30results about How to "Increase compound rate" patented technology

The method is applicable to manufacture silicon semiconductor binistor with at least one PN junction such as GTO, IGBT etc. General manufacturing steps is carried out till the step of making metalized electrode. Platinum-silicon alloy is made on surface of silicon. Using proton orª‡particle injection forms local high density defect area. Heating and annealing makes the defect area absorb platinumto convert to platinum impurity range. Then, General manufacturing steps is carried out till manufacturing completion. The performances of the invention are better than present life control technique. The parts made by the invention possesses higher switching speed and backward recovery speed, but the forward voltage drop and reverse leakage are not increased visibly.

The invention discloses a high-speed LED optical communication modulator. The high-speed LED optical communication modulator comprises a control unit and a variable power supply unit; the variable power supply unit is an energy supply unit capable of switching in the positive and negative directions; the control unit generates switching and sequential control signals so that the variable power supply unit is driven to supply power to an LED; the sequential control signals are used for reducing the bending of an energy band via sequential control so that radiative recombination of carriers is improved; when the variable power supply supplies power in the positive direction, the LED is turned on, and the carriers are over-injected; and when the variable power supply supplies power in the reverse direction, the LED is turned off, and the carriers are injected in a reverse manner. The high-speed LED optical communication modulator also comprises a discharge circuit used for further accelerating the turn-off. According to the high-speed LED optical communication modulator, the over-injection of the carriers during turn-on and reverse injection of the carriers during turn-off are controlled so that the recombination rate of the carriers is increased, and the switching speed is greatly increased; the turn-off is further accelerated via the auxiliary discharge circuit; and the bending of the energy band is reduced via sequential control, and the radiative recombination of the carriers is improved.

The invention relates to a high-speed modulation light-emitting diode and a manufacturing method thereof. It includes a light-emitting diode chip, the light-emitting diode chip includes a light-emitting epitaxial structure, and the light-emitting epitaxial structure includes a buffer layer stacked in sequence, a first N-type GaN contact layer, a GaN depletion layer, a P-type AlGaN electron blocking layer, The first p-type indium gallium nitride layer, the quantum well layer, the second p-type indium gallium nitride layer, the n-type gallium nitride layer, the second n-type gallium nitride contact layer and the conductive layer, and the quantum well layer is undoped Any one of the In0.2Ga0.8N / In0.05Ga0.95N quantum well layer and the indium gallium nitride / gallium nitride quantum well layer deposited with a silicon-doped barrier with a concentration of 5×1017 cm-3 for four periods. The invention also provides a manufacturing method of the high-speed modulation light-emitting diode. The high-speed modulation light-emitting diode provided by the invention increases the modulation width while retaining light output power close to that of the traditional light-emitting diode.

The invention discloses a high-speed LED optical communication resonant modulator, which includes a power supply unit, a control unit, an inductor, a resistor, a capacitor, an LED, a switch K101 and a switch K103; when K101 and K103 are turned on, the voltage limiting and constant current control unit Supply power to the LED in the forward direction, so that the LED is turned on quickly, and the resonant capacitor stores energy through the resonant inductor; when K103 is still on and K101 is off, the inductance and capacitor resonate, and the LED reverse recovery time To supply power, so that the LED fast electrical shutdown. It also includes K102. When K102 is turned on and K101 and K103 are turned off, the LED is further forwardly discharged in one direction. The invention improves the recombination rate of the carrier, so that the switching speed is greatly increased; the turn-off is further accelerated through the auxiliary discharge path; the bending of the energy band is reduced through the time sequence control, and the radiation recombination of the carrier is improved.

The invention discloses a visible light communication LED device, comprising four LED chips of which the geometric centers are overlapped and positioned on the same plane. The four LED chips are a first annular chip, a second annular chip, a third annular chip and a center chip from outside to inside. The edge of each chip is coiled with an annular metal positive electrode. The bottom surface of the visible light communication LED device, namely an n-type bottom surface of each chip, is connected with a device negative electrode. The device negative electrode is circular and positioned on a device bottom. A device annular positive electrode is connected on the edge of the device negative electrode and is mutually insulated with the device negative electrode. The metal annular positive electrode structure is formed on an annular or circular chip; recombination of electrons and hole carriers of a luminescent layer (quantum well layer) is enabled to be uniform; the recombination rate is effectively increased, and the response time of the visible light LED device is shortened; the visible light annular LED device can be made into a power type device of 1W; and the visible light communication LED device is suitable for being applied to the application field of LED lamps.