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Bragg grating external cavity semiconductor laser module beam combining device

A technology of Bragg gratings and semiconductors, applied in the field of lasers, can solve the problems of increasing the number of Bragg gratings, increasing the cost of beam combining devices, and poor locking effects, achieving good locking effects, reducing the number of uses, and increasing the output optical power.

Active Publication Date: 2021-03-19
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is that each light-emitting module in the existing semiconductor laser module beam combining device needs to use a corresponding Bragg grating for wavelength locking, which increases the number of Bragg gratings, resulting in an increase in the cost of the beam combining device, and The technical problems of high difficulty in adjustment and poor locking effect provide a beam combining device with lower cost and better locking effect

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  • Bragg grating external cavity semiconductor laser module beam combining device
  • Bragg grating external cavity semiconductor laser module beam combining device
  • Bragg grating external cavity semiconductor laser module beam combining device

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Embodiment Construction

[0051] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0052] In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as there is no conflict with each other.

[0053] The Bragg grating external cavity semiconductor laser module beam combiner of this embodiment, such as Figure 1 to Figure 8 As shown, it includes at least one light-emitting module 1, at least one conductive fiber 2 and a Bragg grating 3, wherein the light-emitting module 1 includes at least two light...

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Abstract

The invention relates to a Bragg grating external cavity semiconductor laser module beam combining device, and the device comprises at least one light emitting module; the light emitting module comprises at least two light emitting units; at least one conduction optical fiber which is arranged on an output light path of the light-emitting module; a Bragg grating is arranged on an output light pathof the conduction optical fiber, the Bragg grating and the output end of the light-emitting module form an outer cavity, laser output through the conduction optical fiber vertically enters the incident end face of the Bragg grating, part of the laser is transmitted to serve as output light to be output, and part of the laser is reflected to serve as feedback light to return into the light-emitting module along the original path to achieve wavelength locking. An outer cavity is formed by one Bragg grating and a plurality of light-emitting modules, so that the cost of the beam combining deviceis reduced. The Bragg grating only feeds back part of light beams perpendicular to the incident end face, the output light power is improved, the light intensity fed back by the Bragg grating is ensured by limiting the core diameter of the conduction optical fiber and the distance between the conduction optical fiber and the Bragg grating, and a better locking effect is achieved.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a beam combining device for a Bragg grating external cavity semiconductor laser module. Background technique [0002] High-power laser chips are often used as pump sources for solid-state lasers (such as thin slices, conductive fibers, and slab lasers), so their efficiency, spatial and spectral characteristics of laser emission determine the performance of solid-state lasers. High-power laser chips are also used in industrial fields such as direct material processing (e.g., surface treatment, welding, additive manufacturing, cutting), and show the potential to replace solid-state and guided fiber lasers. The increase in output power and brightness is the main driving force for the expansion of the application range of direct high-power laser chips. High-power, high-brightness laser output is usually obtained through beam combining technology. [0003] Laser beam combining techno...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40H01S5/14
CPCH01S5/141H01S5/146H01S5/4012
Inventor 孙舒娟俞浩王俊虞天成
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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