The present application relates to the technical field of
semiconductor manufacturing, in particular to a nanometer high-precision bonding mark measurement
system, which mainly solves the technical problems of interference ghost interference, high
system complexity and sensitivity to object table parameters in the existing nanometer high-precision bonding mark measurement
system. The system comprises a transparent object table, a collimating
light source, an imaging module and a
processing module; the upper and lower surfaces of the optical window of the transparent object table are provided with an antireflection film; the collimating
light source is arranged below the transparent object table to provide
collimated light penetrating the optical window and the
wafer pair; the imaging module collects the superimposed image of the alignment marks of the upper and lower wafers; and the
processing module is used for determining the center positions of the upper and lower
wafer marks and calculating the alignment deviation. The system suppresses the interference ghost caused by the multiple reflections of the transparent object table through the collimating
light source, and the antireflection film suppresses the
reflection loss, thereby improving the
image contrast and positioning accuracy; at the same time, the
optical path structure is simplified, and the system is not sensitive to the thickness of the transparent object table, thereby improving the
system stability and production efficiency.