugate method and the imaging device, the optical switch. It constructs the mode separation/integration convertor by the optical waveguide array which is set together at one end, the optics field couples with each other; it is set separately in the other end. It leads the optical wave into the separating optical waveguide by the separation/integration convertor, then to achieve the active optics phase conjugate by adjusting the phase and the swing. It can solves the imaging problem in many limit condition such as big size, high quality, super quick focal variation, long distance and so on. So it can be used in the field of the computer-human conversation, the robot optics, the integrate circuit photoetching, information storage, the military affairs, the energy source, the biology and the light communication network.

Scenes captured with an endoscope (201) of a teleoperated surgical system (200) and displayed on a display unit (251) maintain a consistent brightness even though optical output power of an illuminator (210) changes, and working distance (204) between tissue (203) and the distal tip of the endoscope changes. Teleoperated surgical system (200) also automatically detects when endoscope (201) contacts tissue (203) and adjusts the output optical power of illuminator (210) so that tissue damage does not occur.

The invention discloses a hybrid silicon-based whispering gallery mode microcavity laser which adapts to a light source part of a silicon-based photonic integrated circuit. The hybrid silicon-based whispering gallery mode microcavity laser comprises a silicon-based waveguide part and an III-V semiconductor gain part. The III-V semiconductor gain part is formed on the silicon-based waveguide part. The silicon-based waveguide part is in an SOI (silicon-on-insulator) structure with silicon, silicon dioxide and silicon. The silicon-based waveguide part is made into a triangular, rectangular, circular or waveguide-coupled output form to allow for longitudinal mode control. The III-V semiconductor gain part made of gain material is bonded to the SOI structure directly and matches with the SOI structure to form evanescent field coupling output. The hybrid silicon-based whispering gallery mode microcavity laser has the advantages that single-mode output of laser source on a silicon-based semiconductor surface is achieved by a right-triangular, square or round whispering gallery mode microcavity, cavity surface need not be split, large-scale processing is facilitated, optical coupling output and single longitudinal mode operation are easy to implement, and the laser is simpler in process and higher in practicality than the conventional single-mode lasers.

The present invention provides an AlGa-based semiconductor ultraviolet device for improving luminous efficiency and a preparation method thereof, and relates to the technical field of semiconductors.The epitaxial structure of the device comprises a substrate, an AlN buffer layer, an n-type AlGaN layer, an AlxGa1-xN/AlyGa1-yN luminescence active region, the last one AlGaN quantum barrier layer, ap-type AlGaN electron blocking layer, a p-type AlGaN layer and a contact layer, wherein 0.01<=x and y<=1. The luminescence active region comprises a plurality of quantum well layers and a plurality ofquantum barrier layers, the quantum well layers and the quantum barrier layers are alternately arranged, and the last one AlGaN quantum barrier layer is an aluminium ingredient gradient layer. The last one AlGaN quantum barrier layer of aluminium ingredient gradient is introduced in the ultraviolet device to optimize the energy band structure of the device, effectively improve the electron restriction effect and enhance the cavity injection efficiency so as to improve the quantum efficiency and the luminescence efficiency of the semiconductor ultraviolet device.

The invention provides a wavelength-controlled pump MOPA laser and a method of operation thereof. A monolithic semiconductor MOPA laser chip has a DFB-laser based MO (master oscillator) and PA (power amplifier) sections formed in a same monolithic waveguide, and separate MO and PA electrodes for individual control of current injection into the MO and PA sections. The laser wavelength is defined by the DFB grating and is kept fixed by suitably controlling the MO current to compensate for a thermal crosstalk from the PA section, or tuned by suitably changing the MO current or direct heating of the DFB region.

The invention discloses a flip-chip structure micro-size photonic crystal LED array chip and a preparation method thereof. The LED array chip of the invention has four light emitting units connected in parallel, the metal connecting line of the positive electrode and the semiconductor material are separated by a dielectric insulation layer, and the negative electrode is directly covered on the upper surface of the semiconductor material. The active region of the light-emitting unit has a photonic crystal with periodic distribution, and the depth of the photonic crystal exceeds the depth of theactive layer. Except electrode pad, DBR is distributed on the whole chip surface. Metal electrodes form metal mirrors. The preparation method of the invention adopts the scheme that an ohmic contactlayer and an electrode are firstly prepared and then a photonic crystal is etched without planarizing and the like traditional process flow; Using thick strip dielectric insulating layer to insulate the electrode from semiconductor material and thin dielectric mask layer and adhesive mask layer to etch together is conducive to the deposition of DBR and the rapid escape of photon mode. The processflow of the invention is simple and reliable.

The invention relates to a packaging structure for a laser diode, comprising an electrically insulated, heat-conducting board having an electronic circuit thereon; a laser diode chip mounted on the electronic circuit of the electrically insulated, heat-conducting board and having an anode and a cathode, respectively connected to an external soldering pad for external electrical connections; and a heat-conducting base installed on a surface of the electrically insulated, heat-conducting board to conduct the heat generated by the laser diode chip to the heat-conducting base through the electrically insulated, heat-conducting board, wherein the laser diode chip emits the light from an edge of the electrically insulated, heat-conducting board and the area of a faying plane between the electrically insulated, heat-conducting board and the heat-conducting base is adjusted depending on the power requirements of the laser diode, and the area of the faying plane is from 6 to 5,000 mm².

The invention discloses a multi-wavelength laser, a preparation method and the application thereof. The multi-wavelength laser is at least composed of an encapsulation substrate, a thermoelectric cooler, a base plate, a piece of slide glass and a laser chip, wherein, the laser chip at least consists of a semiconductor substrate, distributed feedback Bragg raster display, a lower cladding, a lower barrier layer, an active region, an upper barrier layer, an upper cladding, the distributed feedback Bragg raster display and a metal electrode in sequence; the active region is internally provided with an active gain medium which is formed by a plurality of preconcerted quantum dot belts which are made of semiconductor dielectric material and have modulatory components and sizes, and each of the quantum dot belts internally contains a plurality of quantum dots having the same size and uniform distribution; the quantum dots are arranged in line, each of the quantum dot belts is corresponding to different lasing wavelengths, and the sizes of the quantum dots in the quantum dot belts are not the same as each other; the invention is characterized by good wavelength selectivity, high conversion quantum efficiency, high light output power, etc.

The invention provides a micron-sized diode chip. The micron-sized diode chip comprises a first table surface, a second table surface, a gallium nitride layer, an n-GaN layer, a stress release layer,a multi-quantum-well light-emitting layer, a p-GaN layer, a first electrode, a second electrode and an insulating layer, wherein the sizes of the first table surface and the second table surface are different. The technical problems that an original LED is low in output light power and large in mismatch with GaN in thermal expansion rate and lattice constant are avoided; and the technical effectsof integration of multiple functions of communication, illumination, detection and the like on the same chip, and high light extraction efficiency are achieved.

The present invention relates to an optical signal processing element capable of performing various functions of equalization of output power, wavelength converting, reshaping or reamplifying an input optical signal using an optical amplifier in which saturable absorbers are integrated, the saturable absorbers being used as an optical gate to improve the extinction ratio of the input optical signal. The saturable absorber and the optical amplifier are connected in series, and a transparent output optical power outputted from the saturable absorber is not less than a saturation input optical power of the optical amplifier.

The invention provides a multi-junction distributed feedback semiconductor laser. The laser comprises a substrate and a laser DFB-LD functional layer growing on the surface of the substrate; the DFB-LD functional layer comprises a plurality of semiconductor PN junctions and a grating; the plurality of semiconductor PN junctions are distributed up and down and are electrically connected with each other, and a junction region of each PN junction is provided with a light-emitting region; and the grating is positioned on any one of the semiconductor PN junctions or a connecting layer between the semiconductor PN junctions. According to the DFB-LD, the effective light emitting area of the laser can be increased, the symmetry of the transverse light field distribution of the waveguide cross section is improved, and the parasitic capacitance parameter of the laser is reduced, so that the laser has the advantages of high power, high modulation rate and high optical fiber coupling efficiency.

The invention discloses an amplified spontaneous emission light source device, which comprises a circuit part and a light path part. Light emitted by a pump laser enters an erbium-doped fiber after passing through a wavelength division multiplexer to generate primary forward amplified spontaneously emitted light and backward amplified spontaneously emitted light. An A/D conversion circuit is connected with an output light power detection circuit, a current acquisition circuit and a temperature acquisition circuit. The pump laser is connected with an automatic temperature control circuit, a laser drive circuit, the temperature acquisition circuit and the current acquisition circuit. The laser drive circuit is connected with a D/A conversion circuit. A singlechip system is connected with the A/D conversion circuit, the D/A conversion circuit, a serial communication circuit, a liquid crystal display (LCD) circuit and a key scanning circuit. A power management circuit supplies power to each circuit. The amplified spontaneous emission light source device provided by the invention is convenient to use and high in working performance and output light power.

The invention discloses an asymmetric micro-cavity edge emitting semiconductor laser array, and belongs to the technical field of semiconductor lasers. An existing semiconductor laser stack array faces multiple technical problems in beam shaping and output coupling. According to the asymmetric micro-cavity edge emitting semiconductor laser array, laser single tubes forming the laser array are asymmetric micro-cavity edge emitting semiconductor lasers; a front row of laser linear arrays and a back row of laser linear arrays are located on the same substrate; in the front row of the laser lineararrays, the 3-4 laser single tubes are linearly arranged according to the same geometric center distance; in the back row of the laser linear arrays, the 2-4 laser single tubes are linearly arrangedaccording to the same geometric center distance; the geometric center distance of each laser single tube in the front row of the laser linear arrays is the same as the geometric center distance of each laser single tube in the back row of the laser linear arrays; the laser single tubes are same in light-emitting direction, and are forward; and an optical axis of light emitted by each laser singletube in the back row of the laser linear arrays is away from the geometric center of the closest laser single tube in the front row of the laser linear arrays for 1/2 of the geometric center distance.

The invention discloses a distributed optical fiber temperature sensing system, which comprises a pulse light source, a modulator, a circulator, a band-pass filter, a first photoelectric detector, a second photoelectric detector, a signal processing device and a driver, and an optical fiber amplifier is connected between the modulator and the circulator, and the input end of the optical fiber amplifier is connected with the light output end of the modulator; and the first light input end of the modulator is connected with the output end of the pulse light source, and the output end of the optical fiber amplifier is connected with the input end of the circulator. The system can be applied to long-distance temperature detection, the detection precision of signal light is high, the temperature detection range is wide, and the problems that a distributed optical fiber temperature sensing system in the prior art is short in detection distance and low in temperature detection precision are solved.

An apparatus has first and second light sources, a plurality of filters, and an optical switch. The light sources output a light beam having a spectrum determined by a gain band thereof. The plurality of filters each have a reflection band included in the gain band. The optical switch selectively couples the filters to the light source. The first and second light sources provide pumping light to a single transmission line. The first and second filters are configured so as to not reflect signal light to be amplified.