Current type CdZnTe detector with strip-shaped electrode structure and preparation method of current type CdZnTe detector

A strip-shaped electrode and current-type technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of slow response speed and low response amplitude of pulsed X-rays, and achieve carrier drift and recombination speed acceleration, response The effect of large amplitude and large sensitive volume

Inactive Publication Date: 2021-07-13
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems that the existing CdZnTe detectors have slow response speed and low response amplitude to pulsed X-rays, and provide a current-type CdZnTe detector with a strip electrode structure and its preparation method

Method used

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  • Current type CdZnTe detector with strip-shaped electrode structure and preparation method of current type CdZnTe detector
  • Current type CdZnTe detector with strip-shaped electrode structure and preparation method of current type CdZnTe detector
  • Current type CdZnTe detector with strip-shaped electrode structure and preparation method of current type CdZnTe detector

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preparation example Construction

[0053] A kind of preparation method of the current type CdZnTe detector of above-mentioned strip electrode structure: comprise the following steps:

[0054] 1) modeling

[0055] Using the finite element software COMSOL to build a model, design amperometric CdZnTe detectors with different electrode sizes;

[0056] 2) Field analysis and size determination

[0057] 2.1) Establish an electrostatic physical field for the current-type CdZnTe detector models with different electrode sizes constructed in step 1), and adopt free tetrahedral grid division, and some grid unit sizes are calibrated as semiconductor conventional divisions;

[0058] 2.2) Carry out model calculation to the internal electric field distribution and electric field strength of different electrode size current-type CdZnTe detector models, analyze the distribution of each detector's internal weight potential field; select a detector model that meets the requirements, and determine the size; figure 1 As shown, the...

Embodiment 1

[0060] After the previous steps, determine the following dimensions:

[0061] CdZnTe crystal size is 10×10×2mm 3 , the strip electrode size is 2×9mm 2 , the size of the plane electrode on the other side is 9×9mm 2

[0062] 3) Pretreatment

[0063] 3.1) Cut the CdZnTe crystal into a size of 10×10×2mm 3 Wafers, and screen out the Te inclusion phase size is less than 10μm, the density is less than 10 4 / cm 2 , and uniformly distributed wafers;

[0064] 3.2) Mechanically polish the wafer obtained in step 3.1, and throw it until there is no scratch under a 100-fold optical microscope;

[0065] 3.3) Eliminate the stress damage layer on the wafer surface after mechanical polishing in step 3.2) by chemical etching, specifically:

[0066] Bromomethanol solution with a volume fraction of 2% was used as the chemical etching solution. Firstly, the wafer was cleaned in the methanol solution, and then the wafer was clamped with tweezers and immersed in the bromomethanol solution and...

Embodiment 2

[0079] After the previous steps, determine the following dimensions:

[0080] CdZnTe crystal size is 10×10×2mm 3 , the strip electrode size is 1×9mm 2 , the size of the plane electrode on the other side is 9×9mm 2

[0081] 3) Pretreatment

[0082] 3.1) Cut the CdZnTe crystal into a size of 10×10×2mm 3 Wafers, and screen out the Te inclusion phase size is less than 10μm, the density is less than 10 4 / cm 2 , and uniformly distributed wafers;

[0083] 3.2) Mechanically polish the wafer obtained in step 3.1, and throw it until there is no scratch under a 100-fold optical microscope;

[0084] 3.3) Eliminate the stress damage layer on the wafer surface after mechanical polishing in step 3.2) by chemical etching, specifically:

[0085] Using bromomethanol solution with a volume fraction of 2% as the chemical etching solution, first clean the wafer in methanol solution, then clamp the wafer with tweezers and immerse it in bromomethanol solution and move it up and down for 70s...

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Abstract

The invention provides a current type CdZnTe detector with a strip-shaped electrode structure and a preparation method of the current type CdZnTe detector, and solves the problems of low response speed and low response amplitude of an existing CdZnTe detector to pulse X rays. The current type CdZnTe detector takes a CdZnTe crystal as a substrate, two surfaces of the substrate are respectively provided with a strip-shaped electrode and a planar electrode, and the exposed surfaces of the substrate are subjected to oxidation treatment; and the strip-shaped electrode and the planar electrode are in ohmic contact with the CdZnTe crystal.

Description

technical field [0001] The invention belongs to the technical field of pulsed radiation detection, and in particular relates to a current type CdZnTe detector with a strip electrode structure and a preparation method thereof. Background technique [0002] With the development of nuclear science and technology, high-current transient pulsed radiation field has become a new research hotspot, and people try to use current-mode semiconductor detectors to obtain relevant information such as pulse shape and radiation intensity. CdZnTe is a relatively excellent room-temperature semiconductor detector, which has high energy resolution and detection efficiency for X / γ-rays with energy between 10keV-1MeV, which provides a basis for obtaining good pulsed nuclear radiation field information. Therefore, in recent years CdZnTe current-mode semiconductor detectors have a good development. [0003] For pulsed X-ray detection, the literature "Chen Xiang, Han Hetong, Li Gang, etc., exponenti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/117H01L31/0296H01L31/18
CPCH01L31/117H01L31/02966H01L31/1832Y02P70/50
Inventor 徐亚东杨皓王子健张鑫孙晗
Owner NORTHWESTERN POLYTECHNICAL UNIV
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