30results about How to "Increase compound rate" patented technology

The method is applicable to manufacture silicon semiconductor binistor with at least one PN junction such as GTO, IGBT etc. General manufacturing steps is carried out till the step of making metalized electrode. Platinum-silicon alloy is made on surface of silicon. Using proton or particle injection forms local high density defect area. Heating and annealing makes the defect area absorb platinum to convert to platinum impurity range. Then, General manufacturing steps is carried out till manufacturing completion. The performances of the invention are better than present life control technique. The parts made by the invention possesses higher switching speed and backward recovery speed, but the forward voltage drop and reverse leakage are not increased visibly.

The invention discloses a preparation method of oxygen-sulfur dual-doped graphite phase carbon nitride. The method comprises the following steps: performing one-step thermal polymerization on melamineand L-cysteine at a temperature of 400-700 DEG C according to a mass ratio (1.5-2.5):100 of the L-cysteine to melamine, thereby obtaining the oxygen-sulfur dual-doped graphite phase carbon nitride. According to dual doping in the invention, the element O and the element S respectively enter the graphite phase carbon nitride in a chemical bond form. The energy gap of the doped graphite phase carbon nitride is reduced, the impedance is reduced, the graphite phase carbon nitride has high photocatalytic activity, and the photocatalytic nitrogen fixation efficiency of 2.0% of GCNOS reaches 0.509 mMg<-1>h<-1> within 240 minutes, and reaches 2.1 times that of the photocatalytic nitrogen fixation efficiency of pure graphite phase carbon nitride.

The invention discloses a hexagonal boron nitride modified graphitized carbon nitride composite optical catalyst as well as a preparation method and application thereof. According to the composite optical catalyst, by taking graphitized carbon nitride as a carrier, laminated hexagonal boron nitride modifies the graphitized carbon nitride carrier. The preparation method comprises the following steps: mixing the hexagonal boron nitride with a graphitized carbon nitride precursor; and calcining the mixed precursor to obtain the hexagonal boron nitride modified graphitized carbon nitride composite optical catalyst. The hexagonal boron nitride modified graphitized carbon nitride composite optical catalyst disclosed by the invention has the advantages of being environmentally friendly, fully free of metal doping, large in specific surface area, high in photoproduction electron-hole separating efficiency, high in optical catalytic activity, good in stability, corrosion-resistant and the like. The preparation method has the advantages of being simple, low in cost of raw materials, less in energy consumption, easy to control conditions and the like. The composite optical catalyst disclosed by the invention is used for degrading dye wastewater and has the advantages of being simple in application method, stable in optical catalytic performance, high in corrosion resistance, high in dye wastewater degrading efficiency.

The invention discloses a flip-chip structure micro-size photonic crystal LED array chip and a preparation method thereof. The LED array chip of the invention has four light emitting units connected in parallel, the metal connecting line of the positive electrode and the semiconductor material are separated by a dielectric insulation layer, and the negative electrode is directly covered on the upper surface of the semiconductor material. The active region of the light-emitting unit has a photonic crystal with periodic distribution, and the depth of the photonic crystal exceeds the depth of theactive layer. Except electrode pad, DBR is distributed on the whole chip surface. Metal electrodes form metal mirrors. The preparation method of the invention adopts the scheme that an ohmic contactlayer and an electrode are firstly prepared and then a photonic crystal is etched without planarizing and the like traditional process flow; Using thick strip dielectric insulating layer to insulate the electrode from semiconductor material and thin dielectric mask layer and adhesive mask layer to etch together is conducive to the deposition of DBR and the rapid escape of photon mode. The processflow of the invention is simple and reliable.

The invention discloses glass powder, and relates to the field of silver electrode slurry. The glass powder comprises the following components in parts by weight: 25-50 parts of lead oxide, 25-45 parts of tellurium oxide, 10-30 parts of bismuth oxide, 2-10 parts of molybdenum oxide, 0-6 parts of silicon dioxide, 0-6 parts of boron oxide, 0-4 parts of alkaline earth metal oxide, 0-6 parts of alkalimetal oxide and 0-3 parts of rare earth metal oxide. The invention further provides TOPCon battery silver paste containing the glass powder, the contact performance of the TOPCon battery silver pasteon thin Poly (60-100 nm) and metal compounding can be balanced, and the efficiency of a client is improved by 0.1% or above.

The invention discloses a high-speed LED optical communication modulator. The high-speed LED optical communication modulator comprises a control unit and a variable power supply unit; the variable power supply unit is an energy supply unit capable of switching in the positive and negative directions; the control unit generates switching and sequential control signals so that the variable power supply unit is driven to supply power to an LED; the sequential control signals are used for reducing the bending of an energy band via sequential control so that radiative recombination of carriers is improved; when the variable power supply supplies power in the positive direction, the LED is turned on, and the carriers are over-injected; and when the variable power supply supplies power in the reverse direction, the LED is turned off, and the carriers are injected in a reverse manner. The high-speed LED optical communication modulator also comprises a discharge circuit used for further accelerating the turn-off. According to the high-speed LED optical communication modulator, the over-injection of the carriers during turn-on and reverse injection of the carriers during turn-off are controlled so that the recombination rate of the carriers is increased, and the switching speed is greatly increased; the turn-off is further accelerated via the auxiliary discharge circuit; and the bending of the energy band is reduced via sequential control, and the radiative recombination of the carriers is improved.

The embodiment of the invention discloses a distributed feedback laser chip and a preparation method thereof. The laser chip comprises a substrate, a laser structure located on one side of the substrate, a first electrode and a second electrode. A grating pattern is arranged on the side, adjacent to the second electrode, of the laser structure, the grating pattern comprises a ridge-shaped structure, the ridge-shaped structure comprises first areas and second areas which are circularly arranged in the first direction, and the refractive index of the first areas is larger than that of the secondareas; the second electrode covers the ridge-shaped structure, extends to partial regions of the second regions and is in contact with a film layer, close to one side of the substrate, of the film layer where the grating pattern is located, wherein the first direction is parallel to the plane where the substrate is located. The technical scheme of the embodiment of the invention has the advantages of high modulation rate, high internal quantum efficiency, low resistance, good single-mode characteristic, small stress, low cost and the like, can greatly improve the modulation rate, the electro-optical conversion efficiency, the single-mode characteristic, the production yield and the like of the laser, and is very beneficial to large-scale production and application.

The invention discloses a white light organic light emitting diode and a manufacturing method thereof. The white light organic light emitting diode comprises an ITO glass substrate, a hole transport layer, a nano particle layer, a white light emitting layer, an electron transmission layer and a composite metal cathode layer stacked sequentially from bottom to top, wherein the nano particle layer is formed by mixing of silica-coated silver nanometer cubes and silica nanospheres. In comparison with the prior art, through introducing the silica-coated silver nanometer cubes and the silica nanospheres, the performance of the white light organic light emitting diode is effectively enhanced, and potential application value is achieved.

The invention belongs to the field of photoelectric devices, and discloses a rare earth electrogenerated dark blue light device. The device sequentially comprises a top electrode, an electron transport layer, a light emitting layer, a hole transport layer and a bottom electrode from top to bottom, wherein the light emitting layer is made of an Eu-based perovskite type material, and in the Eu-basedperovskite type material, an Eu element occupies a B site in a perovskite ABX3 structure and does not contain Pb; the electron transport layer and the hole transport layer are used for localizing electrons or holes in the light-emitting layer and adjusting injection balance of the electrons and the holes. According to the invention, the Eu-based perovskite type material (such as CsEuBr3) is usedas a luminescent layer material to construct the rare earth electrogenerated dark blue light device, and the material is an inorganic material, so that the material is good in stability, not easy to age and long in service life, the existing display color gamut can be widened, and the technical problems of poor OLED stability, easy aging and easy blue light color distortion are solved.

The invention relates to the field of crystalline silicon surface coating, in particular to a novel plasma enhanced chemical vapor deposition (PECVD) coating technology. The technology comprises the steps that crystalline silicon is placed into a furnace and heated, and the temperature is stabilized; ammonia gas is introduced for purging; vacuumizing for leakage detection is performed; pre-deposition is performed; chemical reaction gas is injected, and radio frequency ionization is performed; vacuumizing is performed; gas is injected; annealing is performed; and the coated crystalline siliconis taken out of the furnace. According to battery pieces prepared through silicon wafers coated by means of the coating technology provided by the invention, bombardment damage on the surfaces of thesilicon wafers is repaired, the number of dangling bonds on the surfaces of the silicon wafers is decreased, the number of recombination centers is decreased, the recombination rate of electrons is decreased, the number of electron hole pairs used for outputting current is increased, the short-circuit current of the battery pieces is increased, the efficiency of the battery pieces is improved, andthe competitiveness in the industry is greatly enhanced.

The invention relates to the field of photoelectric semiconductors, and particularly relates to an ultrafast micro-LED of an MIS structure based on local surface plasmon coupling enhancement and a production method of the ultrafast micro-LED. The micro-LED sequentially comprises a substrate, a buffer layer, a gallium nitride layer, a p-type active layer, an insulating layer, a current expansion layer and a metal nanoparticle structure from bottom to top, an opening extending to the surface of the p-type active layer is formed in the surface of the metal nanoparticle structure so that an exposed area is formed on the surface of the p-type active layer, a p-type ohmic contact electrode is arranged on the surface of the exposed area, and an n-type ohmic contact electrode is arranged on the surface of the metal nanoparticle structure. According to the micro-LED provided by the invention, the carrier recombination rate and recombination efficiency of the device can be effectively improved, and the service life of effective carriers is shortened so that the modulation bandwidth of the device is greatly increased, and the application of the micro-LED in optical communication is expanded.

The invention relates to a high-speed modulation light emitting diode and a manufacturing method thereof. The light emitting diode comprises a light emitting diode chip comprising a light emitting epitaxial structure. The light emitting epitaxial structure comprises a buffering layer, a first N-type gallium nitride contact layer, a gallium nitride depletion layer, a P-type aluminum gallium nitride electronic barrier layer, a first P-type indium gallium nitrogen layer, a quantum well layer, a second P-type indium gallium nitrogen layer, an N-type gallium nitride layer, a second N-type gallium nitride contact layer and a conductive layer. The quantum well layer is one of an undoped In<0.2>Ga<0.8>N/In<0.05>Ga<0.95>N quantum well layer and an indium gallium nitrogen/gallium nitride quantum well layer of a silicon doping barrier whose deposition quardi-period condensation is 5*1017 cm<-3>. The invention also provides a manufacturing method of the high-speed modulation light emitting diode. According to the invention, while the high-speed modulation light emitting diode is kept with light outputting power similar to that of a traditional light emitting diode, modulation width is increased.